JPS58108220A - Epoxy resin composition for encapsulation of semiconductor - Google Patents

Epoxy resin composition for encapsulation of semiconductor

Info

Publication number
JPS58108220A
JPS58108220A JP20648381A JP20648381A JPS58108220A JP S58108220 A JPS58108220 A JP S58108220A JP 20648381 A JP20648381 A JP 20648381A JP 20648381 A JP20648381 A JP 20648381A JP S58108220 A JPS58108220 A JP S58108220A
Authority
JP
Japan
Prior art keywords
epoxy resin
rubber
composition
resin
resin composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20648381A
Other languages
Japanese (ja)
Inventor
Takeshi Hattori
毅 服部
Takaaki Fukai
深井 孝彰
Hiromitsu Takanohashi
弘光 高野橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Gas Chemical Co Inc
Original Assignee
Mitsubishi Gas Chemical Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Gas Chemical Co Inc filed Critical Mitsubishi Gas Chemical Co Inc
Priority to JP20648381A priority Critical patent/JPS58108220A/en
Publication of JPS58108220A publication Critical patent/JPS58108220A/en
Pending legal-status Critical Current

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  • Compositions Of Macromolecular Compounds (AREA)
  • Epoxy Resins (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE:To prepare the titled resin composition having excellent heat resistance and crack resistance, by mixing a specific amount of rubber to a composition composed of a novolak epoxy resin, a phenolic novolak resin curing agent and powdery silica filler. CONSTITUTION:The objective composition is prepared by adding 0.05-10(wt)%, preferbly 0.1-5% rubber (natural or synthetic rubber having rubber elasticity and preferably having a diameter of 0.5-50mu) to an epoxy resin composition containing, as essential components, a novolak-type epoxy resin as the epoxy resin, a phenolic novolak resin as a curing agent and silica powder as a filler. The amount of the silica powder is 50-80% of the composition.

Description

【発明の詳細な説明】 本発明は半導体封止用エポキシ樹脂組成物に関するもの
であり、詳しくは、エポキシ樹脂としてノボラック型エ
ポキシ樹脂、硬化剤としてフェノールノボラック樹脂、
および充填剤としてシリカ粉末を組成物中IO〜10重
量tsヲ必須成分としてなるエポキシ樹脂組成物に、ゴ
ムを0.01〜io重量%t−混合してなる半導体封止
用エポキシ樹脂組成物で69耐熱性を保持し、かつ耐ク
ラツク性の優れ次ものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an epoxy resin composition for semiconductor encapsulation, and more specifically, the epoxy resin is a novolak type epoxy resin, the curing agent is a phenol novolac resin,
An epoxy resin composition for semiconductor encapsulation is prepared by mixing 0.01 to 10% by weight of rubber with an epoxy resin composition containing 10 to 10% by weight of silica powder as an essential component as a filler. 69 heat resistance and excellent crack resistance.

半導体封止用エポキシ樹脂組成物はその電気特性、耐熱
性、耐水性等の面から、多官能エポキシ化合物、硬化剤
としてのフェノール類、充填剤としてのシリカ粉末、及
び硬化触媒を必須成分とすることは広く知られている。
Epoxy resin compositions for semiconductor encapsulation contain a polyfunctional epoxy compound, phenols as a curing agent, silica powder as a filler, and a curing catalyst as essential components in terms of electrical properties, heat resistance, water resistance, etc. This is widely known.

近年半導体素子は大型化高集積化の傾向を強め、従来の
エポキシ樹脂組成物で半導体素子を封止した場合、ヒー
トサイクルテス)1行なうと封止樹脂にクラック発生が
起きたり、千ツブにクラックが生ずるなど半導体部品の
信頼性を低下させるという問題が生じている。これは耐
熱性、耐水性という観点から開発されてき九現状の多官
能エポキシ樹脂、フェノール類、シリカという半導体封
止用のエポキシ樹脂組成物の硬化物は非常にか友く、可
撓性に欠けるために起因するものである。
In recent years, semiconductor devices have become larger and more highly integrated, and when semiconductor devices are encapsulated with conventional epoxy resin compositions, cracks occur in the encapsulating resin or even cracks occur after a heat cycle test (1). A problem has arisen in which the reliability of semiconductor components is lowered, such as by the occurrence of. This has been developed from the viewpoint of heat resistance and water resistance.Currently, cured products of epoxy resin compositions for semiconductor encapsulation, such as multifunctional epoxy resins, phenols, and silica, are very fragile and lack flexibility. This is due to the fact that

