KR100268702B1 - compound of dielectric ceramic - Google Patents
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- KR100268702B1 KR100268702B1 KR1019980015429A KR19980015429A KR100268702B1 KR 100268702 B1 KR100268702 B1 KR 100268702B1 KR 1019980015429 A KR1019980015429 A KR 1019980015429A KR 19980015429 A KR19980015429 A KR 19980015429A KR 100268702 B1 KR100268702 B1 KR 100268702B1
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- 239000000919 ceramic Substances 0.000 title claims abstract description 24
- 150000001875 compounds Chemical class 0.000 title 1
- 239000000203 mixture Substances 0.000 claims abstract description 26
- 229910052684 Cerium Inorganic materials 0.000 claims abstract description 3
- 229910052779 Neodymium Inorganic materials 0.000 claims abstract description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract description 3
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims abstract 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims abstract 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims abstract 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 2
- 238000005245 sintering Methods 0.000 abstract description 11
- 230000002829 reductive effect Effects 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000002245 particle Substances 0.000 description 12
- 238000009413 insulation Methods 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 5
- 238000010304 firing Methods 0.000 description 5
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000012356 Product development Methods 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1236—Ceramic dielectrics characterised by the ceramic dielectric material based on zirconium oxides or zirconates
- H01G4/1245—Ceramic dielectrics characterised by the ceramic dielectric material based on zirconium oxides or zirconates containing also titanates
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- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
Description
본 발명은 유전체 세라믹 조성물에 관한 것으로, 보다 상세하게는 환원성 분위기에서 소결하여도 작고 균일한 입자 크기와 높은 절연 저항을 갖음과 함께 낮은 유전손실율 및 유전율의 온도 안정성이 향상된 특성을 갖게 하는 것에 관한 것이다.TECHNICAL FIELD The present invention relates to a dielectric ceramic composition, and more particularly, to a feature of improving the temperature stability of a low dielectric loss factor and dielectric constant while having a small and uniform particle size and high insulation resistance even when sintered in a reducing atmosphere. .
일반적으로 관통형 콘덴서, 적층형 콘덴서, 압전재료로서의 세라믹 필터, 기계필터, 초음파 변환기 및 압전부저 등의 용도에 유전체 세라믹 재료가 이용되고 있는데, 이러한 유전체 세라믹 조성물은 고주파에 대한 손실을 적게 하기 위하여 유전율을 크게 함과 함께 넓은 온도 범위에 걸쳐 유전율의 변화가 적을 것이 요구되고 있다.In general, dielectric ceramic materials are used in applications such as through-type capacitors, multilayer capacitors, ceramic filters as piezoelectric materials, mechanical filters, ultrasonic transducers, and piezoelectric buzzers. Such dielectric ceramic compositions have low dielectric constants in order to reduce losses to high frequencies. Increasingly, it is required to change the dielectric constant over a wide temperature range.
표면실장장치(SMD : Surface mounting device) 부품중에서 가장 대표적인 MLCC(multilayer ceramic chip capacitor)는 전자기기에서 coupling, 신호 우회(by-pass), 시정수 회로 형성 등의 기능을 담당하는 중요한 수동 소자이다.The most representative multilayer ceramic chip capacitor (MLCC) of surface mounting device (SMD) components is an important passive device for coupling, signal bypass and time constant circuit formation in electronics.
그 구조는 두께가 수 ㎛에서 수십 ㎛ 되는 유전체 층과 수 ㎛의 내부 전극층이 서로 번갈아 적층되어 있어 소형으로 대용량을 얻을 수 있다.The structure has a dielectric layer having a thickness of several micrometers to several tens of micrometers and an internal electrode layer of several micrometers alternately stacked on each other, so that a small capacity and a large capacity can be obtained.
