JPS58118111A - プラズマｃｖｄ装置 - Google Patents

プラズマｃｖｄ装置

Info

Publication number
JPS58118111A
JPS58118111A JP61582A JP61582A JPS58118111A JP S58118111 A JPS58118111 A JP S58118111A JP 61582 A JP61582 A JP 61582A JP 61582 A JP61582 A JP 61582A JP S58118111 A JPS58118111 A JP S58118111A
Authority
JP
Japan
Prior art keywords
gas
substrate
plasma
cylindrical
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61582A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0472378B2 (enrdf_load_stackoverflow
Inventor
Ko Yasui
安井　甲
Kazuhisa Kato
加藤　一久
Yuichi Ishikawa
裕一 石川
Akio Matsuzawa
松沢　昭生
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Stanley Electric Co Ltd
Ulvac Inc
Original Assignee
Stanley Electric Co Ltd
Ulvac Inc
Nihon Shinku Gijutsu KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stanley Electric Co Ltd, Ulvac Inc, Nihon Shinku Gijutsu KK filed Critical Stanley Electric Co Ltd
Priority to JP61582A priority Critical patent/JPS58118111A/ja
Publication of JPS58118111A publication Critical patent/JPS58118111A/ja
Publication of JPH0472378B2 publication Critical patent/JPH0472378B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photoreceptors In Electrophotography (AREA)
JP61582A 1982-01-07 1982-01-07 プラズマｃｖｄ装置 Granted JPS58118111A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61582A JPS58118111A (ja) 1982-01-07 1982-01-07 プラズマｃｖｄ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61582A JPS58118111A (ja) 1982-01-07 1982-01-07 プラズマｃｖｄ装置

Publications (2)

Publication Number Publication Date
JPS58118111A true JPS58118111A (ja) 1983-07-14
JPH0472378B2 JPH0472378B2 (enrdf_load_stackoverflow) 1992-11-18

Family

ID=11478632

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61582A Granted JPS58118111A (ja) 1982-01-07 1982-01-07 プラズマｃｖｄ装置

Country Status (1)

Country Link
JP (1) JPS58118111A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58147026A (ja) * 1982-02-24 1983-09-01 Toshiba Corp グロ−放電による膜形成装置
JPS6086276A (ja) * 1983-10-17 1985-05-15 Canon Inc 放電による堆積膜の形成方法
CN102335580A (zh) * 2011-06-21 2012-02-01 浙江大学 电容耦合等离子体制备四族纳米颗粒的装置及方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5391664A (en) * 1977-01-24 1978-08-11 Hitachi Ltd Plasma cvd device
JPS56121631A (en) * 1980-02-29 1981-09-24 Canon Inc Film forming device
JPS56130465A (en) * 1980-03-14 1981-10-13 Canon Inc Film forming method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5391664A (en) * 1977-01-24 1978-08-11 Hitachi Ltd Plasma cvd device
JPS56121631A (en) * 1980-02-29 1981-09-24 Canon Inc Film forming device
JPS56130465A (en) * 1980-03-14 1981-10-13 Canon Inc Film forming method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58147026A (ja) * 1982-02-24 1983-09-01 Toshiba Corp グロ−放電による膜形成装置
JPS6086276A (ja) * 1983-10-17 1985-05-15 Canon Inc 放電による堆積膜の形成方法
CN102335580A (zh) * 2011-06-21 2012-02-01 浙江大学 电容耦合等离子体制备四族纳米颗粒的装置及方法

Also Published As

Publication number Publication date
JPH0472378B2 (enrdf_load_stackoverflow) 1992-11-18

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