JPH04228568A - Production of amorphous thin film - Google Patents
Production of amorphous thin filmInfo
- Publication number
- JPH04228568A JPH04228568A JP3136315A JP13631591A JPH04228568A JP H04228568 A JPH04228568 A JP H04228568A JP 3136315 A JP3136315 A JP 3136315A JP 13631591 A JP13631591 A JP 13631591A JP H04228568 A JPH04228568 A JP H04228568A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- amorphous thin
- amorphous
- substrate
- magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 57
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 230000005291 magnetic effect Effects 0.000 claims abstract description 41
- 238000004544 sputter deposition Methods 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000010408 film Substances 0.000 claims abstract description 10
- 229910000808 amorphous metal alloy Inorganic materials 0.000 claims abstract description 7
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 4
- 229910052742 iron Inorganic materials 0.000 claims abstract description 3
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 abstract description 18
- 239000000956 alloy Substances 0.000 abstract description 18
- 230000035699 permeability Effects 0.000 abstract description 11
- 239000000463 material Substances 0.000 abstract description 8
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 229910052726 zirconium Inorganic materials 0.000 abstract description 4
- 229910052735 hafnium Inorganic materials 0.000 abstract description 3
- 229910000942 Elinvar Inorganic materials 0.000 abstract description 2
- 229910001374 Invar Inorganic materials 0.000 abstract description 2
- 229910052797 bismuth Inorganic materials 0.000 abstract description 2
- 229910052732 germanium Inorganic materials 0.000 abstract description 2
- 229910052714 tellurium Inorganic materials 0.000 abstract description 2
- 229910052719 titanium Inorganic materials 0.000 abstract description 2
- 229910052727 yttrium Inorganic materials 0.000 abstract description 2
- 239000000203 mixture Substances 0.000 description 11
- 238000002425 crystallisation Methods 0.000 description 7
- 230000008025 crystallization Effects 0.000 description 7
- 230000005415 magnetization Effects 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 4
- 229910052752 metalloid Inorganic materials 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 229910052761 rare earth metal Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000011162 core material Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005307 ferromagnetism Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明はスパッタ蒸着法により作
製した高い熱安定性を示すＺｒ，Ｔｉ，Ｈｆ等の金属元
素を基とした本質的に遷移金属と半金属元素からなる合
金組成で磁歪が小さい非晶質薄膜に関するものである。
さらに詳しくは回転磁場中でスパッタ蒸着することやス
パッタ蒸着膜を該薄膜のキュリー温度以上結晶化温度以
下で熱処理、あるいは回転磁場中で熱処理することによ
り低保磁力・高初期透磁率非晶質薄膜を提供するもので
ある。[Industrial Application Field] The present invention is a magnetostrictive material made of an alloy composition essentially consisting of transition metals and metalloid elements based on metal elements such as Zr, Ti, Hf, etc., which exhibits high thermal stability and is produced by sputter deposition. This relates to an amorphous thin film with a small value. More specifically, an amorphous thin film with low coercive force and high initial magnetic permeability is formed by sputter deposition in a rotating magnetic field, by heat-treating the sputter-deposited film at a temperature above the Curie temperature and below the crystallization temperature of the thin film, or by heat-treating the thin film in a rotating magnetic field. It provides:
【０００２】0002
【従来の技術】ある種の金属あるいは合金をスパッタ蒸
着することにより、原子構造で長範囲規則度のない非晶
質構造を得ることができる。この方法により得られた従
来の非晶質薄膜は、主にＢ，Ｃ，Ｓｉ等の半金属元素を
基とする金属−半金属系合金か、バブル磁性材料や光磁
気磁性材料に有用な希土類元素を基とする合金系よりな
っている。しかし、これらの非晶質合金系は機械的、磁
気的、電気的特性の劣化をもたらす熱安定性で未だ実用
上十分とはいえない。さらにＢ，Ｃ，Ｓｉ等の半金属元
素を基とする金属−半金属系合金はスパッタ蒸着時に導
入される磁気異方性のため高い保磁力と低い透磁率を示
し実用上問題がある。BACKGROUND OF THE INVENTION By sputter-depositing certain metals or alloys, it is possible to obtain an amorphous structure with no long-range order in the atomic structure. Conventional amorphous thin films obtained by this method are mainly metal-semimetal alloys based on semimetal elements such as B, C, and Si, or rare earth alloys useful for bubble magnetic materials and magneto-optical magnetic materials. It consists of an alloy system based on elements. However, these amorphous alloy systems have thermal stability that causes deterioration of mechanical, magnetic, and electrical properties, and are not yet sufficient for practical use. Furthermore, metal-metalloid alloys based on metalloid elements such as B, C, and Si exhibit high coercive force and low magnetic permeability due to magnetic anisotropy introduced during sputter deposition, which poses a practical problem.
