CN103762249A - Back-field passivated-aluminum conductive slurry for crystalline-silicon solar cell and preparation method - Google Patents
Back-field passivated-aluminum conductive slurry for crystalline-silicon solar cell and preparation method Download PDFInfo
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Abstract
The invention belongs to the field of novel materials of a solar cell and specifically relates to a back-field passivated-aluminum conductive slurry for a crystalline-silicon solar cell and a preparation method. The back-field passivated-aluminum conductive slurry for the crystalline-silicon solar cell is mainly formed by mixing of the following raw materials in mass percentage: an aluminum powder 60-75%, a silicoaluminum powder 5-10%, a glass powder 1-10% and an organic adhesive 15-30%. The back-field passivated-aluminum conductive slurry is mainly printed at the back face of the crystalline-silicon solar cell. After undergoing an infrared fast burning process (the actual peak temperature of a silicon wafer surface is 780 DEG C to 810 DEG C, for 1-2 seconds), the aluminum and a silicon substrate undergo a silicoaluminum reaction so that ohmic contact is realized and a back field is formed and thus high conversion efficiency of the cell is ensured. An aluminum-conductive-slurry sintered membrane and the base material are great in adhesiveness, aluminum balls and aluminum blisters are not generated, waterproofness is great so that assembly production is not affected and reliability of the cell is ensured.
Description
Technical field
The invention belongs to solar cell field of new, particularly a kind of crystal silicon solar batteries back surface field passivation aluminum conductive electric slurry and preparation method.
Background technology
Crystal silicon solar batteries is a kind of semipermanent physical battery that solar energy is converted into electric energy, along with fossil (oil, coal, natural gas etc.) the extreme consumption of the energy, the lack of energy and the day by day serious greenhouse effect that produce, the mankind become more and more urgent to the demand of new cleaning fuel.In very long time in future, the sun is by the effective supplier who is mankind's clean energy resource, at present, crystal silicon solar batteries is to convert solar energy into one of domestic energy active parts, its range of application just expands to daily life from space flight, military affairs, when not producing new pollution, the reduction of cost will make solar cell obtain applying more widely.
According to International Energy Agency's prediction, whole world coal can only be with 220 years, and oil exploitation peak value is positioned at 2012, and will be at 30-60 years post consumptions to the greatest extent.And solar radiant energy was estimated to keep the radiant output of approximately constant in 10,000,000,000 years, it is predicted, the year two thousand fifty solar energy by the ratio that occupies 20% in whole energy resource structure, and will reach 70% to 2100 years these ratios.Obviously, will there is basic change in mankind's energy resource structure in this century, solar energy will become the most important energy.
Aluminium back surface field is that crystalline silicon modern solar cell generally adopts, typical back of the body surface passivation structure, through development for many years, it is ripe, stable that the production technology of aluminium back surface field has tended to, to every research of aluminium back surface field also in-depth day by day, these have all determined that aluminium back surface field will be widely used in crystal-silicon solar cell production within the quite a while from now on.Yet along with the development of technique, thinner solar cell be about to occur, this to aluminium back surface field passivation have higher requirement, further study the passivation of aluminium back surface field, be efficient solar battery research and produce in a very important important step.The surface passivation of aluminium back surface field, can reduce back of the body recombination-rate surface, improve the collection rate of minority carrier, thereby improve open circuit voltage, aluminium is easy to contact with P type silicon formation good ohmic simultaneously, alusil alloy structure for this reason, not only there is the effect of back surface field, but also can form well back side ohmic contact, as the output electrode of electric current, reduce contact resistance, improve the electric property of battery.
Summary of the invention
The invention provides a kind of crystal silicon solar batteries back surface field passivation aluminum conductive electric slurry, it is unleaded, without cadmium, without thallium, utilizes its cell piece of preparing without aluminium pill, aluminium blister, crooked little, forms BSF layer well.
The present invention also provides a kind of preparation method of described crystal silicon solar batteries back surface field passivation aluminum conductive electric slurry.
