JPS5815078A - High dielectric constant ceramic dielectric composition - Google Patents

High dielectric constant ceramic dielectric composition

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Publication number
JPS5815078A
JPS5815078A JP56109592A JP10959281A JPS5815078A JP S5815078 A JPS5815078 A JP S5815078A JP 56109592 A JP56109592 A JP 56109592A JP 10959281 A JP10959281 A JP 10959281A JP S5815078 A JPS5815078 A JP S5815078A
Authority
JP
Japan
Prior art keywords
dielectric constant
weight
oxide
dielectric
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56109592A
Other languages
Japanese (ja)
Other versions
JPS6351992B2 (en
Inventor
石原 久輝
石井 広明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KIYOURITSU YOUGIYOU GENRIYOU KK
KYORITSU CERAMIC MATERIALS
Original Assignee
KIYOURITSU YOUGIYOU GENRIYOU KK
KYORITSU CERAMIC MATERIALS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KIYOURITSU YOUGIYOU GENRIYOU KK, KYORITSU CERAMIC MATERIALS filed Critical KIYOURITSU YOUGIYOU GENRIYOU KK
Priority to JP56109592A priority Critical patent/JPS5815078A/en
Publication of JPS5815078A publication Critical patent/JPS5815078A/en
Publication of JPS6351992B2 publication Critical patent/JPS6351992B2/ja
Granted legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 本発明は高誘電率系磁器誘電体組成物に係り、特に誘電
率が著しく高く、しかも誘電率の温度変化率の小さい、
積層コンデンサ用として好適な磁器誘電体組成物に関す
るものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a high-permittivity ceramic dielectric composition, in particular a ceramic dielectric composition having an extremely high dielectric constant and a small temperature change rate of the dielectric constant.
The present invention relates to a ceramic dielectric composition suitable for use in multilayer capacitors.

従来、平担な誘電率温度特性を有する磁器誘電体として
は、チタン酸バリウム(、BaTi03)および酸化ビ
スマス(Bi2O3)を主成分とし、これに酸化スズ(
8n02 )または酸化チタン(TiO2)あるいは酸
化ジルコニウム(ZrO2)を添加したものがあるが、
何れも一30℃から+85°Cの温度範囲において誘電
率の温度変化率を110%以内にすると、誘電率が20
00以下と低くなり、また誘電率が2000以上のもの
ではその誘電率の温度変化率は上記温度範囲において±
10%を越えるものしか得られなかった。
Conventionally, porcelain dielectrics with flat permittivity-temperature characteristics have been mainly composed of barium titanate (BaTi03) and bismuth oxide (Bi2O3), with tin oxide (
8n02) or those with added titanium oxide (TiO2) or zirconium oxide (ZrO2),
In either case, if the temperature change rate of the dielectric constant is within 110% in the temperature range of -30℃ to +85℃, the dielectric constant will be 20%.
00 or less, and for those with a dielectric constant of 2000 or more, the temperature change rate of the dielectric constant is ± within the above temperature range.
Only more than 10% was obtained.

一方、かかる問題を解消する磁器誘電体組成物として、
BaTiO3及びBi2O3に、Nb2O5と。
On the other hand, as a porcelain dielectric composition that solves this problem,
BaTiO3 and Bi2O3 with Nb2O5.

Ce 02またはL a 203  とを加え、これに
よって110%以内の誘電率温度変化率で、しかも30
00〜8500の誘電率を達成するものが、特公昭55
−21402号公報に明らかにされている。
By adding Ce 02 or L a 203 , the dielectric constant temperature change rate is within 110%, and the temperature change rate is 30%.
The one that achieves a dielectric constant of 00 to 8500 is
This is disclosed in Publication No.-21402.

しかしながら、かかる組成物中に含まれるB r 20
3が、積層コンデンサを作る場合において、高い焼成温
度が採用されると、蒸発せしめられ、それによって電極
を傷める問題があり、それ故Bi2O3の如き成分i含
む組成物は、積層コンデンサ用としては不適当なもので
あったのである。
However, the B r 20 contained in such compositions
3. If a high firing temperature is used to make a multilayer capacitor, there is a problem that it will evaporate and thereby damage the electrodes. Therefore, compositions containing component i such as Bi2O3 are not suitable for multilayer capacitors. It was appropriate.