【０００３】0003
【発明の概要】本発明は、上述の問題点を解消するため
、ガラス化元素として従来の非晶質合金系の構成元素で
ある半金属元素および希土類元素の少なくとも一部をＴ
ｉ，Ｚｒ，Ｈｆ，Ｙ，Ｇｅ，Ｓｂ，Ｂｉ，Ｔｅ等の金属
元素に置き換え、他は主として遷移金属元素を主成分と
し、必要に応じてＰ，Ｂ，Ｃ，Ｓｉ，Ｎ等の元素を少量
添加することによって、スパッタ蒸着法による非晶質合
金薄膜の作製を容易にすると共に熱安定性の改善をはか
ったものである。さらに金属−半金属系合金では強磁性
元素Ｆｅ，Ｎｉ，Ｃｏで磁歪、飽和磁化の値を調整し、
Ｖ，Ｃｒ，Ｍｎ，Ｎｂ，Ｍｏ，Ｗ，希土類を少量添加し
て結晶化温度、硬度を向上させることにより磁歪が小さ
くて、しかも熱安定性、耐摩耗性の改善をはかったもの
である。さらに、強磁性を示す非晶質薄膜においては、
回転磁場中でスパッタ蒸着するか、スパッタ蒸着によっ
て非晶質磁性薄膜を得た後、該膜をそのキュリー温度以
上、結晶化温度以下の温度で熱処理することにより、磁
気異方性の小さい、低保磁力、高透磁率の磁性薄膜を得
られるようにしたものである。SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, the present invention uses T as a vitrifying element to at least part of metalloid elements and rare earth elements that are constituent elements of conventional amorphous alloy systems.
Replaced with metal elements such as i, Zr, Hf, Y, Ge, Sb, Bi, Te, etc., other elements are mainly transition metal elements, and elements such as P, B, C, Si, N are added as necessary. By adding a small amount, it is possible to facilitate the production of an amorphous alloy thin film by sputter deposition and to improve thermal stability. Furthermore, in metal-semimetal alloys, the values of magnetostriction and saturation magnetization are adjusted using ferromagnetic elements Fe, Ni, and Co.
By adding small amounts of V, Cr, Mn, Nb, Mo, W, and rare earth elements to improve the crystallization temperature and hardness, the magnetostriction is small and the thermal stability and wear resistance are improved. Furthermore, in amorphous thin films that exhibit ferromagnetism,
After obtaining an amorphous magnetic thin film by sputter deposition in a rotating magnetic field or by sputter deposition, the film is heat-treated at a temperature higher than its Curie temperature and lower than its crystallization temperature. This makes it possible to obtain a magnetic thin film with high coercive force and high magnetic permeability.
