JPS58125665A - Manufacture of high-dielectric constant porcelain dielectric - Google Patents

Manufacture of high-dielectric constant porcelain dielectric

Info

Publication number
JPS58125665A
JPS58125665A JP57008101A JP810182A JPS58125665A JP S58125665 A JPS58125665 A JP S58125665A JP 57008101 A JP57008101 A JP 57008101A JP 810182 A JP810182 A JP 810182A JP S58125665 A JPS58125665 A JP S58125665A
Authority
JP
Japan
Prior art keywords
temperature
weight
dielectric constant
dielectric
batio3
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57008101A
Other languages
Japanese (ja)
Inventor
飯野 猛
黒田 孝之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP57008101A priority Critical patent/JPS58125665A/en
Publication of JPS58125665A publication Critical patent/JPS58125665A/en
Pending legal-status Critical Current

Links

Landscapes

  • Compositions Of Oxide Ceramics (AREA)
  • Inorganic Insulating Materials (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 本発明は高い誘電率を有し、温度に対する誘電率の変化
が小さく、かつ交流電圧特性の良好な高誘電率磁器誘電
体の製造方法を提供するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention provides a method for manufacturing a high-permittivity ceramic dielectric material having a high dielectric constant, a small change in dielectric constant with respect to temperature, and good AC voltage characteristics.

従来、高誘電率をもった磁器誘電体としては、チタン酸
バリウムを主成分とした磁器が用いらI″lているが、
誘電率が高くなるほど誘電率の温度変化が大きくなり、
誘電率が4000(25°Cにおいて)以上になると変
化率が60係以上(25°C〜85°Cにおいて)とな
るものであった。また、温度変化が比較的小さ々もので
は、誘電率が1600以下になるため容量が十分にとれ
ないものであった。
Conventionally, porcelain containing barium titanate as a main component has been used as a porcelain dielectric material with a high dielectric constant.
The higher the dielectric constant, the greater the change in dielectric constant with temperature.
When the dielectric constant was 4000 or more (at 25°C), the rate of change was a factor of 60 or more (at 25°C to 85°C). Furthermore, if the temperature change is relatively small, the dielectric constant will be less than 1600, making it impossible to obtain a sufficient capacity.

本発明者らは既に特願昭56−127627号において
、BaT10.−C2LT103−Nb205−C02
03(MnO2) −(Cub)成分系の高誘電率磁器
誘電体組成物を提案し、これにより誘電率が高く、広い
温度範囲に亘って誘電率の温度変化率が小さく、交流電
圧特性の良好な特性が得られることを明らかにした。
The present inventors have already reported BaT10. -C2LT103-Nb205-C02
We proposed a high permittivity ceramic dielectric composition based on the 03 (MnO2) - (Cub) component system, which has a high permittivity, a small temperature change rate of permittivity over a wide temperature range, and good AC voltage characteristics. It was revealed that the following characteristics can be obtained.

すなわち、チタン酸バリウム(BaTi03)87.6
〜96.1重量係、チタン酸カルンウム(CaTi03
)1.6〜9.7重景係、五酸化ニオブ(Nb20s)
1.9〜3.7重敗係で示される固溶体を基本絹成七し
、こねに副成分として主成分に対17て酸化コバルト(
G(ho3)−二酸化マンガン(MnO2)の内の少な
くとも1種を合計量で0.3〜0.5重清%、酸化銅(
CuO)を○〜0.6重量係添加含有してなる高誘電率
磁器誘電体組成物である。
That is, barium titanate (BaTi03) 87.6
~96.1 weight, carunium titanate (CaTi03
) 1.6-9.7 Heavy-duty Section, Niobium Pentoxide (Nb20s)
The solid solution shown by the ratio of 1.9 to 3.7 is made into basic silk, and cobalt oxide (cobalt oxide (17%) is added to the main component as a subcomponent in kneading.
At least one of G(ho3)-manganese dioxide (MnO2) is added in a total amount of 0.3 to 0.5%, copper oxide (
This is a high permittivity ceramic dielectric composition containing CuO) added in a weight ratio of 0 to 0.6.