The technical solution adopted for the present invention to solve the technical problems is:
A crystal silicon solar batteries back surface field passivation aluminum conductive electric slurry, this slurry is mainly mixed by following raw material by mass percentage: aluminium powder 60-75%, silicon aluminium alloy powder 5-10%, glass dust 1-10%, organic bond 16-22%.This back surface field passivation aluminum conductive electric slurry is for being printed on the back side of crystal silicon solar batteries sheet, through infrared fast-firing technique (780 ℃-810 ℃ of silicon chip surface true peak temperature, 1-2 second), aluminium and the reaction of matrix silicon generation alusil alloy, realize ohmic contact and form back surface field, guarantee the high transformation efficiency of cell piece, aluminum conductive electric slurry sintered membrane and sill adhesive force is good, do not play aluminium pill, aluminium blister, water-tolerant, the reliability that do not affect the production of assembly and guaranteed cell piece.
As preferably, described aluminium powder is purity more than 99.9%, average grain diameter 1.0-10 μ m, and surface is covered with the ball aluminum powder that the atomization of pellumina is produced, and the thickness of pellumina is 2.0-10.0nm.Further preferably, the average grain diameter 6.0-8.0 μ m(laser particle of described aluminium powder), apparent density 0.60-0.85g/cc, specific area is 0.70-1.00m
2/ g.Realize back surface field surface passivation and mainly reduce semiconductor surface activity, thereby reduce recombination rate, once added surperficial cleaning procedure, make gettering more thorough.Generally select aluminium powder purity can at the cell piece back side, introduce impurity level lower than 99.9%, increase charge carrier recombination rate, thereby reduce electric current and the open circuit voltage of battery, select purity higher than 99.9% aluminium powder, to contribute to the formation of back surface field P+ layer.Aluminium powder top layer is easily oxidized, if thickness surpasses 10nm, in slurry sintering process, can form alloy with contacting of aluminium to silicon and cause obstacle, hinders the formation of P+ layer.The present invention effectively improves P+ layer thickness by adding silicon aluminium alloy powder, reduces charge carrier recombination rate, forms better aluminium back surface field passivation effect.
As preferably, its inorganic constituents of described glass dust and respective quality percentage are as follows: SiO
21-10%, ZnO10-30%, B
2o
310-40%, Bi
2o
330-50%, Al
2o
35-10%, V
2o
51-7%.B wherein
2o
3, Bi
2o
3, SiO
2be the material of main part that forms glass, can form the vitreum of stable homogeneous.ZnO, Al
2o
3reach and control silicon warp degree after glass softening point and slurry sintering, reduce glass swelling coefficient and make to reach suitable angularity after slurry sintering.V
2o
5the mobility that is used for controlling glass makes in slurry sintering, there is suitable flow regime.B wherein
2o plays the effect of flux, can reduce the melt temperature of glass, and at high temperature reduces glass viscosity, and its content does not have effective fluxing action lower than 10%, higher than 60% strength of glass, weakens rapidly; SiO
2in glass, play bridging action, form glass network together with oxide, contribute to improve the stability of glass and improve intensity, its content can increase higher than the fusing point of 30% glass, is unfavorable for the formation of back surface field layer; B
2o
3act on SiO
2similar, B in addition
2o
3can reduce glass fusing point, adjust sintering temperature and the thermal coefficient of expansion of slurry, boron content is high lower than 10% system fusing point, and boron content is large higher than 30% system thermal coefficient of expansion, increases the angularity of aluminium paste; ZnO is used for adjusting the thermal coefficient of expansion of glass and crystallization rate when cooling, and the thermal coefficient of expansion of the high glass of content is little, contributes to reduce the warpage degree of cell piece after sintering.
As preferably, the preparation method of described glass dust is as follows: oxide is mixed in proportion, put into crucible, 600 ℃ of insulations 0.5 hour, are then warming up to 1200 ℃ of meltings 2 hours, and after shrend, ball milling makes glass dust average grain diameter≤10 μ m.
