JPH03285867A - Grain boundary insulation type semiconductor porcelain composition and production thereof - Google Patents
Grain boundary insulation type semiconductor porcelain composition and production thereofInfo
- Publication number
- JPH03285867A JPH03285867A JP2085246A JP8524690A JPH03285867A JP H03285867 A JPH03285867 A JP H03285867A JP 2085246 A JP2085246 A JP 2085246A JP 8524690 A JP8524690 A JP 8524690A JP H03285867 A JPH03285867 A JP H03285867A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor porcelain
- grain boundary
- composition
- present
- general formula
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 25
- 239000000203 mixture Substances 0.000 title claims abstract description 20
- 229910052573 porcelain Inorganic materials 0.000 title claims abstract description 13
- 238000009413 insulation Methods 0.000 title description 3
- 238000004519 manufacturing process Methods 0.000 title description 3
- 229910052796 boron Inorganic materials 0.000 claims abstract description 7
- 229910052745 lead Inorganic materials 0.000 claims abstract description 7
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 7
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 7
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 7
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 7
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 6
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 5
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 4
- 229910052802 copper Inorganic materials 0.000 claims abstract description 4
- 239000000919 ceramic Substances 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 4
- 238000010304 firing Methods 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 abstract description 9
- 229910052748 manganese Inorganic materials 0.000 abstract description 5
- 239000002245 particle Substances 0.000 abstract description 3
- 229910044991 metal oxide Inorganic materials 0.000 abstract description 2
- 238000000465 moulding Methods 0.000 abstract description 2
- 239000002994 raw material Substances 0.000 abstract description 2
- 239000000463 material Substances 0.000 abstract 3
- 229910010252 TiO3 Inorganic materials 0.000 abstract 1
- 238000001354 calcination Methods 0.000 abstract 1
- 230000014509 gene expression Effects 0.000 abstract 1
- 239000003985 ceramic capacitor Substances 0.000 description 7
- 230000007423 decrease Effects 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229920005822 acrylic binder Polymers 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- LEDMRZGFZIAGGB-UHFFFAOYSA-L strontium carbonate Chemical compound [Sr+2].[O-]C([O-])=O LEDMRZGFZIAGGB-UHFFFAOYSA-L 0.000 description 1
- 229910000018 strontium carbonate Inorganic materials 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野コ
本発明は、磁器コンデンサ等に用いるための粒界絶縁型
半導体磁器組成物に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a grain boundary insulated semiconductor ceramic composition for use in ceramic capacitors and the like.
［従来の技術］
従来、小型で容量の大きいコンデンサとして、粒界絶縁
型半導体磁器コンデンサが知られている。[Prior Art] Grain-boundary insulated semiconductor ceramic capacitors have been known as small-sized, large-capacity capacitors.
粒界絶縁型半導体磁器コンデンサは、結晶粒界を絶縁化
することにより実効誘電率を大きくしたものである。A grain boundary insulated semiconductor ceramic capacitor has a large effective dielectric constant by insulating the grain boundaries.
粒界絶縁型半導体磁器コンデンサに用いられる磁器組成
物としては、主成分に、チタン酸ストロンチウムまたは
チタン酸バリウムを用い、原子価制御用助剤として、Ｎ
ｂ２０１、Ｙ２Ｏ１、Ｄｙ２０、等を添加し、さらに、
焼結助剤として、Ｍｎｏ２、Ｂ ｉ ２０ｓ 、ＣｕＯ
１Ｓ ｉ Ｏｘ等が用いられる。The ceramic composition used in grain boundary insulated semiconductor ceramic capacitors uses strontium titanate or barium titanate as the main component, and N as an auxiliary agent for valence control.
b201, Y2O1, Dy20, etc. are added, and further,
As sintering aids, Mno2, B i 20s, CuO
1S i Ox etc. are used.
