KR19980046582A - High dielectric constant dielectric self composition - Google Patents
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Abstract
본 발명은 티탄산바륨(BaTiO3) 100mol%, 산화네오븀(Nb2O5) 1.2∼1.4mol%, 산화세슘(CeO2) 0.4∼0.5mol%, 산화코발트(Co2O3) 0.3∼0.4mol%, 산화망간(MnO2) 0.05∼0.1mol%, 산화규소(SiO2) 0∼0.5mol%, 산화구리(CuO) 0∼0.5mol%를 기본 구성물로 갖는 고유전율 유전체 자기조성물에 관한 것으로서, 상기 고유전율 유전체 자기조성물의 용량변화량이 -55∼125℃의 범위 내에서 -15∼15% 이내인 EIA(Electronic Industry Association)규격의 X7R 온도특성을 만족하고, 상온에서 안정한 온도특성을 갖으며, 적층 세라믹 콘덴서의 재료로 사용되는 고유전율 유전체 자기 조성물에 관한 것이다.The present invention is 100 mol% of barium titanate (BaTiO 3 ), 1.2 to 1.4 mol% of Nebium oxide (Nb 2 O 5 ), 0.4 to 0.5 mol% of Cesium Oxide (CeO 2 ), 0.3 to 0.4 of Cobalt Oxide (Co 2 O 3 ) A high-k dielectric dielectric composition having mol%, manganese oxide (MnO 2 ) 0.05 to 0.1 mol%, silicon oxide (SiO 2 ) 0 to 0.5 mol%, and copper oxide (CuO) 0 to 0.5 mol% as a basic component. The capacity change of the high-k dielectric self-composition is within -15-15% within the range of -55-125 ° C, which satisfies the X7R temperature characteristic of the EIA (Electronic Industry Association) standard, and has stable temperature characteristics at room temperature. And a high dielectric constant dielectric ceramic composition used as a material for a multilayer ceramic capacitor.
Description
본 발명은 고유전율 유전체 자기조성물에 관한 것으로서, 특히 적층 세라믹 콘덴서의 재료로 사용되는 고유전율 유전체 자기조성물에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to high-k dielectric self-compositions and, more particularly, to high-k dielectric self-compositions used as materials for multilayer ceramic capacitors.
일반적으로 고유전체 자기조성물이라 함은 -55∼125℃의 범위 내에서 용량변화량이 -15∼15% 이내인 EIA(Electronic Industry Association)규격의 X7R 온도특성을 만족하며 적층 세라믹 콘덴서의 재료로 이용되고 있다.In general, high-dielectric self-composition is used as a material for multilayer ceramic capacitors that satisfies the X7R temperature characteristic of the EIA (Electronic Industry Association) standard with a capacity change within -15 to 15% within a range of -55 to 125 ° C. have.
종래의 고유전율 유전체 자기 조성물은 티탄산 바륨(BaTiO3)과 산화네오븀(Nb2O3)을 주성분으로 하여 티탄산 칼슘(CaTiO3), 산화코발트(Co2O3), 산화니켈(NiO), 산화마그네슘(MgO), 산화비스무스(Bi2O3), 산화세슘(CeO2), 산화망간(MnO2), 산화아연(ZnO),등의 산화물이 첨가된 유전체가 사용되었다.Conventional high-k dielectric ceramic compositions are composed of barium titanate (BaTiO 3 ) and neodymium oxide (Nb 2 O 3 ) as main components, calcium titanate (CaTiO 3 ), cobalt oxide (Co 2 O 3 ), nickel oxide (NiO), Dielectrics added with oxides such as magnesium oxide (MgO), bismuth oxide (Bi 2 O 3 ), cesium oxide (CeO 2 ), manganese oxide (MnO 2 ), zinc oxide (ZnO), and the like were used.
