CN107680711A - A kind of crystal silicon solar silicon plate positive silver paste - Google Patents
A kind of crystal silicon solar silicon plate positive silver paste Download PDFInfo
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- CN107680711A CN107680711A CN201610639164.8A CN201610639164A CN107680711A CN 107680711 A CN107680711 A CN 107680711A CN 201610639164 A CN201610639164 A CN 201610639164A CN 107680711 A CN107680711 A CN 107680711A
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- Prior art keywords
- silver paste
- positive silver
- lead
- crystal silicon
- powder
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 83
- 239000004332 silver Substances 0.000 title claims abstract description 62
- 229910052709 silver Inorganic materials 0.000 title claims abstract description 62
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 47
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 47
- 239000010703 silicon Substances 0.000 title claims abstract description 47
- 239000013078 crystal Substances 0.000 title claims abstract description 22
- 239000011521 glass Substances 0.000 claims abstract description 41
- 239000000843 powder Substances 0.000 claims abstract description 31
- 239000000654 additive Substances 0.000 claims abstract description 18
- 230000000996 additive effect Effects 0.000 claims abstract description 16
- 239000000203 mixture Substances 0.000 claims abstract description 7
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 claims description 4
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 claims description 4
- 239000004925 Acrylic resin Substances 0.000 claims description 4
- 229920000178 Acrylic resin Polymers 0.000 claims description 4
- 239000004952 Polyamide Substances 0.000 claims description 4
- 229920002647 polyamide Polymers 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910003069 TeO2 Inorganic materials 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Substances [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 claims description 3
- 229910000027 potassium carbonate Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 2
- XMFOQHDPRMAJNU-UHFFFAOYSA-N lead(II,IV) oxide Inorganic materials O1[Pb]O[Pb]11O[Pb]O1 XMFOQHDPRMAJNU-UHFFFAOYSA-N 0.000 claims description 2
- 239000002994 raw material Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 17
- 239000002313 adhesive film Substances 0.000 abstract description 10
- 230000032798 delamination Effects 0.000 abstract description 5
- 230000007797 corrosion Effects 0.000 abstract description 3
- 238000005260 corrosion Methods 0.000 abstract description 3
- 230000001681 protective effect Effects 0.000 abstract description 3
- 239000005038 ethylene vinyl acetate Substances 0.000 description 13
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 13
- 238000005245 sintering Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- 239000000428 dust Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 239000002002 slurry Substances 0.000 description 6
- 239000000969 carrier Substances 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
- 238000005096 rolling process Methods 0.000 description 5
- RBNWAMSGVWEHFP-UHFFFAOYSA-N trans-p-Menthane-1,8-diol Chemical compound CC(C)(O)C1CCC(C)(O)CC1 RBNWAMSGVWEHFP-UHFFFAOYSA-N 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 230000032683 aging Effects 0.000 description 4
- 239000006117 anti-reflective coating Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 230000007935 neutral effect Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000004925 denaturation Methods 0.000 description 2
- 230000036425 denaturation Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- JPJALAQPGMAKDF-UHFFFAOYSA-N selenium dioxide Chemical compound O=[Se]=O JPJALAQPGMAKDF-UHFFFAOYSA-N 0.000 description 2
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 description 2
- 238000010257 thawing Methods 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000005331 crown glasses (windows) Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000156 glass melt Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 235000013372 meat Nutrition 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000006259 organic additive Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- SOQBVABWOPYFQZ-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical class [O-2].[O-2].[Ti+4] SOQBVABWOPYFQZ-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 230000004083 survival effect Effects 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 235000010215 titanium dioxide Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
- H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
Abstract
The present invention relates to a kind of crystal silicon solar silicon plate positive silver paste, a kind of crystal silicon solar silicon plate positive silver paste, the positive silver paste includes silver powder, lead-free glass powder and organic carrier, also contain compositions of additives in the unleaded positive silver paste, the weight ratio between the lead-free glass powder and additive is 1: 0.1 5.Present invention reduces corrosion of the alkaline matter in lead-free glass powder to the encapsulating material EVA adhesive film of battery, avoid encapsulating material EVA adhesive film and protective effect to battery is lost because of delamination, improve the service life of battery.
