JPH0192358A - Manufacture of thin amorphous film - Google Patents
Manufacture of thin amorphous filmInfo
- Publication number
- JPH0192358A JPH0192358A JP19805788A JP19805788A JPH0192358A JP H0192358 A JPH0192358 A JP H0192358A JP 19805788 A JP19805788 A JP 19805788A JP 19805788 A JP19805788 A JP 19805788A JP H0192358 A JPH0192358 A JP H0192358A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- amorphous thin
- substrate
- magnetic
- magnetic field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 230000005291 magnetic effect Effects 0.000 claims abstract description 46
- 238000004544 sputter deposition Methods 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 13
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 6
- 229910052742 iron Inorganic materials 0.000 claims abstract description 5
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 5
- 239000010409 thin film Substances 0.000 claims description 45
- 229910000808 amorphous metal alloy Inorganic materials 0.000 claims description 4
- 239000010408 film Substances 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 abstract description 10
- 239000000956 alloy Substances 0.000 abstract description 10
- 230000035699 permeability Effects 0.000 abstract description 10
- 239000011162 core material Substances 0.000 abstract description 2
- 238000007740 vapor deposition Methods 0.000 abstract 2
- 239000013077 target material Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 229910052755 nonmetal Inorganic materials 0.000 description 3
- 229910052761 rare earth metal Inorganic materials 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 230000005415 magnetization Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910000942 Elinvar Inorganic materials 0.000 description 1
- 229910001374 Invar Inorganic materials 0.000 description 1
- 238000005280 amorphization Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 238000004017 vitrification Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Thin Magnetic Films (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はスパッタ蒸着法により作製する非晶質薄膜の製
造方法に関し、特に回転磁場中でスパッタ蒸着すること
により、磁気異方性が小さく、低保磁力で高初期透磁率
を有する非晶質薄膜の製造方法に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for manufacturing an amorphous thin film by sputter deposition, and in particular, by sputter deposition in a rotating magnetic field, magnetic anisotropy is small. The present invention relates to a method for producing an amorphous thin film having low coercive force and high initial magnetic permeability.
〔従来の技術１
ある種の金属あるいは合金をスパッタ蒸着することによ
り、原子構造で長範囲規則度のない非晶質構造を得るこ
とができる。この方法により得られる従来の非晶質薄膜
は、主にＢ、Ｃ，Ｓｉなどの非金属元素を基とする金属
−非金属系合金またはバブル磁性材料や光磁気磁性材料
に有用な希土類元素を基とする合金系薄膜よりなってい
る。しかし、これらの非晶質合金系薄膜は機械的、磁気
的、電気的特性の劣化をもたらす熱安定性の点でいまだ
実用上十分とはいえない。さらに、非晶質化元素である
Ｂ、Ｃ，Ｓｉなどの非金属元素を基とする金属−非金属
系合金薄膜はスパッタ蒸着時に導入される磁気異方性の
ために、高い保磁力と低い透磁率を示し実用上問題があ
った。[Prior Art 1] By sputter-depositing a certain metal or alloy, an amorphous structure with no long-range regularity in atomic structure can be obtained. Conventional amorphous thin films obtained by this method mainly contain metal-nonmetal alloys based on nonmetallic elements such as B, C, and Si, or rare earth elements useful for bubble magnetic materials and magneto-optical magnetic materials. It consists of a base alloy thin film. However, these amorphous alloy thin films are still insufficient for practical use in terms of thermal stability, which causes deterioration of mechanical, magnetic, and electrical properties. Furthermore, metal-nonmetal alloy thin films based on nonmetallic elements such as B, C, and Si, which are amorphous elements, have a high coercive force and a low It exhibited magnetic permeability, which was a practical problem.
上述したごとく、従来の非晶質磁性薄膜をスパッタ蒸着
法で製造する方法において、磁気異方性が小さく、低保
磁力で高透磁率の非晶質磁性薄膜を得ることができなか
った。As described above, in the conventional method of manufacturing an amorphous magnetic thin film by sputter deposition, it was not possible to obtain an amorphous magnetic thin film with small magnetic anisotropy, low coercive force, and high magnetic permeability.