그러나, 상기와 같이 조성된 종래의 유전체 자기 조성물중 산화비스무스(Bi2O3)를 포함한 조성물은 소결성 및 유전율의 온도안정성이 우수하지만, 고온에서 팔라듐전극과 반응하기 때문에 사용하는데 어려움이 많았고, 산화 코발트(Co2O3), 산화망간(MnO2), 산화세슘(CeO2)으로 구성된 조성물들은 상온에서 3000KHz 이상의 높은 유전율을 갖는 반면, 절연저항이 1011Ωcm정도로 낮고, 1,300℃ 이상의 높은 소결온도를 갖기 때문에 1300℃ 이하의 저온에서 우수한 전기적 특성을 얻어내기 힘든 문제점이 있었다.However, although the composition including bismuth oxide (Bi 2 O 3 ) in the conventional dielectric ceramic composition prepared as described above has excellent sinterability and temperature stability of dielectric constant, it is difficult to use because it reacts with a palladium electrode at high temperature, and oxidation Compositions composed of cobalt (Co 2 O 3 ), manganese oxide (MnO 2 ) and cesium oxide (CeO 2 ) have a high dielectric constant of more than 3000KHz at room temperature, while the insulation resistance is as low as 10 11 Ωcm and the high sintering temperature of more than 1,300 ℃ Since it has a problem that it is difficult to obtain excellent electrical properties at low temperature below 1300 ℃.
본 발명은 상기한 바와 같은 문제점을 해결하기 위하여 안출된 것으로서, 산화비스무스를 포함하지 않고, 절연저항이 1013Ωcm이상, 유전율이 3,300KHz 이상, 1,280℃ 이하의 온도에서 소결이 가능하며, -55∼125℃의 범위 내에서 용량변화량이 -15∼15%이내인 EIA(Electronic Industry Association)규격의 X7R 온도특성을 만족하는 유전체 분말을 제조함에 그 목적이 있다.The present invention has been made to solve the above problems, does not include bismuth oxide, the insulation resistance is 10 13 Ωcm or more, the dielectric constant is 3,300KHz or more, sintering is possible at a temperature of 1,280 ℃ or less, -55 It is an object of the present invention to manufacture a dielectric powder that satisfies the X7R temperature characteristic of the EIA (Electronic Industry Association) standard, in which the change in capacity is within a range of -15 to 15%.
본 발명은 티탄산바륨(BaTiO3) 100mol%, 산화네오븀(Nb2O5) 1.2∼1.4mol%, 산화세슘(CeO2) 0.4∼0.5mol%, 산화코발트(Co2O3) 0.3∼0.4mol%, 산화망간(MnO2) 0.05∼0.1mol%, 산화규소(SiO2) 0∼0.5mol%, 산화구리(CuO) 0∼0.5mol%로 조성된 고유전율 유전체 자기 조성물에 관한것이다.The present invention is 100 mol% of barium titanate (BaTiO 3 ), 1.2 to 1.4 mol% of Nebium oxide (Nb 2 O 5 ), 0.4 to 0.5 mol% of Cesium Oxide (CeO 2 ), 0.3 to 0.4 of Cobalt Oxide (Co 2 O 3 ) The present invention relates to a high-k dielectric ceramic composition composed of mol%, manganese oxide (MnO 2 ) 0.05 to 0.1 mol%, silicon oxide (SiO 2 ) 0 to 0.5 mol%, and copper oxide (CuO) 0 to 0.5 mol%.
산화네오븀(Nb2O5)은 결정립의 성장을 제한하여 미세한 결정립을 갖게 하고, 산화세슘(CeO2)은 액상을 형성하여 치밀한 조직을 갖게하며, 산화코발트(Co2O3)와 산화망간(MnO2)은 소량이 첨가되어 온도특성, 절연저항 등의 전기적 특성을 변화시키고, 산화규소(SiO2)와 산화구리(CuO)는 소결온도를 낮추는 역할을 한다.Nebium oxide (Nb 2 O 5 ) has a fine grain by limiting the growth of grains, cesium oxide (CeO 2 ) forms a liquid phase to have a dense structure, cobalt oxide (Co 2 O 3 ) and manganese oxide A small amount of (MnO 2 ) is added to change electrical characteristics such as temperature characteristics and insulation resistance, and silicon oxide (SiO 2 ) and copper oxide (CuO) lower the sintering temperature.