例えば、特開昭５６−５４０２６には、（Ｓｒ□１Ｂａ
ｘ）ＴｉＯｌ（ｘ＝０．３０〜０．５０）を主体とし、
その他にチタン酸塩、ジルコン酸塩を含んだ主成分に対
してＬａ、Ｙなどの希土類元素、Ｎｂ、Ｔａ、Ｗなどの
ような半導体化剤とＭｎを含有し、結晶粒界がＭｎ、Ｂ
ｉ、Ｃｕ、Ｐｂ、ＢおよびＳｉのうちの少なくとも１種
（ただし、ＢＮＢｉのいづれか１種のみは除く）により
絶縁体化されてなる最大粒径が１００μｍ以上の粒界絶
縁型半導体磁器組成物である。For example, in JP-A-56-54026, (Sr□1Ba
x) TiOl (x = 0.30 to 0.50) as the main component,
In addition, the main components including titanate and zirconate contain rare earth elements such as La and Y, semiconducting agents such as Nb, Ta, and W, and Mn, and the crystal grain boundaries are formed by Mn and B.
A grain boundary insulated semiconductor ceramic composition having a maximum grain size of 100 μm or more and made into an insulator by at least one of i, Cu, Pb, B and Si (excluding only one of BNBi). be.
近年、磁器コンデンサの小型化の要求に伴い、粒界絶縁
型半導体磁器コンデンサにおいても、より小型化、薄形
化の要求が高まっている。In recent years, with the demand for smaller ceramic capacitors, there has also been an increasing demand for smaller and thinner grain boundary insulated semiconductor ceramic capacitors.
［発明が解決しようとする課題］
従来の粒界絶縁型半導体磁器では、見掛は誘電率を大き
くする必要から粒径を比較的大きくしていた。しかしな
がら、近年の要求に従い、磁器組成物の層を薄くした場
合には、厚み当りの結晶粒子の数が少なくなってしまう
、そのため、単位厚さ当りの絶縁破壊電圧が小さくなり
、その結果、誘電率と絶縁破壊電圧との積が小さくなっ
てしまっていた。その結果、粒界絶縁型半導体磁器コン
デンサの薄型化、小型化が困難であった。[Problems to be Solved by the Invention] In conventional grain boundary insulated semiconductor porcelain, the grain size has been made relatively large because it is necessary to increase the apparent dielectric constant. However, when the layer of the porcelain composition is made thinner in accordance with recent demands, the number of crystal grains per thickness decreases, resulting in a decrease in dielectric breakdown voltage per unit thickness, and as a result, the dielectric The product of the ratio and the dielectric breakdown voltage had become small. As a result, it has been difficult to reduce the thickness and size of grain boundary insulated semiconductor ceramic capacitors.
本発明は、最大粒径を５０〜８０μｍに制御可能であり
、かつ、厚み当りの誘電率と絶縁破壊電圧との積が大き
い粒界絶縁型半導体磁器組成物およびその製造方法を提
供することを目的とする。The present invention aims to provide a grain boundary insulated semiconductor ceramic composition whose maximum grain size can be controlled to 50 to 80 μm and which has a large product of dielectric constant per thickness and dielectric breakdown voltage, and a method for producing the same. purpose.
［課題を解決するための手段］
本発明は、上記目的を達成するために、以下の組成の粒
界絶縁型半導体磁器組成物を提供する。[Means for Solving the Problems] In order to achieve the above object, the present invention provides a grain boundary insulated semiconductor ceramic composition having the following composition.
