JPS58118170A - 光起電力素子の製造方法 - Google Patents

光起電力素子の製造方法

Info

Publication number
JPS58118170A
JPS58118170A JP57000629A JP62982A JPS58118170A JP S58118170 A JPS58118170 A JP S58118170A JP 57000629 A JP57000629 A JP 57000629A JP 62982 A JP62982 A JP 62982A JP S58118170 A JPS58118170 A JP S58118170A
Authority
JP
Japan
Prior art keywords
paste
binder
powder
cdte
sintered film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57000629A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6248395B2 (enrdf_load_stackoverflow
Inventor
Akihiko Nakano
明彦 中野
Hitoshi Matsumoto
仁 松本
Hiroshi Uda
宇田　宏
Yasumasa Komatsu
小松　康允
Seiji Ikegami
池上　清治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP57000629A priority Critical patent/JPS58118170A/ja
Publication of JPS58118170A publication Critical patent/JPS58118170A/ja
Publication of JPS6248395B2 publication Critical patent/JPS6248395B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
JP57000629A 1982-01-07 1982-01-07 光起電力素子の製造方法 Granted JPS58118170A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57000629A JPS58118170A (ja) 1982-01-07 1982-01-07 光起電力素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57000629A JPS58118170A (ja) 1982-01-07 1982-01-07 光起電力素子の製造方法

Publications (2)

Publication Number Publication Date
JPS58118170A true JPS58118170A (ja) 1983-07-14
JPS6248395B2 JPS6248395B2 (enrdf_load_stackoverflow) 1987-10-13

Family

ID=11479014

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57000629A Granted JPS58118170A (ja) 1982-01-07 1982-01-07 光起電力素子の製造方法

Country Status (1)

Country Link
JP (1) JPS58118170A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62203385A (ja) * 1986-03-03 1987-09-08 Matsushita Electric Ind Co Ltd 太陽電池
JPS6418275A (en) * 1987-07-14 1989-01-23 Matsushita Electric Ind Co Ltd Manufacture of photovoltaic element
JPS6418276A (en) * 1987-07-14 1989-01-23 Matsushita Electric Ind Co Ltd Manufacture of cdte
JPS6424438A (en) * 1987-07-20 1989-01-26 Matsushita Electric Ind Co Ltd Manufacture of photosensor and device therefor
JPS6424470A (en) * 1987-07-20 1989-01-26 Matsushita Electric Ind Co Ltd Method and device for manufacturing photosensor
JPS6464369A (en) * 1987-09-04 1989-03-10 Matsushita Electric Ind Co Ltd Manufacture of indium copper selenide

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62203385A (ja) * 1986-03-03 1987-09-08 Matsushita Electric Ind Co Ltd 太陽電池
JPS6418275A (en) * 1987-07-14 1989-01-23 Matsushita Electric Ind Co Ltd Manufacture of photovoltaic element
JPS6418276A (en) * 1987-07-14 1989-01-23 Matsushita Electric Ind Co Ltd Manufacture of cdte
JPS6424438A (en) * 1987-07-20 1989-01-26 Matsushita Electric Ind Co Ltd Manufacture of photosensor and device therefor
JPS6424470A (en) * 1987-07-20 1989-01-26 Matsushita Electric Ind Co Ltd Method and device for manufacturing photosensor
JPS6464369A (en) * 1987-09-04 1989-03-10 Matsushita Electric Ind Co Ltd Manufacture of indium copper selenide

Also Published As

Publication number Publication date
JPS6248395B2 (enrdf_load_stackoverflow) 1987-10-13

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