표 1을 참조하여 본 발명의 실시예를 설명하면 다음과 같다. 티탄산바륨(BaTiO3) 100mol%, 산화네오븀(Nb2O5) 1.2∼1.4mol%, 산화세슘(CeO2) 0.4∼0.5mol%, 산화코발트(Co2O3) 0.3∼0.4mol%, 산화망간(MnO2) 0.05∼0.1mol%, 산화규소(SiO2) 0∼0.5mol%, 산화구리(CuO) 0∼0.5mol%를 각각의 범위 내에서 적절하게 혼합시킨후, 100℃에서 건조시킨다. 그리고 건조된 혼합분말을 압력을 가하여 성형한 후 소결하여, 은전극으로 도포하여 소부하고 시편의 유전율, 유전손실, 절연저항, 유전율의 온도특성(TCC%)을 측정한 결과, 유전율는 25℃에서 3,300∼3,800Khz, 유전손실은 25℃에서 0.7∼1.1%, 절연저항은 1.0×1013∼4.1×1013Ωcm, 유전율의 온도특성(TCC)은 -55℃에서 -5∼3%, 125℃에서 -11∼2%인 특성을 나타냈다.Referring to Table 1, an embodiment of the present invention will be described. 100 mol% of barium titanate (BaTiO 3 ), 1.2 to 1.4 mol% of neobium oxide (Nb 2 O 5 ), 0.4 to 0.5 mol% of cesium oxide (CeO 2 ), 0.3 to 0.4 mol% of cobalt oxide (Co 2 O 3 ), 0.05 to 0.1 mol% of manganese oxide (MnO 2 ), 0 to 0.5 mol% of silicon oxide (SiO 2 ), and 0 to 0.5 mol% of copper oxide (CuO) are appropriately mixed within the respective ranges, and then dried at 100 ° C. Let's do it. The dried mixed powder was molded by applying pressure, followed by sintering and baking by silver electrode. The dielectric constant, dielectric loss, insulation resistance and temperature characteristics (TCC%) of the dielectric constant of the specimen were measured, and the dielectric constant was 3,300 at 25 ° C. Dielectric loss of 0.7 ~ 1.1% at 25 ℃, insulation resistance of 1.0 × 10 13 to 4.1 × 10 13 Ωcm, dielectric constant temperature characteristic (TCC) of -55 ℃ to -5 ~ 3%, 125 ℃ The characteristic was -11 to 2%.
[실시예1]Example 1
티탄산바륨(BaTiO3) 100mol%, 산화네오븀(Nb2O5) 1.4mol%, 산화세슘(CeO2) 0.4mol%, 산화코발트(Co2O3) 0.3mol%, 산화망간(MnO2) 0.1mol%, 산화규소(SiO2) 0.5mol%, 산화구리(CuO) 0mol%를 구성 성분으로 갖는 고유전율 유전체 자기조성물을 소결온도 1,280℃에서 상기의 방법으로 제조한 결과, 유전율은 25℃에서 3,490KHz, 유전손실은 25℃에서 0.8%, 절연저항은 1.0×1013Ωcm, 유전율의 온도 특성(TCC)은 -55℃와 125℃에서 각각 -1%와 -8%인 특성을 나타냈다.Barium titanate (BaTiO 3 ) 100 mol%, Nebium oxide (Nb 2 O 5 ) 1.4mol%, Cesium oxide (CeO 2 ) 0.4mol%, Cobalt oxide (Co 2 O 3 ) 0.3mol%, Manganese oxide (MnO 2 ) A high dielectric constant dielectric ceramic composition containing 0.1 mol%, silicon oxide (SiO 2 ) 0.5 mol% and copper oxide (CuO) 0 mol% as a constituent was produced by the above method at the sintering temperature of 1,280 ° C., and the dielectric constant was 25 ° C. The dielectric loss was 0.8% at 25 ℃, the insulation resistance was 1.0 × 10 13 Ωcm, and the temperature characteristic (TCC) of the dielectric constant was -1% and -8% at -55 ℃ and 125 ℃, respectively.