As preferably, by mass percentage composed as follows of described organic bond: ethyl cellulose 1-10%, phenolic resins or novolac epoxy resin 1-10%, rosin 0.5-2%, terpinol 20-50%, phenmethylol 10-30%, BS 5-20%, butyl carbitol 20-40%.Ethyl cellulose is the main component of adhesive; Rosin prevents that aluminium paste degree of oxidation in oven dry from increasing, and in slurry, plays anti-settling effect; Terpinol, butyl carbitol, phenmethylol are the main components of solvent, and rate of volatilization when three is mixed for adjusting solvent oven dry, makes slurry reach suitable mobility and thixotropy, reaches desirable printing effect.Lubrification and dispersiveness that BS increases slurry reach better printing effect, and it is finer and close that phenolic resins or novolac epoxy resin can make to dry rear aluminum membranous layer, has better adhesive force.
As preferably, the preparation method of described organic bond is as follows: the preparation method of described organic bond is as follows: described phenolic resins or novolac epoxy resin, terpinol, phenmethylol, BS and butyl carbitol are weighed up and put into container by mass percentage, mix and be heated to 80 ℃-160 ℃, under stirring, add solid ethyl cellulose and rosin powder, until pressed powder dissolves completely, form transparent uniform solution and obtain organic bond.
As preferably, the fineness≤15 μ m of described aluminum conductive electric slurry, viscosity is 20-40Pas.
As preferably, silicon aluminium alloy powder average grain diameter is 1-10 μ m, and purity is the alloy powder of silicon 15%, aluminium 85%.
A kind of preparation method of described crystal silicon solar batteries back surface field passivation aluminum conductive electric slurry, according to described raw material proportioning, aluminium powder, silicon aluminium alloy powder, glass dust and organic bond are put into de-airing mixer to be stirred, through three-high mill, disperse again, control scraper plate fineness≤15 μ m, make mixture form the slurry evenly with lasting rheological behavior, obtain aluminum conductive electric slurry.Fineness≤15 μ the m of described aluminum conductive electric slurry, viscosity is 20-40Pas.Raw material stirs in de-airing mixer, and object is to reach organic carrier to the more effective infiltration of powder, makes powder fully disperse in carrier simultaneously, reduces the difficulty that powder disperses on three-roll grinder.Scraper plate fineness is the aggregation extent of particle in reaction paste, is controlled at below 15 μ m, and slurry is fully disperseed, and granularity is greater than 15 μ m and just there will be uniformity inadequate, the phenomenon of network blocking during printing.Viscosity is controlled at 25-45Pas and contributes to obtain good printing effect, and viscosity is higher than 45Pas, and the printing weight of slurry is excessive, slurry haftplatte impact printing; Viscosity is too low lower than the viscosity of 25Pas slurry, and printing weight is partially light, and spillage etc. can affect the open circuit voltage of battery.
1. the preparation of inorganic bond phase glass dust
Component and the content of glass dust are respectively: silicon dioxide (SiO
2) 1-10%, diboron trioxide (B
2o
3) 10-40%, zinc oxide (ZnO) 10-30%, bismuth oxide (Bi
2o
3) 30-50%, aluminium oxide (Al
2o
3) 5-10%, vanadic oxide (V
2o
5) 1-7%.
Above-mentioned raw materials is weighed by mass percentage, be evenly mixed in porcelain crucible, in Muffle furnace, found, be warming up to 600 degree, be incubated 0.5 hour, be warming up to 1200 ℃ of meltings 2 hours, by the glass shrend of fusing, and make glass dust average grain diameter for≤10 μ m with ball milling.
2. the preparation of organic bond
The component of organic bond and content are as follows respectively: ethyl cellulose 1-10%, phenolic resins or novolac epoxy resin 1-10%, rosin 0.5-2%, terpinol 20-50%, phenmethylol 10-30%, BS 5-20%, butyl carbitol 20-40%, weighs up and puts into rustless steel container by mass percentage by above-mentioned, mix and heat 80 ℃-160 ℃, under agitation add ethyl cellulose and rosin, continue to stir, until become completely transparent homogeneous solution as organic bond.
3. the configuration of aluminum conductive electric slurry
Aluminium powder 60-75% quality, silicon aluminium alloy powder 5-10%, glass dust 1-10% quality, organic binding 16-22% quality are pressed to electrocondution slurry proportion of composing, after total amount 100% is mixed, with three-high mill, mixture is sheared to dispersion again, the slurry (fineness < 15 μ m, viscosity 20-40Pa.s) that mixture is formed evenly have lasting rheological behavior is target product aluminum conductive electric slurry.