【０００４】0004
【実施例】以下、本発明を実施例により詳細に説明する
。
＜実施例１＞合金組成がＣｏ７９Ｔｉ１３Ｚｒ８，Ｃｏ
８４Ｚｒ１６，Ｃｏ８０Ｔｉ１８Ｂ２，Ｆｅ９０Ｚｒ１
０，Ｃｏ８１Ｍｏ７Ｓｍ２Ｚｒ１０（Ｃｏ０．３Ｆｅ０
．７）９０Ｔｉ２Ｚｒ８，Ｆｅ８０Ｎｉ１０Ｚｒ１０の
母合金をアーク溶解により作製し、直径５０ｍｍ、厚さ
約１ｍｍのターゲットを作製した。薄膜作製は二極高周
波スパッタ装置を用い、約１〜５ｍＴｏｒｒのアルゴン
圧力下で、ターゲットと基板の間隔を５〜１０ｃｍとし
て、厚さ数μｍ以下の薄膜を作製した。得られた薄膜の
Ｘ線ディフラクトメーターによる回折曲線はすべて、な
だらかなメインピークと二三のサブピークからなる非晶
質構造特有の回折曲線を示し、非晶質薄膜が得られてい
ることが確認された。[Examples] The present invention will be explained in detail below with reference to Examples. <Example 1> Alloy composition is Co79Ti13Zr8, Co
84Zr16, Co80Ti18B2, Fe90Zr1
0,Co81Mo7Sm2Zr10(Co0.3Fe0
．． 7) A master alloy of 90Ti2Zr8, Fe80Ni10Zr10 was prepared by arc melting, and a target with a diameter of 50 mm and a thickness of about 1 mm was prepared. The thin film was produced using a bipolar high-frequency sputtering device under an argon pressure of about 1 to 5 mTorr, with a distance between the target and the substrate of 5 to 10 cm, and a thin film with a thickness of several μm or less. All the diffraction curves of the obtained thin film measured with an X-ray diffractometer showed a diffraction curve characteristic of an amorphous structure consisting of a gentle main peak and a few sub-peaks, confirming that an amorphous thin film was obtained. It was done.
【０００５】＜実施例２＞組成がＣｏ８５．５Ｍｏ５Ｚ
ｒ９．５，Ｃｏ８２Ｍｏ８．５Ｚｒ９．５，Ｃｏ７５．
５Ｍｏ１５Ｚｒ９．５になるように、直径５０ｍｍのコ
バルト円板上にＭｏ，Ｚｒの小塊を均一に配置した複合
ターゲットを用い、実施例１の条件で同時スパッタ蒸着
することにより非晶質薄膜を作製した。得られた非晶質
薄膜の結晶化温度（四端子法電気抵抗測定により決定）
は約５００℃と高く、１００℃、１００時間の熱処理後
でも電気抵抗値はほとんど変わらず、高い熱安定性を示
した。また、飽和磁化はＭｏ量が減少するとともに約６
０ｅｍｕ／ｇから１００ｅｍｕ／ｇと変化し、高い値が
得られることがわかった。これらの膜の保磁力は約１〜
５Ｏｅであった。磁歪が−８×１０￣７（半導体歪ゲー
ジを用いて測定）と低い値を示すＣｏ８２Ｍｏ８．５Ｚ
ｒ９．５非晶質薄膜を膜面内方向に２ｋＧの外部磁場を
印加し、１２００ｒ．ｐ．ｍ．の回転数で回転させなが
ら、４００℃で２０分間熱処理すると、保磁力８０ｍＯ
ｅ、初透磁率（２０ｋＨｚ）約６０００の軟磁特性が得
られた。<Example 2> Composition is Co85.5Mo5Z
r9.5, Co82Mo8.5Zr9.5, Co75.
An amorphous thin film was prepared by simultaneous sputter deposition under the conditions of Example 1 using a composite target in which small lumps of Mo and Zr were uniformly arranged on a cobalt disk with a diameter of 50 mm so that the target was 5Mo15Zr9.5. did. Crystallization temperature of the obtained amorphous thin film (determined by four-terminal electrical resistance measurement)
was as high as about 500°C, and the electrical resistance value remained almost unchanged even after heat treatment at 100°C for 100 hours, indicating high thermal stability. In addition, as the amount of Mo decreases, the saturation magnetization increases to about 6
It was found that high values were obtained, varying from 0 emu/g to 100 emu/g. The coercivity of these films is approximately 1~
It was 5 Oe. Co82Mo8.5Z exhibits a low magnetostriction of -8×10￣7 (measured using a semiconductor strain gauge)
An external magnetic field of 2 kG was applied to the r9.5 amorphous thin film in the in-plane direction, and the film was heated at 1200 r. p. m. When heated at 400℃ for 20 minutes while rotating at a rotation speed of
e, soft magnetic properties with an initial magnetic permeability (20 kHz) of about 6000 were obtained.
