JPS58122726A - レジスト寸法の精密制御による半導体素子の製造方法 - Google Patents
レジスト寸法の精密制御による半導体素子の製造方法Info
- Publication number
- JPS58122726A JPS58122726A JP57004035A JP403582A JPS58122726A JP S58122726 A JPS58122726 A JP S58122726A JP 57004035 A JP57004035 A JP 57004035A JP 403582 A JP403582 A JP 403582A JP S58122726 A JPS58122726 A JP S58122726A
- Authority
- JP
- Japan
- Prior art keywords
- exposure time
- center
- resist pattern
- width
- exposure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000004065 semiconductor Substances 0.000 title claims description 9
- 238000000034 method Methods 0.000 claims abstract description 22
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 10
- 238000000576 coating method Methods 0.000 claims description 6
- 238000000206 photolithography Methods 0.000 claims description 4
- 238000011161 development Methods 0.000 abstract description 10
- 230000002093 peripheral effect Effects 0.000 abstract description 7
- 230000003247 decreasing effect Effects 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 20
- 239000007921 spray Substances 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57004035A JPS58122726A (ja) | 1982-01-16 | 1982-01-16 | レジスト寸法の精密制御による半導体素子の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57004035A JPS58122726A (ja) | 1982-01-16 | 1982-01-16 | レジスト寸法の精密制御による半導体素子の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58122726A true JPS58122726A (ja) | 1983-07-21 |
| JPS6219049B2 JPS6219049B2 (enrdf_load_stackoverflow) | 1987-04-25 |
Family
ID=11573701
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57004035A Granted JPS58122726A (ja) | 1982-01-16 | 1982-01-16 | レジスト寸法の精密制御による半導体素子の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58122726A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5943550A (en) * | 1996-03-29 | 1999-08-24 | Advanced Micro Devices, Inc. | Method of processing a semiconductor wafer for controlling drive current |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01159559U (enrdf_load_stackoverflow) * | 1988-04-23 | 1989-11-06 |
-
1982
- 1982-01-16 JP JP57004035A patent/JPS58122726A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5943550A (en) * | 1996-03-29 | 1999-08-24 | Advanced Micro Devices, Inc. | Method of processing a semiconductor wafer for controlling drive current |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6219049B2 (enrdf_load_stackoverflow) | 1987-04-25 |
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