JPS632310A - Grain boundary insulating type semiconductor porcelain compound - Google Patents
Grain boundary insulating type semiconductor porcelain compoundInfo
- Publication number
- JPS632310A JPS632310A JP61144795A JP14479586A JPS632310A JP S632310 A JPS632310 A JP S632310A JP 61144795 A JP61144795 A JP 61144795A JP 14479586 A JP14479586 A JP 14479586A JP S632310 A JPS632310 A JP S632310A
- Authority
- JP
- Japan
- Prior art keywords
- oxide
- grain boundary
- dielectric constant
- mol
- semiconductor ceramic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 20
- 229910052573 porcelain Inorganic materials 0.000 title description 3
- 150000001875 compounds Chemical class 0.000 title 1
- 239000000203 mixture Substances 0.000 claims description 20
- 239000000919 ceramic Substances 0.000 claims description 13
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 claims description 11
- 239000013078 crystal Substances 0.000 claims description 10
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 8
- 239000003795 chemical substances by application Substances 0.000 claims description 6
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910000484 niobium oxide Inorganic materials 0.000 claims description 3
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 3
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 3
- 229910001930 tungsten oxide Inorganic materials 0.000 claims description 3
- 230000007423 decrease Effects 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- 239000005751 Copper oxide Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 229910000431 copper oxide Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 108020004705 Codon Proteins 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 229910003440 dysprosium oxide Inorganic materials 0.000 description 1
- NLQFUUYNQFMIJW-UHFFFAOYSA-N dysprosium(iii) oxide Chemical compound O=[Dy]O[Dy]=O NLQFUUYNQFMIJW-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 230000001932 seasonal effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、高い誘電率を有し、その温度変化率が、小な
るチタン酸ストロンチウムを主成分とする粒界Ｐ３ａ型
半導体磁器組成物に関し、産業上、コンデンサの小型化
、信頼性の向上に寄与するものである。Detailed Description of the Invention (Field of Industrial Application) The present invention relates to a grain boundary P3a type semiconductor ceramic composition which has a high dielectric constant and a small temperature change rate and whose main component is strontium titanate. This contributes to the miniaturization and improvement of reliability of capacitors in industry.
（従来の技術）
粒界絶縁型半導体磁器組成物としては、例えばチタン酸
バリウム（ｍａｒｉｏ、）を主成分とし、これに酸化ジ
スプロシウム（Ｄｙ２０ｓ）等の原子価制御剤とその細
微量の添加剤を配合した半導体Ｏ１器の結晶粒界を酸化
銅（Ｃ−Ｏ）等を熱拡散させて絶縁化したものが知らｎ
ており、この組成物は誘電率が、５ｏｏｏｏ〜ｂｏｏｏ
ｏと大きいが誘電損失（―δ）が、ｓ４前後と太き（、
また誘電率の温度変化が、−、ＵＣ〜＋ｇｊ℃の範囲に
おい℃、±ｌＳ俤を越えている。(Prior art) Grain boundary insulated semiconductor ceramic compositions include, for example, barium titanate (mario) as a main component, and a valence control agent such as dysprosium oxide (Dy20s) and a small amount of additives thereof. It is known that the crystal grain boundaries of a compounded semiconductor O1 device are insulated by thermally diffusing copper oxide (C-O), etc.
The dielectric constant of this composition is 5oooo~booo
Although the dielectric loss (-δ) is large at around s4 (,
Further, the temperature change in dielectric constant exceeds ±lS in the range of -UC to +gj°C.