ここで、BaTiO3、CaTiO3、Nb2O5、C
O203゜CuOのそれぞれの成分範囲を限定したのは
、次の通りである。捷ず、CaTiO3が1.6重量部
未満では交流電圧特性を改善する効果が弱く、甘た、C
aTi0 、が97重量%を超えた場合には室温におけ
る誘電率が低下し、高温(125°C+1近)における
誘電率も低下し、誘電率の温度特性が悪くなる。そして
、Nb2O5が1.9重量部未満では交流電圧特性が悪
くなり、Nb2O5が3.7重t%を超えた場合には室
温における誘電率が低下する。また、BaTiO31i
 CaTiOs トNb205K ヨP) ’c (D
範f!4hM定められる。さらに、CO2O3が0.3
重量部未満では誘電率が低温側(−66℃付近)で大き
く、高温側(126°C付近)で低下し、誘電率の温度
特性が悪くなる。CO203が0.5事情%を超えた場
合には交流電圧特性が悪くなる。捷だ、CuOの添加に
」=す誘電率は少し低下するが、交流電圧特性の改善お
よび高温側(125°C刊近)での誘電率の改善効果が
ある。そして、GuOが0.5重叶係を超えた場合には
誘電率の低下が著しい。寸だ、MnO2はCO2O3と
同様の効果がある。
Here, BaTiO3, CaTiO3, Nb2O5, C
The range of each component of O203°CuO was limited as follows. If CaTiO3 is less than 1.6 parts by weight, the effect of improving AC voltage characteristics is weak, and the C
When aTi0 exceeds 97% by weight, the dielectric constant at room temperature decreases, the dielectric constant at high temperature (near 125° C.+1) also decreases, and the temperature characteristics of the dielectric constant deteriorate. If Nb2O5 is less than 1.9 parts by weight, the AC voltage characteristics deteriorate, and if Nb2O5 exceeds 3.7 parts by weight, the dielectric constant at room temperature decreases. Also, BaTiO31i
CaTiOs トNb205K YOP) 'c (D
Range f! 4hM is determined. Furthermore, CO2O3 is 0.3
If the amount is less than 1 part by weight, the dielectric constant is large on the low temperature side (around -66°C) and decreases on the high temperature side (around 126°C), resulting in poor temperature characteristics of the dielectric constant. When CO203 exceeds 0.5%, AC voltage characteristics deteriorate. However, the addition of CuO causes a slight decrease in the dielectric constant, but has the effect of improving AC voltage characteristics and improving the dielectric constant at high temperatures (125° C.). When GuO exceeds 0.5 fold ratio, the dielectric constant decreases significantly. Indeed, MnO2 has the same effect as CO2O3.

すなわち、先願発明ンユー1−記組成範囲内のBaTi
O3−CaTi03−Nb2o5−CO203(Mn0
2)=(Cuo)成分系によって初めて誘電率が高く、
広い温度範囲に亘って容量温度変化率が小さく、交流電
圧特性の良好な特性を得るものである。しかし、これで
もまだ交流電圧特性が十分ではなかった。す々わち、積
層コンデンサ等のように一層の磁器の厚みが数1opm
と薄くなると、磁器に加わる電界が大きくなるため、交
流電圧の印加電圧が増しても誘電率や誘電損失(ta、
nδ)が大きくならないように、」:す交流電圧特性の
良い磁器誘電体が望寸れる4、 本発明者らは、BaTiO3−CaTi03− Nb2
05−CO203Nb205−C0203(組成系にお
いて、主成分であるBaTiO3を、BaCO3とTl
O2とから生成するときの生成温度を適当に選ぶことに
より、」−記成分系高誘電率磁器誘電体の交流電圧特性
を大きく改善できることを見出しだが、上記生成温度の
変動により磁器誘電体の特性の変動が太きく、製造上の
問題が残るものであった。
That is, BaTi within the composition range described in 1.
O3-CaTi03-Nb2o5-CO203(Mn0
2)=The dielectric constant is high for the first time due to the (Cuo) component system,
The capacitance temperature change rate is small over a wide temperature range, and good AC voltage characteristics are obtained. However, even with this, the AC voltage characteristics were still insufficient. In other words, the thickness of one layer of porcelain is several 1 opm, such as in multilayer capacitors.
As it becomes thinner, the electric field applied to the porcelain increases, so even if the applied AC voltage increases, the dielectric constant and dielectric loss (ta,
In order to prevent nδ) from becoming large, a porcelain dielectric with good AC voltage characteristics is desired4.
05-CO203Nb205-C0203 (In the composition system, the main component BaTiO3 is replaced with BaCO3 and Tl
It was discovered that by appropriately selecting the generation temperature when generating from O2, the AC voltage characteristics of the high permittivity porcelain dielectric material based on the above-mentioned components could be greatly improved. The fluctuation was large, and manufacturing problems remained.

