JPS58132973A - 絶縁ゲイト型電界効果半導体装置およびその作製方法 - Google Patents

絶縁ゲイト型電界効果半導体装置およびその作製方法

Info

Publication number
JPS58132973A
JPS58132973A JP57014583A JP1458382A JPS58132973A JP S58132973 A JPS58132973 A JP S58132973A JP 57014583 A JP57014583 A JP 57014583A JP 1458382 A JP1458382 A JP 1458382A JP S58132973 A JPS58132973 A JP S58132973A
Authority
JP
Japan
Prior art keywords
semiconductor
single crystal
gate
field effect
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57014583A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0526351B2 (enrdf_load_stackoverflow
Inventor
Shunpei Yamazaki
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP57014583A priority Critical patent/JPS58132973A/ja
Publication of JPS58132973A publication Critical patent/JPS58132973A/ja
Publication of JPH0526351B2 publication Critical patent/JPH0526351B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6728—Vertical TFTs

Landscapes

  • Bipolar Transistors (AREA)
JP57014583A 1982-02-01 1982-02-01 絶縁ゲイト型電界効果半導体装置およびその作製方法 Granted JPS58132973A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57014583A JPS58132973A (ja) 1982-02-01 1982-02-01 絶縁ゲイト型電界効果半導体装置およびその作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57014583A JPS58132973A (ja) 1982-02-01 1982-02-01 絶縁ゲイト型電界効果半導体装置およびその作製方法

Publications (2)

Publication Number Publication Date
JPS58132973A true JPS58132973A (ja) 1983-08-08
JPH0526351B2 JPH0526351B2 (enrdf_load_stackoverflow) 1993-04-15

Family

ID=11865181

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57014583A Granted JPS58132973A (ja) 1982-02-01 1982-02-01 絶縁ゲイト型電界効果半導体装置およびその作製方法

Country Status (1)

Country Link
JP (1) JPS58132973A (enrdf_load_stackoverflow)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5714584A (en) * 1980-06-28 1982-01-25 Chisso Corp Compound having tetrazine skeleton

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5714584A (en) * 1980-06-28 1982-01-25 Chisso Corp Compound having tetrazine skeleton

Also Published As

Publication number Publication date
JPH0526351B2 (enrdf_load_stackoverflow) 1993-04-15

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