Description
Technical field
The present invention relates to a kind of crystal silicon solar energy battery positive silver paste, belong to technical field of solar batteries.
Background technology
Solar energy is a kind of green energy resource, because its is pollution-free, inexhaustible, do not limited by resource advantage the advantages that and it is more next
More it is valued by people, so solar cell arises at the historic moment.Crystal silicon solar batteries are that one kind can respond simultaneously to luminous energy
The device of electric energy can be converted light energy into, it can convert light energy into electric energy using photovoltaic effect.When sunlight arrives
During cell panel, certain electrical potential difference is produced on battery the two poles of the earth surface, connects external circuitses, it is possible to produce electric current.Several
Battery is connected by way of serial or parallel connection, then close by encapsulating material EVA adhesive film (ethylene-vinyl acetate copolymer)
Envelope protection, with regard to battery component can be made, and then battery array is formed, match somebody with somebody with other electronic devices and be combined into autonomous system or be incorporated to
Power network, there is provided the supply of electric power of cleaning.Crystal silicon solar batteries electrode includes positive silver electrode, back side silver electrode and Al-BSF electricity
Pole, positive silver electrode are to be formed using front side silver paste by silk-screen printing, drying, high temperature sintering, and the performance of front side silver paste is direct
The performance of solar battery sheet front silver electrode is determined, is the critical material in crystal silicon solar energy battery manufacture.
At present, crystal silicon solar batteries are generally prepared with positive silver paste by silver powder, lead-free glass powder and organic carrier,
Most of positive silver pastes use the glass dust containing higher proportion lead oxide.In order to preferably safeguard life cycle for the survival of mankind
Border, the unleaded development trend for turning into electronics manufacturing of electronic product, preparing lead-free silver slurry using lead-free glass powder also turns into
Following developing direction.In existing positive silver paste technology, contained lead-free glass powder includes basic anhydride, in sintering process, just
Silver paste is to SiNx：The corrosiveness of H antireflective coatings is completed mainly by alkali glass, and reacts mainly on silicon substrate surface to enter
OK, simultaneously because the slurry thawing time is extremely short, viscosity is high, poor fluidity, and this can cause each material distribution in electrode material different.
Glass in course of reaction close to silicon substrate body portion reacts and is consumed, but still there are a considerable amount of basic species on electrode top layer
Matter remains, the alkaline matter of residual make under high temperature and hygrothermal environment the ester of the encapsulating material EVA adhesive film of battery it is strong occur fracture,
Aging cracking denaturation occurs for polymer molecular chain, ultimately results in the delamination of encapsulating material EVA adhesive film and protection is lost to battery and is made
With reducing the service life of battery.
The content of the invention
The primary and foremost purpose of the present invention is, overcomes problems of the prior art, there is provided a kind of crystal of superior performance
Silicon solar silicon plate positive silver paste.To solve above technical problem, a kind of crystal silicon solar silicon plate provided by the present invention is just
Silver paste, it is characterised in that：The raw material components and weight content of the positive silver paste are as follows：Silver powder 87-92 parts, organic carrier 5-
0.1~2 part of 10 parts, 1~5 part of lead-free glass powder and additive, wherein the percetage by weight sum of each component are 100%.It is described
Silver powder is high tap density silver powder, and it is per cubic centimeter that tap density is more than 6g.The composition and weight percent of the lead-free glass powder
Number is：B2O35-8%, Pb3O4- 30-35%, SiO22-6%, TeO220-35%, V2O520-40%, Sr2co3 0.5-
1%th, Ceo20.5-1%, K2CO30.5-1%.The composition and percetage by weight of organic carrier be：Butyl carbitol 40-60%,
Butyl carbitol acetate 30-70%, acrylic resin 2-5%, ethyl cellulose 1-3%, polyamide cured 2-5%, BYK110
3-5%.
