JPS6246059B2 - - Google Patents
Info
- Publication number
- JPS6246059B2 JPS6246059B2 JP21089281A JP21089281A JPS6246059B2 JP S6246059 B2 JPS6246059 B2 JP S6246059B2 JP 21089281 A JP21089281 A JP 21089281A JP 21089281 A JP21089281 A JP 21089281A JP S6246059 B2 JPS6246059 B2 JP S6246059B2
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- electron beam
- beam irradiation
- irradiation density
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Analytical Chemistry (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Electron Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21089281A JPS58114429A (ja) | 1981-12-28 | 1981-12-28 | 電子ビ−ム露光方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21089281A JPS58114429A (ja) | 1981-12-28 | 1981-12-28 | 電子ビ−ム露光方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58114429A JPS58114429A (ja) | 1983-07-07 |
| JPS6246059B2 true JPS6246059B2 (enExample) | 1987-09-30 |
Family
ID=16596811
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21089281A Granted JPS58114429A (ja) | 1981-12-28 | 1981-12-28 | 電子ビ−ム露光方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58114429A (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4761560A (en) * | 1984-01-25 | 1988-08-02 | The United States Of America As Represented By The Secretary Of The Army | Measurement of proximity effects in electron beam lithography |
| JPS60173833A (ja) * | 1984-02-13 | 1985-09-07 | Nippon Telegr & Teleph Corp <Ntt> | パタン形成方法およびパタン形成装置 |
| JPH0622196B2 (ja) * | 1984-04-12 | 1994-03-23 | 松下電子工業株式会社 | レジストパタ−ンの現像制御方法 |
| US7287239B2 (en) | 2003-10-27 | 2007-10-23 | International Business Machines Corporation | Performance in model-based OPC engine utilizing efficient polygon pinning method |
-
1981
- 1981-12-28 JP JP21089281A patent/JPS58114429A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58114429A (ja) | 1983-07-07 |
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