ここにおいて、本発明者らは、かかる磁器誘電体組成物
について種々検討した結果、その主成分たるBaTiO
3の形成過程において主として出発原料の炭酸バリウム
(BaC03)がら混入する酸化ストロンチウム゛(S
rO)と酸化カルシウム(CaO)が誘電率などの電気
的特性に悪影響をもたらし、それ故それらの含有量が特
定値以下となる高純度のBaTiO3が形成されるよう
にすると 。
Here, as a result of various studies on such porcelain dielectric compositions, the present inventors discovered that the main component, BaTiO
In the formation process of 3, strontium oxide (S
rO) and calcium oxide (CaO) have a negative effect on the electrical properties such as the dielectric constant, and therefore their content is below a certain value so that high-purity BaTiO3 is formed.

共に、これに酸化コバル)(00203)、酸化ニオブ
(Nb205)、酸化セリウム(CeO2)すどを組み
合わせることにより、平担な誘電率温度特性を有し、し
かも高誘電率である、積層コンデンサ用として好適な磁
器誘電体が得られることを見い出し、本発明に到達した
のである。
By combining this with cobal oxide (00203), niobium oxide (Nb205), and cerium oxide (CeO2), it has a flat dielectric constant temperature characteristic and a high dielectric constant for multilayer capacitors. They discovered that a suitable porcelain dielectric material can be obtained, and the present invention was achieved.

すなわち、本発明に係る高誘電率系磁器誘電体組成物は
、SrOとCaOの合計含有量が0,5重量%以下であ
る高純度のBaTi0−395〜99重量%と、Co2
030.05〜0.5重量%と、Nb2050.5〜2
重量%と、Ce 020.05〜0.5重量%と、たる
磁器誘電体組成物によれば、平担な誘電率温度特性が達
成され、特に−30°Cから+80’Cの温度範囲内に
おいて+25°Cの誘電率を基準としたときその誘電率
の温度変化率が±10%以内であるものが容易に得られ
るのであり、しかも同時にその誘電率も容易に8000
以上、特に4000I〜4500もの高い値と為し得る
のである。
That is, the high permittivity ceramic dielectric composition according to the present invention contains high-purity BaTi0-395 to 99% by weight in which the total content of SrO and CaO is 0.5% by weight or less, and Co2.
030.05~0.5% by weight and Nb2050.5~2
According to the barrel porcelain dielectric composition with 0.05% to 0.5% by weight of Ce 02, a flat dielectric constant temperature characteristic is achieved, especially within the temperature range of -30°C to +80'C. When using the dielectric constant of +25°C as a standard, it is easy to obtain a dielectric constant whose temperature change rate is within ±10%, and at the same time, the dielectric constant can be easily increased to 8000.
In particular, a value as high as 4000I to 4500 can be obtained.

また、かかる本発明に従う磁器誘電体組成物にあっては
、Bi203 、 PbO等の蒸発成分を含有していな
いために、高温の焼成温度が採用されても電極を傷める
ようなことは全くなく、それ散積層コンデンサ用として
好適に用いられ得るものである。
Furthermore, since the porcelain dielectric composition according to the present invention does not contain evaporable components such as Bi203 and PbO, the electrode will not be damaged at all even if a high firing temperature is employed. It can be suitably used for dispersed multilayer capacitors.

さらに、本組成物の磁器誘電体は、後述の実施例にても
示される如く8000時間、l0KV/+nmの電圧を
印加した後の各種性能において優れた特徴を有しており
、このことは10 K V/mm以上の耐電圧性を有す
る証左であるのであり、また他の組成によるチタン酸バ
リウム系高誘電率磁器誘電体の1〜7に■/InInに
比較しても、かなり耐電圧特性が高く、従って本発明に
よる磁器組成物は中・高圧用磁器コンデンサ用としても
好適であるのである。
Furthermore, as shown in the Examples below, the ceramic dielectric of the present composition has excellent characteristics in various performances after applying a voltage of 10 KV/+nm for 8000 hours, and this shows that This is proof that it has a voltage resistance of K V/mm or more, and it also has a considerably higher voltage resistance than other compositions of barium titanate-based high permittivity porcelain dielectrics 1 to 7/InIn. Therefore, the ceramic composition according to the present invention is also suitable for use in medium- and high-voltage ceramic capacitors.