MLCC의 고 용량화를 위하여 내부 전극의 적층수를 증가시키는 설계가 필요하지만, 기존의 전극재질인 Pd나 Ag/Pd 등의 귀금속(noble metal)을 사용할 경우 전체 제조비에서 내부 전극재가 차지하는 비율이 80% 정도로 커지게 되어 매우 비경제적이다.In order to increase the capacity of MLCC, it is necessary to increase the number of stacks of internal electrodes.However, when using noble metals such as Pd, Ag / Pd, etc., the internal electrode materials account for 80% of the total manufacturing cost. It is very uneconomical to grow to about%.
따라서 내부 전극재료로서 Ni 등의 비금속(base metal)을 사용한 제품개발이 이루어지고 있다.Therefore, product development using base metals, such as Ni, as an internal electrode material is performed.
MLCC의 원료로서 광범위하게 사용되고 있는 BaTiO3계 유전체 세라믹스는 저산소 분압 소결시 쉽게 환원되며 매우 낮은 절연저항 값을 갖는 n-type 유전특성을 나타낸다.BaTiO 3 based dielectric ceramics widely used as raw materials for MLCC are easily reduced during low oxygen partial pressure sintering and exhibit n-type dielectric properties with very low insulation resistance.
따라서 Ni 전극의 산화를 방지하기 위하여 환원성 분위기에서 소결하여도 절연저항이 감소되지 않으면서 양호한 유전특성을 갖는 조성을 선택해야 한다.Therefore, in order to prevent oxidation of the Ni electrode, a composition having good dielectric properties should be selected without reducing the insulation resistance even when sintered in a reducing atmosphere.
Y5V 세라믹 콘덴서란 사용 온도범위 -30℃ ∼ 85℃인 상온에서의 유전상수가 8000∼15000 정도이며, 유전손실율이 〈2.5% 이고, 유전율의 온도안정성이 25℃를 기준으로 +22 ∼ 82% 이내인 재질을 말한다.The Y5V ceramic capacitor has a dielectric constant of about 8000 to 15000 at room temperature in the range of -30 ℃ to 85 ℃, dielectric loss ratio of <2.5%, and temperature stability of dielectric constant within +22 to 82% based on 25 ℃. I say phosphorus material.
표 3에는 EIA에서 규정한 여러 가지 유전체 세라믹 조성물에 관한 규격표를 나타내었다.Table 3 shows the specification table for various dielectric ceramic compositions defined by EIA.
종래의 내환원성유전체 세라믹 조성물은 초기 (Ba1-xCax)m(Ti1-yZry)O3조성에서부터 최근에는 (Ba1-x-yCaxSry)m(Ti1-zZrz)O3조성이 주를 이루고 있으며, 유전특성의 향상을 위하여 상기 조성에 산화망간(MnO2), 산화마그네슘(MgO) 등을 첨가하고 있다.Conventional reduction resistant dielectric ceramic compositions range from initial (Ba 1-x Ca x ) m (Ti 1-y Zr y ) O 3 compositions to recently (Ba 1-xy Ca x Sr y ) m (Ti 1-z Zr z The composition is mainly composed of O 3. Manganese oxide (MnO 2 ), magnesium oxide (MgO), and the like are added to the composition to improve dielectric properties.
미합중국 특허 제4,115,493호는 상기의 조성으로 환원성 분위기 소결을 수행하여도 높은 절연저항의 우수한 특성을 보고하였으나 높은 소성온도(1300∼1370℃)와 유전율의 온도안정성(TCC)이 Y5V 규격을 벗어나는 단점이 있다.U.S. Patent No. 4,115,493 reports excellent properties of high insulation resistance even when reducing atmosphere sintering with the above composition, but the disadvantages of high firing temperature (1300 ~ 1370 ℃) and dielectric constant temperature stability (TCC) are out of Y5V specification. have.
또한 종래의 조성만으로는 소결체의 입자가 3㎛ 미만으로 작아질 수 없기 때문에 유전체 층 두께를 줄이는데 부적절하다.In addition, the conventional composition alone is not suitable for reducing the dielectric layer thickness because the particles of the sintered body cannot be made smaller than 3 mu m.