エポキシ樹脂に可撓性を付与するには可撓性付与剤の添
加という方法が行なわれている。例えば、エポキシ樹脂
用回帰性付与剤として知られるDow社@ DMR7J
t 、  ah・11社製FipikOte17/ [
プラスチックマテリアル1j12r111(7弘)参考
]轡を添加すると、エポキシ樹脂の可撓性は改善される
が耐熱性の低下が大きく高度の信頼性を要求される半導
体封止用樹脂としては不適当である。
A method of imparting flexibility to epoxy resins is to add a flexibility imparting agent. For example, Dow Company @ DMR7J, which is known as a regression property imparting agent for epoxy resins.
FipikOte17/ made by t, ah・11
Plastic Material 1j12r111 (7 Hiroshi) Reference] Adding soot improves the flexibility of epoxy resin, but the heat resistance decreases significantly, making it unsuitable as a resin for semiconductor encapsulation that requires a high degree of reliability. .

本発明者らはかかる問題点に関して研究を進め次結果、
半導体對止材料として耐熱性を保持し、耐クラツク性の
優れたエポキシ樹脂組成物tl−見い出し本発明を完成
させ友ものである。
The present inventors have conducted research on such problems, and the following results are obtained.
An epoxy resin composition which maintains heat resistance and has excellent crack resistance as a semiconductor blocking material has been completed and is a companion to the present invention.

以下に本発明の構成について説明する。The configuration of the present invention will be explained below.

本発明で使用されるノボラック型エポキシ樹脂、フェノ
ールノボラック樹脂、シリカ粉末は従来から知られてい
るものである。
The novolac type epoxy resin, phenol novolac resin, and silica powder used in the present invention are conventionally known.

本発明で使用されるゴムは天然物1合成物。The rubber used in the present invention is a natural product and a synthetic product.

ゴム、アクリルコ゛ム、ウレタンコ゛ム、シリコーンゴ
ム、ふっ素ゴム、エチレン−プロピレンゴム、王手しン
ー酢ビゴ′ム、アルフィンゴム、ポリエステルゴム、天
然ゴム、インプレンゴム、ス千しンーブタジエンゴム、
ニド11ルゴム、ブタジェンゴム等があげられ、又ゴム
成分含有熱可塑性樹脂、例えばABC樹脂、ハイインパ
クトホリス千しン樹脂など、も添付す゛ることか出きる
。これらのゴムは1種又は一種以上ケ用いることが出宋
る。
Rubber, acrylic comb, urethane comb, silicone rubber, fluororubber, ethylene-propylene rubber, white vinegar rubber, alphine rubber, polyester rubber, natural rubber, imprene rubber, ethylene-butadiene rubber,
Nitrogen rubber, butadiene rubber, etc. may be used, and thermoplastic resins containing rubber components, such as ABC resin, high impact Hollythin resin, etc., may also be added. One or more of these rubbers may be used.

ゴムの組成物中9含有量は0.01〜10 II、で好
ましくは0./ 、 3%が望ましい。組成物中のゴム
量が0.01%未満だと半導体封止材料としての耐クラ
ツク性が改斡されず、io%以上だと耐水性が低下する
ので好ましくない。又、ゴムの分散状明は粒子径で0.
/ −700μ、より好ましくはO,j〜topであり
、0.7μ以下だと耐クラツク性が得られず100μ以
上だと成型性が低下するので好ましくない。
The content of 9 in the rubber composition is 0.01 to 10 II, preferably 0.01 to 10 II. /, 3% is desirable. If the amount of rubber in the composition is less than 0.01%, the crack resistance as a semiconductor sealing material will not be improved, and if it is more than io%, the water resistance will decrease, which is not preferable. In addition, the particle size of the rubber dispersion is 0.
/ -700μ, more preferably O,j~top; if it is less than 0.7μ, crack resistance will not be obtained, and if it is more than 100μ, moldability will deteriorate, which is not preferred.

以上のような本発明の半導体封止用エポキシ樹脂組成物
には、必要に応じてシランカップリング剤、離型剤、顔
料%難燃剤を添加することも可昨である。さらに、耐熱
性、耐水性、成型性を低下させない8i#にビスフェノ
ール型ヤ脂環式のエポキシ樹脂を添加することも出来、
酸無水物、アミン類等の硬化剤も併用することも出来る
It is also possible to add a silane coupling agent, a mold release agent, and a pigment-based flame retardant to the epoxy resin composition for semiconductor encapsulation of the present invention as described above, if necessary. Furthermore, bisphenol type and alicyclic epoxy resin can be added to 8i# without reducing heat resistance, water resistance, and moldability.
Curing agents such as acid anhydrides and amines can also be used in combination.