[실시예 2]Example 2
티탄산바륨(BaTiO3) 100mol%, 산화네오븀(Nb2O5) 1.4mol%, 산화세슘(CeO2) 0.5mol%, 산화코발트(Co2O3) 0.3mol%, 산화망간(MnO2) 0.05mol%, 산화규소(SiO2) 0.4mol%, 산화구리(CuO) 0.1mol%를 구성 성분으로 갖는 고유전율 유전체 자기조성물을 소결온도 1,260℃에서 상기의 방법으로 제조한 결과, 유전율은 25℃에서 3,300KHz, 유전손실은 25℃에서 0.7%, 절연저항은 1.2×1013Ωcm, 유전율의 온도 특성(TCC)은 -55℃와 125℃에서 각각 -3%와 -5%인 특성을 나타냈다.Barium titanate (BaTiO 3 ) 100 mol%, Nebium oxide (Nb 2 O 5 ) 1.4mol%, Cesium oxide (CeO 2 ) 0.5mol%, Cobalt oxide (Co 2 O 3 ) 0.3mol%, Manganese oxide (MnO 2 ) A dielectric constant of 0.05 mol%, 0.4 mol% of silicon oxide (SiO 2 ) and 0.1 mol% of copper oxide (CuO) as a component was produced by the above method at the sintering temperature of 1,260 ° C., and the dielectric constant was 25 ° C. At 3300KHz, dielectric loss is 0.7% at 25 ℃, insulation resistance is 1.2 × 10 13 Ωcm, and the temperature characteristic of dielectric constant (TCC) is -3% and -5% at -55 ℃ and 125 ℃, respectively.
[실시예 3]Example 3
티탄산바륨(BaTiO3) 100mol%, 산화네오븀(Nb2O5) 1.4mol%, 산화세슘(CeO2) 0.5mol%, 산화코발트(Co2O3) 0.3mol%, 산화망간(MnO2) 0.05mol%, 산화규소(SiO2) 0mol%, 산화구리(CuO) 0.5mol%를 구성 성분으로 갖는 고유전율 유전체 자기조성물을 소결온도 1,250℃에서 상기의 방법으로 제조한 결과, 유전율은 25℃에서 3,400KHz, 유전손실은 25℃에서 0.8%, 절연저항은 4.1×1013Ωcm, 유전율의 온도 특성(TCC)은 -55℃와 125℃에서 각각 3%와 -10%인 특성을 나타냈다.Barium titanate (BaTiO 3 ) 100 mol%, Nebium oxide (Nb 2 O 5 ) 1.4mol%, Cesium oxide (CeO 2 ) 0.5mol%, Cobalt oxide (Co 2 O 3 ) 0.3mol%, Manganese oxide (MnO 2 ) A dielectric constant of 0.05 mol%, silicon oxide (SiO 2 ) 0 mol%, and copper oxide (CuO) 0.5 mol% was prepared by the above method at the sintering temperature of 1,250 ° C., and the dielectric constant was 25 ° C. The dielectric loss was 0.8% at 25 ° C, insulation resistance was 4.1 × 10 13 Ωcm, and the temperature characteristic of dielectric constant (TCC) was 3% and -10% at -55 ° C and 125 ° C, respectively.