更に上記の欠点を改善したものとして、近年、チタン酸
ストロンチウム（５ｒＴｉＯｓ ） ｋ主成分とするも
のが数多く報告さｎている。し１１えば、特公昭６０−
φｔ、ｇｔｔ 号公報ＩＣはチタン酸ストロンチウ
ム デク、７〜９９．ｇ！Ｔ 重量係 （タフ、ダ７
〜 タ？、ｆｆ弘 モルｑｂ）に二酸化マンガン（Ｍ？
！０２） ｏ、ｏｓ 〜ｏ、ｇ重量嗟（０，７）〜／、
Ａｔモル％）と酸化ランタン（ＬｔＬ２０ｓ）０．／〜
八へ重量係（ｏ、ｏｂ〜ｏ、ｇダ モル％）とを添加し
た半導体磁器の結晶粒界に酸化ビスマス（Ｂｚ２０Ｂ
） 等を拡散させ、絶縁体化した組成物が開示さｎて
いる。この組成物は誘電率が、ｕ１０００〜５２０００
、誘電損失（−）が、０．７〜ｏ、を憾、誘電率の温
度変化が、−ＪＯ℃〜＋ｔＳＣの範囲において±ｇ％以
下なる特性を有しており、誘電損失、温度変化は著しく
改善さｎている。Furthermore, in recent years, many materials containing strontium titanate (5rTiOs) as a main component have been reported to improve the above-mentioned drawbacks. For example, the Special Public Service in 1986-
φt, gtt Publication IC is strontium titanate
Mudeku, 7-99. g! T Weight Section (Tough, Da 7)
~ Ta? , ff Hiro mole qb) to manganese dioxide (M?
! 02) o, os ~ o, g weight (0,7) ~/,
At mol %) and lanthanum oxide (LtL20s) 0. /~
Bismuth oxide (Bz20B
) and the like have been disclosed to form an insulator. This composition has a dielectric constant of u1000 to 52000.
, the dielectric loss (-) is 0.7~o, and the temperature change in the dielectric constant is less than ±g% in the range of -JO℃~+tSC, and the dielectric loss and temperature change are It has been significantly improved.
（発明が解決しようとする問題点）
然しなかも近年例えば回路のＩＣ化が、急速に進み、コ
ンデンサに対する小型、大容量化へのニーズは年々高く
なっており、誘電損失や誘電率の温度変化が少なく、し
かも高誘電率である組成物の開発が強く要求さｎている
。(Problems to be solved by the invention) However, in recent years, for example, the use of IC circuits has progressed rapidly, and the need for smaller capacitors and larger capacitances has been increasing year by year, and changes in dielectric loss and dielectric constant due to temperature changes have been increasing. There is a strong demand for the development of a composition that has a low dielectric constant and a high dielectric constant.
本発明は前記に応するものであって、チタン酸ストロン
チウムを主成分とし極めて高い誘電率を有し、かつ誘電
損失、誘電率の温度変化が少ないという特性を具備した
組成物を提供することを目的とするものである。The present invention is in accordance with the above, and aims to provide a composition that contains strontium titanate as a main component, has an extremely high dielectric constant, and has the characteristics of little dielectric loss and little temperature change in the dielectric constant. This is the purpose.
（問題点を解決するだめの手段）
丁なわち本発明は、主成分であるチタン酸ストロンチウ
ム（ＳｒＴｊ０３） デコ、ｏｏ〜９Ａ、００〜９６
．９４モル係に対して二酸化マンガン（Ｍｎ０２）を２
．ｔ６〜６．０８モルチ、酸化ケイ素なθ、１０〜／、
９０モル釜、原子価制御剤Ｙ ｏ、ｏｓ〜０．７９モル
％を添加してなる半導体磁器の結晶粒界を絶縁した粒界
絶縁型半導体磁器組成物に関する。(Means for Solving the Problems) In other words, the present invention uses strontium titanate (SrTj03), which is the main component, deco, oo~9A, 00~96
．． 2 manganese dioxide (Mn02) for 94 molar ratio
．． t6~6.08molti, silicon oxide θ, 10~/,
The present invention relates to a grain boundary insulated semiconductor ceramic composition which insulates the crystal grain boundaries of semiconductor ceramic, which is formed by adding a 90 mol pot and a valence control agent Yo, os to 0.79 mol %.
原子価制御剤とし℃は、酸化ランタン、酸化イツトリウ
ム、酸化ニオブ、酸化タンタル、酸化タングステンの５
ちの少なくも１種を用いるのが好ましい。As a valence control agent, ℃ is 5 of lanthanum oxide, yttrium oxide, niobium oxide, tantalum oxide, and tungsten oxide.
It is preferable to use at least one of these.