【０００６】＜実施例３＞合金組成が（Ｃｏ０．３Ｆｅ
０．７）９１Ｚｒ９，（Ｆｅ０．７Ｎｉ０．３）９０Ｚ
ｒ１０，Ｃｏ７２Ｎｉ１６Ｆｅ２Ｚｒ１０，（Ｃｏ０．
７２Ｎｉ０．１６Ｆｅ０．０２Ｚｒ０．１）９８Ｂ２，
Ｃｏ８５Ｃｒ４Ｒｕ２Ｚｒ９Ｃｏ８６Ｗ５Ｚｒ９，（Ｃ
ｏ０．８２Ｍｏ０．０８５Ｚｒ０．０９５）９８Ｂ２の
直径５０ｍｍの焼結体をターゲットとして用い、実施例
１と同様な製造条件でスパッタ蒸着して非晶質薄膜を作
製した。（Ｃｏ０．３Ｆｅ０．７）９１Ｚｒ９，（Ｆｅ
０．７Ｎｉ０．３）９０Ｚｒ１０の非晶質薄膜の飽和磁
化はそれぞれ１６０ｅｍｕ／ｇ，１２０ｅｍｕ／ｇと高
い値を示した。一方、Ｃｏ７２Ｎｉ１６Ｆｅ２Ｚｒ１０
非晶質薄膜では磁歪λｓほぼ０、飽和磁化σｓ１１０ｅ
ｍｕ／ｇ，（Ｃｏ０．７２Ｎｉ０．１６Ｆｅ０．０２Ｚ
ｒ０．１）９８Ｂ２非晶質薄膜ではλｓほぼ０，σｓ１
０５ｅｍｕ／ｇ，Ｃｏ８５Ｃｒ４Ｒｕ２Ｚｒ９非晶質薄
膜ではλｓほぼ０，σｓ９６ｅｍｕ／ｇといずれも高い
飽和磁化をもつ磁歪零材が得られた。<Example 3> The alloy composition is (Co0.3Fe
0.7)91Zr9, (Fe0.7Ni0.3)90Z
r10, Co72Ni16Fe2Zr10, (Co0.
72Ni0.16Fe0.02Zr0.1)98B2,
Co85Cr4Ru2Zr9Co86W5Zr9, (C
Using a sintered body of 0.82Mo0.085Zr0.095)98B2 with a diameter of 50 mm as a target, sputter deposition was performed under the same manufacturing conditions as in Example 1 to produce an amorphous thin film. (Co0.3Fe0.7)91Zr9, (Fe
The saturation magnetization of the amorphous thin films of 0.7Ni0.3)90Zr10 was as high as 160 emu/g and 120 emu/g, respectively. On the other hand, Co72Ni16Fe2Zr10
In an amorphous thin film, magnetostriction λs is almost 0 and saturation magnetization σs is 110e.
mu/g, (Co0.72Ni0.16Fe0.02Z
r0.1) In the 98B2 amorphous thin film, λs is almost 0, σs1
For the amorphous thin film of 05 emu/g and Co85Cr4Ru2Zr9, a zero magnetostriction material with high saturation magnetization of λs of approximately 0 and σs of 96 emu/g was obtained.