本発明は、上記BaTiO3の生成温度の変動による磁
器誘電体の特性の変動を、Nb2O5のlの増減により
補正し、磁器誘電体の特性を安定させようとするもので
ある。
The present invention aims to stabilize the characteristics of the ceramic dielectric by correcting the fluctuations in the characteristics of the ceramic dielectric due to the fluctuations in the BaTiO3 formation temperature by increasing or decreasing l of Nb2O5.

以下、具体的な実施例に基いて本発明の詳細な説明する
Hereinafter, the present invention will be described in detail based on specific examples.

まず、出発原料として純度99.8%以上の高純度のB
aC03とTiO2とを等モルづつ配合し、ボールミル
で混合し、乾燥後、所定の温度で2時間粉体板焼し、B
aTiOx  を生成した。このときのBaTi03の
生成温度は電気炉の設定温度では々く、白金−ロジウム
熱電対により試料の温度を数箇所測定した〜Y均値であ
る。次に、上記BaTiO3とCaTiO3,Nb2O
5をそれぞれ94.4重量% 、 2.8重量% 、 
2.8重量部と、これら主成分に対してCO203を0
.46重量% 、 cuoを0.2重量%添加配合し、
ボールミルで混合し乾燥後、5重量部のPVA(ポリビ
ニルアルコール)水溶液を9重量部添加して造粒し、直
径1.3m7ffi、厚さ約0.3mmの円板に11℃
m/c?rの圧力で成形し、これを1340”Cで2時
間焼成した。このようにして得られた素子に銀電極を焼
付けて付与し、その1日後に25℃における静電容量と
誘電損失を測定し、静電容量から誘電率を求めた。また
、誘電率の温度変化率や交流電圧特性を求めた。その測
定結果を下記の表に示す。
First, high-purity B with a purity of 99.8% or more is used as a starting material.
Equal moles of aC03 and TiO2 were blended, mixed in a ball mill, dried, and baked on a powder board at a predetermined temperature for 2 hours.
aTiOx was produced. The generation temperature of BaTi03 at this time was very high at the set temperature of the electric furnace, and the temperature of the sample was measured at several points with a platinum-rhodium thermocouple. Next, the above BaTiO3, CaTiO3, Nb2O
5, 94.4% by weight, 2.8% by weight, respectively.
2.8 parts by weight and 0 CO203 for these main components.
.. 46% by weight, 0.2% by weight of cuo added,
After mixing in a ball mill and drying, 9 parts by weight of 5 parts by weight of PVA (polyvinyl alcohol) aqueous solution was added and granulated, and the mixture was molded into a disk with a diameter of 1.3m7ffi and a thickness of about 0.3mm at 11°C.
m/c? The resulting device was molded at a pressure of Then, the dielectric constant was determined from the capacitance. Also, the temperature change rate of the dielectric constant and AC voltage characteristics were determined. The measurement results are shown in the table below.

