JPS58131786A - 半導体レ−ザ - Google Patents
半導体レ−ザInfo
- Publication number
- JPS58131786A JPS58131786A JP1345382A JP1345382A JPS58131786A JP S58131786 A JPS58131786 A JP S58131786A JP 1345382 A JP1345382 A JP 1345382A JP 1345382 A JP1345382 A JP 1345382A JP S58131786 A JPS58131786 A JP S58131786A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- mesa stripe
- semiconductor laser
- active layer
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
- H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2237—Buried stripe structure with a non-planar active layer
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1345382A JPS58131786A (ja) | 1982-01-29 | 1982-01-29 | 半導体レ−ザ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1345382A JPS58131786A (ja) | 1982-01-29 | 1982-01-29 | 半導体レ−ザ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58131786A true JPS58131786A (ja) | 1983-08-05 |
| JPH0136276B2 JPH0136276B2 (cg-RX-API-DMAC10.html) | 1989-07-31 |
Family
ID=11833557
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1345382A Granted JPS58131786A (ja) | 1982-01-29 | 1982-01-29 | 半導体レ−ザ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58131786A (cg-RX-API-DMAC10.html) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61154190A (ja) * | 1984-12-27 | 1986-07-12 | Mitsubishi Electric Corp | 半導体レ−ザ |
| US4937836A (en) * | 1983-11-30 | 1990-06-26 | Sharp Kabushiki Kaisha | Semiconductor laser device and production method therefor |
| US8863324B2 (en) | 2008-03-31 | 2014-10-21 | Kohler Co. | Bathtub rim assembly |
-
1982
- 1982-01-29 JP JP1345382A patent/JPS58131786A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4937836A (en) * | 1983-11-30 | 1990-06-26 | Sharp Kabushiki Kaisha | Semiconductor laser device and production method therefor |
| JPS61154190A (ja) * | 1984-12-27 | 1986-07-12 | Mitsubishi Electric Corp | 半導体レ−ザ |
| US8863324B2 (en) | 2008-03-31 | 2014-10-21 | Kohler Co. | Bathtub rim assembly |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0136276B2 (cg-RX-API-DMAC10.html) | 1989-07-31 |
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