【０００７】＜実施例４＞実施例１の条件により作製さ
れたＣｏ７５．５Ｍｏ１５Ｚｒ９．５非晶質薄膜をその
キューリー温度（約４００℃）以上、結晶化温度（５０
５℃）以下の温度で熱処理後、水冷したところ、保磁力
５０ｍＯｅ、初透磁率（５ｋＨｚ）１００００の磁気異
方性の小さいすぐれた軟磁特性が得られた。<Example 4> A Co75.5Mo15Zr9.5 amorphous thin film produced under the conditions of Example 1 was heated to a temperature higher than its Curie temperature (approximately 400°C) and a crystallization temperature (50°C).
After heat treatment at a temperature below 5° C.) and cooling with water, excellent soft magnetic properties with a coercive force of 50 mOe and an initial permeability (5 kHz) of 10,000 and small magnetic anisotropy were obtained.
【０００８】＜実施例５＞組成がＣｏ８０Ｍｏ９Ｚｒ１
１の母合金をアーク溶解により作製し、直径５０ｍｍ，
厚さ約１ｍｍのターゲットを作製した。このターゲット
を用い、約３ｍＴｏｒｒのＡｒ圧力下で、基板面に平行
に５０Ｏｅ以上の磁場を印加し、基板を回転しながら、
スパッタ蒸着することにより非晶質薄膜を作製した。得
られた非晶質薄膜の磁気特性は膜によってバラツキはあ
るが、その保磁力は０．１Ｏｅ以下、初透磁率（２０ｋ
Ｈｚ）は６１００以上の実用に適した磁気特性が得られ
た。このことは、この作製法により誘導磁気異方性が小
さくなったことを示すものと思われる。<Example 5> Composition is Co80Mo9Zr1
A master alloy of No. 1 was prepared by arc melting, with a diameter of 50 mm,
A target with a thickness of about 1 mm was prepared. Using this target, under an Ar pressure of approximately 3 mTorr, a magnetic field of 50 Oe or more was applied parallel to the substrate surface, and while rotating the substrate,
An amorphous thin film was prepared by sputter deposition. Although the magnetic properties of the obtained amorphous thin film vary depending on the film, its coercive force is less than 0.1 Oe, and its initial permeability (20 k
Hz) was 6,100 or more, and magnetic properties suitable for practical use were obtained. This seems to indicate that the induced magnetic anisotropy was reduced by this manufacturing method.
【０００９】＜実施例６＞合金組成が（Ｃｏ０．９６Ｆ
ｅ０．０４）７３Ｃｒ２Ｓｉ１０Ｂ１５，（Ｃｏ０．９
６Ｆｅ０．０４）７３Ｍｎ２Ｓｉ１０Ｂ１５，（Ｃｏ０
．９６Ｆｅ０．０４）７３Ｎｂ２Ｓｉ１０Ｂ１５，Ｃｏ
４５．９Ｆｅ１０．１Ｎｉ２４Ｓｉ２Ｂ１８の母合金を
アーク溶解により作製し、直径５０ｍｍ，厚さ約１ｍｍ
のターゲットを作製した。
薄膜作製は二極高周波スパッタ装置を用い、約１〜５ｍ
Ｔｏｒｒのアルゴン圧力下で、ターゲットと基板との間
隔を５〜１０ｃｍとして厚さ数μｍ以下の非晶質薄膜を
作製した。得られた薄膜の膜面上に半導体歪ゲージをは
りつけ、４ｋＧの外部磁場で磁歪を測定したところ、Ｃ
ｏ４５．９Ｆｅ１０．１Ｎｉ２４Ｓｉ２Ｂ１８は＋１×
１０￣６、他の合金組成のものは１０￣７オーダーの低
い磁歪値を示した。作製されたままの薄膜の保磁力は０
．５〜１Ｏｅであった。<Example 6> The alloy composition is (Co0.96F
e0.04)73Cr2Si10B15, (Co0.9
6Fe0.04)73Mn2Si10B15, (Co0
．． 96Fe0.04)73Nb2Si10B15,Co
A master alloy of 45.9Fe10.1Ni24Si2B18 was produced by arc melting, and the diameter was 50 mm and the thickness was about 1 mm.