(以下余白) この場合、BaTiOxの目標とする生成温度は114
00C(実際には1110〜11600Cで実施可能で
あることを確認)であり、−4二記生成温度が1100
℃お」=び1170’Cとずれた場合の誘電体の誘電率
、誘電損失、誘電率の温度変化率(−66〜+126°
C525°C基準)、交流電圧特性(tanδ、atl
に1]z、50v汐m)を上記表中のそれぞれ試料m1
.m4に示している。このようにBaTj−03の生成
温度が目標値よりずれると、誘電体の緒特性が変動し、
製造上問題である。そこで、BaTi03の生成温度が
1100℃と低すぎた場合、配合時にNb2O5を正規
の配合量より17%少々くしだ場合、およびBaTiO
3の生成温度が1170°Cと高すぎた場合、配合時に
Nb2O5を正規の配合量より26係多くした場合の結
果をそれぞれ−J二記表中の試料No、2.No、5に
示している。このとき、それぞれit特性が試料No、
3で示すBaTiO3の生成温度が1140℃の場合の
特性に近くなっている。
(Left below) In this case, the target formation temperature of BaTiOx is 114
00C (confirmed that it can actually be carried out at 1110 to 11600C), and the -4 diode generation temperature is 1100C.
The dielectric constant, dielectric loss, and temperature change rate of dielectric constant (-66 to +126°
C525°C standard), AC voltage characteristics (tan δ, atl
1]z, 50vshio m) for each sample m1 in the above table.
.. It is shown in m4. In this way, when the formation temperature of BaTj-03 deviates from the target value, the dielectric characteristics change,
This is a manufacturing problem. Therefore, if the formation temperature of BaTi03 is too low at 1100°C, if Nb2O5 is added a little more than 17% from the normal amount during compounding, and if BaTiO3 is
When the formation temperature of No. 3 was too high at 1170°C, the results when Nb2O5 was added 26 times more than the normal amount during compounding are shown in Sample No. 2 and No. 2 in the -J table, respectively. No. 5 is shown. At this time, the it characteristics of sample No.
The characteristics shown in No. 3 are close to those obtained when the BaTiO3 formation temperature is 1140°C.

このようにBaTi03の生成温度が低すぎた場合はN
b2O5の配合量を正規配合量より適当量減らし、逆に
BzTiOsの生成温度が高すぎた場合はNb2O5の
配合量を適当量増やすことにより、BaTiO3生成温
度のずれによる誘電体の特性のずれを補正できる。しか
し、特性のずれを補正するだめのNb2o5の計の増減
により、Nb2O5の配合量が結果的に上述した1、9
〜3.7重量%の範囲を外れると、特性上好ましくない
ことはもちろんである。
In this way, if the formation temperature of BaTi03 is too low, N
By reducing the blending amount of b2O5 by an appropriate amount from the normal blending amount, and conversely, if the BzTiOs formation temperature is too high, by increasing the blending amount of Nb2O5 by an appropriate amount, the deviation in dielectric properties due to the deviation in BaTiO3 formation temperature can be corrected. can. However, due to the increase/decrease in the total amount of Nb2O5 needed to correct the deviation in characteristics, the blended amount of Nb2O5 ended up being as high as 1 or 9 as described above.
Of course, if the content is outside the range of 3.7% by weight, the properties are unfavorable.

本発明の製造方法によれば、BIGO3とTiO2とか
ら所定の生成温度でBaTi03を生成し、このBaT
i03を用いるBaTiO3−CaTiO3−Nb2O
5−CO20v (MnO2) −(Cub)  系高
誘電率磁器誘電体において、BaTiO3の生成温度の
所定の温度からのずれによる特性の変動をNb2O5の
量を増減することで簡単に補正することができ、大量生
産に適しているものである。
According to the production method of the present invention, BaTi03 is produced from BIGO3 and TiO2 at a predetermined production temperature, and this BaT
BaTiO3-CaTiO3-Nb2O using i03
In 5-CO20v (MnO2) -(Cub) based high permittivity ceramic dielectrics, fluctuations in characteristics due to deviations in BaTiO3 formation temperature from a predetermined temperature can be easily corrected by increasing or decreasing the amount of Nb2O5. , which is suitable for mass production.

