KR100246243B1 - Dielectric ceramic composition for mlcc - Google Patents
Dielectric ceramic composition for mlcc Download PDFInfo
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- KR100246243B1 KR100246243B1 KR1019970080175A KR19970080175A KR100246243B1 KR 100246243 B1 KR100246243 B1 KR 100246243B1 KR 1019970080175 A KR1019970080175 A KR 1019970080175A KR 19970080175 A KR19970080175 A KR 19970080175A KR 100246243 B1 KR100246243 B1 KR 100246243B1
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- 239000000203 mixture Substances 0.000 title claims abstract description 24
- 239000000919 ceramic Substances 0.000 title claims abstract description 6
- 238000009413 insulation Methods 0.000 abstract description 13
- 238000005245 sintering Methods 0.000 abstract description 12
- 239000003985 ceramic capacitor Substances 0.000 abstract description 3
- 229910000480 nickel oxide Inorganic materials 0.000 description 9
- 238000000034 method Methods 0.000 description 7
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 4
- 239000000395 magnesium oxide Substances 0.000 description 4
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 4
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 4
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 229910000416 bismuth oxide Inorganic materials 0.000 description 3
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 3
- GHPGOEFPKIHBNM-UHFFFAOYSA-N antimony(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Sb+3].[Sb+3] GHPGOEFPKIHBNM-UHFFFAOYSA-N 0.000 description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- UBEWDCMIDFGDOO-UHFFFAOYSA-N cobalt(2+);cobalt(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[Co+2].[Co+3].[Co+3] UBEWDCMIDFGDOO-UHFFFAOYSA-N 0.000 description 2
- 239000011812 mixed powder Substances 0.000 description 2
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 2
- 229910020599 Co 3 O 4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- WEUCVIBPSSMHJG-UHFFFAOYSA-N calcium titanate Chemical compound [O-2].[O-2].[O-2].[Ca+2].[Ti+4] WEUCVIBPSSMHJG-UHFFFAOYSA-N 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- KAGOZRSGIYZEKW-UHFFFAOYSA-N cobalt(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Co+3].[Co+3] KAGOZRSGIYZEKW-UHFFFAOYSA-N 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
- H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
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- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
본 발명은 100BaTiO3+aNb2O5+bNiO+ cCo3O4+dMnO2+ eSb2O3+ fZnO (1.00≤a≤1.30mol%, 0.10≤b≤0.30mol%, 0.10≤c≤0.30mol%, 0.05≤d≤0.10mol%, 0.0≤e≤0.10mol%, 0.01≤f≤0.20mol%)로 조성된 유전체 자기 조성물에 관한 것으로서, 유전율이 3700이상이며, 1240℃의 비교적 낮은 온도에서 소결이 가능하고 절연저항1013Ωcm이므로, X7R 온도특성을 만족하는 적층세라믹 커패시터등에 적용될 수 있는 자기 조성물에 관한 것이다.100 BaTiO 3 + aNb 2 O 5 + bNiO + cCo 3 O 4 + dMnO 2 + eSb 2 O 3 + fZnO (1.00≤a≤1.30mol%, 0.10≤b≤0.30mol%, 0.10≤c≤0.30mol% , 0.05≤d≤0.10mol%, 0.0≤e≤0.10mol%, 0.01≤f≤0.20mol%), the dielectric ceramic composition having a dielectric constant of 3700 or more and sintering at a relatively low temperature of 1240 ℃ Since the insulation resistance is 10 13 Ωcm, the present invention relates to a magnetic composition that can be applied to a multilayer ceramic capacitor that satisfies the X7R temperature characteristic.
Description
본 발명은 티탄산바륨(BaTiO3)을 주성분으로 하는 자기 조성물에 관한 것으로, 특히 유전율이 3700이상이고, EIA(Electronic Industry Association)규격의 X7R 온도 특성을 만족하는 동시에 1240℃의 온도에서 소결이 가능하며 1013Ωcm의 절연저항을 가져, 세라믹 커패시퍼(Ceramic Capacitor)와 같은 각종 부품에 적용할 수 있는 유전체 자기조성물에 관한 것이다.The present invention relates to a magnetic composition containing barium titanate (BaTiO 3 ) as a main component, in particular, having a dielectric constant of 3700 or more, satisfying the X7R temperature characteristic of the EIA (Electronic Industry Association) standard, and sintering at a temperature of 1240 ° C is possible. The present invention relates to a dielectric magnetic composition having an insulation resistance of 10 13 Ωcm and applicable to various components such as ceramic capacitors.