すなわち、（Ｓ ｒ １−１１ Ｂａｇ Ｍｙ ） Ｔ
ｉｓ ０３＋ｍＮ＋ｎＺ （但、Ｍは、Ｎｂ、Ｔａ、
Ｗ、及び希土類元素のうち少なくとも１種類、Ｎは、Ｍ
ｎ、Ａｌ、及びＳｉのうち少なくとも１種類、２は、Ｐ
ｂ、Ｂの一方又は両方）で表され、ｘ、ｙ、 ｊｌ、ｍ
、ｎがそれぞれ、０．０００１≦ｘ≦０．０５．０．０
０１≦ｙ≦０．０３．０．９９０≦１≦１゜０１０、ｏ
、ｏｏｏｉ≦ｍ≦０．０１．０．００１≦ｎ≦０．０３
の範囲にある半導体磁器の結晶粒界が、Ｃｕ、Ｂｉ、Ｐ
ｂ、ＢＮ及びＳｉのうち少なくとも１種を含む化合物に
より絶縁された粒界絶縁型半導体磁器組成物である。That is, (S r 1-11 Bag My ) T
is 03+mN+nZ (However, M is Nb, Ta,
W, at least one kind of rare earth element, N is M
At least one of n, Al, and Si, 2 is P
b, one or both of B), x, y, jl, m
, n is 0.0001≦x≦0.05.0.0, respectively.
01≦y≦0.03.0.990≦1≦1゜010, o
, oooi≦m≦0.01.0.001≦n≦0.03
The grain boundaries of semiconductor porcelain in the range of Cu, Bi, P
b, a grain boundary insulated semiconductor ceramic composition insulated by a compound containing at least one of BN and Si.
また、一般式（Ｓ ｒ １−＋ｃ Ｂ ａ ＩＩ Ｍ
ｙ ） Ｔ １ ｓ ０３＋ｍＮ＋ｎＺ （但、Ｍは、
Ｎｂ、Ｔａ、Ｗ、及び希土類元素のうち少なくとも１種
類、Ｎは、Ｍｎ、Ａｌ、及びＳｉのうち少なくとも１種
類、Ｚは、Ｐｂ、Ｂの一方又は両方）で表され、ｘ、ｙ
、Ｉｔ、ｍ、ｎが、それぞれ、０．０００１≦ｘ≦０゜
０５、ｏ、ｏｏｉ≦ｙ≦０．０３．０．９９０≦ｐ≦１
．０１０．０．０００１≦ｍ≦０．０１．０．００１≦
ｎ≦０．０３、の範囲になるように配合した後、焼成す
ることによって半導体磁器を得る工程と、前記工程によ
って得られた半導体磁器の結晶粒界をＣｕ、Ｂｉ、Ｐｂ
、ＢＮ及びＳｉのうち少なくとも１種を含む化合物を用
いて絶縁化する工程とを有する粒界絶縁型半導体磁器組
成物の製造方法である。Moreover, the general formula (S r 1-+c B a II M
y) T 1 s 03+mN+nZ (However, M is
Nb, Ta, W, and at least one of rare earth elements, N is at least one of Mn, Al, and Si, Z is one or both of Pb and B), x, y
, It, m, and n are respectively 0.0001≦x≦0゜05, o, ooi≦y≦0.03.0.990≦p≦1
．． 010.0.0001≦m≦0.01.0.001≦
A step of obtaining semiconductor porcelain by blending so that n≦0.03, and then firing;
, and a step of insulating using a compound containing at least one of BN and Si.
以下、本発明の数値範囲の限定理由について説明する。The reason for limiting the numerical range of the present invention will be explained below.
本発明のＸの範囲は、０．０００１≦ｘ≦０゜０５であ
る。すなわち、０．０００１未満では、原材料の精製が
困難であり実用上問題がある。また、０．０５よりも大
きいと、見掛は誘電率が低下してしまい、本発明の目的
を達成することができない。The range of X in the present invention is 0.0001≦x≦0°05. That is, if it is less than 0.0001, it is difficult to purify the raw material and there is a practical problem. On the other hand, if it is larger than 0.05, the apparent dielectric constant will decrease, making it impossible to achieve the object of the present invention.
