JPS58132754A - アモルフアス・シリコン感光体製造方法及びその製造装置 - Google Patents
アモルフアス・シリコン感光体製造方法及びその製造装置Info
- Publication number
- JPS58132754A JPS58132754A JP57015870A JP1587082A JPS58132754A JP S58132754 A JPS58132754 A JP S58132754A JP 57015870 A JP57015870 A JP 57015870A JP 1587082 A JP1587082 A JP 1587082A JP S58132754 A JPS58132754 A JP S58132754A
- Authority
- JP
- Japan
- Prior art keywords
- amorphous silicon
- path
- silicon photoreceptor
- substrate
- film forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 108091008695 photoreceptors Proteins 0.000 title claims description 42
- 238000004519 manufacturing process Methods 0.000 title claims description 39
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims description 32
- 238000000034 method Methods 0.000 title claims description 15
- 239000000758 substrate Substances 0.000 claims abstract description 59
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 17
- 239000007789 gas Substances 0.000 claims description 68
- 230000007246 mechanism Effects 0.000 claims description 43
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims 1
- 230000002040 relaxant effect Effects 0.000 claims 1
- 238000007599 discharging Methods 0.000 abstract 2
- 230000005611 electricity Effects 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 52
- 238000009792 diffusion process Methods 0.000 description 10
- 238000004891 communication Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000002485 combustion reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 210000002816 gill Anatomy 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 210000000554 iris Anatomy 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 210000003462 vein Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Photoreceptors In Electrophotography (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57015870A JPS58132754A (ja) | 1982-02-03 | 1982-02-03 | アモルフアス・シリコン感光体製造方法及びその製造装置 |
| US06/457,231 US4501766A (en) | 1982-02-03 | 1983-01-11 | Film depositing apparatus and a film depositing method |
| GB08300948A GB2114160B (en) | 1982-02-03 | 1983-01-14 | Film depositing apparatus and method |
| DE3303435A DE3303435C2 (de) | 1982-02-03 | 1983-02-02 | Vorrichtung zur Abscheidung einer Schicht aus amorphem Silizium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57015870A JPS58132754A (ja) | 1982-02-03 | 1982-02-03 | アモルフアス・シリコン感光体製造方法及びその製造装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58132754A true JPS58132754A (ja) | 1983-08-08 |
| JPH03625B2 JPH03625B2 (enrdf_load_stackoverflow) | 1991-01-08 |
Family
ID=11900826
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57015870A Granted JPS58132754A (ja) | 1982-02-03 | 1982-02-03 | アモルフアス・シリコン感光体製造方法及びその製造装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58132754A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59131510A (ja) * | 1983-01-17 | 1984-07-28 | Zenko Hirose | アモルフアスシリコン膜の成膜方法 |
| JPS60186849A (ja) * | 1984-02-14 | 1985-09-24 | エナージー・コンバーション・デバイセス・インコーポレーテッド | 堆積膜形成方法および装置 |
| JPS60204882A (ja) * | 1984-03-28 | 1985-10-16 | Anelva Corp | 放電反応処理装置 |
-
1982
- 1982-02-03 JP JP57015870A patent/JPS58132754A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59131510A (ja) * | 1983-01-17 | 1984-07-28 | Zenko Hirose | アモルフアスシリコン膜の成膜方法 |
| JPS60186849A (ja) * | 1984-02-14 | 1985-09-24 | エナージー・コンバーション・デバイセス・インコーポレーテッド | 堆積膜形成方法および装置 |
| JPS60204882A (ja) * | 1984-03-28 | 1985-10-16 | Anelva Corp | 放電反応処理装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03625B2 (enrdf_load_stackoverflow) | 1991-01-08 |
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