본 발명은 상기한 종래의 문제점을 해결하기 위한 것으로, 유전체 세라믹의 혼합성분 및 그 성분비를 적절히 조절하여 배합하므로서 환원성 분위기에서 소결하여도 작은 소결입자와 높은 절연저항성, 낮은 유전손실율 및 유전율의 온도안정성이 향상 특성을 갖는 내환원성유전체 세라믹 조성물을 제공하고자 하는데 그 목적이 있다.SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problems, and by mixing and mixing the mixed components and the ratio of the components of the dielectric ceramics appropriately, small sintered particles, high insulation resistance, low dielectric loss and dielectric constant temperature stability even when sintered in a reducing atmosphere It is an object of the present invention to provide a reducing resistant dielectric ceramic composition having this improvement characteristic.
도 1은 R2O3을 첨가하지 않을 때 유전체 세라믹 입자크기를 나타낸 사진Figure 1 is a photograph showing the dielectric ceramic particle size when R 2 O 3 is not added
도 2는 R2O3을 첨가할 때 유전체 세라믹 입자크기를 나타낸 사진Figure 2 is a photograph showing the dielectric ceramic particle size when adding R 2 O 3
상기한 목적을 달성하기 위한 본 발명은 하기위 화학식으로 표시되는 유전체 세라믹 조성물로 구성된다.The present invention for achieving the above object is composed of a dielectric ceramic composition represented by the following formula.
상기 화학식 중에서 R은 La, Ce, Nd 중 적어도 1종을 나타내는 산화물(R2O3)로 되며, 상기의 함량은 mol로 나타낸 것으로 m, a, b, c, x는 하기의 화학식을 만족시킨다.In the above formula, R is an oxide (R 2 O 3 ) representing at least one of La, Ce, and Nd, and the above content is expressed in mol, and m, a, b, c, and x satisfy the following formula: .
또한 SiO2와 MnO2는 상기의 내환원성유전체 세라믹 조성물에 대하여 mol로서 하기 화학식으로 이루어진다.In addition, SiO 2 and MnO 2 is made of the following chemical formula as mol with respect to the reducing dielectric ceramic composition.
x로 표시되는 CaO는 2가의 양이온으로서 Ba 자리에 치환되나 (Ba + Ca) /Ti 비(m값)가 1보다 약간 높을 경우 이온 반경 차이에도 불구하고 Ti 자리에 치환되어 억셉터로서 저산소분압 소성시 BaTiO3의 환원을 억제시켜 준다.CaO, represented by x, is substituted at Ba site as a divalent cation, but when the (Ba + Ca) / Ti ratio (m value) is slightly higher than 1, it is substituted at Ti site in spite of the difference in ionic radius, thereby reducing the oxygen partial pressure Inhibits reduction of BaTiO 3 .
그러나 Ca은 BaTiO3와 고용한계를 가지고 있으며 과량 첨가시 CaTiO3석출상을 형성시켜 유전특성을 저하시키므로 첨가량을 제한한다.However, Ca has a high solubility limit with BaTiO 3 and limits the amount of addition because CaTiO 3 precipitates to decrease the dielectric properties when excessively added.
특히 본 발명은 Ba 자리를 치환하는 R2O3를 적정량 첨가하여 보다 안정된 TCC 특성과 작고 균일한 입자크기를 갖는 우수한 유전특성의 내환원성 Y5V 유전체 세라믹을 얻을 수 있다.In particular, in the present invention, by adding an appropriate amount of R 2 O 3 substituting Ba sites, it is possible to obtain a reducing Y5V dielectric ceramic having excellent dielectric properties with more stable TCC characteristics and a smaller and uniform particle size.