一般式中Ｍとして用いられるＮｂ、Ｔａ、Ｗ、及び希土
類元素のうち少なくとも１種類の含有範囲を示すｙの範
囲は、０．００１≦ｙ≦０．０３である。０．００１未
満であっても、０．０３よりも大きくても、結晶の半導
体化が困難になり本発明の目的を達成することができな
い。The range of y, which indicates the content range of at least one of Nb, Ta, W, and rare earth elements used as M in the general formula, is 0.001≦y≦0.03. If it is less than 0.001 or greater than 0.03, it becomes difficult to convert the crystal into a semiconductor, and the object of the present invention cannot be achieved.
一般式中のＴｉの含有範囲を示すｐの範囲は、０．９９
０≦１≦１．０１０である。０．９９０未満では、粒径
７０μｍよりも大きい結晶粒子が生じてしまう。また、
１．０１０よりも大きくなると、結晶粒子の平均粒径が
５０μｍ以下になってしまい、十分な見掛は誘電率を得
ることができなくなり、本発明の目的を達成することが
できない。The range of p indicating the content range of Ti in the general formula is 0.99
0≦1≦1.010. If it is less than 0.990, crystal grains with a grain size larger than 70 μm will be produced. Also,
If it is larger than 1.010, the average grain size of the crystal grains will be 50 μm or less, making it impossible to obtain a sufficient apparent dielectric constant and failing to achieve the object of the present invention.
一般式中Ｎとして用いられるＭｎ、Ａｌ、及びＳｉのう
ち少なくとも１種類の含有範囲を示すｍの範囲は、０．
０００１≦ｍ≦０．０１である。The range of m indicating the content range of at least one of Mn, Al, and Si used as N in the general formula is 0.
0001≦m≦0.01.
０．０００１未満では、見掛は誘電率が小さくなり、本
発明に目的を達成することができない。また、０．０１
よりも大きいと、見掛は誘電率が低下してしまい、また
、誘電体損失も悪くなり、本発明の目的を達成すること
ができない。If it is less than 0.0001, the apparent dielectric constant becomes small and the purpose of the present invention cannot be achieved. Also, 0.01
If it is larger than this, the apparent dielectric constant will decrease and the dielectric loss will also worsen, making it impossible to achieve the object of the present invention.
一般式中Ｚとして用いられるＰｂ、Ｂの一方又は両方を
含有させることにより、結晶粒子の制御が可能になる。By including one or both of Pb and B, which are used as Z in the general formula, control of crystal grains becomes possible.
その範囲を示すｎの範囲は、０゜００１≦ｎ≦０．０３
である。０．００１未満では、８０μｍよりも大きい結
晶粒子が生じ、絶縁破壊電圧が低くなる。また、０．０
３よりも大きいと、焼成温度が高くなり、また絶縁破壊
電圧も低くなり、本発明の目的を達成することができな
い。The range of n that indicates the range is 0°001≦n≦0.03
It is. If it is less than 0.001, crystal grains larger than 80 μm will be produced, resulting in a low dielectric breakdown voltage. Also, 0.0
If it is larger than 3, the firing temperature will be high and the dielectric breakdown voltage will also be low, making it impossible to achieve the object of the present invention.
なお、本発明の一般式中、ｍ及びｎは、酸化物の形で含
まれる場合には、例えば一般式Ｘａ Ｏｂとして示され
るものをＸ Ｏｂ／ａの形に直したときのＸの元素の量
で表される。In addition, in the general formula of the present invention, when m and n are included in the form of an oxide, for example, when the general formula XaOb is changed to the form XOb/a, the element of X is expressed in quantity.
また、本発明に用いられている数値は、すべてモル（ｍ
ｏｌ）で示した値である。Furthermore, all numerical values used in the present invention are in moles (m
ol).
［実施例コ 以下、実施例により本発明を具体的に説明する。[Example code] Hereinafter, the present invention will be specifically explained with reference to Examples.
まず、第１表の試料１の調製方法とその電気的特性につ
いて説明する。First, the preparation method of Sample 1 shown in Table 1 and its electrical characteristics will be explained.
