JPS6418275A - Manufacture of photovoltaic element - Google Patents

Manufacture of photovoltaic element

Info

Publication number
JPS6418275A
JPS6418275A JP62175180A JP17518087A JPS6418275A JP S6418275 A JPS6418275 A JP S6418275A JP 62175180 A JP62175180 A JP 62175180A JP 17518087 A JP17518087 A JP 17518087A JP S6418275 A JPS6418275 A JP S6418275A
Authority
JP
Japan
Prior art keywords
cdte
mixture
powder
paste
added
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62175180A
Other languages
Japanese (ja)
Inventor
Hajime Takada
Takeshi Hibino
Hiroyuki Kitamura
Kuniyoshi Omura
Noriyuki Ueno
Mikio Murozono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62175180A priority Critical patent/JPS6418275A/en
Publication of JPS6418275A publication Critical patent/JPS6418275A/en
Pending legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To stabilize the quality of paste for a CdTe sintered film by a method wherein the mixture of Cd powder and Te powder is pulverized after water is added to it and CdTe compound is produced in the mixed fine powder and muddy mixture containing the fine powder is dried at a temperature not higher than 130 deg.C to produce fine powder containing the CdTe compound. CONSTITUTION:When paste for a CdTe sintering film is manufactured, the mixture of Cd powder and Te powder is pulverized into fine powder after water is added to it to provide the mixture of CdTe, Cd and Te. Then the mixture is dried at a temperature not higher than 130 deg.C. Binder is added to the dried mixture to prepare paste. In order to improve the adhesive force to a CdS sintered film or to improve the strength of the CdTe thin film, flux may be added when the binder is added. With this constitution, pulverization and mixing can be performed in a short time, the variation of viscosity in mixing the paste can be suppressed, the variation of the composition ratio of powder mixture of CdTe, Cd and Te in the paste can be suppressed, the variation of the particle diameter of the power can be suppressed and, moreover, the photoelectric conversion efficiency can be improved.
JP62175180A 1987-07-14 1987-07-14 Manufacture of photovoltaic element Pending JPS6418275A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62175180A JPS6418275A (en) 1987-07-14 1987-07-14 Manufacture of photovoltaic element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62175180A JPS6418275A (en) 1987-07-14 1987-07-14 Manufacture of photovoltaic element

Publications (1)

Publication Number Publication Date
JPS6418275A true JPS6418275A (en) 1989-01-23

Family

ID=15991670

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62175180A Pending JPS6418275A (en) 1987-07-14 1987-07-14 Manufacture of photovoltaic element

Country Status (1)

Country Link
JP (1) JPS6418275A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0449584U (en) * 1990-09-03 1992-04-27
CN114920561A (en) * 2022-05-27 2022-08-19 先导薄膜材料（广东）有限公司 Preparation method of cadmium telluride doped target material

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58118170A (en) * 1982-01-07 1983-07-14 Agency Of Ind Science & Technol Manufacture of photovoltaic element
JPS6248395A (en) * 1985-08-28 1987-03-03 Res Assoc Util Of Light Oil Production of l-tryptophan

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58118170A (en) * 1982-01-07 1983-07-14 Agency Of Ind Science & Technol Manufacture of photovoltaic element
JPS6248395A (en) * 1985-08-28 1987-03-03 Res Assoc Util Of Light Oil Production of l-tryptophan

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0449584U (en) * 1990-09-03 1992-04-27
CN114920561A (en) * 2022-05-27 2022-08-19 先导薄膜材料（广东）有限公司 Preparation method of cadmium telluride doped target material

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