以下実施例、比較例で具体的に説明する。This will be specifically explained below using Examples and Comparative Examples.

V!鳩何例 1レゾールノボラック型エポキシ樹脂(商品名; [0
NJJOI、も、住友化学工業■獅)700部とスチレ
ン・ブタジェンゴム(商品名;J日R/100.日本合
成ゴム■製)71部とを加熱混合し、ゴムをエポキシ樹
脂中に分散させた後。
V! Hato Case 1 Resol novolak type epoxy resin (product name; [0
After heating and mixing 700 parts of NJJOI (Sumitomo Chemical Co., Ltd.) and 71 parts of styrene-butadiene rubber (trade name: J-NichiR/100. manufactured by Nippon Synthetic Rubber) and dispersing the rubber in the epoxy resin. .

冷却、粉砕してゴム変性エポキシ樹脂11)を得た。The mixture was cooled and pulverized to obtain a rubber-modified epoxy resin 11).

この樹脂をその他・の原料t−flAI−8に示す割合
で混合し念後熱ロールで加熱混練し、冷却して封止材料
を得た。この封止材料中のゴム量は2.6重量%であり
、又ゴムの平均粒径は30μであった。この材料を用い
てテストピースを成型し、さらに/7j111.j時間
のポストキュアーし友ものにつ色、ガラス転移温11t
−測定し次。又μ0pin工01l−成型し、ポストキ
ュアーした後l!θ℃のシリコンオイル960秒、液体
9m中60秒工Ct−浸漬するというヒート廿イグルテ
ストを行ないICの封止樹脂表面に々ラックが発生する
までのサイクル数を調べた。さらに成型後ポストキュア
ーし次テストピースを/J/℃2気圧の水蒸気圧力釜中
で100時間の加+I処溝を行ない、この処理前後の体
積抵抗率を調べ念。
This resin was mixed in the proportion shown in the other raw materials t-flAI-8, heated and kneaded with a hot roll, and cooled to obtain a sealing material. The amount of rubber in this sealing material was 2.6% by weight, and the average particle size of the rubber was 30μ. A test piece was molded using this material, and further /7j111. J hours of post-cure, yellow color, glass transition temperature 11t
-Measure and then. Also μ0pin process 01l - after molding and post-curing! A heat cycle test was conducted in which the IC was immersed in silicone oil at θ°C for 960 seconds and in 9 m of liquid for 60 seconds to determine the number of cycles until a rack was generated on the surface of the sealing resin of the IC. Furthermore, after post-curing after molding, the test piece was subjected to a +I treatment for 100 hours in a steam pressure cooker at /J/°C and 2 atm, and the volume resistivity was examined before and after this treatment.

これらの結果1に夙/*に示した。These results are shown in 1 with a *.

スチレン・ブタジェンゴム(商品名;JsRizoo、
日本合成ゴム−製)3部と紮加熱混合し、′瘤?使って
の第1岩に示す割合でその他の原料を混合し、ゴム言有
量00j4t  重量%、ゴム平均粒径−20μの封止
材料を得た。種々の試験については5j!施例/と同様
に行なつtoこの結果【第1表に示した。
Styrene-butadiene rubber (product name: JsRizoo,
Mix 3 parts of Nippon Synthetic Rubber with heat and heat. Other raw materials were mixed in the proportions shown in the first rock used to obtain a sealing material having an estimated rubber content of 00j4t% by weight and a rubber average particle size of -20μ. 5j for various exams! The procedure was carried out in the same manner as in Example 1 and the results are shown in Table 1.

実施例3 スチレン・ブタジェンゴムに替えて二) +1ルゴム(
商品名; 16HJJO8,日本合成ゴム■製)11部
を用い実施例1と同様にタレソールノボラックエポキシ
樹脂100部に混合し、ゴム変性エポキシ樹脂13:を
得た。これを用い第1表に下す割合で他の原料と混合加
熱混線、冷却してゴム含量2.6重量鳴、ゴム平均粒径
/jμの封止材料を得、実施例1と同様の測定を行なっ
た。
Example 3 In place of styrene-butadiene rubber (2) +1 rubber (
11 parts of the product (trade name: 16HJJO8, manufactured by Japan Synthetic Rubber ■) were mixed with 100 parts of Talesol novolak epoxy resin in the same manner as in Example 1 to obtain rubber modified epoxy resin 13:. This was mixed with other raw materials in the proportions shown in Table 1, heated, mixed, and cooled to obtain a sealing material with a rubber content of 2.6 weight and an average rubber particle size/jμ, and the same measurements as in Example 1 were carried out. I did it.