ＳｒＣＯ３、ＢａＣ０，、Ｔｉｏ□、Ｙ２Ｏ５、ＭｎＯ
２、Ｂ２Ｏ３の化合物を第１表の試料番号１に示す組成
比になるように配合し、１１５０℃で２時間仮焼を行っ
た。SrCO3, BaC0,, Tio□, Y2O5, MnO
2. B2O3 compounds were blended to have the composition ratio shown in sample number 1 in Table 1, and calcined at 1150°C for 2 hours.
これを粉砕し、アクリル系バインダを１０ｗｔ％加え、
攪拌した後、５０メツシユのふるいで造粒し、成形圧力
１ ｔｏｎ／ＣＩ” 、直径１２．５ｍｍ、肉厚０．３
ｍｍの円板に成形した。Grind this, add 10wt% of acrylic binder,
After stirring, the mixture was granulated using a 50-mesh sieve, with a molding pressure of 1 ton/CI'', a diameter of 12.5 mm, and a wall thickness of 0.3.
It was molded into a disk of mm.
得られた円板状成形体を、窒素９８ＶＯＩ％、水素２ｖ
０１％からなる還元雰囲気にて１４００℃で３時間焼成
し、半導体磁器を得た。The obtained disc-shaped molded body was heated with 98 VOI% nitrogen and 2 v hydrogen.
Semiconductor porcelain was obtained by firing at 1400° C. for 3 hours in a reducing atmosphere consisting of 0.01%.
得られた半導体磁器の表面に金属酸化物ペースト、具体
的には、ＢｉｚＯｓを４ Ｑ ｗ ｔ％、ｐｂ、０４を
４６ ｗ ｔ％、Ｂ ２０ ｓを７ ｗ ｔ％、ＣａＯ
を６ ｗ ｔ％、５ｉＯｚを１ｗｔ％および樹脂を溶剤
に添加したペーストを塗布し、１１５０℃で２時間熱拡
散させ、結晶粒界を絶縁化した。A metal oxide paste was applied to the surface of the obtained semiconductor porcelain, specifically BizOs at 4 Q wt%, Pb, 04 at 46 wt%, B20S at 7 wt%, CaO.
A paste containing 6 wt % of 5iOz, 1 wt % of 5iOz, and a resin added to a solvent was applied and thermally diffused at 1150° C. for 2 hours to insulate the grain boundaries.
さらに、この粒界絶縁型半導体磁器の表面に銀ペースト
を印刷することによって塗布し、８００℃で１時間焼き
付けることによってコンデンサを作成した。Furthermore, a capacitor was fabricated by applying a silver paste to the surface of this grain boundary insulated semiconductor porcelain by printing and baking it at 800° C. for 1 hour.
（以下余白）
第１表
こうして得られたコンデンサの電気的特性を測定したと
ころ、第２表の試料番号１に示す結果を得ることができ
た。(The following is a blank space) Table 1 When the electrical characteristics of the capacitor thus obtained were measured, the results shown in sample number 1 in Table 2 could be obtained.
試料番号２以降の組成物についても、同様の条件にてコ
ンデンサを作成し、同様の条件にて電気的特性を測定し
な。Concerning the compositions after sample number 2, capacitors were prepared under the same conditions and the electrical characteristics were measured under the same conditions.