本発明者らは、従来技術における問題点を解消するため
に、非晶質薄膜のガラス化（非晶質化）元素として従来
の非晶質合金系薄膜の構成元素である非金属元素および
希土類元素の少なくとも一部をＴｉ、Ｚｒ、Ｈｆ、Ｙｔ
Ｇｅｔ Ｓｂ、Ｂｉ、Ｔｅなどの高い熱安定性を示す
金属元素に置き換え、他は主として遷移金属元素を主成
分とし、必要に応じてＰ、Ｂ、Ｃ，ＳＬｔ Ｎなどの元
素を少量添加して、スパッタ蒸着法による非晶質合金薄
膜の作製を容易にすると共に熱安定性の改善をはかった
り、さらに金属−非金属系合金薄膜では２強磁性元素で
あるＦｅ、ＮｉまたはＧｏの添加量によって磁歪、飽和
磁化の値を調整しｙ Ｖｙ Ｃｒｇ Ｍｎ＋Ｎｂ、Ｍｏ
、Ｗまたは希土類元素を少量添加して結晶化温度ならび
に硬度を向上させることにより。In order to solve the problems in the prior art, the present inventors have discovered that nonmetallic elements and rare earth elements, which are constituent elements of conventional amorphous alloy thin films, are used as elements for vitrification (amorphization) of amorphous thin films. At least a part of the elements are Ti, Zr, Hf, Yt
Replace with metal elements that exhibit high thermal stability such as Sb, Bi, and Te, and other elements are mainly transition metal elements, with small amounts of elements such as P, B, C, and SLt N added as necessary. In addition, it facilitates the production of amorphous alloy thin films by sputter deposition and improves thermal stability.Furthermore, metal-nonmetal alloy thin films can be fabricated by adjusting the amount of two ferromagnetic elements Fe, Ni, or Go. Adjust the magnetostriction and saturation magnetization values y Vy Crg Mn+Nb, Mo
, by adding a small amount of W or rare earth elements to improve the crystallization temperature and hardness.
磁歪を小さくシ、熱安定性および耐摩耗性の改善をはか
ってきた。Efforts have been made to reduce magnetostriction and improve thermal stability and wear resistance.
しかしながら、磁気異方性が小さく、低保磁力で高透磁
率の非晶質磁性薄膜とするにはいまだ不十分であった。However, it was still insufficient to produce an amorphous magnetic thin film with small magnetic anisotropy, low coercive force, and high magnetic permeability.
本発明の目的は、上記従来技術の欠点を解消し。The object of the present invention is to eliminate the drawbacks of the above-mentioned prior art.
磁気異方性が小さく、低保磁力、高透磁率の非晶質薄膜
をスパッタ蒸着法により製造する方法を提供することに
ある。It is an object of the present invention to provide a method for manufacturing an amorphous thin film having small magnetic anisotropy, low coercive force, and high magnetic permeability by sputter deposition.
上記本発明の目的は２強磁性を有する非晶質薄膜の製造
方法において、所定の大きさの磁場を印加した回転磁場
中で、スパッタ蒸着法により非晶質薄膜を作製すること
により、達成される。The above object of the present invention is achieved by producing an amorphous thin film by sputter deposition in a rotating magnetic field to which a magnetic field of a predetermined magnitude is applied in a method for producing an amorphous thin film having two ferromagnetic properties. Ru.
本発明は、基板上に２例えばＦｅ、Ｎｉ、Ｇｏ元素より
なる群から選択された少なくとも１種の元素を主成分と
する強磁性の非晶質薄膜を形成する方法において、上記
基板上に形成させる非晶質薄膜に対して、相対的に回転
する磁場を印加しながらスパッタ蒸着により成膜する方
法である。そして、基板上に形成させる非晶質薄膜に対
して、印加する磁場の方向は、上記基板上に形成させる
非晶質薄膜面に対してほぼ平行であることが望ましく、
また、印加する磁場の大きさは、１０Ｏｅ以上であるこ
とが好ましい。上記印加する磁場の大きさがｌ０Ｃ）ｅ
未満であると９本発明の磁気特性向上効果が低減するの
で好ましくない。The present invention provides a method for forming a ferromagnetic amorphous thin film containing at least one element selected from the group consisting of, for example, Fe, Ni, and Go elements on a substrate. This is a method of forming an amorphous thin film by sputter deposition while applying a relatively rotating magnetic field to the amorphous thin film. The direction of the magnetic field applied to the amorphous thin film to be formed on the substrate is preferably approximately parallel to the surface of the amorphous thin film to be formed on the substrate,
Further, the magnitude of the applied magnetic field is preferably 10 Oe or more. The magnitude of the magnetic field applied above is l0C)e
If it is less than 9, the effect of improving magnetic properties of the present invention will be reduced, which is not preferable.