종래의 X7R을 만족하는 유전체 자기조성물은 (BaTiO3+Nb2O5)을 기본물질로 하여 티탄산칼슘(CaTiO3), 산화코발트(CoO), 산화마그네슘(MgO), 산화비스무스(Bi2O3), 산화니켈(NiO), 산화주석(MnO2), 산화아연(ZnO) 같은 전이금속산화물, 회토류산화물 등의 세라믹 부성분이 치환되거나 첨가되어 조성되었다. 그러나 상기의 조성물중 산화비스무스(Bi2O3)를 포함한 조성물은 소결성 및 유전율의 온도안전성은 우수하지만, 고온에서 팔라듐(Pd)전극과 반응한다는 문제점을 안고 있다. 또한 부성분으로 산화마그네슘(MgO) 및 산화니켈(NiO)이 첨가된 조성물(일본 특허 공보 소61-99207호)과 산화코발트(Co2O3), 산화망간(MnO2), 산화셀륨(CeO2)이 첨가된 조성물(일본 특허 공보 소62-22905호)은 유전율이 3000이상으로 높은 반면, 절연저항이 1011Ωcm정도로 낮고 유전율의 온도특성(TCC) 또한 조성에 따라 불규칙적으로 변하가 때문에 안정하지 못하며, 소결온도도 1300℃이상으로 비교적 높다. 이는 넓은 온도범위에서 안정된 온도특성이 요구되는 유전체 특성에 부적합한 것으며 특히 -55℃ ~ +125℃의 온도범위내에서는 ±15%이하의 용량변화량을 갖도록 규정되어진 EIA(Electronic Industry Association)규격의 X7R온도특성을 만족하는 자기조성물로 적용되어지기에 문제점이 있다.Conventional dielectric self-composition of X7R is based on (BaTiO 3 + Nb 2 O 5 ) as a base material calcium titanate (CaTiO 3 ), cobalt oxide (CoO), magnesium oxide (MgO), bismuth oxide (Bi 2 O 3 ), Ceramic subcomponents such as transition metal oxides such as nickel oxide (NiO), tin oxide (MnO 2 ), zinc oxide (ZnO), and rare earth oxides were substituted or added. However, although the composition including bismuth oxide (Bi 2 O 3 ) in the composition has excellent temperature stability of sinterability and dielectric constant, it has a problem of reacting with a palladium (Pd) electrode at high temperature. In addition, a composition containing magnesium oxide (MgO) and nickel oxide (NiO) as a secondary component (Japanese Patent Publication No. 61-99207), cobalt oxide (Co 2 O 3 ), manganese oxide (MnO 2 ), and cerium oxide (CeO 2) ) (Japanese Patent Publication No. 62-22905) has a high dielectric constant of 3000 or more, while its insulation resistance is as low as 10 11 Ωcm and its temperature characteristic (TCC) is also unstable depending on the composition. The sintering temperature is relatively high, above 1300 ℃. This is unsuitable for dielectric properties that require stable temperature characteristics over a wide temperature range, especially the X7R of the EIA (Electronic Industry Association) standard, which has a capacity change of ± 15% or less within the temperature range of -55 ° C to + 125 ° C. There is a problem in that it is applied to a magnetic composition that satisfies the temperature characteristics.
상기와 같은 문제점을 해결하기 위해 본 발명은 산화비스무스(Bi2O3)를 포함하지 않으며, 유전율이 3700이상이고 절연저항이 1013Ωcm인 동시에 1240℃의 온도에서 소결가능한 X7R온도특성을 만족하는 유전체 자기조성물을 제공하는데 그 목적이 있다.In order to solve the above problems, the present invention does not include bismuth oxide (Bi 2 O 3 ), and has a dielectric constant of 3700 or more and an insulation resistance of 10 13 Ωcm and satisfying the X7R temperature characteristic that can be sintered at a temperature of 1240 ° C. Its purpose is to provide a dielectric self-composition.
