JPS58116719A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS58116719A
JPS58116719A JP56212095A JP21209581A JPS58116719A JP S58116719 A JPS58116719 A JP S58116719A JP 56212095 A JP56212095 A JP 56212095A JP 21209581 A JP21209581 A JP 21209581A JP S58116719 A JPS58116719 A JP S58116719A
Authority
JP
Japan
Prior art keywords
energy beam
scanning
irradiated
boundary
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56212095A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6347254B2 (enrdf_load_stackoverflow
Inventor
Takashi Iwai
崇 岩井
Junji Sakurai
桜井　潤治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56212095A priority Critical patent/JPS58116719A/ja
Publication of JPS58116719A publication Critical patent/JPS58116719A/ja
Publication of JPS6347254B2 publication Critical patent/JPS6347254B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02689—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using particle beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Recrystallisation Techniques (AREA)
JP56212095A 1981-12-30 1981-12-30 半導体装置の製造方法 Granted JPS58116719A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56212095A JPS58116719A (ja) 1981-12-30 1981-12-30 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56212095A JPS58116719A (ja) 1981-12-30 1981-12-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58116719A true JPS58116719A (ja) 1983-07-12
JPS6347254B2 JPS6347254B2 (enrdf_load_stackoverflow) 1988-09-21

Family

ID=16616788

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56212095A Granted JPS58116719A (ja) 1981-12-30 1981-12-30 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58116719A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS6347254B2 (enrdf_load_stackoverflow) 1988-09-21

Similar Documents

Publication Publication Date Title
JP4583709B2 (ja) 基板上の半導体膜領域のレーザー結晶化処理のための方法及びマスク投影装置
JPS58164219A (ja) 積層型半導体装置の製造方法
JPS60257511A (ja) 熱処理方法及びそれに用いる熱処理装置
JPS58116719A (ja) 半導体装置の製造方法
JPS6221207A (ja) 半導体装置の製造方法
JPH02177426A (ja) 半導体ウェハの製造方法
JPS61255022A (ja) 電子ビ−ム露光方法
JPH01260811A (ja) Ｓｏｉ結晶の形成方法
JPH0235451B2 (enrdf_load_stackoverflow)
JPS6276617A (ja) 半導体装置の製造方法
JPS6288249A (ja) イオン注入装置
JPH01103824A (ja) レーザアニール方法
JPH0136972B2 (enrdf_load_stackoverflow)
JPH01107514A (ja) 半導体装置
JPS627112A (ja) 半導体単結晶層の製造方法
JPS5831515A (ja) 半導体薄膜の製造方法
JPH0337729B2 (enrdf_load_stackoverflow)
JPH0732121B2 (ja) 半導体装置の製造方法
JPS60153114A (ja) 単結晶半導体層の形成方法
JPS627114A (ja) ビ−ムアニ−ル方法
JPS60105217A (ja) 半導体装置の製造方法
JPH0153240B2 (enrdf_load_stackoverflow)
JPH0377654B2 (enrdf_load_stackoverflow)
JPS59119822A (ja) 半導体装置の製造方法
JPS627113A (ja) 電子ビ−ムアニ−ル方法