又、結晶粒界の絶ｆ＆Ａ！、通常の方法、例えばＢｚ２
０Ｂ、島２ｏ ｓ Ｂ ２０３等を磁器半導体表面に微
量塗布した後、こｒＬＹ結晶粒界内に熱拡散させること
により行わｎる。Also, the absolute f&A of grain boundaries! , in the usual way, e.g. Bz2
This is carried out by applying a small amount of 0B, island 2osB 203, etc. on the surface of the ceramic semiconductor, and then thermally diffusing this into the LY crystal grain boundaries.
次に各添加物の作用について記述する。Next, the effects of each additive will be described.
本発明の構成上特徴的な、比較的多量の二酸化マンガン
は、結晶粒子を成長させると共に、誘電率の湛夏変化な
、低減する機能を有す。その添加量が２．１４モル％未
満では、粒子成長が、不十分となり誘電率が低下し、ま
た誘電率の温度変化率が大きくなる。逆に、添加量がｔ
、、、ｏｇモル係越えると、結晶粒子の成長が抑制さｎ
て誘電率が低下し、誘電損失も増加してくる。A relatively large amount of manganese dioxide, which is characteristic of the structure of the present invention, has the function of growing crystal grains and reducing seasonal changes in dielectric constant. If the amount added is less than 2.14 mol %, grain growth will be insufficient, the dielectric constant will decrease, and the temperature change rate of the dielectric constant will increase. On the other hand, if the amount added is t
When the molar value exceeds n, the growth of crystal grains is suppressed.
As a result, the dielectric constant decreases and dielectric loss also increases.
酸化ケイ素は、二酸化マンガンとともに、結晶粒子を成
長させる機能乞存し、その添加量が、０．１０モル６未
満では、粒子成長が不十分となり誘電率が低下し、／、
９０モル％を越えた場合には結晶粒子の成長が抑制さｎ
て、誘電率が低下し、誘電損失の増加が、著しくなる。Silicon oxide, together with manganese dioxide, has the function of growing crystal grains, and if the amount added is less than 0.10 mol 6, grain growth will be insufficient and the dielectric constant will decrease.
If it exceeds 90 mol%, the growth of crystal grains will be suppressed.
As a result, the dielectric constant decreases and the dielectric loss increases significantly.
原子価制御剤としては酸化ランタン、酸化イツトリウム
、酸化ニオブ、酸化タンタル、酸化タングステン等が好
ましく、こｎｒ−）は、チタン酸ストロンチウムの半導
体化を促進するものであるが、その添加量が、Ｏ，ＯＳ
モル冬未満では、半導体の体積抵抗率が高くなって、誘
電率が低下し、誘電損失も若干増加する。また、添加量
が０、／９モル優欠越えろ場合ＶＣは、結晶粒子の成長
が抑制さｎで誘電率が低下するとともに、誘電損失が増
加し、絶縁抵抗も低下し好ましくない。As the valence control agent, lanthanum oxide, yttrium oxide, niobium oxide, tantalum oxide, tungsten oxide, etc. are preferable. ,OS
Below the molar temperature, the volume resistivity of the semiconductor increases, the dielectric constant decreases, and the dielectric loss slightly increases. Further, if the amount of VC added exceeds 0./9 mol, the growth of crystal grains is suppressed, the dielectric constant decreases, the dielectric loss increases, and the insulation resistance decreases, which is not preferable.
（発明の効果）
本発明の粒界絶縁型半導体組成物は誘電率が、／Ｘ）０
００− ／４００００と極めて高く、且つ誘電損失（（
４））が、０．１％以下、誘１！率の湯度変化範囲が、
−３℃〜十ｔ５℃ において、−ｇ〜＋ｆを である
ので優ｎた特性のコンデンサの提供が可能となり、回路
の小型化、高信頓性という面で、工業上、有用である。(Effect of the invention) The grain boundary insulated semiconductor composition of the invention has a dielectric constant of /X)0
00-/40000, and the dielectric loss ((
4)) is less than 0.1%, 1%! The temperature change range of the rate is
Since -g to +f is from -3°C to 50°C, it is possible to provide a capacitor with excellent characteristics, which is industrially useful in terms of circuit miniaturization and high reliability.
（実施例および比較例） 次に１本発明を実施例および比較例により詳述する。(Example and comparative example) Next, the present invention will be explained in detail with reference to Examples and Comparative Examples.