The present invention, by the optimization of component and technique, has manufactured a kind of function admirable, is more suitable for the passivation aluminum conductive electric slurry that crystal silicon solar batteries back surface field is used.Aluminum membranous layer after burning till and silicon substrate have well adhesive force, resistance to water, without aluminium pill, aluminium blister, the cell piece bending of burning till is little, transformation efficiency is higher.Compared with prior art, advantage of the present invention is:
1. unorganic glass is the Binder Phase of aluminum conductive electric slurry mutually, and the glass within the scope of optimized proportion makes aluminium fully melt in sintering process, infiltrate silicon face, thereby the uniform and stable silicon chip surface recombination rate that effectively reduces of aluminium back surface field makes it back surface field firm adhesion after sintering simultaneously.
2. aluminium powder is aluminium paste critical function phase, and the present invention uses spherical atomizing aluminium powder to meet requirement on electric performance, has obtained outside desirable back surface field effect, and substrate deformation is little, does not play aluminium pill, aluminium blister.Back surface field is uniform and smooth, and outward appearance is good.
3. the combination of different solvents in organic bond, has guaranteed bat dissolution characteristics and rate of volatilization when, and aluminium powder oxidation degree in drying course is reduced, and aluminum conductive electric slurry and base material infiltrate, and the rate of settling is slow, and while printing performance is good.
4. silicon aluminium alloy powder is effective powder filler, impels and forms even aluminium back surface field, increases BSF layer thickness, thereby promotes electrical property.
Embodiment
Below by specific embodiment, technical scheme of the present invention is described in further detail.Should be appreciated that enforcement of the present invention is not limited to the following examples, any pro forma accommodation that the present invention is made and/or change all will fall into protection range of the present invention.
In the present invention, if not refer in particular to, all part, percentages are unit of weight, and all equipment and raw material etc. all can be buied from market or the industry is conventional.
Embodiment 1-6:
A crystal silicon solar batteries back surface field passivation aluminum conductive electric slurry is to be mixed by raw material by mass percentage as shown in table 1.Aluminium powder, silicon aluminium alloy powder, glass dust and organic bond are put into de-airing mixer by the proportioning of table 1, continue to stir about 2 hours, form homogeneous mixture, through three-high mill, disperse again, grind to form homogeneous slurry, scraper plate fineness≤15 μ m, finally obtains having aluminum conductive electric slurry lasting rheological behavior, that fineness≤15 μ m, viscosity are 20-40Pas.
Table 1(weight: g)
| Embodiment | 1 | 2 | 3 | 4 | 5 | 6 |
| Aluminium powder | 70 | 68 | 60 | 75 | 65 | 72 |
| Silicon aluminium alloy powder | 6 | 10 | 8 | 7 | 9 | 5 |
| Glass dust | 3 | 1 | 10 | 2 | 7 | 6 |
| Organic bond | 21 | 21 | 22 | 16 | 19 | 17 |
1. aluminium powder
Aluminium powder is the atomizing aluminium powder that commercially available nitrogen protection method is produced, and aluminium powder is aluminium nitride passivation ball aluminum powder, the average grain diameter 6.0-8.0 μ m(laser particle of aluminium powder), apparent density 0.60-0.85g/cc, specific area is 0.70-1.00m
2/ g.Silicon aluminium alloy powder average grain diameter is 1-10 μ m, and purity is the alloy powder of silicon 15%, aluminium 85%.
2. silicon aluminium alloy powder
Silicon aluminium alloy powder average grain diameter is 5-6 μ m, and purity is the alloy powder of silicon 15%, aluminium 85%.
3. inorganic bond phase---the preparation of glass dust
The homemade glass dust of the present invention is crown glass, and its inorganic constituents and corresponding proportioning are in Table 2.Above-mentioned raw materials is weighed, after evenly mixing, put into porcelain crucible, melting in 1200 ℃/1 hour in Muffle furnace, using adding after the glass shrend of evenly fusing in polyurethane tank, use pure water as medium, 6mm zirconia ball is ball milling ball, by zirconia ball: glass: pure water mass ratio is 3:1:1, loading is 1/3rd to 2/3rds of ball grinder cumulative volume, it during ball milling, is 24 hours, tank speed 100-150/ divides, obtain average grain diameter≤10.0 μ m unorganic glass powder, this glass dust is as the inorganic bond of aluminum conductive electric slurry of the present invention.