[실시예 4]Example 4
티탄산바륨(BaTiO3) 100mol%, 산화네오븀(Nb2O5) 1.3mol%, 산화세슘(CeO2) 0.4mol%, 산화코발트(Co2O3) 0.3mol%, 산화망간(MnO2) 0.1mol%, 산화규소(SiO2) 0.3mol%, 산화구리(CuO) 0.2mol%를 구성 성분으로 갖는 고유전율 유전체 자기조성물을 소결온도 1,260℃에서 상기의 방법으로 제조한 결과, 유전율은 25℃에서 3,800KHz, 유전손실은 25℃에서 1.0%, 절연저항은 1.5×1013Ωcm, 유전율의 온도 특성(TCC)은 -55℃와 125℃에서 각각 5%와 -11%인 특성을 나타냈다.Barium titanate (BaTiO 3 ) 100 mol%, Nebium oxide (Nb 2 O 5 ) 1.3mol%, Cesium oxide (CeO 2 ) 0.4mol%, Cobalt oxide (Co 2 O 3 ) 0.3mol%, Manganese oxide (MnO 2 ) The dielectric constant of 0.1 mol%, 0.3 mol% of silicon oxide (SiO 2 ) and 0.2 mol% of copper oxide (CuO) as a component was produced by the above method at the sintering temperature of 1,260 ° C., and the dielectric constant was 25 ° C. At 3,800KHz, dielectric loss is 1.0% at 25 ℃, insulation resistance is 1.5 × 10 13 Ωcm, and the temperature characteristic of dielectric constant (TCC) is 5% and -11% at -55 ℃ and 125 ℃, respectively.
[실시예 5]Example 5
티탄산바륨(BaTiO3) 100mol%, 산화네오븀(Nb2O5) 1.3mol%, 산화세슘(CeO2) 0.4mol%, 산화코발트(Co2O3) 0.3mol%, 산화망간(MnO2) 0.1mol%, 산화규소(SiO2) 0mol%, 산화구리(CuO) 0.5mol%를 구성 성분으로 갖는 고유전율 유전체 자기조성물을 소결온도 1,240℃에서 상기의 방법으로 제조한 결과, 유전율은 25℃에서 3,630KHz, 유전손실은 25℃에서 0.9%, 절연저항은 2.3×1013Ωcm, 유전율의 온도 특성(TCC)은 -55℃와 125℃에서 각각 2%와 -5%인 특성을 나타냈다.Barium titanate (BaTiO 3 ) 100 mol%, Nebium oxide (Nb 2 O 5 ) 1.3mol%, Cesium oxide (CeO 2 ) 0.4mol%, Cobalt oxide (Co 2 O 3 ) 0.3mol%, Manganese oxide (MnO 2 ) A high dielectric constant dielectric ceramic composition containing 0.1 mol%, silicon oxide (SiO 2 ) 0 mol%, and copper oxide (CuO) 0.5 mol% as a component was prepared by the above method at the sintering temperature of 1,240 ° C., and the dielectric constant was 25 ° C. The dielectric loss was 0.9% at 25 ℃, the insulation resistance was 2.3 × 10 13 Ωcm, and the dielectric constant temperature characteristic (TCC) was 2% and -5% at -55 ℃ and 125 ℃, respectively.
