JPS58122038A - 薄膜生成装置 - Google Patents

薄膜生成装置

Info

Publication number
JPS58122038A
JPS58122038A JP510882A JP510882A JPS58122038A JP S58122038 A JPS58122038 A JP S58122038A JP 510882 A JP510882 A JP 510882A JP 510882 A JP510882 A JP 510882A JP S58122038 A JPS58122038 A JP S58122038A
Authority
JP
Japan
Prior art keywords
electrode
substrate
grid
film
particles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP510882A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0124536B2 (enExample
Inventor
Yoshihiro Hamakawa
圭弘 浜川
Yasunori Ando
靖典 安東
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SEISAN GIJUTSU SHINKO KYOKAI
Nissin Electric Co Ltd
Original Assignee
SEISAN GIJUTSU SHINKO KYOKAI
Nissin Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SEISAN GIJUTSU SHINKO KYOKAI, Nissin Electric Co Ltd filed Critical SEISAN GIJUTSU SHINKO KYOKAI
Priority to JP510882A priority Critical patent/JPS58122038A/ja
Publication of JPS58122038A publication Critical patent/JPS58122038A/ja
Publication of JPH0124536B2 publication Critical patent/JPH0124536B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
JP510882A 1982-01-16 1982-01-16 薄膜生成装置 Granted JPS58122038A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP510882A JPS58122038A (ja) 1982-01-16 1982-01-16 薄膜生成装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP510882A JPS58122038A (ja) 1982-01-16 1982-01-16 薄膜生成装置

Publications (2)

Publication Number Publication Date
JPS58122038A true JPS58122038A (ja) 1983-07-20
JPH0124536B2 JPH0124536B2 (enExample) 1989-05-12

Family

ID=11602157

Family Applications (1)

Application Number Title Priority Date Filing Date
JP510882A Granted JPS58122038A (ja) 1982-01-16 1982-01-16 薄膜生成装置

Country Status (1)

Country Link
JP (1) JPS58122038A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60147114A (ja) * 1984-01-11 1985-08-03 Daihen Corp 光起電力素子の製造装置
JP2010121156A (ja) * 2008-11-18 2010-06-03 Fuji Electric Holdings Co Ltd 容量結合型プラズマcvd装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60147114A (ja) * 1984-01-11 1985-08-03 Daihen Corp 光起電力素子の製造装置
JP2010121156A (ja) * 2008-11-18 2010-06-03 Fuji Electric Holdings Co Ltd 容量結合型プラズマcvd装置

Also Published As

Publication number Publication date
JPH0124536B2 (enExample) 1989-05-12

Similar Documents

Publication Publication Date Title
FR2581244A1 (fr) Source d'ions du type triode a une seule chambre d'ionisation a excitation haute frequence et a confinement magnetique du type multipolaire
JPS582022A (ja) 薄膜形成方法
JPS58122038A (ja) 薄膜生成装置
TW494524B (en) Electrostatic attraction mechanism, surface processing method and surface processing device
JPS5858147A (ja) プラズマ処理装置
Dhayal et al. Using fast atomic source and low-energy plasma ions for polymer surface modification
TWI355866B (enExample)
JPS5916975A (ja) スパツタリング装置
JPS63223171A (ja) 高能率シ−トプラズマ型スパタリング装置
JP3577785B2 (ja) イオンビーム発生装置
JPS5678411A (en) Preparation of noncrystalline silicon film
JPS5585671A (en) Sputtering apparatus
JPS583635A (ja) プラズマ中化学気相成長装置
JPS58112045A (ja) 薄膜形成方法
JPS61273840A (ja) 電子ビ−ム励起イオン照射装置
JPH04120277A (ja) プラズマcvd装置
JPS60110871A (ja) 薄膜形成装置
JPS6199670A (ja) イオンプレ−テイング装置
JPS5615838A (en) Gaseous phase growth device
JP2003213410A (ja) スパッタリング方法およびその装置
JPS6114652B2 (enExample)
JPH0273964A (ja) 回転カソードを用いた薄膜形成装置
JPH09104975A (ja) スパッタ装置
JPS5855037A (ja) 蒸着装置
Barchenko et al. Ions neutralization by reflection from solid target surface