그러나 상기 표시된 조성 범위를 넘어 첨가되면 유전손실율이 증가하고 절연저항이 감소하게 된다.However, when added beyond the indicated composition range, the dielectric loss rate increases and the insulation resistance decreases.
b와 x로 표시되어 SrO와 ZrO2는 Curie 온도(이하 Tc)를 상온으로 이동시키기 위하여 첨가되며 상기 표시된 조성 범위를 넘어 첨가되면 Tc가 음의 온도쪽으로 이동하여 원하는 규격의 Y5V 재질을 만족시킬 수 없다.SrO and ZrO 2 are added to move the Curie temperature (hereinafter, T c ) to room temperature and are indicated as b and x, and when added beyond the indicated composition range, T c moves toward the negative temperature to satisfy Y5V material of desired specification. You can't.
SiO2는 소결 촉진제로서 유전상수를 증가시키고 소성온도를 낮추는 효과를 나타내며 과량 첨가될 경우 액상 소결을 촉진시켜 소결 후 입자가 커지는 문제가 있다.SiO 2 has an effect of increasing the dielectric constant and lowering the sintering temperature as a sintering accelerator, and when excessively added, promotes liquid phase sintering, thereby increasing the particle size after sintering.
MnO2는 Ti 자리를 치환하는 억셉터 첨가제로서 절연저항의 증가를 위해 첨가하나 그 첨가량이 많을 경우 오히려 절연저항을 감소시키며 표면에 open pore를 남기는 단점이 있다.MnO 2 is an acceptor additive for substituting Ti sites, but is added to increase insulation resistance. However, when MnO 2 is added, the amount of MnO 2 decreases insulation resistance and leaves open pores on the surface.
다음은 실시예에 따라 설명한다.The following is described according to the embodiment.
표 1은 본 발명에서 사용한 조성을 나타낸 것으로, 기본 원료로 고순도의 BaCO3, CaCO3, SrCO3, R2O3, TiO2, ZrO2, SiO2, MnO2또는 SrZrO3, CaTiO3, CaZrO3, BaZrO3, SrTiO3등을 사용하였다.Table 1 shows the composition used in the present invention, the basic raw materials of high purity BaCO 3 , CaCO 3 , SrCO 3 , R 2 O 3 , TiO 2 , ZrO 2 , SiO 2 , MnO 2 or SrZrO 3 , CaTiO 3 , CaZrO 3 and the like, BaZrO 3, SrTiO 3 was used.
상기 표1과 관련한 혼합분말을 습식혼합을 통하여 얻은 뒤 대기중에서 1100℃에서 2시간 하소하였다.The mixed powder related to Table 1 was obtained through wet mixing, and then calcined at 1100 ° C. for 2 hours in air.
하소가 끝난 분말을 planetary type의 mill을 이용하여 습식분쇄하였으며 건조후 여기에 PVA 1%를 넣어 과립화하여 이를 12㎜의 원통형 금형에 넣고 1.5 ton/㎠의 압력으로 성형하여 직경 10㎜, 높이 약 1㎜ 크기를 갖는 disk type의 성형체를 제작하였다.The calcined powder was wet pulverized using a planetary type mill. After drying, the powder was granulated by adding 1% PVA to a 12 mm cylindrical mold and molded at a pressure of 1.5 ton / ㎠ to obtain a diameter of 10 mm and a height of approx. A disk type molded article having a size of 1 mm was prepared.
이렇게 얻어진 성형체를 내환원성 소결로를 이용하여 1200∼1350℃의 소성온도에서 소성하였다.The molded article thus obtained was calcined at a firing temperature of 1200 to 1350 ° C. using a reduction resistant sintering furnace.
환원분위기에서 산소분압은 1% ∼ 5% H2와 H2O 기체를 이용하여 조절하였다.The oxygen partial pressure in the reducing atmosphere was controlled by using 1% to 5% H 2 and H 2 O gas.
유전 특성의 측정은 성형체의 양면에 Ni 페이스트를 도포한후 소결하여 측정하였다.The dielectric properties were measured by applying Ni paste on both sides of the molded body and then sintering.