It is an advantage of the current invention that overcome problems of the prior art, there is provided a kind of crystal silicon solar silicon plate is just
The preparation method of silver paste, manufactured positive silver paste electricity conversion is high, and adhesive force is high, and adhesive force converts after high temperature ageing
Efficiency decay is small, and compared with prior art, the present invention is applied in combination and controlled theirs by glass dust and organic additive
Usage ratio, ensureing SiNx of the glass dust in sintering process to silicon chip surface：H antireflective coatings produce corrosiveness, realize silver
While electrode contacts with the good conductive of silicon substrate, in sintering process and cooling stage, additive reacts with lead-free glass powder
And positive silver electrode surface can be partly transferred to, consume the remaining alkaline matter of positive silver electrode surface so that positive silver electrode table
Face reduces corrosion of the alkaline matter for the encapsulating material EVA adhesive film of battery, avoids package material in neutral or close neutrality
Material EVA adhesive film loses the protective effect to battery because of delamination, improves the service life of battery.
Embodiment
Embodiment one
Positive silver paste provided by the invention is used for the positive silver electrode for making crystal silicon solar batteries, and the positive silver paste is by silver
Powder, lead-free glass powder, organic carrier and compositions of additives are prepared.Lead-free glass powder liquefies in Fast Sintering, in silver
Cementation is played between powder and silicon chip, while plays a part of penetrating antireflective coating, makes to be formed between silver powder and silicon chip
Good Ohmic contact.The lead-free glass powder that the present invention uses is known to those skilled in the art, and it can be directly from market
Purchase can also be prepared using method well known to those skilled in the art, and its softening temperature is 350 DEG C~600 DEG C.Because
When its softening temperature is less than 350 DEG C, may be caused because of the excess flow of glass melt between positive silver electrode and silicon chip
Glass film layers are blocked up, cause the contact resistance of positive silver electrode and silicon chip to rise；, may when its softening temperature is higher than 600 DEG C
Cause glass dust and silver powder to sinter not exclusively, produce " raw burn " phenomenon, cause adhesive force to decline in the bulk resistor with positive silver electrode
Rise.It is adapted to the lead-free glass powder of the present invention to can be selected by B2O3、Pb3O4、SiO2、TeO2、V2O5、Sr2co3、Ceo2、K2CO3Composition
Crown glass system, the size controlling of glass dust below 10 microns, dosage be silver paste weight 1~5%.If glass
The dosage of powder less than 0.5%, can influence antireflective coating etching and silicon substrate and silver electrode between adhesive force；If dosage exceedes
5%, the electrical property of cell piece can be reduced.Lead-free glass powder is in sintering process, to the corrosiveness master of silicon nitride anti-reflecting film
To be carried out on silicon substrate surface, simultaneously as the thawing time of positive silver paste is extremely short, viscosity is high, poor fluidity, causes positive silver electricity
The distribution of each material is different in extremely, causes the lead-free glass powder close to silicon substrate to be consumed, and still there is phase on the top layer of positive silver electrode
When the alkaline matter of quantity remains, the alkaline matter of these residuals makes the encapsulating material EVA of battery under high temperature and hygrothermal environment
The ester of glued membrane is strong to occur fracture, polymer molecular chain generation aging cracking denaturation, ultimately results in the delamination of encapsulating material EVA adhesive film
And protective effect is lost to battery, reduce the service life of battery.In order to consume the remaining alkaline matter of positive silver electrode surface,
So that positive silver electrode surface reduces corruption of the alkaline matter for the encapsulating material EVA adhesive film of battery in neutral or close neutrality
Lose, additive has been used in positive silver paste provided by the invention.In sintering process, additive melts and sent out with lead-free glass powder
Raw reaction, produces the neutral substance harmless to encapsulating material；In the cooling stage of sintering process back segment, because lead-free glass powder melts
Melt body cooling meat, the additive of melting state are transferred to positive silver electrode surface so that its further alkalescence with electrode surface
Substance reaction, remaining alkali compounds is consumed, positive silver electrode surface is caused in neutral or close neutrality, so as to eliminate basic species
The influence of confrontation EVA layer.The fusing point for the additive that the present invention uses is lower than the softening temperature of glass dust 10 DEG C~260 DEG C, purpose
It is the distribution using the fusing point difference control additive of the two.The fusing point of additive is higher than glass dust softening point, or the two difference deficiency
10 DEG C, after sintering cooling, additive may be retained inside positive silver electrode without migrating to surface.The fusing point and glass of additive
Glass powder softening point difference is more than 260 DEG C, and its fusing point and volatilization temperature are too low, cause additive in sintering process excess flow or wave
Hair, influences electrode outward appearance.Additive amount is the 0.1~2% of silver paste gross weight, if dosage is too low, can not play and disappear
The effect of excess basic material is consumed, can not solve EVA aging delaminations：If dosage is too high, electrode body electricity may be increased
Resistance.In order to both can guarantee that there is good Ohmic contact between silver powder and silicon chip, and can prevents the alkaline matter pair in slurry
In the corrosion of the encapsulating material EVA adhesive film of battery, present invention employs additive and lead-free glass powder to be applied in combination, and controls it
Usage ratio, the weight between lead-free glass powder and additive is than controlling in the range of 1: 0.1~5.0, less than the ratio model
Enclose, the corrosive nature of positive silver paste can be had an impact, cause positive silver paste contact resistance to rise；Higher than the proportion, no
Corrosiveness of the alkaline matter in lead-free glass powder to EVA can be prevented.