なお、本発明においては、先ず、高純度のBaTiO3
を95〜99重量%、好ましくは97〜99重量%の割
合で組成物中に含有せしめる必要があり、その含有割合
が多過ぎたり、少な過ぎたりすると、誘電率が著しく低
下したり、誘電率の湿度変化が著しくなる等の問題を生
じる。そして、この高純度のBaTiO3は、SrOと
CaOを合計量で0.5重量%以下となるような割合で
含むように形成されねばならず、この割合を越える8r
O。
In addition, in the present invention, first, high-purity BaTiO3
It is necessary to contain 95 to 99% by weight, preferably 97 to 99% by weight, in the composition. If the content is too high or low, the dielectric constant may decrease significantly or This may cause problems such as significant humidity changes. This high-purity BaTiO3 must be formed so as to contain SrO and CaO in a total amount of 0.5% by weight or less;
O.

CaOの含有は誘電率を低下せしめ、また誘電率の温度
変化率を大きくする。特に、このような8rO,CaO
は、BaTiO3の出発原料ノーツであるBaCO3か
ら混入し易いので、Ba003として、8rO及びCa
O含有量の著しく低下せしめられたもの、即ち、従来の
97〜98%程度の純度(7) B a COsに代え
て、例えばSrO,CaOの減少せしめられた純度が9
9%以上、好ましくは99.5%以上のBaCO3原料
の使用が推奨される。
Containing CaO lowers the dielectric constant and increases the temperature change rate of the dielectric constant. In particular, such 8rO, CaO
is easily mixed in from BaCO3, which is the starting material for BaTiO3, so 8rO and Ca are used as Ba003.
B
It is recommended to use a BaCO3 raw material of 9% or more, preferably 99.5% or more.

また、BaTiO3の出発原料の他の一つであるTiO
2としても、通常の98〜99%程度の純度のものを用
いることは可能であるが、好適には99%以上、より好
ましくは99,5%以上の純度のTiO2原料が有利に
用いられ得るのである。
In addition, TiO, which is another starting material for BaTiO3,
2, it is possible to use a TiO2 raw material with a purity of about 98 to 99%, but preferably a TiO2 raw material with a purity of 99% or more, more preferably 99.5% or more can be advantageously used. It is.

また、本発明に係る組成物を構成するCo2O3とNb
2O5は、何れも誘電率の温度変化率を平担化せしめる
成分であり、0o203は0.05〜0.5%、好まし
くは0.09〜0.4%;Nb2O5は0.5〜2%、
好ましくは0.9〜1.5%(いずれも重量基準)の割
合にて含有せしめられる必要がある。
In addition, Co2O3 and Nb constituting the composition according to the present invention
2O5 is a component that flattens the temperature change rate of dielectric constant, and 0o203 is 0.05 to 0.5%, preferably 0.09 to 0.4%; Nb2O5 is 0.5 to 2%. ,
Preferably, it needs to be contained in a proportion of 0.9 to 1.5% (both based on weight).

なお、C!o20.が、0.05%より少なくなると、
誘電率の温度変化率が大となり、0,5%より多くなる
と、誘電率が低くなる。また、Nb2O5が、0.5%
より少ないときには焼結不良の問題が惹起され、他方2
%より多いときには誘電率の温度変化率が大ぎくなる問
題を生じる0 更に、本発明の組成物中のCeO2は焼成温度を低下せ
しめる効果があるが、その割合が0.05%よりも少な
いと焼結不良となり、また0、5%よりも多くなると誘
電率の温度変化率が大となる。それ故、CeO2の割合
ハ、0.05〜0.5J[1%、好ましくは0.09〜
0.3重量%とする必要がある。
In addition, C! o20. is less than 0.05%,
When the temperature change rate of the dielectric constant becomes large and exceeds 0.5%, the dielectric constant becomes low. In addition, Nb2O5 is 0.5%
When the amount is less than 2, the problem of poor sintering occurs;
When the proportion is less than 0.05%, the problem arises that the temperature change rate of the dielectric constant becomes large.Furthermore, CeO2 in the composition of the present invention has the effect of lowering the firing temperature, but when the proportion is less than 0.05%, This will result in poor sintering, and if it exceeds 0.5%, the temperature change rate of the dielectric constant will increase. Therefore, the proportion of CeO2 is 0.05~0.5J [1%, preferably 0.09~
It needs to be 0.3% by weight.