Table 2(weight: g)
| Embodiment | 1 | 2 | 3 | 4 | 5 | 6 |
| SiO 2 | 10 | 5 | 1 | 6 | 2 | 8 |
| ZnO | 22 | 18 | 30 | 20 | 13 | 10 |
| B 2O 3 | 25 | 15 | 10 | 35 | 40 | 19 |
| Bi 2O 3 | 33 | 47 | 48 | 30 | 32 | 50 |
| Al 2O 3 | 5 | 8 | 10 | 6 | 9 | 7 |
| V 2O 5 | 5 | 7 | 1 | 3 | 4 | 6 |
4. the preparation of organic bond
Press as the component of table 3 and weight proportion, terpinol, butyl carbitol and tributyl phosphate are weighed up and put into rustless steel container by mass percentage, mix and be heated to 60-80 ℃, under stirring, add solid ethyl cellulose and rosin powder, stir 1-2 hour, now pressed powder dissolves completely, and forms transparent homogeneous solution completely, the organic bond of the present invention using it as aluminum conductive electric slurry.
Table 3(weight: g)
| Embodiment | 1 | 2 | 3 | 4 | 5 | 6 |
| Ethyl cellulose | 5.5 | 5 | 1 | 8 | 6 | 10 |
| Phenolic resins | 6 | 2 | 10 | 9 | 5 | 1 |
| Rosin | 1.5 | 1.2 | 0.8 | 0.5 | 2 | 1 |
| Terpinol | 45 | 50 | 40 | 20.5 | 27 | 20 |
| Phenmethylol | 11 | 11.8 | 10 | 15 | 30 | 15 |
| BS | 9 | 5 | 14.2 | 20 | 10 | 13 |
| Butyl carbitol | 22 | 25 | 24 | 27 | 20 | 40 |
The aluminum conductive electric slurry performance that embodiment 1-6 obtains is in Table 4, and compares with the use result of conventional aluminium paste.
Table 4
Viscosity: VT-04E60rpm2#spindle25 ℃.
With the bent 1.0-1.5mm of vernier caliper lateral bending, smooth in appearance, without aluminium pill, aluminium blister, bonds aluminium film without peeling with EVA.
As can be seen from Table 4, above 1-6 embodiment data result can meet existing market requirement, the highest with embodiment 1 data.Embodiment 1-6 all has printing capability relatively preferably, and viscosity is controlled at 30Pas left and right.After 780 ℃ of sintering, outward appearance aspect, aluminium lamination smooth surface is without blister, more than adhesive force reaches 25N, warpage is little, under similarity condition aspect electrical property, back surface field passivation aluminium paste, than common aluminium paste high 0.02-0.05% on electricity conversion, is realized the optimum efficiency of surface passivation.
As can be seen from Table 4, above 1-6 embodiment data result can meet existing market requirement, the highest with embodiment 1 data.
Back surface field passivation aluminum conductive electric slurry of the present invention is for being printed on the back side of crystal silicon solar batteries sheet, through infrared fast-firing technique (780 ℃-810 ℃ of silicon chip surface true peak temperature, 1-2 second), aluminium and the reaction of matrix silicon generation alusil alloy, realize ohmic contact and form back surface field, guarantee the high transformation efficiency of cell piece, aluminum conductive electric slurry sintered membrane and sill adhesive force is good, do not play aluminium pill, aluminium blister, water-tolerant, the reliability that do not affect the production of assembly and guaranteed cell piece.
Above-described embodiment is a kind of preferably scheme of the present invention, not the present invention is done to any pro forma restriction, also has other variant and remodeling under the prerequisite that does not exceed the technical scheme that claim records.
Claims (10)
1. a crystal silicon solar batteries back surface field passivation aluminum conductive electric slurry, is characterized in that: this slurry is mainly mixed by following raw material by mass percentage:
Aluminium powder 60-75%,
Silicon aluminium alloy powder 5-10%,
Glass dust 1-10%,
Organic bond 16-22%.
