JPS58131748A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS58131748A
JPS58131748A JP57013004A JP1300482A JPS58131748A JP S58131748 A JPS58131748 A JP S58131748A JP 57013004 A JP57013004 A JP 57013004A JP 1300482 A JP1300482 A JP 1300482A JP S58131748 A JPS58131748 A JP S58131748A
Authority
JP
Japan
Prior art keywords
region
substrate
layer
ion
implanted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57013004A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0249019B2 (enExample
Inventor
Junji Sakurai
桜井　潤治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57013004A priority Critical patent/JPS58131748A/ja
Publication of JPS58131748A publication Critical patent/JPS58131748A/ja
Publication of JPH0249019B2 publication Critical patent/JPH0249019B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W10/011—
    • H10W10/10—

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
JP57013004A 1982-01-29 1982-01-29 半導体装置の製造方法 Granted JPS58131748A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57013004A JPS58131748A (ja) 1982-01-29 1982-01-29 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57013004A JPS58131748A (ja) 1982-01-29 1982-01-29 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58131748A true JPS58131748A (ja) 1983-08-05
JPH0249019B2 JPH0249019B2 (enExample) 1990-10-26

Family

ID=11821026

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57013004A Granted JPS58131748A (ja) 1982-01-29 1982-01-29 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58131748A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5010034A (en) * 1989-03-07 1991-04-23 National Semiconductor Corporation CMOS and bipolar fabrication process using selective epitaxial growth scalable to below 0.5 micron
EP0933801A1 (fr) * 1998-01-30 1999-08-04 STMicroelectronics S.A. Procédé de dépÔt d'une région de silicium monocristallin
US6143073A (en) * 1998-11-19 2000-11-07 Heraeus Shin-Etsu America Methods and apparatus for minimizing white point defects in quartz glass crucibles
US6461946B2 (en) 2000-05-01 2002-10-08 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5010034A (en) * 1989-03-07 1991-04-23 National Semiconductor Corporation CMOS and bipolar fabrication process using selective epitaxial growth scalable to below 0.5 micron
EP0933801A1 (fr) * 1998-01-30 1999-08-04 STMicroelectronics S.A. Procédé de dépÔt d'une région de silicium monocristallin
FR2774509A1 (fr) * 1998-01-30 1999-08-06 Sgs Thomson Microelectronics Procede de depot d'une region de silicium monocristallin
JPH11274171A (ja) * 1998-01-30 1999-10-08 St Microelectronics Sa 単結晶シリコン領域の堆積法
US6165265A (en) * 1998-01-30 2000-12-26 Stmicroelectronics S.A. Method of deposition of a single-crystal silicon region
US6143073A (en) * 1998-11-19 2000-11-07 Heraeus Shin-Etsu America Methods and apparatus for minimizing white point defects in quartz glass crucibles
US6461946B2 (en) 2000-05-01 2002-10-08 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing semiconductor device

Also Published As

Publication number Publication date
JPH0249019B2 (enExample) 1990-10-26

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