상기의 목적을 실현하기 위한 본 발명의 유전체 자기조성물은 100BaTiO3+aNb2O5+bNiO+ cCo3O4+dMnO2+ eSb2O3+ fZnO (1.00≤a≤1.30mol%, 0.10≤b≤0.30mol%, 0.10≤c≤0.30mol%, 0.05≤d≤0.10mol%, 0.0≤e≤0.10mol%, 0.01≤f≤0.20mol%)로 조성된 것을 특징으로 한다.The dielectric ceramic composition of the present invention for achieving the above object is 100 BaTiO 3 + aNb 2 O 5 + bNiO + cCo 3 O 4 + dMnO 2 + eSb 2 O 3 + fZnO (1.00≤a≤1.30mol%, 0.10≤b≤ 0.30 mol%, 0.10 ≦ c ≦ 0.30 mol%, 0.05 ≦ d ≦ 0.10 mol%, 0.0 ≦ e ≦ 0.10 mol%, 0.01 ≦ f ≦ 0.20 mol%).
상기에서 산화니오븀(Nb2O5)은 결정립의 성장을 제한하여 미세한 결정립을 가지도록 하며, 산화니켈(NiO)과 산화코발트(Co3O4) 및 산화망간(MnO2)은 소량 첨가되어 온도특성, 절연저항 등의 전기특성을 변화시키며, 산화안티모니(Sb2O3)와 산화아연(ZnO)은 소결온도를 낮추는 소결조제의 역할을 한다.In the above niobium oxide (Nb 2 O 5 ) is limited to the growth of the crystal grains to have a fine grain, nickel oxide (NiO), cobalt oxide (Co 3 O 4 ) and manganese oxide (MnO 2 ) is added a small amount of temperature It changes the electrical properties such as properties, insulation resistance, and antimony oxide (Sb 2 O 3 ) and zinc oxide (ZnO) serves as a sintering aid to lower the sintering temperature.
본 발명을 실현하는 실시예를 자세히 설명하면 다음과 같다.An embodiment of realizing the present invention will be described in detail as follows.
티탄산바륨(BaTiO3)에 산화니오븀(Nb2O5), 산화니켈(NiO), 산화코발트(Co3O4), 산화망간(MnO2), 산화안티모니(Sb2O3)와 산화아연(ZnO)을 상기의 중량비의 범위내에서 평량하여 혼합시킨 후 100℃에서 건조시켜 혼합분말을 만든다. 그 후 상기의 건조된 혼합분말에 압력을 가하여 성형시킨 다음 소결하여 은(Ag)전극으로 도포하고 전극을 소부하였다. 그 후, 본 발명이 속하는 기술분야에서 통상적으로 사용되는 방법으로 전극이 부착된 시편의 유전율, 유전손실, 유전율의 온도특성, 절연저항을 측정하여 다음과 같은 결과를 얻었다.Barium titanate (BaTiO 3 ) to niobium oxide (Nb 2 O 5 ), nickel oxide (NiO), cobalt oxide (Co 3 O 4 ), manganese oxide (MnO 2 ), antimony oxide (Sb 2 O 3 ) and zinc oxide (ZnO) is mixed in a basis weight within the above weight ratio, followed by drying at 100 DEG C to form a mixed powder. Then, the dried mixed powder was molded by applying pressure, sintered, coated with silver (Ag) electrodes, and baked. Then, the dielectric constant, dielectric loss, temperature characteristic of the dielectric constant and insulation resistance of the specimen attached to the electrode by a method commonly used in the art to which the present invention belongs to obtain the following results.