以下に本発明の一実施例を挙げ、さらに詳細に説明する
。An example of the present invention will be described below in more detail.
（実施例１）
−合金組成がＣｏ、。Ｍｏ５Ｚｒ、□の母合金をアーク
溶解により作製し、直径５０ｍｍ 、厚さ約１ｍｍのタ
ーゲットを作製した。このターゲットを用い、約３ｍＴ
ｏｒｒのＡｒ圧力下で、基板面に平行に５０Ｏｅ以上の
磁場を印加し、基板を回転しながら、スパッタ蒸着する
ことにより非晶質薄膜を作製した。得られた非晶質薄膜
の磁気特性は膜によってバラツキはあるが、その保磁力
は０．１Ｏｅ以下、初透磁率（２０ｋＨｚ）は６１００
以上の実用に適した磁気特性が得られた。このことは２
本実施例の方法により作製した非晶質薄膜は、誘導磁気
異方性が小さくなったことを示している。(Example 1) - Alloy composition is Co. A mother alloy of Mo5Zr, □ was produced by arc melting, and a target with a diameter of 50 mm and a thickness of about 1 mm was produced. Using this target, approximately 3 mT
An amorphous thin film was produced by sputter deposition under an Ar pressure of orr, applying a magnetic field of 50 Oe or more parallel to the substrate surface, and rotating the substrate. Although the magnetic properties of the obtained amorphous thin film vary depending on the film, its coercive force is less than 0.1 Oe, and its initial magnetic permeability (20 kHz) is 6100.
The above magnetic properties suitable for practical use were obtained. This is 2
The amorphous thin film produced by the method of this example shows that the induced magnetic anisotropy is reduced.
（比較例１）
合金組成がそれぞれ、 Ｃｏ、５．、ＭＯ，Ｚｒ、、５
゜Ｇ ｏ、、Ｍｏ、 、Ｚｒ、、、、 Ｇｏ、Ｓ、ｇＭ
ｏｌ、、Ｚｒ、、、になるように、直径５０ｍｍのコバ
ルト円板上に、 Ｍｏ、 Ｚｒの小塊を均一に配置した
複合ターゲットを用い。(Comparative Example 1) The alloy compositions are Co, 5. ,MO,Zr,,5
゜Go, , Mo, , Zr, , Go, S, gM
A composite target was used in which Mo and Zr small lumps were uniformly arranged on a cobalt disk with a diameter of 50 mm so that Zr,...
二極高周波スパッタ装置を使用して、約１〜Ｓｍ Ｔ
ｏｒｒのアルゴン圧力下で、上記複合ターゲットと基板
との間隔を５〜１０ｃｍとして、スパッタ蒸着を行い非
晶質薄膜を作製した。これらの組成の非品質薄膜は、い
ずれも保磁力が約１〜５Ｏｅを示し、上記実施例１と比
較して高い保磁力を示した。Using a two-pole high frequency sputtering device, approximately 1~Sm T
An amorphous thin film was fabricated by sputter deposition under an argon pressure of 5 to 10 cm between the composite target and the substrate. The non-quality thin films with these compositions all exhibited a coercive force of about 1 to 5 Oe, which was higher than that of Example 1 above.
（実施例２）
合金組成が（Ｇｏ、、 Ｉ＠ Ｆ ｅｏ、ｏ４）７□Ｍ
ｎ２５ ｌｔａ Ｂ １１の直径５０ｍｎ＋ 、厚さ約
１ｍｍのターゲットを用い、約３ ｍ Ｔ ｏｒｒのア
ルゴン圧力下で基板面に平行に約１００Ｏｅの磁場を印
加し、基板を回転しながらスパッタ蒸着することにより
上記組成の非晶質薄膜を作製した。得られた非晶質磁性
薄膜の保磁力は９０ｏｂｏｅと低く、透磁率も１ｋＨｚ
で７０００という高い値が得られた。これに対し２回転
磁場を与えないでスパッタ蒸着した従来の非晶質薄膜は
、飽和磁化が１０１０Ｏｅ／ｇｙ保磁力が約１００８も
あり９本発明の非晶質薄膜の作製法と比較して顕著な差
が認められた。(Example 2) Alloy composition is (Go,, I@F eo, o4)7□M
Using a n25 lta B 11 target with a diameter of 50 mn+ and a thickness of about 1 mm, a magnetic field of about 100 Oe was applied parallel to the substrate surface under an argon pressure of about 3 m Torr, and sputter deposition was performed while rotating the substrate. An amorphous thin film having the above composition was produced. The obtained amorphous magnetic thin film has a low coercive force of 90 oboe and a magnetic permeability of 1 kHz.
