JPS6318340B2 - - Google Patents

Info

Publication number
JPS6318340B2
JPS6318340B2 JP57226122A JP22612282A JPS6318340B2 JP S6318340 B2 JPS6318340 B2 JP S6318340B2 JP 57226122 A JP57226122 A JP 57226122A JP 22612282 A JP22612282 A JP 22612282A JP S6318340 B2 JPS6318340 B2 JP S6318340B2
Authority
JP
Japan
Prior art keywords
substrate
film
glass
temperature
polycrystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57226122A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58112363A (ja
Inventor
Makoto Matsui
Yasuhiro Shiraki
Yoshifumi Katayama
Toshihisa Tsukada
Eiichi Maruyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57226122A priority Critical patent/JPS58112363A/ja
Publication of JPS58112363A publication Critical patent/JPS58112363A/ja
Publication of JPS6318340B2 publication Critical patent/JPS6318340B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP57226122A 1982-12-24 1982-12-24 半導体装置の製造方法 Granted JPS58112363A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57226122A JPS58112363A (ja) 1982-12-24 1982-12-24 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57226122A JPS58112363A (ja) 1982-12-24 1982-12-24 半導体装置の製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP9156679A Division JPS5617083A (en) 1979-07-20 1979-07-20 Semiconductor device and its manufacture

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP58161852A Division JPS5972165A (ja) 1983-09-05 1983-09-05 半導体装置

Publications (2)

Publication Number Publication Date
JPS58112363A JPS58112363A (ja) 1983-07-04
JPS6318340B2 true JPS6318340B2 (enrdf_load_stackoverflow) 1988-04-18

Family

ID=16840180

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57226122A Granted JPS58112363A (ja) 1982-12-24 1982-12-24 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58112363A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03135525A (ja) * 1983-09-20 1991-06-10 Seiko Epson Corp 固体イメージセンサーの製造方法

Also Published As

Publication number Publication date
JPS58112363A (ja) 1983-07-04

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