更にまた、TiO2は、CeO2と同様に焼成温度の低
下に寄与するものであるが、その割合が多過ぎると誘電
率を低下せしめたり、誘電損失(tanδ )を大きく
するので、1.5重量%までの含有割合とする必要があ
り、なかでも0.2〜1,0重量%の割合で含有せしめ
ることにより、その有効な効果が発揮される。なお、こ
のTiO2量は、前記高純度のBaTiO3の形成に際
して過剰のTiO2をBaCO3と組み合わせることに
よって導入され得るものである他、必要な量のT + 
02を別途に組成物中に配合せしめることによっても導
入せしめられ得るものである。
Furthermore, like CeO2, TiO2 contributes to lowering the firing temperature, but if its proportion is too large, it lowers the dielectric constant and increases dielectric loss (tan δ), so 1.5% by weight is used. It is necessary to have a content ratio of 0.2 to 1.0% by weight, in particular, to exhibit its effective effect. Note that this amount of TiO2 can be introduced by combining excess TiO2 with BaCO3 when forming the high-purity BaTiO3, as well as a necessary amount of T +
It can also be introduced by separately incorporating 02 into the composition.

このように、本発明にあ、つては、所定割合のBaTi
O3、Co2 o3. Nb、205 、 CeO2,
TiO2にて磁器誘電体を構成すると共に、BaTiO
3から持ち込まれる5rO−)−CaO量を制御するこ
とによって、焼成品たる本発明に係る磁器誘電体に誘電
率等の優れた電気的特性を付与せしめ得たのである。
In this way, according to the present invention, a predetermined proportion of BaTi
O3, Co2 o3. Nb, 205, CeO2,
The porcelain dielectric is composed of TiO2, and BaTiO
By controlling the amount of 5rO-)-CaO brought in from No. 3, it was possible to impart excellent electrical properties such as dielectric constant to the fired ceramic dielectric material of the present invention.

以下に実施例を挙げ、本発明を更に具体的に明らかにす
るが、本発明がかかる実施例の記載によって何等の制約
をも受けるものでないことは言うまでもないところであ
る。なお、実施例中の部及び百分率はすべて重量基準で
示されている。
Examples will be given below to clarify the present invention in more detail, but it goes without saying that the present invention is not limited in any way by the description of the examples. Note that all parts and percentages in the examples are expressed on a weight basis.

実施例 第1表に示される配合割合となるように各成分原料をボ
ールミルにて均一に湿式混合せしめ、ついで900〜1
100°Cで3時間の間仮焼きして化学反応を行なわし
めた後、再びボールミルにて平均粒径が1ミクロン程度
になるまで粉砕した。
Examples The raw materials for each component were wet-mixed uniformly in a ball mill so that the proportions shown in Table 1 were obtained, and then 900 to 1
After calcining at 100°C for 3 hours to carry out a chemical reaction, the mixture was ground again in a ball mill until the average particle size was about 1 micron.

なお、高純度BaTiO3成分を形成するために、8r
OとCaOの合計含有量が種々異なる純度が99.0%
以上のB嶋C03と純度が99.9%のTiO2が用い
られ、他の成分と共に、前記ボールミルにて湿式混合せ
しめられた。
In addition, in order to form a high purity BaTiO3 component, 8r
Purity is 99.0% with various total contents of O and CaO
The above Bjima C03 and TiO2 with a purity of 99.9% were used and wet-mixed with other components in the ball mill.

ついで、この混合物を乾燥せしめた後、粘結剤としてポ
リビニルアルコールを適当量加え、約1トン/adめ圧
力にて成形し、直径t6m/ms厚さ0.5m/mの円
板状成形物を作製した。
Next, after drying this mixture, an appropriate amount of polyvinyl alcohol was added as a binder and molded at a pressure of about 1 ton/ad to form a disc-shaped molded product with a diameter of t6 m/ms and a thickness of 0.5 m/m. was created.

さらに、かくして得られた成形物に対して、約1350
〜1400°Cの温度で、8時間の本焼成操作を施した
後、得られた焼成物についてその両面に銀電極を焼き付
けることにより試料と為し、性を測定してその結果を第
2表に示した。
Furthermore, about 1350
After performing the main firing operation for 8 hours at a temperature of ~1400°C, the obtained fired product was used as a sample by baking silver electrodes on both sides, and the properties were measured and the results are shown in Table 2. It was shown to.

第1表及び第2表の結果より明らかなように、本発明に
従う組成の組成物、即ち各試料連中の(a)及び(b)
は、いずれも高い、3000以上の誘電率(ε)を有し
、且つ小誘電損失(tanδ)のものであると共に、誘
電率の温度に対する変化率の小さな特性をも具備してい
るのである。
As is clear from the results in Tables 1 and 2, the compositions according to the present invention, namely (a) and (b) of each sample series.
They all have a high dielectric constant (ε) of 3000 or more, a small dielectric loss (tan δ), and a small rate of change in dielectric constant with respect to temperature.