A target was created. Thin film is produced using a two-pole high frequency sputtering device, approximately 1 to 5 m long.
An amorphous thin film having a thickness of several micrometers or less was produced under argon pressure of Torr with a distance between the target and the substrate of 5 to 10 cm. When a semiconductor strain gauge was attached to the surface of the obtained thin film and the magnetostriction was measured with an external magnetic field of 4 kG, C
o45.9Fe10.1Ni24Si2B18 is +1×
10￣6, and those with other alloy compositions showed low magnetostriction values on the order of 10￣7. The coercive force of the as-prepared thin film is 0.
．． It was 5 to 1 Oe.
【００１０】＜実施例７＞実施例６で得た（Ｃｏ０．９
６Ｆｅ０．０４）７３Ｃｒ２Ｓｉ１０Ｂ１５非晶質磁性
薄膜の結晶化温度（四端子法電気抵抗測定により決定）
は約５１０℃、キューリー温度（磁気天秤により測定）
は約４４０℃、飽和磁化は８０ｅｍｕ／ｇであった。こ
の非晶質薄膜を真空中、４７０℃、１０分間熱処理後、
水冷すると、保磁力は０．５Ｏｅから７０ｍＯｅに減少
し、スムースなＢ−Ｈ曲線が得られた。その時の初透磁
率は２０ｋＨｚで９０００という高い値を示した。<Example 7> The (Co0.9
6Fe0.04)73Cr2Si10B15 Crystallization temperature of amorphous magnetic thin film (determined by four-probe method electrical resistance measurement)
is approximately 510℃, Curie temperature (measured with a magnetic balance)
The temperature was about 440°C, and the saturation magnetization was 80 emu/g. After heat treating this amorphous thin film at 470°C for 10 minutes in vacuum,
When cooled with water, the coercive force decreased from 0.5 Oe to 70 mOe, and a smooth BH curve was obtained. The initial magnetic permeability at that time was as high as 9000 at 20kHz.
【００１１】＜実施例８＞合金組成が（Ｃｏ０．９６Ｆ
ｅ０．０４）７７Ｍｎ２Ｓｉ１０Ｂ１１の非晶質薄膜を
実施例６と同様な条件で作製した。この非晶質薄膜の結
晶化温度は４５０℃、飽和磁化は１００ｅｍｕ／ｇ、保
磁力は約１０Ｏｅであった。得られた円板状（直径１０
ｍｍ）非晶質薄膜を４ｋＧの静磁場中で膜面が磁場の方
向と平行になるようにして７２０ｒ．ｐ．ｍ．の回転数
で回転させながら、昇温、急冷速度が２０℃／ｍｉｎに
なるようにして４００℃で２０分間の熱処理を行った。
熱処理後のこの非晶質薄膜の保磁力は６０ｍＯｅと低下
し、２０ｋＨｚで約８０００という高い透磁率を得た。
これらの軟磁気特性の改善は磁気異方性の減少、内部応
力の除去によるものと思われる。<Example 8> The alloy composition is (Co0.96F
e0.04) An amorphous thin film of 77Mn2Si10B11 was produced under the same conditions as in Example 6. The crystallization temperature of this amorphous thin film was 450° C., the saturation magnetization was 100 emu/g, and the coercive force was about 10 Oe. The resulting disk shape (diameter 10
mm) The amorphous thin film was heated in a static magnetic field of 4 kG for 720 r.mm) with the film surface parallel to the direction of the magnetic field. p. m. Heat treatment was performed at 400° C. for 20 minutes while rotating at a rotational speed of 20° C. and a rapid cooling rate of 20° C./min. After heat treatment, the coercive force of this amorphous thin film decreased to 60 mOe, and a high magnetic permeability of about 8000 at 20 kHz was obtained. These improvements in soft magnetic properties are thought to be due to reduction in magnetic anisotropy and removal of internal stress.