[실시예 6]Example 6
티탄산바륨(BaTiO3) 100mol%, 산화네오븀(Nb2O5) 1.2mol%, 산화세슘(CeO2) 0.4mol%, 산화코발트(Co2O3) 0.4mol%, 산화망간(MnO2) 0.1mol%, 산화규소(SiO2) 0.25mol%, 산화구리(CuO) 0.25mol%를 구성 성분으로 갖는 고유전율 유전체 자기조성물을 소결온도 1,260℃에서 상기의 방법으로 제조한 결과, 유전율은 25℃에서 3,760KHz, 유전손실은 25℃에서 1.1%, 절연저항은 1.0×1013Ωcm, 유전율의 온도 특성(TCC)은 -55℃와 125℃에서 각각 -5%와 2%인 특성을 나타냈다.Barium titanate (BaTiO 3 ) 100 mol%, Nebium oxide (Nb 2 O 5 ) 1.2mol%, Cesium oxide (CeO 2 ) 0.4mol%, Cobalt oxide (Co 2 O 3 ) 0.4mol%, Manganese oxide (MnO 2 ) The dielectric constant of 25 mol% of silicon oxide (SiO 2 ), 0.25 mol% of silicon oxide (CuO) and 0.25 mol% of copper oxide (CuO) was prepared by the above method at the sintering temperature of 1,260 ° C. At 3760KHz, dielectric loss was 1.1% at 25 ℃, insulation resistance was 1.0 × 10 13 Ωcm, and the temperature characteristic (TCC) of dielectric constant was -5% and 2% at -55 ℃ and 125 ℃, respectively.
[표 1]TABLE 1
본 발명에 의한 상기 고유전율 유전체 자기조성물은 3,300KHz 이상의 고유전율을 갖고, 1013Ωcm이상의 절연저항과, 1,300℃ 이하의 소결온도를 갖고 있으며, 용량변화량이 -55∼125℃의 범위 내에서 -15∼15% 이내인 EIA(Electronic Industry Association)규격의 X7R 온도특성을 만족하므로 고신뢰성의 적층 세라믹 콘덴서의 제조를 가능하게 하는 효과가 있다.The high dielectric constant dielectric ceramic composition according to the present invention has a high dielectric constant of 3,300 KHz or more, an insulation resistance of 10 13 Ωcm or more, and a sintering temperature of 1,300 ° C. or less, and a capacity change amount within a range of -55 to 125 ° C. It satisfies the X7R temperature characteristic of the EIA (Electronic Industry Association) standard within 15 to 15%, which makes it possible to manufacture a highly reliable multilayer ceramic capacitor.
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| KR1019960064941A KR19980046582A (en) | 1996-12-12 | 1996-12-12 | High dielectric constant dielectric self composition |
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| Publication Number | Publication Date |
|---|---|
| KR19980046582A true KR19980046582A (en) | 1998-09-15 |
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| Application Number | Title | Priority Date | Filing Date |
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| KR1019960064941A KR19980046582A (en) | 1996-12-12 | 1996-12-12 | High dielectric constant dielectric self composition |
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| KR (1) | KR19980046582A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100313324B1 (en) * | 1999-11-01 | 2001-11-09 | 박호군 | Low temperature firable dielectric ceramic compositions having ultrafine grains |
| KR100890144B1 (en) * | 2005-06-21 | 2009-03-20 | 이 아이 듀폰 디 네모아 앤드 캄파니 | Acceptor Doped Barium Titanate Based Thin Film Capacitors on Metal Foils and Methods of Making thereof |
| KR100930184B1 (en) * | 2007-11-29 | 2009-12-07 | 삼성전기주식회사 | Dielectric Composition and Multilayer Ceramic Capacitor Embedded Low Temperature Simultaneous Ceramic Substrate Using the Same |
-
1996
- 1996-12-12 KR KR1019960064941A patent/KR19980046582A/en not_active Application Discontinuation
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100313324B1 (en) * | 1999-11-01 | 2001-11-09 | 박호군 | Low temperature firable dielectric ceramic compositions having ultrafine grains |
| KR100890144B1 (en) * | 2005-06-21 | 2009-03-20 | 이 아이 듀폰 디 네모아 앤드 캄파니 | Acceptor Doped Barium Titanate Based Thin Film Capacitors on Metal Foils and Methods of Making thereof |
| KR100930184B1 (en) * | 2007-11-29 | 2009-12-07 | 삼성전기주식회사 | Dielectric Composition and Multilayer Ceramic Capacitor Embedded Low Temperature Simultaneous Ceramic Substrate Using the Same |
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