この結果を第1sK示した。This result is shown in the first sK.

比較fIl/、コ 実施例1においてゴム変性エポキシ樹脂の調整に用いる
ゴムの添加1po、i部及び10部に変えてゴム変性エ
ポキシ樹脂141.151を得、これ倉用いてtR/H
の組成割合で同様に作成した封止材料によりテストピー
スを作製した。これらt用いて同様の試験を行なった結
果を駆1表に示した。
Comparative fIl/, Rubber modified epoxy resin 141.151 was obtained by replacing the addition of 1po, i part and 10 parts of the rubber used for the preparation of the rubber modified epoxy resin in Example 1, and using this stock, tR/H
A test piece was prepared using a sealing material prepared in the same manner as above. Similar tests were conducted using these T and the results are shown in Table 1.

比較例J エポキシ樹脂用可撓性付与剤DFiR7J4(Dot社
製)を用い別弾(!(の組成割合で混合し次原料を熱ロ
ールにて加熱混線後冷却破砕し封止材料を得た。この封
止材料で実施例1と同様に成型後試験會行なつ逢結果を
yR1表に示した。
Comparative Example J A flexibility imparting agent for epoxy resin, DFiR7J4 (manufactured by Dot), was mixed at a composition ratio of (!), and the raw materials were heated with a hot roll, mixed, cooled and crushed to obtain a sealing material. A post-molding test session was conducted using this sealing material in the same manner as in Example 1, and the results are shown in Table yR1.

比較例参 エポキシ樹脂用可撓性付与剤Epikote/ 7/(
シェル社製)を用い、第1表の組成割合で混合した原料
で比較例3と同様にして封止材料を得念。
Comparative Example Flexibility imparting agent for epoxy resin Epikote/7/(
A sealing material was prepared in the same manner as in Comparative Example 3 using raw materials mixed at the composition ratios shown in Table 1.

この封止材料で実施例/と同様に成型後試験を行なった
結果を第1表に示し之。
A post-molding test was conducted using this sealing material in the same manner as in Example 1, and the results are shown in Table 1.

比較例! ゴム及び可撓性付与剤を用いないで、Ilm、 / *
の組成で作製した封止利料について実施例1と同様な成
型、試験をした結果t−第1表に示し次。
Comparative example! Without rubber and flexibilizing agents, Ilm, / *
The sealed material prepared with the composition was molded and tested in the same manner as in Example 1, and the results are shown in Table 1.

手  続  補  正  書 く自発)1. 事件の表
示 昭和56年特許願第206483号 2 発明の名称 半導体封止用エポキシ樹脂組成物 λ 補正をする者 事件との関係 (特許出願人) 住所(〒100)東京都千代田区丸の内二丁目5番2号
表のりづくを下記括弧内に補正する。
Procedural amendment (written voluntarily) 1. Display of the case 1982 Patent Application No. 206483 2 Name of the invention Epoxy resin composition for semiconductor encapsulation λ Person making the amendment Relationship to the case (Patent applicant) Address (100) 2-5 Marunouchi, Chiyoda-ku, Tokyo No. 2 Table No. 2 is corrected in the parentheses below.

Claims (1)

【特許請求の範囲】[Claims] エポキシ樹脂としてノボラック型エポキシ樹脂硬化剤と
してフェノールノボラック樹脂および充填剤としてシリ
カ粉末を組成物中!O−l“O重量嘔を必須成分として
なるエポキシ樹脂組成物に、ゴムYrO0OJ−10重
量−混合してなる半導体封止用エポキシ樹脂組成物。
Novolac type epoxy resin as epoxy resin Phenol novolac resin as hardener and silica powder as filler in the composition! An epoxy resin composition for semiconductor encapsulation, which is obtained by mixing rubber YrO0OJ-10 by weight with an epoxy resin composition containing O-l"O by weight as an essential component.
JP20648381A 1981-12-21 1981-12-21 Epoxy resin composition for encapsulation of semiconductor Pending JPS58108220A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20648381A JPS58108220A (en) 1981-12-21 1981-12-21 Epoxy resin composition for encapsulation of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20648381A JPS58108220A (en) 1981-12-21 1981-12-21 Epoxy resin composition for encapsulation of semiconductor