2. aluminum conductive electric slurry according to claim 1, is characterized in that: described aluminium powder is purity more than 99.9%, average grain diameter 1.0-10 μ m, and surface is covered with the ball aluminum powder that the atomization of pellumina is produced, and the thickness of pellumina is 2.0-10.0 nm.
3. aluminum conductive electric slurry according to claim 2, is characterized in that: the average grain diameter 6.0-8.0 μ m of described aluminium powder, and apparent density 0.60-0.85g/cc, specific area is 0.70-1.00m
2/ g.
4. aluminum conductive electric slurry according to claim 1 and 2, is characterized in that: its inorganic constituents of described glass dust and respective quality percentage are as follows: SiO
21-10%, ZnO 10-30%, B
2o
310-40%, Bi
2o
330-50%, Al
2o
35-10%, V
2o
51-7%.
5. aluminum conductive electric slurry according to claim 4, the preparation method who it is characterized in that described glass dust is as follows: oxide is mixed in proportion, put into crucible, 600 ℃ are incubated 0.5 hour, then be warming up to 1200 ℃ of meltings 2 hours, after shrend, ball milling makes glass dust average grain diameter≤10 μ m.
6. aluminum conductive electric slurry according to claim 1 and 2, is characterized in that: by mass percentage composed as follows of described organic bond:
Ethyl cellulose 1-10%,
Phenolic resins or novolac epoxy resin 1-10%,
Rosin 0.5-2%,
Terpinol 20-50%,
Phenmethylol 10-30%,
BS 5-20%,
Butyl carbitol 20-40%.
7. aluminum conductive electric slurry according to claim 6, it is characterized in that: the preparation method of described organic bond is as follows: described phenolic resins or novolac epoxy resin, terpinol, phenmethylol, BS and butyl carbitol are weighed up and put into container by mass percentage, mix and be heated to 80 ℃-160 ℃, under stirring, add solid ethyl cellulose and rosin powder, until pressed powder dissolves completely, form transparent uniform solution and obtain organic bond.
8. aluminum conductive electric slurry according to claim 1 and 2, is characterized in that: the fineness≤15 μ m of described aluminum conductive electric slurry, viscosity is 20-40Pas.
9. aluminum conductive electric slurry according to claim 1 and 2, is characterized in that: silicon aluminium alloy powder average grain diameter is 1-10 μ m, and purity is the alloy powder of silicon 15%, aluminium 85%.
10. the preparation method of a described crystal silicon solar batteries back surface field passivation aluminum conductive electric slurry, it is characterized in that: according to raw material proportioning as claimed in claim 1, aluminium powder, silicon aluminium alloy powder, glass dust and organic bond are put into de-airing mixer to be stirred, through three-high mill, disperse again, control scraper plate fineness≤15 μ m, make mixture form the slurry evenly with lasting rheological behavior, obtain aluminum conductive electric slurry.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101901843A (en) * | 2009-05-27 | 2010-12-01 | 比亚迪股份有限公司 | Conductive paste and preparation method thereof |
| CN102254587A (en) * | 2011-05-17 | 2011-11-23 | 陈晓东 | Sizing agent for Al-BSF (Al-back surface field) of silicon solar cell and preparation method thereof |
| CN102324267A (en) * | 2011-08-18 | 2012-01-18 | 江苏泓源光电科技有限公司 | High-photoelectric-conversion-efficiency crystalline silicon solar battery aluminum paste and preparation method thereof |
| CN102760511A (en) * | 2012-05-28 | 2012-10-31 | 杭州正银电子材料有限公司 | Crystalline silicon solar cell BSF (back surface field) lead-free aluminum electroconductive slurry and preparation method thereof |
| CN102855961A (en) * | 2012-08-24 | 2013-01-02 | 西安交通大学苏州研究院 | Paste for formation of solar cell back electrodes and preparation method thereof |
| CN103204632A (en) * | 2012-01-14 | 2013-07-17 | 比亚迪股份有限公司 | Conductive glass powder and its preparation method, crystalline silicon solar battery aluminum conductive paste and preparation method |
