JPS58131735A - タンタルオキサイド膜の製造法 - Google Patents
タンタルオキサイド膜の製造法Info
- Publication number
- JPS58131735A JPS58131735A JP57013005A JP1300582A JPS58131735A JP S58131735 A JPS58131735 A JP S58131735A JP 57013005 A JP57013005 A JP 57013005A JP 1300582 A JP1300582 A JP 1300582A JP S58131735 A JPS58131735 A JP S58131735A
- Authority
- JP
- Japan
- Prior art keywords
- film
- tantalum
- oxide film
- irradiated
- tantalum oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02244—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of a metallic layer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57013005A JPS58131735A (ja) | 1982-01-29 | 1982-01-29 | タンタルオキサイド膜の製造法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57013005A JPS58131735A (ja) | 1982-01-29 | 1982-01-29 | タンタルオキサイド膜の製造法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58131735A true JPS58131735A (ja) | 1983-08-05 |
| JPS6364895B2 JPS6364895B2 (enrdf_load_stackoverflow) | 1988-12-14 |
Family
ID=11821057
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57013005A Granted JPS58131735A (ja) | 1982-01-29 | 1982-01-29 | タンタルオキサイド膜の製造法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58131735A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0246756A (ja) * | 1988-08-08 | 1990-02-16 | Mitsubishi Electric Corp | 半導体容量素子の製造方法 |
| JPH06244364A (ja) * | 1993-02-17 | 1994-09-02 | Nec Corp | 半導体装置の製造方法 |
| KR20020058427A (ko) * | 2000-12-30 | 2002-07-12 | 박종섭 | 커패시터의 제조방법 |
-
1982
- 1982-01-29 JP JP57013005A patent/JPS58131735A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0246756A (ja) * | 1988-08-08 | 1990-02-16 | Mitsubishi Electric Corp | 半導体容量素子の製造方法 |
| JPH06244364A (ja) * | 1993-02-17 | 1994-09-02 | Nec Corp | 半導体装置の製造方法 |
| KR20020058427A (ko) * | 2000-12-30 | 2002-07-12 | 박종섭 | 커패시터의 제조방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6364895B2 (enrdf_load_stackoverflow) | 1988-12-14 |
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