<실시예 1><Example 1>
100BaTiO3+aNb2O5+bNiO+ cCo3O4+dMnO2+ eSb2O3+ fZnO (a=1.00mol%, b=0.10mol%, c=0.10mol%, d=0.05mol%, e=0.10mol%, f=0.10mol%)로 조성된 유전체 조성물을 가지도록 소결온도 1240℃에서 상기의 방법으로 제조한 결과, 유전율은 25℃에서 1KHz를 걸어주었을 때 4000, 유전손실은 25℃에서 1KHz를 걸어주었을 때 1.0, 절연저항은 1 × 1013Ωcm이며, 유전율의 온도특성(TCC)은 -55℃에서 -5%, +125℃에서 -12%였다.100 BaTiO 3 + aNb 2 O 5 + bNiO + cCo 3 O 4 + dMnO 2 + eSb 2 O 3 + fZnO (a = 1.00 mol%, b = 0.10 mol%, c = 0.10 mol%, d = 0.05 mol%, e = 0.10mol%, f = 0.10mol%) was produced by the above method at the sintering temperature 1240 ℃ to have a dielectric composition composed of), the dielectric constant is 4000 when 1KHz at 25 ℃, dielectric loss is 1KHz at 25 ℃ When 1.0 was applied, the insulation resistance was 1 × 10 13 Ωcm, and the temperature characteristic (TCC) of the dielectric constant was -5% at -55 ° C and -12% at + 125 ° C.
<실시예 2><Example 2>
100BaTiO3+aNb2O5+bNiO+ cCo3O4+dMnO2+ eSb2O3+ fZnO (a=1.20mol%, b=0.10mol%, c=0.10mol%, d=0.05mol%, e=0.10mol%, f=0.10mol%)로 조성된 유전체 조성물을 가지도록 소결온도 1240℃에서 상기의 방법으로 제조한 결과, 유전율은 25℃에서 1KHz를 걸어주었을 때 4230, 유전손실은 25℃에서 1KHz를 걸어주었을 때 1.2, 절연저항은 1 × 1013Ωcm이며, 유전율의 온도특성(TCC)은 -55℃에서 -5%, +125℃에서 -10%였다.100 BaTiO 3 + aNb 2 O 5 + bNiO + cCo 3 O 4 + dMnO 2 + eSb 2 O 3 + fZnO (a = 1.20 mol%, b = 0.10 mol%, c = 0.10 mol%, d = 0.05 mol%, e = 0.10mol%, f = 0.10mol%) was prepared by the above method at the sintering temperature 1240 ℃ to have a dielectric composition composed of 4230, dielectric loss is 1230 Hz at 25 ℃ 1KHz 1.2, the insulation resistance was 1 × 10 13 Ωcm, and the dielectric constant temperature characteristic (TCC) was -5% at -55 ° C and -10% at + 125 ° C.
<실시예 3><Example 3>
100BaTiO3+aNb2O5+bNiO+ cCo3O4+dMnO2+ eSb2O3+ fZnO (a=1.20mol%, b=0.20mol%, c=0.20mol%, d=0.05mol%, e=0.10mol%, f=0.10mol%)로 조성된 유전체 조성물을 가지도록 소결온도 1240℃에서 상기의 방법으로 제조한 결과, 유전율은 25℃에서 1KHz를 걸어주었을 때 4000, 유전손실은 25℃에서 1KHz를 걸어주었을 때 1.0, 절연저항은 1 × 1013Ωcm이며, 유전율의 온도특성(TCC)은 -55℃에서 +1%, +125℃에서 -11%였다.100 BaTiO 3 + aNb 2 O 5 + bNiO + cCo 3 O 4 + dMnO 2 + eSb 2 O 3 + fZnO (a = 1.20 mol%, b = 0.20 mol%, c = 0.20 mol%, d = 0.05 mol%, e = 0.10mol%, f = 0.10mol%) was produced by the above method at the sintering temperature 1240 ℃ to have a dielectric composition composed of), the dielectric constant is 4000 when 1KHz at 25 ℃, dielectric loss is 1KHz at 25 ℃ When 1.0 was applied, the insulation resistance was 1 × 10 13 Ωcm, and the temperature characteristic (TCC) of the dielectric constant was -1% at -55 ° C and -11% at + 125 ° C.
