JPS58100411A - Method of forming ferromagnetic film - Google Patents

Abstract

PURPOSE:To remove magnetic anistropy and to obtain excellent magnetic characteristics by a method wherein a ferromagnetic film is produced in the rotating magnetic field through evaporation or sputtering. CONSTITUTION:A magnet 5 mounted to a yoke 4 directly coupled to a rotary shaft is rotated round a substrate holder 2 to apply the rotating magnetic field in parallel to the plane surface of a substrate 1. At the time of sputtering, after evacuating the interior of a vacuum container to 3X10<-7> Torr, As gas is introduced from an inlet port 6 to reach 2X10<-2> Torr. Pre-sputtering is first made for 30min and then main sputtering is performed on the glass substrate. The sputter film thus attained had a thickness of about 15mum.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for forming a ferromagnetic film. In recent years, research has been actively conducted on the production of ferromagnetic films by methods such as the S.G.T. method and the vapor deposition method. However, the magnetic properties of the ferromagnetic film obtained in this way are generally not as good as those of the bulk material. This is thought to be due to the difference in thermal expansion coefficients between the substrate and the ferromagnetic film or other causes that cause residual strain in the film, degrading the characteristics. However, even a ferromagnetic film with almost zero magnetostriction does not exhibit excellent magnetic properties due to some kind of magnetic anisotropy. The present invention makes it possible to remove the aforementioned magnetic anisotropy caused by unknown causes and obtain excellent magnetic properties by depositing or snorting a ferromagnetic film in a rotating magnetic field. It is something.

At present, ferromagnetic films manufactured by vapor deposition or star-stripping methods include flat malloy and sendust.

There are amorphous alloys, etc. Of these, the rotating magnetic field sintering method of the present invention is particularly effective for amorphous alloys.
Malloy and Sendust in that order. Further, as a result of experiments, it has been found that the thin film forming method of the present invention is particularly effective for metal-metal alloys having a high Curie point Tc among amorphous alloys. Among these, alloys that are easily amorphous and have excellent wear resistance are alloys whose main component is Co, which is represented by the following composition.

ColMbTcXd M = Fe + Ni, CroMo yW + Mn
One or more metals T = TtaZr*Hf +Nb + One or more metals X = One or more halves of Si, B, C, At, Ge However, in order for the above alloy system to become amorphous, 70≦a≦
It needs to be 95.5 x 20. T is a metal with a high ability to form an amorphous state, and depending on what is selected for T, the additive metal M to be added to adjust the magnetostriction to almost zero is determined.For example, when T=Ti, M is hardly needed, but when T= In the case of Zr, Ni r Cr * Mo mW is valid as M, and T=
In the case of Nb, Fs 2Mn is effective, but in any case, in order to make the magnetostriction almost zero, it is desirable that it be 0 or less. The inventive method of snow-cuttering in a rotating magnetic field is effective only for alloys with low magnetostriction, and materials with high magnetostriction suffer too much deterioration of their properties due to strain, so the method of the present invention does not affect the magnetic properties at all. No improvement. -X is essentially necessary, but adding a small amount of it can raise the crystallization temperature of the amorphous alloy, so it is effective in obtaining stable magnetic properties. It is made of elements.

However, if more than 1e is added, the abrasion resistance will be extremely deteriorated and the abrasion resistance will be less than that of sendust, so it is desirable that it be 0d(10).

Hereinafter, the effects of the present invention will be described with reference to specific examples. Example 1 Nocmaroy, Sendust, amorphous alloy COB oMoj oZ
A Snockter film with r 1° was prepared. In Fig. 1, 1 is a target, 2 is a substrate holder, and 3 is a substrate, and a magnet 5 attached to a yoke 4 directly connected to the rotation axis rotates around the substrate holder so that a rotating magnetic field is applied parallel to the plane of the substrate. It has become. For sputtering, after setting the inside of the vacuum container to 3 x 10-' Torr, Ar gas was introduced through the inlet 6, and the pressure was set to 2 x 10-2 Torr.
After press battering for 30 minutes, main sputtering was performed on the glass substrate. The strength of the rotating magnetic field was H"1000e, and the rotational speed ω was 1100r-p-.For comparison, the magnet was removed and H = O, and the rotation was stopped and the direction was set to H = 2000e. The obtained sulfur base film was approximately 15 μm thick, but the substrate was processed by ultrasonic processing to a diameter of 8 m in outer diameter and 4 m in inner diameter.
The wire was wound into a ring shape of m, and the magnetic properties were measured. The results are shown in Table-1 and Table-2.

Table-1 Table-2 <Example 2> Using the same method as in Example 1, H"=2000e, ω=1
S/ of various amorphous alloys in a rotating magnetic field of 0 Or, p, m
I did fP tutu. The results are shown below.

Table 3 From the experimental results shown in Table 3, the method of the present invention is based on SiF8
No significant effects were shown for 788i10B12 or Fe4oNi4oP14B6.

<Example 3> After setting the inside of the vacuum container to 3 x 10-' Torr, Ar was introduced and the pressure was set to 2 x 10'' Torr, and a press batter was applied for 30 minutes. By varying the number of layers, we investigated the effects on the film.

/ In the experiment, an amorphous alloy film of Fe4CO77Nb14Bs was prepared and its magnetic permeability at 1 kHz was investigated. The results are shown below.

Table 4 As can be seen from the experimental results shown in Table 4, the higher the rotation speed and the stronger the magnetic field strength, the greater the effect.

<Example 4> A thin film production experiment similar to that in Example 1 was conducted by a vapor deposition method at 2×1 O −5 Torr in an electron beam evaporation apparatus. The results were similar to Example 1.

As can be seen from the above, the method of forming a ferromagnetic film of the present invention is extremely effective in producing a ferromagnetic film with excellent magnetic properties by the scattering method.

[Brief explanation of drawings]

The figure is a diagram schematically showing one type of setter according to the present invention. 1... Tarr, ), 2... Board holder, 3...
・Substrate, 4...Yoke, 5...Magnet, 6...Ar
Gas inlet, 7...exhaust port, 8...shutter.

Claims (2)

[Claims] (1) A ferromagnetic film is formed on the substrate by solidifying the gas under a magnetic field that is parallel to the substrate surface and rotating within the substrate surface in an apparatus that solidifies the gas to form a thin film on the substrate. A method for forming a ferromagnetic film characterized by: (2) The atomic composition of the ferromagnetic film to be formed is ColMb
The method for forming a ferromagnetic film according to claim 1, wherein the ferromagnetic film is an amorphous alloy represented by TcXd. However, M ” Fe + Nl r Cr * Mo
One or more metals selected from the group consisting of rWrMn, T=Tt, ZrrHf, N
b, one or more metals selected from Ta, one or more metalloids selected from X"Si, B, C, At, Ge, 70≦a≦95, 0≦b≦20,5 ≦C≦20, 0≦d
≦10゜a + b + c + d = 1 0 0
(3) A method for forming a ferromagnetic film according to claim (1), characterized in that a star-strike method is used as the thin film forming method.