-
2013
- 2013-10-16 CN CN201310485907.7A patent/CN103762249B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101901843A (en) * | 2009-05-27 | 2010-12-01 | 比亚迪股份有限公司 | Conductive paste and preparation method thereof |
| CN102254587A (en) * | 2011-05-17 | 2011-11-23 | 陈晓东 | Sizing agent for Al-BSF (Al-back surface field) of silicon solar cell and preparation method thereof |
| CN102324267A (en) * | 2011-08-18 | 2012-01-18 | 江苏泓源光电科技有限公司 | High-photoelectric-conversion-efficiency crystalline silicon solar battery aluminum paste and preparation method thereof |
| CN103204632A (en) * | 2012-01-14 | 2013-07-17 | 比亚迪股份有限公司 | Conductive glass powder and its preparation method, crystalline silicon solar battery aluminum conductive paste and preparation method |
| CN102760511A (en) * | 2012-05-28 | 2012-10-31 | 杭州正银电子材料有限公司 | Crystalline silicon solar cell BSF (back surface field) lead-free aluminum electroconductive slurry and preparation method thereof |
| CN102855961A (en) * | 2012-08-24 | 2013-01-02 | 西安交通大学苏州研究院 | Paste for formation of solar cell back electrodes and preparation method thereof |
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| CN104575685A (en) * | 2015-01-12 | 2015-04-29 | 浙江光隆能源科技股份有限公司 | Crystal silicon solar cell high adhesive force back surface field aluminum electrocondution slurry and preparation method |
| CN104821190A (en) * | 2015-04-07 | 2015-08-05 | 江苏正能电子科技有限公司 | Crystalline silica solar battery backfield aluminum slurry and preparation method thereof |
| CN104810076A (en) * | 2015-04-28 | 2015-07-29 | 华东理工大学 | Silver-aluminum paste used for positive electrode of high-performance N type solar cell |
| CN105244074B (en) * | 2015-10-30 | 2017-06-20 | 杭州杭硕新材料科技有限公司 | A kind of crystal silicon solar energy battery aluminium paste |
| CN105244074A (en) * | 2015-10-30 | 2016-01-13 | 杭州杭硕新材料科技有限公司 | Aluminum slurry for crystalline silicon solar battery, and preparation method thereof |
| CN105551570A (en) * | 2015-12-17 | 2016-05-04 | 武汉波信科技有限公司 | Aluminum back field paste for crystalline silicon solar cell and preparation method of aluminum back field paste |
| CN106098146A (en) * | 2016-07-08 | 2016-11-09 | 南通天盛新能源股份有限公司 | High-efficiency crystal silicon solar battery local back field aluminum paste and the application in PERC battery |
| US10483412B2 (en) | 2016-07-08 | 2019-11-19 | Nantong T-Sun New Energy Co., Ltd. | High efficiency local back electrode aluminum paste for crystalline silicon solar cells and its application in PERC cells |
| CN107611224A (en) * | 2017-09-27 | 2018-01-19 | 常州大学 | A kind of method of lifting PERC solar cell aluminium paste performances |
| CN110689991A (en) * | 2018-07-04 | 2020-01-14 | 白金科技股份有限公司 | Conductive paste |
| CN110491545A (en) * | 2019-09-04 | 2019-11-22 | 南通天盛新能源股份有限公司 | A kind of thin grid slurry of N-type solar battery front side and preparation method thereof |
| CN110491545B (en) * | 2019-09-04 | 2021-05-18 | 南通天盛新能源股份有限公司 | N-type solar cell front surface fine grid slurry and preparation method thereof |
| US20220077328A1 (en) * | 2020-09-08 | 2022-03-10 | Toyo Aluminium Kabushiki Kaisha | Conductive paste and method for producing topcon solar cell |
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| CN114203334A (en) * | 2021-11-25 | 2022-03-18 | 大连海外华昇电子科技有限公司 | Back aluminum paste for water-based crystalline silicon solar cell and preparation method thereof |
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Denomination of invention: Back-field passivated-aluminum conductive slurry for crystalline-silicon solar cell and preparation method Effective date of registration: 20181221 Granted publication date: 20160302 Pledgee: Hangzhou United Rural Commercial Bank, Limited by Share Ltd branch of science and technology Pledgor: Hangzhou Right Silver Electronic Material Material Co., Ltd. Registration number: 2018330000505 |