A high value of 7000 was obtained. On the other hand, the conventional amorphous thin film deposited by sputtering without applying a two-rotation magnetic field has a saturation magnetization of 1010 Oe/gy and a coercive force of about 1008, which is remarkable compared to the method for producing an amorphous thin film of the present invention. A significant difference was observed.
以上詳細に説明したごとく２本発明の回転磁場中でスパ
ッタ蒸着を行うことにより作製した非晶質薄膜は、従来
のスパッタ蒸着法により作製した非晶質薄膜と比較して
極めて優れた磁気特性を有するものであって、磁気異方
性が小さく、低い保磁力で、高い透磁率を示し、磁気コ
ア材などの電気音響変換素子材料、磁歪素子材料、イン
バー。As explained in detail above, the amorphous thin film produced by sputter deposition in a rotating magnetic field according to the present invention has extremely superior magnetic properties compared to the amorphous thin film produced by the conventional sputter deposition method. It has small magnetic anisotropy, low coercive force, and high magnetic permeability, and has electroacoustic transducer materials such as magnetic core materials, magnetostrictive element materials, and invar.
エリンバ−材料などに極めて有効に用いることができる
。It can be used extremely effectively for Elinvar materials and the like.
代理人弁理士 中 村 純之助Representative Patent Attorney Junnosuke Nakamura
Claims (4)
いて，上記基板上に形成させる非晶質薄膜に対して，相
対的に回転する磁場を印加しながらスパッタ蒸着法によ
り成膜することを特徴とする非晶質薄膜の製造方法。1. A method for forming a ferromagnetic amorphous thin film on a substrate includes forming the film by sputter deposition while applying a relatively rotating magnetic field to the amorphous thin film formed on the substrate. Characteristic method for producing amorphous thin film.
において，基板上に形成させる非晶質薄膜に印加する磁
場の方向が，上記基板上に形成させる非晶質薄膜面に対
してほぼ平行であることを特徴とする非晶質薄膜の製造
方法。2. In the method for manufacturing an amorphous thin film according to claim 1, the direction of the magnetic field applied to the amorphous thin film formed on the substrate is approximately parallel to the surface of the amorphous thin film formed on the substrate. A method for producing an amorphous thin film characterized by being parallel.
薄膜の製造方法において，基板上に形成させる非晶質薄
膜に印加する磁場の大きさが１０Ｏｅ以上であることを
特徴とする非晶質薄膜の製造方法。3. In the method for manufacturing an amorphous thin film according to claim 1 or 2, the magnetic field applied to the amorphous thin film formed on the substrate has a magnitude of 10 Oe or more. Method for producing crystalline thin films.
非晶質薄膜の製造方法において，強磁性の非晶質薄膜は
，Ｆｅ，Ｎｉ，Ｃｏ元素よりなる群から選択された少な
くとも１種の元素を主成分とする非晶質合金からなるこ
とを特徴とする非晶質薄膜の製造方法。4. In the method for manufacturing an amorphous thin film according to claim 1, 2, or 3, the ferromagnetic amorphous thin film contains at least one element selected from the group consisting of Fe, Ni, and Co elements. 1. A method for producing an amorphous thin film, characterized in that it is made of an amorphous alloy containing seed elements as main components.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19805788A JPH0192358A (en) | 1981-08-11 | 1988-08-10 | Manufacture of thin amorphous film |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56125800A JPH06104870B2 (en) | 1981-08-11 | 1981-08-11 | Method for producing amorphous thin film |
| JP19805788A JPH0192358A (en) | 1981-08-11 | 1988-08-10 | Manufacture of thin amorphous film |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56125800A Division JPH06104870B2 (en) | 1981-08-11 | 1981-08-11 | Method for producing amorphous thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0192358A true JPH0192358A (en) | 1989-04-11 |
Family
ID=26462120
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19805788A Pending JPH0192358A (en) | 1981-08-11 | 1988-08-10 | Manufacture of thin amorphous film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0192358A (en) |
-
1988
- 1988-08-10 JP JP19805788A patent/JPH0192358A/en active Pending
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