JPS58112976U - MOSFET life test equipment - Google Patents

MOSFET life test equipment

Info

Publication number
JPS58112976U
JPS58112976U JP978982U JP978982U JPS58112976U JP S58112976 U JPS58112976 U JP S58112976U JP 978982 U JP978982 U JP 978982U JP 978982 U JP978982 U JP 978982U JP S58112976 U JPS58112976 U JP S58112976U
Authority
JP
Japan
Prior art keywords
current
test equipment
life test
mosfet
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP978982U
Other languages
Japanese (ja)
Inventor
哲夫 鬼鞍
Original Assignee
日本電気株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本電気株式会社 filed Critical 日本電気株式会社
Priority to JP978982U priority Critical patent/JPS58112976U/en
Publication of JPS58112976U publication Critical patent/JPS58112976U/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来のMOSFETのドレイン電流−チヤンネ
ル部温度の関係の一例を示す特性図、第2図は本考案の
一実施例の回路図である。 1・・・・・・ドレイン電流検出用抵抗、2・曲・比較
回路、3・・・・・・スイッチ、4・・曲主電源、5・
・開基準電圧源、6・・・・・・被試験MO3FET、
7・・・・・・ゲート    。 電源。
FIG. 1 is a characteristic diagram showing an example of the relationship between drain current and channel temperature of a conventional MOSFET, and FIG. 2 is a circuit diagram of an embodiment of the present invention. 1... Resistor for drain current detection, 2... Song/comparison circuit, 3... Switch, 4... Song main power supply, 5.
・Open reference voltage source, 6...MO3FET under test,
7...Gate. power supply.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 被試験MO3FETのソースに接続されるドレイン電流
検出用抵抗と、この電流検出用抵抗両端の電位差を基準
電圧と比較する比較回路と、該比較回路の出力により前
記MO5FETのドレイン・ソース間に流れている電流
−を開閉するスイッチとを含むことを特徴とするMO3
FET寿命試験装置。
A drain current detection resistor connected to the source of the MO3FET under test, a comparison circuit that compares the potential difference across the current detection resistor with a reference voltage, and a current flowing between the drain and source of the MO5FET due to the output of the comparison circuit. An MO3 characterized in that it includes a current that is connected to a current source and a switch that opens and closes the current.
FET life test equipment.
JP978982U 1982-01-27 1982-01-27 MOSFET life test equipment Pending JPS58112976U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP978982U JPS58112976U (en) 1982-01-27 1982-01-27 MOSFET life test equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP978982U JPS58112976U (en) 1982-01-27 1982-01-27 MOSFET life test equipment

Publications (1)

Publication Number Publication Date
JPS58112976U true JPS58112976U (en) 1983-08-02

Family

ID=30022402

Family Applications (1)

Application Number Title Priority Date Filing Date
JP978982U Pending JPS58112976U (en) 1982-01-27 1982-01-27 MOSFET life test equipment

Country Status (1)

Country Link
JP (1) JPS58112976U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016118399A (en) * 2014-12-18 2016-06-30 株式会社シバソク Testing apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016118399A (en) * 2014-12-18 2016-06-30 株式会社シバソク Testing apparatus

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