JPS58131786A - 半導体レ−ザ - Google Patents

半導体レ−ザ

Info

Publication number
JPS58131786A
JPS58131786A JP1345382A JP1345382A JPS58131786A JP S58131786 A JPS58131786 A JP S58131786A JP 1345382 A JP1345382 A JP 1345382A JP 1345382 A JP1345382 A JP 1345382A JP S58131786 A JPS58131786 A JP S58131786A
Authority
JP
Japan
Prior art keywords
layer
mesa stripe
semiconductor laser
active layer
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1345382A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0136276B2 (enrdf_load_stackoverflow
Inventor
Mitsuhiro Kitamura
北村　光弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Nippon Telegraph and Telephone Corp
Original Assignee
NEC Corp
Nippon Telegraph and Telephone Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Telegraph and Telephone Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1345382A priority Critical patent/JPS58131786A/ja
Publication of JPS58131786A publication Critical patent/JPS58131786A/ja
Publication of JPH0136276B2 publication Critical patent/JPH0136276B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer

Landscapes

  • Semiconductor Lasers (AREA)
JP1345382A 1982-01-29 1982-01-29 半導体レ−ザ Granted JPS58131786A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1345382A JPS58131786A (ja) 1982-01-29 1982-01-29 半導体レ−ザ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1345382A JPS58131786A (ja) 1982-01-29 1982-01-29 半導体レ−ザ

Publications (2)

Publication Number Publication Date
JPS58131786A true JPS58131786A (ja) 1983-08-05
JPH0136276B2 JPH0136276B2 (enrdf_load_stackoverflow) 1989-07-31

Family

ID=11833557

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1345382A Granted JPS58131786A (ja) 1982-01-29 1982-01-29 半導体レ−ザ

Country Status (1)

Country Link
JP (1) JPS58131786A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61154190A (ja) * 1984-12-27 1986-07-12 Mitsubishi Electric Corp 半導体レ−ザ
US4937836A (en) * 1983-11-30 1990-06-26 Sharp Kabushiki Kaisha Semiconductor laser device and production method therefor
US8863324B2 (en) 2008-03-31 2014-10-21 Kohler Co. Bathtub rim assembly

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4937836A (en) * 1983-11-30 1990-06-26 Sharp Kabushiki Kaisha Semiconductor laser device and production method therefor
JPS61154190A (ja) * 1984-12-27 1986-07-12 Mitsubishi Electric Corp 半導体レ−ザ
US8863324B2 (en) 2008-03-31 2014-10-21 Kohler Co. Bathtub rim assembly

Also Published As

Publication number Publication date
JPH0136276B2 (enrdf_load_stackoverflow) 1989-07-31

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