JPS58121689A - Ｘ線像変換装置 - Google Patents
Ｘ線像変換装置Info
- Publication number
- JPS58121689A JPS58121689A JP57225774A JP22577482A JPS58121689A JP S58121689 A JPS58121689 A JP S58121689A JP 57225774 A JP57225774 A JP 57225774A JP 22577482 A JP22577482 A JP 22577482A JP S58121689 A JPS58121689 A JP S58121689A
- Authority
- JP
- Japan
- Prior art keywords
- ray
- insulating layer
- layer
- ray image
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 28
- 230000003287 optical effect Effects 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 3
- 239000011669 selenium Substances 0.000 claims description 3
- 150000003346 selenoethers Chemical class 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- -1 polyethylene Polymers 0.000 claims description 2
- 229910052711 selenium Inorganic materials 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims 2
- 150000003568 thioethers Chemical class 0.000 claims 2
- 229920002799 BoPET Polymers 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- 239000005041 Mylar™ Substances 0.000 claims 1
- 239000004698 Polyethylene Substances 0.000 claims 1
- 239000004642 Polyimide Substances 0.000 claims 1
- 229910052787 antimony Inorganic materials 0.000 claims 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- 229910052793 cadmium Inorganic materials 0.000 claims 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims 1
- ZZEMEJKDTZOXOI-UHFFFAOYSA-N digallium;selenium(2-) Chemical compound [Ga+3].[Ga+3].[Se-2].[Se-2].[Se-2] ZZEMEJKDTZOXOI-UHFFFAOYSA-N 0.000 claims 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims 1
- 229910052753 mercury Inorganic materials 0.000 claims 1
- 239000011368 organic material Substances 0.000 claims 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 claims 1
- 229920000573 polyethylene Polymers 0.000 claims 1
- 229920001721 polyimide Polymers 0.000 claims 1
- 125000003748 selenium group Chemical group *[Se]* 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 6
- 238000003384 imaging method Methods 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 206010052428 Wound Diseases 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 230000005251 gamma ray Effects 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/246—Measuring radiation intensity with semiconductor detectors utilizing latent read-out, e.g. charge stored and read-out later
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K4/00—Conversion screens for the conversion of the spatial distribution of X-rays or particle radiation into visible images, e.g. fluoroscopic screens
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G1/00—X-ray apparatus involving X-ray tubes; Circuits therefor
- H05G1/08—Electrical details
- H05G1/64—Circuit arrangements for X-ray apparatus incorporating image intensifiers
Landscapes
- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Molecular Biology (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Measurement Of Radiation (AREA)
- Conversion Of X-Rays Into Visible Images (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE31511554 | 1981-12-23 | ||
| DE19813151155 DE3151155A1 (de) | 1981-12-23 | 1981-12-23 | Roengtenbildwandlungseinrichtung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58121689A true JPS58121689A (ja) | 1983-07-20 |
Family
ID=6149592
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57225774A Pending JPS58121689A (ja) | 1981-12-23 | 1982-12-21 | Ｘ線像変換装置 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS58121689A (de) |
| DE (1) | DE3151155A1 (de) |
| FR (1) | FR2518818B1 (de) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2605167B1 (fr) * | 1986-10-10 | 1989-03-31 | Thomson Csf | Capteur d'images electrostatique |
| EP0338091A4 (en) * | 1987-10-21 | 1992-12-09 | Hitachi, Ltd. | Light-receiving element and method of operating the same |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR70038E (fr) * | 1956-09-07 | 1959-02-02 | Thomson Houston Comp Francaise | Dispositif et procédé d'intensification de l'énergie radiante |
| DE2141934A1 (de) * | 1971-08-20 | 1973-03-01 | Siemens Ag | Strahlenmessgeraet |
| DE2644168C3 (de) * | 1976-09-30 | 1981-06-11 | Siemens AG, 1000 Berlin und 8000 München | Verwendung einer kristallinen Wismutoxid-Verbindung der Zusammensetzung Bi↓10↓-14X↓1↓O↓n↓, sowie Vorrichtungen hierzu und Verfahren zu deren Herstellung |
| US4268750A (en) * | 1979-03-22 | 1981-05-19 | The University Of Texas System | Realtime radiation exposure monitor and control apparatus |
-
1981
- 1981-12-23 DE DE19813151155 patent/DE3151155A1/de not_active Withdrawn
-
1982
- 1982-12-14 FR FR8220936A patent/FR2518818B1/fr not_active Expired
- 1982-12-21 JP JP57225774A patent/JPS58121689A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR2518818B1 (fr) | 1986-03-07 |
| FR2518818A1 (fr) | 1983-06-24 |
| DE3151155A1 (de) | 1983-06-30 |
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