The silver powder used in the present invention can select silver powder well known in the art, preferably 0.2~2 micron of average grain diameter, shake
Real density is more than 4.5g/cc silver powder.
The organic carrier that the present invention uses can select resin well known in the art and solvent to prepare, preferably following method systems
Standby organic carrier：By butyl carbitol 40-60%, butyl carbitol acetate 30-70%, acrylic resin 2-5%, ethyl
The cured 2-5% of cellulose 1-3%, polyamide, BYK110 3-5% organic solvent are mixed evenly and are heated to 60-90 DEG C,
Until polymer is completely dissolved, clear viscous liquids are formed, impurity screening, obtain the organic carrier.
Crystal silicon solar energy battery provided by the invention can be prepared with unleaded positive silver paste using following methods：
Lead-free glass powder, 8~20% organic carrier of positive silver paste weight 0.5~5% will be accounted for, 0.3~4.5% adds
After adding agent well mixed, 75~90% silver powder is added, is ground after stirring, obtain crystal silicon solar energy battery with unleaded positive silver
Slurry.
By above-mentioned slurry with 280~400 mesh web plates, crystal silicon solar batteries silicon substrate is printed on by way of silk-screen printing
On piece front, the slurry after printing is by 160~270 DEG C of drying, and sintering forms front silver electricity at a high temperature of 650~950 DEG C
Pole.
With reference to specific embodiment, the invention will be further described.
The preparation of organic carrier：
It is cured to weigh butyl carbitol 40, butyl carbitol acetate 40, acrylic resin 2, ethyl cellulose 1, polyamide
3rd, BYK110 3, it is mixed and heated to 60~90 DEG C, dissolves, obtain organic binder bond, it is standby.
Embodiment 1
The ultra-fine softening temperatures of 5g are weighed as 560 DEG C of lead-free glass powders, 75g silver powder, 19g organic carriers, 1g diboron trioxides,
Well mixed, three-roller rolling fineness is less than 10 microns, adjusts viscosity to 280~400Pa.s with terpinol, obtains crystalline silicon too
The positive energy unleaded positive silver paste of battery.
Embodiment 2
The ultra-fine softening temperatures of 3g are weighed as 600 DEG C of lead-free glass powders, 75g silver powder, 20g organic carriers, the oxidations of 0.3g five two
Phosphorus, 1g tellurium dioxide, be well mixed, three-roller rolling fineness is less than 10 microns, with terpinol adjust viscosity to 280~
400Pa.s, crystal silicon solar energy battery is obtained with unleaded positive silver paste.
Embodiment 3
The ultra-fine softening temperatures of 0.5g are weighed to aoxidize for 350 DEG C of lead-free glass powders, 90g silver powder, 9.2g organic carriers, 0.3g five
Two phosphorus, it is well mixed, three-roller rolling fineness is less than 10 microns, adjusts viscosity to 280~400Pa.s with terpinol, obtains crystalline substance
The unleaded positive silver paste of body silicon solar cell.
