JPS58114429A - 電子ビ−ム露光方法 - Google Patents

電子ビ−ム露光方法

Info

Publication number
JPS58114429A
JPS58114429A JP21089281A JP21089281A JPS58114429A JP S58114429 A JPS58114429 A JP S58114429A JP 21089281 A JP21089281 A JP 21089281A JP 21089281 A JP21089281 A JP 21089281A JP S58114429 A JPS58114429 A JP S58114429A
Authority
JP
Japan
Prior art keywords
pattern
electron beam
resist
resist layer
constant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21089281A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6246059B2 (enExample
Inventor
Yasuhide Machida
町田　泰秀
Shigeru Furuya
茂 古谷
Sumio Yamamoto
純生 山本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP21089281A priority Critical patent/JPS58114429A/ja
Publication of JPS58114429A publication Critical patent/JPS58114429A/ja
Publication of JPS6246059B2 publication Critical patent/JPS6246059B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
JP21089281A 1981-12-28 1981-12-28 電子ビ−ム露光方法 Granted JPS58114429A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21089281A JPS58114429A (ja) 1981-12-28 1981-12-28 電子ビ−ム露光方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21089281A JPS58114429A (ja) 1981-12-28 1981-12-28 電子ビ−ム露光方法

Publications (2)

Publication Number Publication Date
JPS58114429A true JPS58114429A (ja) 1983-07-07
JPS6246059B2 JPS6246059B2 (enExample) 1987-09-30

Family

ID=16596811

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21089281A Granted JPS58114429A (ja) 1981-12-28 1981-12-28 電子ビ−ム露光方法

Country Status (1)

Country Link
JP (1) JPS58114429A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60173833A (ja) * 1984-02-13 1985-09-07 Nippon Telegr & Teleph Corp <Ntt> パタン形成方法およびパタン形成装置
JPS60217626A (ja) * 1984-04-12 1985-10-31 Matsushita Electronics Corp レジストパタ−ンの現像制御方法
US4761560A (en) * 1984-01-25 1988-08-02 The United States Of America As Represented By The Secretary Of The Army Measurement of proximity effects in electron beam lithography
US7761839B2 (en) 2003-10-27 2010-07-20 International Business Machines Corporation Performance in model-based OPC engine utilizing efficient polygon pinning method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4761560A (en) * 1984-01-25 1988-08-02 The United States Of America As Represented By The Secretary Of The Army Measurement of proximity effects in electron beam lithography
JPS60173833A (ja) * 1984-02-13 1985-09-07 Nippon Telegr & Teleph Corp <Ntt> パタン形成方法およびパタン形成装置
JPS60217626A (ja) * 1984-04-12 1985-10-31 Matsushita Electronics Corp レジストパタ−ンの現像制御方法
US7761839B2 (en) 2003-10-27 2010-07-20 International Business Machines Corporation Performance in model-based OPC engine utilizing efficient polygon pinning method
US7774737B2 (en) 2003-10-27 2010-08-10 International Business Machines Corporation Performance in model-based OPC engine utilizing efficient polygon pinning method

Also Published As

Publication number Publication date
JPS6246059B2 (enExample) 1987-09-30

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