Publications (1)

Publication Number Publication Date
JPS58108220A true JPS58108220A (en) 1983-06-28

Family

ID=16524117

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20648381A Pending JPS58108220A (en) 1981-12-21 1981-12-21 Epoxy resin composition for encapsulation of semiconductor

Country Status (1)

Country Link
JP (1) JPS58108220A (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6036527A (en) * 1983-08-09 1985-02-25 Toshiba Chem Corp Sealing resin composition
JPS6110260A (en) * 1984-06-26 1986-01-17 Matsushita Electric Ind Co Ltd Manufacture of resin-sealed type electronic component
JPS61159752A (en) * 1985-01-07 1986-07-19 Hitachi Ltd Semiconductor resin package
JPS61221223A (en) * 1985-03-27 1986-10-01 Toshiba Corp Epoxy resin composition for sealing semiconductor
JPS6222825A (en) * 1985-07-23 1987-01-31 Toshiba Chem Corp Sealing resin composition
JPS62270617A (en) * 1986-05-20 1987-11-25 Mitsui Toatsu Chem Inc Resin composition for semiconductor sealing
JPS62273222A (en) * 1986-05-21 1987-11-27 Mitsui Toatsu Chem Inc Resin composition for sealing semiconductor
JPS63225617A (en) * 1987-03-14 1988-09-20 Toshiba Chem Corp Sealing resin composition and its production
JPS63225618A (en) * 1987-03-14 1988-09-20 Toshiba Chem Corp Sealing resin composition and its production
JPS63251419A (en) * 1987-04-08 1988-10-18 Toray Ind Inc Resin composition for sealing semiconductor
JPS6484739A (en) * 1987-09-28 1989-03-30 Nitto Denko Corp Resin sealed semiconductor device
US5114994A (en) * 1990-03-23 1992-05-19 Mitsubishi Denki Kabushiki Kaisha Epoxy resin composition for sealing semiconductor
JPH05178965A (en) * 1992-04-27 1993-07-20 Toray Ind Inc Resin composition for sealing semiconductor

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6036527A (en) * 1983-08-09 1985-02-25 Toshiba Chem Corp Sealing resin composition
JPH0330615B2 (en) * 1983-08-09 1991-05-01 Toshiba Chem Prod
JPS6110260A (en) * 1984-06-26 1986-01-17 Matsushita Electric Ind Co Ltd Manufacture of resin-sealed type electronic component
JPS61159752A (en) * 1985-01-07 1986-07-19 Hitachi Ltd Semiconductor resin package
JPS6325608B2 (en) * 1985-03-27 1988-05-26 Tokyo Shibaura Electric Co
JPS61221223A (en) * 1985-03-27 1986-10-01 Toshiba Corp Epoxy resin composition for sealing semiconductor
JPS6222825A (en) * 1985-07-23 1987-01-31 Toshiba Chem Corp Sealing resin composition
JPH0513185B2 (en) * 1985-07-23 1993-02-19 Toshiba Chem Prod
JPS62270617A (en) * 1986-05-20 1987-11-25 Mitsui Toatsu Chem Inc Resin composition for semiconductor sealing
JPH0531883B2 (en) * 1986-05-20 1993-05-13 Mitsui Toatsu Chemicals
JPS62273222A (en) * 1986-05-21 1987-11-27 Mitsui Toatsu Chem Inc Resin composition for sealing semiconductor
JPH0531884B2 (en) * 1986-05-21 1993-05-13 Mitsui Toatsu Chemicals
JPS63225617A (en) * 1987-03-14 1988-09-20 Toshiba Chem Corp Sealing resin composition and its production
JPS63225618A (en) * 1987-03-14 1988-09-20 Toshiba Chem Corp Sealing resin composition and its production
JPS63251419A (en) * 1987-04-08 1988-10-18 Toray Ind Inc Resin composition for sealing semiconductor
JPS6484739A (en) * 1987-09-28 1989-03-30 Nitto Denko Corp Resin sealed semiconductor device
US5114994A (en) * 1990-03-23 1992-05-19 Mitsubishi Denki Kabushiki Kaisha Epoxy resin composition for sealing semiconductor
JPH05178965A (en) * 1992-04-27 1993-07-20 Toray Ind Inc Resin composition for sealing semiconductor

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