Embodiment 4
The ultra-fine softening temperatures of 0.9g are weighed as 435 DEG C of lead-free glass powders, 86.6g silver powder, 8g organic carriers, 4.5 titanium dioxides
Selenium, it is well mixed, three-roller rolling fineness is less than 10 microns, adjusts viscosity to 280~400Pa.s with terpinol, obtains crystal
The unleaded positive silver paste of silicon solar cell.
Embodiment 5
The ultra-fine softening temperatures of 2g are weighed as 480 DEG C of lead-free glass powders, 85g silver powder, 9.5g organic carriers, 4.5 selenium dioxide,
Well mixed, three-roller rolling fineness is less than 10 microns, adjusts viscosity to 280~400Pa.s with terpinol, obtains crystalline silicon too
The positive energy unleaded positive silver paste of battery.
Claims (4)
- A kind of 1. crystal silicon solar silicon plate positive silver paste, it is characterised in that：The raw material components and weight of the positive silver paste contain Amount is as follows：0.1~2 part of silver powder 87-92 parts, organic carrier 5-10 parts, 1~5 part of lead-free glass powder and additive, wherein each component Percetage by weight sum be 100%.
- A kind of 2. crystal silicon solar silicon plate positive silver paste according to right 1, it is characterised in that：The silver powder is high jolt ramming Density silver powder, it is per cubic centimeter that tap density is more than 6g.
- A kind of 3. crystal silicon solar silicon plate positive silver paste according to right 1, it is characterised in that：The lead-free glass powder Composition and percetage by weight are：B2O35-8%, Pb3O430-35%, SiO22-6%, TeO220-35%, V2O520-40%, Sr2co30.5-1%, Ceo20.5-1%, K2CO30.5-1%.
- A kind of 4. crystal silicon solar silicon plate positive silver paste according to right 1, it is characterised in that：The composition of organic carrier and Percetage by weight is：Butyl carbitol 40-60%, butyl carbitol acetate 30-70%, acrylic resin 2-5%, ethyl are fine Tie up the cured 2-5% of plain 1-3%, polyamide, BYK110 3-5%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610639164.8A CN107680711A (en) | 2016-08-01 | 2016-08-01 | A kind of crystal silicon solar silicon plate positive silver paste |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610639164.8A CN107680711A (en) | 2016-08-01 | 2016-08-01 | A kind of crystal silicon solar silicon plate positive silver paste |
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| CN107680711A true CN107680711A (en) | 2018-02-09 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111732342A (en) * | 2020-08-07 | 2020-10-02 | 上海银浆科技有限公司 | Glass component and crystalline silicon solar cell conductive silver paste containing same |
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| CN104575667A (en) * | 2014-12-24 | 2015-04-29 | 乐凯胶片股份有限公司 | Conductive silver paste for frontage of crystalline silicon solar cell |
| CN105810293A (en) * | 2016-05-13 | 2016-07-27 | 浙江光达电子科技有限公司 | Silver paste for back electrode of crystalline silicon solar cell and preparation method of silver paste |
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| WO2010082478A1 (en) * | 2009-01-13 | 2010-07-22 | 日立金属株式会社 | Silicon nitride substrate manufacturing method, silicon nitride substrate, silicon nitride circuit substrate, and semiconductor module |
| CN102592704A (en) * | 2012-02-13 | 2012-07-18 | 江苏瑞德新能源科技有限公司 | Aluminum paste for solar energy battery and preparation method thereof |
| CN104575667A (en) * | 2014-12-24 | 2015-04-29 | 乐凯胶片股份有限公司 | Conductive silver paste for frontage of crystalline silicon solar cell |
| CN105810293A (en) * | 2016-05-13 | 2016-07-27 | 浙江光达电子科技有限公司 | Silver paste for back electrode of crystalline silicon solar cell and preparation method of silver paste |
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| CN111732342A (en) * | 2020-08-07 | 2020-10-02 | 上海银浆科技有限公司 | Glass component and crystalline silicon solar cell conductive silver paste containing same |
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