JPS58135628A - 化合物半導体薄膜構造体の製造方法 - Google Patents

化合物半導体薄膜構造体の製造方法

Info

Publication number
JPS58135628A
JPS58135628A JP57018374A JP1837482A JPS58135628A JP S58135628 A JPS58135628 A JP S58135628A JP 57018374 A JP57018374 A JP 57018374A JP 1837482 A JP1837482 A JP 1837482A JP S58135628 A JPS58135628 A JP S58135628A
Authority
JP
Japan
Prior art keywords
thin film
substrate
compound semiconductor
glass
semiconductor thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57018374A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0419699B2 (cg-RX-API-DMAC10.html
Inventor
Keiji Kuboyama
久保山　啓治
Takeki Matsui
雄毅 松居
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Asahi Kasei Corp
Asahi Chemical Industry Co Ltd
Original Assignee
Asahi Chemical Industry Co Ltd
Asahi Kasei Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Chemical Industry Co Ltd, Asahi Kasei Kogyo KK filed Critical Asahi Chemical Industry Co Ltd
Priority to JP57018374A priority Critical patent/JPS58135628A/ja
Publication of JPS58135628A publication Critical patent/JPS58135628A/ja
Publication of JPH0419699B2 publication Critical patent/JPH0419699B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P90/1914—

Landscapes

  • Formation Of Insulating Films (AREA)
  • Hall/Mr Elements (AREA)
  • Recrystallisation Techniques (AREA)
JP57018374A 1982-02-08 1982-02-08 化合物半導体薄膜構造体の製造方法 Granted JPS58135628A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57018374A JPS58135628A (ja) 1982-02-08 1982-02-08 化合物半導体薄膜構造体の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57018374A JPS58135628A (ja) 1982-02-08 1982-02-08 化合物半導体薄膜構造体の製造方法

Publications (2)

Publication Number Publication Date
JPS58135628A true JPS58135628A (ja) 1983-08-12
JPH0419699B2 JPH0419699B2 (cg-RX-API-DMAC10.html) 1992-03-31

Family

ID=11969931

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57018374A Granted JPS58135628A (ja) 1982-02-08 1982-02-08 化合物半導体薄膜構造体の製造方法

Country Status (1)

Country Link
JP (1) JPS58135628A (cg-RX-API-DMAC10.html)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0371862A3 (en) * 1988-11-29 1990-11-22 The University Of North Carolina At Chapel Hill Method of forming a nonsilicon semiconductor on insulator structure
JP2009533845A (ja) * 2006-04-07 2009-09-17 バルサチリス・エルエルシー 結晶ドナーからへき開されたドニー層を使用して厚膜および薄膜デバイスを製造するシステムおよび方法
JP2009224769A (ja) * 2008-02-18 2009-10-01 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
CN112687799A (zh) * 2020-12-19 2021-04-20 复旦大学 一种高结晶度半导体膜转移制造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4894368A (cg-RX-API-DMAC10.html) * 1972-03-13 1973-12-05

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4894368A (cg-RX-API-DMAC10.html) * 1972-03-13 1973-12-05

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0371862A3 (en) * 1988-11-29 1990-11-22 The University Of North Carolina At Chapel Hill Method of forming a nonsilicon semiconductor on insulator structure
JP2009533845A (ja) * 2006-04-07 2009-09-17 バルサチリス・エルエルシー 結晶ドナーからへき開されたドニー層を使用して厚膜および薄膜デバイスを製造するシステムおよび方法
JP2009224769A (ja) * 2008-02-18 2009-10-01 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
CN112687799A (zh) * 2020-12-19 2021-04-20 复旦大学 一种高结晶度半导体膜转移制造方法
CN112687799B (zh) * 2020-12-19 2022-10-11 复旦大学 一种高结晶度半导体膜转移制造方法

Also Published As

Publication number Publication date
JPH0419699B2 (cg-RX-API-DMAC10.html) 1992-03-31

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