表中、見掛は誘電率（ε）、誘電体損失（ｔａｎδ）は
、温度２５℃にて周波数１ｋＨｚ、電圧１Ｖ７ａ＋ｓで
測定した値であり、絶縁抵抗（ＩＲ）は、温度２５℃に
て２５Ｖの直流電圧を印加した１５秒後の値であり、温
度特性（ＴＣ）は、温度２０°Ｃを基準とし、−２５℃
〜８５℃の温度範囲における最大容量変化率の値であり
、表中、上段は、最大容量増加率を示し、下段は、最大
容量減少率を示す。また、誘電率と絶縁破壊電圧との積
（εＸＢＤＶ）は、１ｍｍ当りの誘電率と絶縁破壊電圧
との積を示す。In the table, the apparent dielectric constant (ε), the dielectric loss (tan δ) are the values measured at a temperature of 25°C, a frequency of 1kHz, and a voltage of 1V7a+s, and the insulation resistance (IR) is a value measured at a temperature of 25°C and a voltage of 1V7a+s. This is the value 15 seconds after applying the DC voltage, and the temperature characteristic (TC) is based on the temperature of 20°C,
These are the values of the maximum capacity change rate in the temperature range of ~85° C. In the table, the upper row shows the maximum capacity increase rate, and the lower row shows the maximum capacity decrease rate. Further, the product of dielectric constant and dielectric breakdown voltage (εXBDV) indicates the product of dielectric constant and dielectric breakdown voltage per 1 mm.
なお、表中、試料番号の右上に示される＊は、本発明の
範囲外の試料、すなわち、比較例であることを示す。In addition, in the table, * shown in the upper right corner of the sample number indicates that it is a sample outside the scope of the present invention, that is, a comparative example.
本実施例の試料番号１〜４．７〜９．１２〜１４．１７
〜１９及び２２〜２４に示されるように、本発明によれ
ば、最大粒径が５０〜７０μｍであり、絶縁抵抗が１５
００ＭΩ以上であり、かつ、誘電率と絶縁破壊電圧との
積が７．０ＸＩＯ’以上の粒界絶縁型半導体磁器組成物
を得ることができる。Sample numbers 1-4.7-9.12-14.17 of this example
As shown in 19 and 22 to 24, according to the present invention, the maximum grain size is 50 to 70 μm, and the insulation resistance is 15
It is possible to obtain a grain boundary insulated semiconductor ceramic composition having a resistance of 00 MΩ or more and a product of dielectric constant and dielectric breakdown voltage of 7.0XIO' or more.
一方、本発明の範囲外の試料番号５．６．１０．１１．
１５．１６．２０．２１．２５においては、本発明の目
的を達成することができない。On the other hand, sample number 5.6.10.11. outside the scope of the present invention.
15.16.20.21.25, the object of the present invention cannot be achieved.
なお、本発明者らは、表中に示される実施例の組成に限
られず、特許請求の範囲に記載された組成範囲であれば
、本発明の範囲内の他の物質であっても本発明の効果を
得ることができることがわかっている。The present inventors believe that the present invention is not limited to the compositions of the examples shown in the table, and even other substances within the scope of the present invention can be used as long as they are within the composition range described in the claims. It is known that this effect can be obtained.
［効果］
本発明によれば、最大粒径を５０〜７０μｍに制御可能
であり、かつ、厚み当りの誘電率と絶縁成物およびその
製造方法を提供することができる。[Effects] According to the present invention, the maximum particle size can be controlled to 50 to 70 μm, and it is possible to provide an insulating composition with a dielectric constant per thickness, and a method for manufacturing the same.