実施例１
ｓｇ’ｒｓｏｓ ％Ｍｘ０２．５ｓ０２、ｙ、ｏｓがそ
ｎぞｊＬ ９’１．Ｉ、ｇモル係、 ４ｔ、２０モル％
、へ〇〇モル冬、θ、／２モル係になるように秤量し、
湿式ボールミルで２ｔ時間粉砕混合を行った。こｒＬケ
乾燥後、バインダーとし℃ポリビニルアルコール２重ｆ
ｔ％ｖ加えて６ｏメツシユのふるいを通し℃造粒し、コ
ドン／ｄの圧力で直径／コ瘤、厚さ０．６Ｗａｎ の円
板に成型した。Example 1 sg'rsos %Mx02.5s02,y,os is sojL 9'1. I, g mole ratio, 4t, 20 mole%
, Weigh to 〇〇mol winter, θ, /2 mol,
Grinding and mixing were performed for 2 tons using a wet ball mill. After drying, use polyvinyl alcohol as a binder.
t%v was added to the mixture, and the mixture was granulated at °C through a 60 mesh sieve, and molded into a disk having a diameter/column and a thickness of 0.6 Wan at a pressure of codon/d.
次いで、この円板試料を大気電灯０℃で グ時間仮焼し
てバインダーを燃焼させた後、室温まで、冷却した。こ
の試料ｙａｌ−窒素灯容量憾、水素５容量％Ｄ・らなる
微還元性雰囲気中で１１４２０℃、ユ時間焼成し、半導
体磁器を得た。Next, this disk sample was calcined under an atmospheric lamp at 0° C. for a period of time to burn off the binder, and then cooled to room temperature. This sample was fired at 11,420 DEG C. for an hour in a slightly reducing atmosphere consisting of a nitrogen lamp and 5% hydrogen by volume D. to obtain semiconductor porcelain.
この半導体磁器の表面は絶縁剤であろＢ＜２０３？：０
．ｇ■塗布后、大気中で１２２！℃で１時間焼成するこ
とにより結晶粒界を絶縁して、５ｔＴｊ０３１Ｍ＋＄０
２、ｓ＜ｏ２、Ｙ２Ｏ３が前記のモル憾の割合で含有さ
ｎている本発明の半導体ら器の結晶粒界を絶縁した粒界
絶縁型半導体磁器組成物が得ら几た。The surface of this semiconductor porcelain is an insulator, right? B<203? :0
．． g ■ After application, 122 in the atmosphere! By baking at ℃ for 1 hour, the grain boundaries were insulated and 5tTj031M+$0
A grain boundary insulated semiconductor ceramic composition was obtained which insulated the crystal grain boundaries of the semiconductor spiral of the present invention and contained Y2O3 in the molar ratio 2, s<o2, as described above.
このものを試料とし、表裏両面に銀′６極ｒ＜ｒｓｏ’
ｃ、３０分間焼付して形成し、電気特性を計測した誘電
率、誘電損失は＋２０℃、周波数／ Ｋ Ｈｚで計測を
行った。また誘電率の温度変化率は、＋ ｉ Ｃの値を
基準とし”ｃ、−ｐｃ〜＋ｇｓ℃の温度範囲においてそ
の変化率（喝を示す。This is used as a sample, with silver '6 poles r<rso' on both the front and back sides.
c. It was formed by baking for 30 minutes, and the electrical properties were measured. The dielectric constant and dielectric loss were measured at +20°C and frequency/KHz. Further, the temperature change rate of the dielectric constant is expressed as the rate of change in the temperature range from -pc to +gs°C with the value of + i C as a reference.
前述の原料組成、即ち生成せる半導体磁器組成物の組成
を第１衣に、電気特性を第２我に示す。The above-mentioned raw material composition, ie, the composition of the semiconductor ceramic composition to be produced, is shown in the first column, and the electrical characteristics are shown in the second column.
