JPS58112363A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS58112363A
JPS58112363A JP57226122A JP22612282A JPS58112363A JP S58112363 A JPS58112363 A JP S58112363A JP 57226122 A JP57226122 A JP 57226122A JP 22612282 A JP22612282 A JP 22612282A JP S58112363 A JPS58112363 A JP S58112363A
Authority
JP
Japan
Prior art keywords
substrate
film
temperature
glass
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57226122A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6318340B2 (enrdf_load_stackoverflow
Inventor
Makoto Matsui
誠 松井
Yasuhiro Shiraki
靖寛 白木
Yoshifumi Katayama
片山　良史
Toshihisa Tsukada
俊久 塚田
Eiichi Maruyama
丸山　「えい」一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57226122A priority Critical patent/JPS58112363A/ja
Publication of JPS58112363A publication Critical patent/JPS58112363A/ja
Publication of JPS6318340B2 publication Critical patent/JPS6318340B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP57226122A 1982-12-24 1982-12-24 半導体装置の製造方法 Granted JPS58112363A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57226122A JPS58112363A (ja) 1982-12-24 1982-12-24 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57226122A JPS58112363A (ja) 1982-12-24 1982-12-24 半導体装置の製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP9156679A Division JPS5617083A (en) 1979-07-20 1979-07-20 Semiconductor device and its manufacture

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP58161852A Division JPS5972165A (ja) 1983-09-05 1983-09-05 半導体装置

Publications (2)

Publication Number Publication Date
JPS58112363A true JPS58112363A (ja) 1983-07-04
JPS6318340B2 JPS6318340B2 (enrdf_load_stackoverflow) 1988-04-18

Family

ID=16840180

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57226122A Granted JPS58112363A (ja) 1982-12-24 1982-12-24 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58112363A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03135525A (ja) * 1983-09-20 1991-06-10 Seiko Epson Corp 固体イメージセンサーの製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03135525A (ja) * 1983-09-20 1991-06-10 Seiko Epson Corp 固体イメージセンサーの製造方法

Also Published As

Publication number Publication date
JPS6318340B2 (enrdf_load_stackoverflow) 1988-04-18

Similar Documents

Publication Publication Date Title
EP0023021B1 (en) Semiconductor device and method of manufacturing the same
CN101221994B (zh) 高灵敏度光传感元件和使用该元件的光传感装置
US4598305A (en) Depletion mode thin film semiconductor photodetectors
EP0543951B1 (en) Solid state electromagnetic radiation detector
JP2838318B2 (ja) 感光装置及びその作製方法
US5273910A (en) Method of making a solid state electromagnetic radiation detector
US7176495B2 (en) Optical sensor
JPH04286361A (ja) 固体撮像装置
US20200006412A1 (en) Methods and apparatus for image sensor semiconductors
JPH04261071A (ja) 光電変換装置
JPS58112363A (ja) 半導体装置の製造方法
TWI759980B (zh) 光電感測器
JPH02363A (ja) 光電変換装置
JPH07254693A (ja) 固体撮像装置及びその製造方法
US6787808B1 (en) Optical sensor
JPS5972165A (ja) 半導体装置
JPH06342899A (ja) 固体撮像装置及びその製造方法
JPH0584065B2 (enrdf_load_stackoverflow)
JPH04261070A (ja) 光電変換装置
JP3207448B2 (ja) 画像読み取り装置
JPH08204165A (ja) 積層型固体撮像装置
US20160093660A1 (en) Semiconductor apparatus and method of manufacturing semiconductor apparatus
JPH04286160A (ja) 光検知器及びその製造方法
JPH0983010A (ja) 赤外線受光装置およびその製造方法
JP2505848B2 (ja) 光導電型イメ―ジセンサ