Claims (1)
＿ｌＯ＿３＋ｍＮ＋ｎＺ（但、Ｍは、Ｎｂ、Ｔａ、Ｗ、
及び希土類元素のうち少なくとも１種類、Ｎは、Ｍｎ、
Ａｌ、及びＳｉのうち少なくとも１種類、Ｚは、Ｐｂ，
Ｂの一方又は両方）で表され、 ｘ、ｙ、ｌ、ｍ、ｎがそれぞれ ０．０００５≦ｘ≦０．０５ ０．００１≦ｙ≦０．０３ ０．９９０≦ｌ≦１．０１０ ０．０００１≦ｍ≦０．０１ ０．００１≦ｎ≦０．０３ の範囲にある半導体磁器の結晶粒界が、Ｃｕ、Ｂｉ、Ｐ
ｂ、ＢＮ及びＳｉのうち少なくとも１種を含む化合物に
より絶縁された粒界絶縁型半導体磁器組成物。 （２）一般式（Ｓｒ＿１＿−＿ｘＢａ＿ｘＭ＿ｙ）Ｔｉ
＿ｌＯ＿３＋ｍＮ＋ｎＺ（但、Ｍは、Ｎｂ、Ｔａ、Ｗ、
及び希土類元素のうち少なくとも１種類、Ｎは、Ｍｎ、
Ａｌ、及びＳｉのうち少なくとも１種類、Ｚは、Ｐｂ、
Ｂの一方又は両方）で表され、 ｘ、ｙ、ｌ、ｍ、ｎがそれぞれ ０．０００１≦ｘ≦０．０５ ０．００１≦ｙ≦０．０３ ０．９９０≦ｌ≦１．０１０ ０．０００１≦ｍ≦０．０１ ０．００１≦ｎ≦０．０３ の範囲になるように配合した後、焼成することによって
半導体磁器を得る工程と、 前記工程によって得られた半導体磁器の結晶粒界をＣｕ
、Ｂｉ、Ｐｂ、Ｂ、及びＳｉのうち少なくとも１種を含
む化合物を用いて絶縁化する工程とを有する粒界絶縁型
半導体磁器組成物の製造方法。[Claims] (1) General formula (Sr_1_-_xBa_xM_y)Ti
_lO_3+mN+nZ (However, M is Nb, Ta, W,
and at least one rare earth element, N is Mn,
At least one of Al and Si, Z is Pb,
one or both of B), and x, y, l, m, and n are each 0.0005≦x≦0.05 0.001≦y≦0.03 0.990≦l≦1.010 0. The crystal grain boundaries of semiconductor porcelain in the range of 0001≦m≦0.01 0.001≦n≦0.03 are Cu, Bi, P
b. A grain boundary insulated semiconductor ceramic composition insulated by a compound containing at least one of BN and Si. (2) General formula (Sr_1_−_xBa_xM_y)Ti
_lO_3+mN+nZ (However, M is Nb, Ta, W,
and at least one rare earth element, N is Mn,
At least one of Al and Si, Z is Pb,
one or both of B), and x, y, l, m, and n are each 0.0001≦x≦0.05 0.001≦y≦0.03 0.990≦l≦1.010 0. 0001≦m≦0.01 0.001≦n≦0.03 and then firing to obtain semiconductor porcelain; Cu
, a step of insulating using a compound containing at least one of Bi, Pb, B, and Si.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2085246A JPH07108812B2 (en) | 1990-03-30 | 1990-03-30 | Grain boundary insulating semiconductor ceramic composition and method for producing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2085246A JPH07108812B2 (en) | 1990-03-30 | 1990-03-30 | Grain boundary insulating semiconductor ceramic composition and method for producing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03285867A true JPH03285867A (en) | 1991-12-17 |
| JPH07108812B2 JPH07108812B2 (en) | 1995-11-22 |
Family
ID=13853213
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2085246A Expired - Lifetime JPH07108812B2 (en) | 1990-03-30 | 1990-03-30 | Grain boundary insulating semiconductor ceramic composition and method for producing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07108812B2 (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52147800A (en) * | 1976-06-03 | 1977-12-08 | Matsushita Electric Ind Co Ltd | Semiconductor ceramic capacitor composite and its method of manufacturing |
| JPS5654026A (en) * | 1979-10-09 | 1981-05-13 | Murata Manufacturing Co | Grain boundary insulating type semiconductor porcelain composition |
-
1990
- 1990-03-30 JP JP2085246A patent/JPH07108812B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52147800A (en) * | 1976-06-03 | 1977-12-08 | Matsushita Electric Ind Co Ltd | Semiconductor ceramic capacitor composite and its method of manufacturing |
| JPS5654026A (en) * | 1979-10-09 | 1981-05-13 | Murata Manufacturing Co | Grain boundary insulating type semiconductor porcelain composition |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07108812B2 (en) | 1995-11-22 |
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