実施例２〜７ 比較例１〜６
原料組成をかえた以外、実施例１と全く同条件で半導体
磁器組成物を作成、実ボ例１と同様ＶＣ電気特性を測定
した。そｎぞｎの原料組成を第１表に、電気特性を第２
表に示す。Examples 2 to 7 Comparative Examples 1 to 6 Semiconductor ceramic compositions were prepared under exactly the same conditions as in Example 1 except that the raw material composition was changed, and the VC electrical properties were measured in the same manner as in Example 1. The raw material composition of each material is shown in Table 1, and the electrical properties are shown in Table 2.
Shown in the table.
第１表
第２表
以上の実施例、比較例より本発明の半導体磁器の結晶粒
界を絶縁した粒界絶縁型半導体磁器組成物はその誘電率
が／ ２０００θ〜／６θ０００と極めて高く、かつ誘
電損失−δは０．Ａ〜ｏ、ｇダ・と少なく、さらに誘電
率の変化も±を優と少ないという丁−ぐｎた特性な有す
る。From the Examples and Comparative Examples shown in Table 1 and Table 2, the grain boundary insulated semiconductor ceramic composition of the present invention, which insulates the grain boundaries of the semiconductor ceramic, has an extremely high dielectric constant of /2000θ to /6θ000, and has a high dielectric constant. Loss - δ is 0. It has a very small amount of A to O, and only a small amount of G, and the change in dielectric constant is very small.
Claims (2)
〜９６．９４モル％に対して、二酸化マンガンを２．８
６〜６．０８モル％、酸化ケイ素を０．１０〜１．９０
モル％、原子価制御剤を０．０５〜０．１９モル％を添
加してなる半導体磁器の結晶粒界を絶縁した粒界絶縁型
半導体磁器組成物。(1) Strontium titanate, the main component, 92.00
~96.94 mol% with 2.8 manganese dioxide
6-6.08 mol%, silicon oxide 0.10-1.90
A grain boundary insulated semiconductor ceramic composition which insulates the crystal grain boundaries of semiconductor ceramic, which is obtained by adding 0.05 to 0.19 mol % of a valence control agent.
、酸化ニオブ、酸化タンタル、酸化タングステンの少な
くとも１種である特許請求の範囲第１項の粒界絶縁型半
導体磁器組成物。(2) The grain boundary insulated semiconductor ceramic composition according to claim 1, wherein the valence control agent is at least one of lanthanum oxide, yttrium oxide, niobium oxide, tantalum oxide, and tungsten oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61144795A JPH0734415B2 (en) | 1986-06-23 | 1986-06-23 | Grain boundary insulation type semiconductor porcelain composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61144795A JPH0734415B2 (en) | 1986-06-23 | 1986-06-23 | Grain boundary insulation type semiconductor porcelain composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS632310A true JPS632310A (en) | 1988-01-07 |
| JPH0734415B2 JPH0734415B2 (en) | 1995-04-12 |
Family
ID=15370630
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61144795A Expired - Lifetime JPH0734415B2 (en) | 1986-06-23 | 1986-06-23 | Grain boundary insulation type semiconductor porcelain composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0734415B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6316504A (en) * | 1986-07-05 | 1988-01-23 | キヤノン株式会社 | Ceramic forming composition and semiconductor ceramic substrate, dielectric ceramic substrate and capacitor using the same |
| JPS63289706A (en) * | 1987-05-20 | 1988-11-28 | Canon Inc | Ceramic forming constituent and both semiconductor and dielectric ceramic substrates as well as condenser therewith |
| US5061575A (en) * | 1988-05-31 | 1991-10-29 | Kawasaki Steel Corporation | Lubricating resin coated steel strips having improved formability and corrosion resistance |
-
1986
- 1986-06-23 JP JP61144795A patent/JPH0734415B2/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6316504A (en) * | 1986-07-05 | 1988-01-23 | キヤノン株式会社 | Ceramic forming composition and semiconductor ceramic substrate, dielectric ceramic substrate and capacitor using the same |
| JPS63289706A (en) * | 1987-05-20 | 1988-11-28 | Canon Inc | Ceramic forming constituent and both semiconductor and dielectric ceramic substrates as well as condenser therewith |
| US5061575A (en) * | 1988-05-31 | 1991-10-29 | Kawasaki Steel Corporation | Lubricating resin coated steel strips having improved formability and corrosion resistance |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0734415B2 (en) | 1995-04-12 |
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