Claims (1)

【特許請求の範囲】[Claims] 等モル数のBaCO3とTlO2とから所定の生成温度
でBaTiO3を生成し、このBaTi03を用い、B
zTiOx  8了、6〜96.1重量%  、CaT
iO31,5〜9.7重量係、 Nb2O51,9〜3
.7重量係で示される固溶体を基本組成とし、こ11に
副成分として主成分に対してCO20x 、 MnO2
の内の少なくとも1種を合計量で0.3〜0.5重i7
t% 、 cuoをO−0,5重量係添加含有すること
を基本とし、かつ」−記BaTiO3の生成温度の所定
温度からのずれによる特性の変動を一11記Nb2O5
の量を増減することにより補正することを特徴とする高
誘電率磁器誘電体の製造方法。
BaTiO3 is produced from equimolar numbers of BaCO3 and TlO2 at a predetermined production temperature, and using this BaTi03, B
zTiOx 8%, 6-96.1% by weight, CaT
iO31,5~9.7 weight ratio, Nb2O51,9~3
.. 7 The basic composition is a solid solution shown by the weight ratio, and this 11 contains CO20x and MnO2 as subcomponents relative to the main component.
The total amount of at least one of the following is 0.3 to 0.5 weight i7
t%, cuo by weight of O-0.5, and the fluctuation of the characteristics due to the deviation of the formation temperature of BaTiO3 from the predetermined temperature.
1. A method for producing a high permittivity ceramic dielectric material, which comprises making corrections by increasing or decreasing the amount of .
JP57008101A 1982-01-20 1982-01-20 Manufacture of high-dielectric constant porcelain dielectric Pending JPS58125665A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57008101A JPS58125665A (en) 1982-01-20 1982-01-20 Manufacture of high-dielectric constant porcelain dielectric

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57008101A JPS58125665A (en) 1982-01-20 1982-01-20 Manufacture of high-dielectric constant porcelain dielectric

Publications (1)

Publication Number Publication Date
JPS58125665A true JPS58125665A (en) 1983-07-26

Family

ID=11683905

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57008101A Pending JPS58125665A (en) 1982-01-20 1982-01-20 Manufacture of high-dielectric constant porcelain dielectric

Country Status (1)

Country Link
JP (1) JPS58125665A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5592647A (en) * 1991-08-26 1997-01-07 Nippon Tungsten Co., Ltd. PTC panel heater with small rush current characteristic and highly heat insulating region corresponding to heater location to prevent local overheating

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5592647A (en) * 1991-08-26 1997-01-07 Nippon Tungsten Co., Ltd. PTC panel heater with small rush current characteristic and highly heat insulating region corresponding to heater location to prevent local overheating

Similar Documents

Publication Publication Date Title
JP2978580B2 (en) High dielectric constant dielectric porcelain composition
CN108585834A (en) High-dielectric-constant ceramics powder and obtained ceramic capacitor and manufacturing method
JPH05109319A (en) High dielectric constant dielectric porcilain composition
JPH10297967A (en) Dielectric ceramic composition with high dielectric constant and its production
CN102060524A (en) High dielectric constant ceramic powder, ceramic capacitor and manufacture method thereof
JPS58125665A (en) Manufacture of high-dielectric constant porcelain dielectric
JP3095941B2 (en) Dielectric porcelain composition
JPH0118521B2 (en)
KR100415561B1 (en) A Dielectic Composition and a Method of Manufacturing Dielectric Body for Multilayer Ceramic Capacitor Using it
JPH0118522B2 (en)
JPS5815078A (en) High dielectric constant ceramic dielectric composition
JP2789110B2 (en) High dielectric constant porcelain composition
JPS6128209B2 (en)
JPH0316773B2 (en)
JPS6128208B2 (en)
JPS632310A (en) Grain boundary insulating type semiconductor porcelain compound
JPS594803B2 (en) High dielectric constant porcelain
JPS6230483B2 (en)
JPS6032342B2 (en) Ceramic materials for reduction and reoxidation type semiconductor capacitors
JPH02155116A (en) Highly dielectric porcelain composition and its manufacture
JPH0536308A (en) High permittivity dielectric ceramic composition
JPS584448B2 (en) Method for manufacturing reduction and reoxidation type semiconductor ceramic capacitor body
JPH05345663A (en) Semiconductor ceramic and its production
JPS6230482B2 (en)
JPH04363012A (en) Ceramic capacitor