これに対して、BaTiO3,Co2O3、Nb2O6
、CeO2,TiO2の含量が同様であっても、SrO
+CaOの合計含量が0.5%を越える((C)及び(
d)の場合にあっては、本発明に従う(a)及び(b)
の場合に比して、誘電率(ε)が著しく劣ったものであ
った。
On the other hand, BaTiO3, Co2O3, Nb2O6
Even if the contents of , CeO2, and TiO2 are similar, SrO
+The total content of CaO exceeds 0.5% ((C) and (
In case d), (a) and (b) according to the invention
The dielectric constant (ε) was significantly inferior to that in the case of .

第   1   表 第   2   表 特開昭58− 15078 (4) (註> i (a)、 (b)、(C)、 (d)は、
それぞれBaTiO3中のSrOとOaOの合計含有量
が0.20%、0.50%、0.55%、0.75%の
ものである。
Table 1 Table 2 JP-A-58-15078 (4) (Note> i (a), (b), (C), (d) are
The total contents of SrO and OaO in BaTiO3 are 0.20%, 0.50%, 0.55%, and 0.75%, respectively.

Claims (1)

【特許請求の範囲】[Claims] 酸化ストロンチウムと酸化カルシウムの合計含有量が0
.5重量%以下である高純度のチタン酸バlJつA95
〜99重量%と、酸化コバルト0.05〜0.5重量%
と、酸化ニオブ0.5〜2重量%と、酸化セリウム0.
05〜0.5重量%と、酸化チタンの1.5重量%まで
とからなる高誘電率系磁器誘電体組成物。
Total content of strontium oxide and calcium oxide is 0
.. High purity titanate barium A95 with a content of 5% by weight or less
~99% by weight and 0.05-0.5% by weight of cobalt oxide
, 0.5 to 2% by weight of niobium oxide, and 0.5 to 2% by weight of niobium oxide.
A high dielectric constant ceramic dielectric composition comprising 0.05 to 0.5% by weight of titanium oxide and up to 1.5% by weight of titanium oxide.
JP56109592A 1981-07-14 1981-07-14 High dielectric constant ceramic dielectric composition Granted JPS5815078A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56109592A JPS5815078A (en) 1981-07-14 1981-07-14 High dielectric constant ceramic dielectric composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56109592A JPS5815078A (en) 1981-07-14 1981-07-14 High dielectric constant ceramic dielectric composition

Publications (2)

Publication Number Publication Date
JPS5815078A true JPS5815078A (en) 1983-01-28
JPS6351992B2 JPS6351992B2 (en) 1988-10-17

Family

ID=14514166

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JPS5815078A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4861736A (en) * 1986-08-11 1989-08-29 Tdk Corporation Semiconductive ceramic composition
US4882305A (en) * 1985-05-03 1989-11-21 Tam Ceramics, Inc. Dielectric ceramic composition with high dielectric constant and flat TC characteristics
US4939108A (en) * 1986-11-03 1990-07-03 Tam Ceramics, Inc. Process for producing dielectric ceramic composition with high dielectric constant, low dissipation factor and flat TC characteristics
US5250481A (en) * 1991-12-28 1993-10-05 Samsung Electro-Mechanics Co., Ltd. High dielectric ceramic composition
US5550092A (en) * 1995-02-10 1996-08-27 Tam Ceramics Inc. Ceramic dielectrics compositions

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4882305A (en) * 1985-05-03 1989-11-21 Tam Ceramics, Inc. Dielectric ceramic composition with high dielectric constant and flat TC characteristics
US4861736A (en) * 1986-08-11 1989-08-29 Tdk Corporation Semiconductive ceramic composition
US4939108A (en) * 1986-11-03 1990-07-03 Tam Ceramics, Inc. Process for producing dielectric ceramic composition with high dielectric constant, low dissipation factor and flat TC characteristics
US5250481A (en) * 1991-12-28 1993-10-05 Samsung Electro-Mechanics Co., Ltd. High dielectric ceramic composition
US5550092A (en) * 1995-02-10 1996-08-27 Tam Ceramics Inc. Ceramic dielectrics compositions

Also Published As

Publication number Publication date
JPS6351992B2 (en) 1988-10-17

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