본 발명은 실험결과 표 2와 같이 나타났다.The present invention is shown in Table 2 as a result of the experiment.
비교발명(C, D)을 본 발명(A, B)과 비교하기 위해 상기 표 1에서 언급된 조성물 중 R2O3첨가제를 사용하지 않은 것만을 제외하고는 상기 방법과 동일한 방법으로 제조하였다.Comparative invention (C, D) was prepared in the same manner as the above method except that the R 2 O 3 additive in the composition mentioned in Table 1 above was not compared to the present invention (A, B).
상기 표 2의 실시예 1 ∼ 3과 4 ∼ 6은 각각 표 2에서의 A 와 B에 대한 유전특성을 1265℃, 1285℃, 1315℃의 3가지 소성온도에 대하여 나타낸 것이다.Examples 1 to 3 and 4 to 6 of Table 2 show dielectric properties of A and B in Table 2 with respect to three firing temperatures of 1265 ° C, 1285 ° C, and 1315 ° C, respectively.
비교예 7과 8은 표 1에서의 비교발명 C 와 D에 대한 유전특성이며 1315℃의 온도에서만 측정하였다.Comparative Examples 7 and 8 are dielectric properties for comparative inventions C and D in Table 1 and measured only at a temperature of 1315 ° C.
이에 나타난 바와 같이 낮은 소성온도의 경우 (실시예 3, 6)에 비해 높은 소성온도의 경우 (실시예 1, 4)가 보다 우수한 유전특성을 나타내고 있다.As shown in this figure, the higher firing temperatures (Examples 1 and 4) show better dielectric properties than the lower firing temperatures (Examples 3 and 6).
특히 높은 소성온도의 경우 R2O3를 첨가한 실시예(1, 4)는 R2O3를 첨가하지 않은 도 1인 비교예 (7, 8)에 비해 도 2와 같이 작고 균일한 입자크기를 가지며 낮은 유전손실율과 함께 온도 안정성이 우수한 EIA 규격을 만족시키는 내환원성 Y5V 유전체 세라믹을 얻을 수 있었다.In particular, a high sintering temperature performed by the addition of R 2 O 3 for example, (1, 4) is R 2, the comparison 1, a group without addition of O 3 for example, (7,8) also small and uniform particle size as in the second than in Reduction-resistant Y5V dielectric ceramics with low dielectric loss ratio and excellent temperature stability were found.
따라서 본 발명은 종래의 내환원성 조성에서의 큰 입자크기를 가지며 고온에서의 TCC 규격이 벗어나는 문제를 해결하고 작고 균일한 입자크기와 낮은 유전손실, Y5V 규격을 만족하는 TCC 값을 갖게 하는 유전체 세라믹을 얻게 된다.Therefore, the present invention solves the problem of deviation of TCC specification at high temperature and has a large particle size in the conventional reducing resistance composition, and has a dielectric ceramic that has a small and uniform particle size, low dielectric loss, and TCC value satisfying the Y5V specification. You get
이상에서와 같이 본 발명은 (Ba1-a-b-cCaaSrbRc)m(Tr1-xZrx)O3계 유전체 세라믹 조성물, 특히 R2O3로 표시되는 La2O3, Ce2O3, Nb2O3의 산화물을 배합하므로서 환원성 소결후에도 작은 입자크기와 함께 높은 절연저항을 가지며 낮은 유전손실율을 갖고 유전율의 온도 안정성이 매우 우수한 유전체 세라믹을 얻게 된다.As described above, the present invention provides (Ba 1-abc Ca a Sr b R c ) m (Tr 1-x Zr x ) O 3 based dielectric ceramic composition, in particular, La 2 O 3 , Ce 2 represented by R 2 O 3 . By mixing oxides of O 3 and Nb 2 O 3 , even after reducing sintering, a dielectric ceramic having a small particle size, high insulation resistance, low dielectric loss rate, and excellent temperature stability of dielectric constant is obtained.
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