<실시예 4><Example 4>
100BaTiO3+aNb2O5+bNiO + cCo3O4+dMnO2+ eSb2O3+ fZnO (a=1.30mol%, b=0.10mol%, c=0.30mol%, d=0.10mol%, e=0.10mol%, f=0.10mol%)로 조성된 유전체 조성물을 가지도록 소결온도 1240℃에서 상기의 방법으로 제조한 결과, 유전율은 25℃에서 1KHz를 걸어주었을 때 3750, 유전손실은 25℃에서 1KHz를 걸어주었을 때 0.8, 절연저항은 1 × 1013Ωcm이며, 유전율의 온도특성(TCC)은 -55℃에서 +5%, +125℃에서 -10%였다.100 BaTiO 3 + aNb 2 O 5 + bNiO + cCo 3 O 4 + dMnO 2 + eSb 2 O 3 + fZnO (a = 1.30 mol%, b = 0.10 mol%, c = 0.30 mol%, d = 0.10 mol%, e = 0.10 mol%, f = 0.10 mol%). The dielectric composition was prepared by the above method at the sintering temperature of 1240 ° C., and the dielectric constant was 3750 when the 1 KHz was applied at 25 ° C., and the dielectric loss was 25 ° C. At 1 KHz, 0.8 and insulation resistance were 1 × 10 13 Ωcm, and the dielectric constant (TCC) was + 5% at -55 ° C and -10% at + 125 ° C.
<실시예 5>Example 5
100BaTiO3+aNb2O5+bNiO+ cCo3O4+dMnO2+ eSb2O3+ fZnO (a=1.30mol%, b=0.20mol%, c=0.20mol%, d=0.10mol%, e=0.10mol%, f=0.10mol%)로 조성된 유전체 조성물을 가지도록 소결온도 1240℃에서 상기의 방법으로 제조한 결과, 유전율은 25℃에서 1KHz를 걸어주었을 때 3800, 유전손실은 25℃에서 1KHz를 걸어주었을 때 0.8, 절연저항은 1 × 1013Ωcm이며, 유전율의 온도특성(TCC)은 -55℃에서 -3%, +125℃에서 -2%였다.100 BaTiO 3 + aNb 2 O 5 + bNiO + cCo 3 O 4 + dMnO 2 + eSb 2 O 3 + fZnO (a = 1.30 mol%, b = 0.20 mol%, c = 0.20 mol%, d = 0.10 mol%, e = 0.10mol%, f = 0.10mol%) was prepared by the above method at the sintering temperature of 1240 ℃ to have a dielectric composition composed of 3, when the dielectric constant is 1800 at 25 ℃, dielectric loss is 1KHz at 25 ℃ 0.8, insulation resistance was 1 × 10 13 Ωcm, and the dielectric constant (TCC) was -3% at -55 ° C and -2% at + 125 ° C.
<실시예 6><Example 6>
100BaTiO3+aNb2O5+bNiO+ cCo3O4+dMnO2+ eSb2O3+ fZnO (a=1.30mol%, b=0.30mol%, c=0.10mol%, d=0.10mol%, e=0.10mol%, f=0.10mol%)로 조성된 유전체 조성물을 가지도록 소결온도 1240℃에서 상기의 방법으로 제조한 결과, 유전율은 25℃에서 1KHz를 걸어주었을 때 4000, 유전손실은 25℃에서 1KHz를 걸어주었을 때 0.9, 절연저항은 1 × 1013Ωcm이며, 유전율의 온도특성(TCC)은 -55℃에서 -6%, +125℃에서 -7%였다.100 BaTiO 3 + aNb 2 O 5 + bNiO + cCo 3 O 4 + dMnO 2 + eSb 2 O 3 + fZnO (a = 1.30 mol%, b = 0.30 mol%, c = 0.10 mol%, d = 0.10 mol%, e = 0.10mol%, f = 0.10mol%) was produced by the above method at the sintering temperature 1240 ℃ to have a dielectric composition composed of), the dielectric constant is 4000 when 1KHz at 25 ℃, dielectric loss is 1KHz at 25 ℃ When 0.9 was applied, the insulation resistance was 1 × 10 13 Ωcm, and the temperature characteristic (TCC) of the dielectric constant was -6% at -55 ° C and -7% at + 125 ° C.
본 발명에 의한 상기 유전체 자기 조성물은 1240℃의 비교적 낮은 온도에서 소결이 가능하기 때문에 적층세라믹 커패시터등에 적용할 수 있다.The dielectric ceramic composition according to the present invention can be applied to a laminated ceramic capacitor because it can be sintered at a relatively low temperature of 1240 ° C.
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