【００１２】＜実施例９＞合金組成が（Ｃｏ０．９６Ｆ
ｅ０．０４）７７Ｍｎ２Ｓｉ１０Ｂ１１の直径５０ｍｍ
，厚さ約１ｍｍのターゲットを用い、約３ｍＴｏｒｒの
アルゴン圧力下で基板面に平行に約１００Ｏｅの磁場を
印加し、基板を回転しながらスパッタ蒸着することによ
り上記組成の非晶質薄膜を作製した。得られた非晶質磁
性薄膜の保磁力は９０ｍＯｅと低く、透磁率も１ｋＨｚ
で７０００という高い値が得られ、通常の作製法と比べ
て顕著な差が認められた。<Example 9> The alloy composition is (Co0.96F
e0.04) 77Mn2Si10B11 diameter 50mm
Using a target with a thickness of about 1 mm, a magnetic field of about 100 Oe was applied parallel to the substrate surface under an argon pressure of about 3 mTorr, and an amorphous thin film with the above composition was fabricated by sputter deposition while rotating the substrate. . The coercive force of the obtained amorphous magnetic thin film is as low as 90 mOe, and the magnetic permeability is also 1 kHz.
A high value of 7,000 was obtained for this method, and a significant difference was observed compared to the normal production method.
【００１３】[0013]
【発明の効果】以上の説明から明らかなように、本発明
の非晶質薄膜は、従来の非晶質合金薄膜の合金組成とは
異なった新規な合金組成よりなり、高い熱安定性をもつ
とともに磁性薄膜においてはすぐれた磁気特性、すなわ
ち、低い保磁力と高い透磁率を示し、磁気コア材等の電
気音響変換素子材料、磁歪素子材料、インバー、エリン
バー材料等に有効に用いることができる。[Effects of the Invention] As is clear from the above description, the amorphous thin film of the present invention has a new alloy composition different from that of conventional amorphous alloy thin films, and has high thermal stability. At the same time, magnetic thin films exhibit excellent magnetic properties, that is, low coercive force and high magnetic permeability, and can be effectively used for electroacoustic transducer materials such as magnetic core materials, magnetostrictive element materials, Invar, Elinvar materials, etc.
Claims (4)
方法において、上記基板上に形成させる非晶質薄膜に対
して、相対的に回転する磁場を印加しながらスパッタ蒸
着法により成膜することを特徴とする非晶質薄膜の製造
方法。1. A method for forming a ferromagnetic amorphous thin film on a substrate, wherein the amorphous thin film is formed on the substrate by sputter deposition while applying a relatively rotating magnetic field. A method for producing an amorphous thin film, characterized by forming a film.
いて、基板上に形成させる非晶質薄膜に印加する磁場の
方向が、上記基板上に形成させる非晶質薄膜面に対して
ほぼ平行であることを特徴とする非晶質薄膜の製造方法
。2. The method for producing an amorphous thin film according to claim 1, wherein the direction of the magnetic field applied to the amorphous thin film formed on the substrate is relative to the surface of the amorphous thin film formed on the substrate. A method for producing an amorphous thin film characterized by being substantially parallel.
の製造方法において、基板上に形成させる非晶質薄膜に
印加する磁場の大きさが１０Ｏｅ以上であることを特徴
とする非晶質薄膜の製造方法。3. The method for manufacturing an amorphous thin film according to claim 1 or 2, wherein the magnitude of the magnetic field applied to the amorphous thin film formed on the substrate is 10 Oe or more. Method for producing crystalline thin films.
れか１項に記載の非晶質薄膜の製造方法において、強磁
性の非晶質薄膜は、Ｆｅ，Ｎｉ，Ｃｏ元素よりなる群か
ら選択された少なくとも１種の元素を主成分とする非晶
質合金からなることを特徴とする非晶質薄膜の製造方法
。4. In the method of manufacturing an amorphous thin film according to claim 1, 2, or 3, the ferromagnetic amorphous thin film is made of Fe, Ni, and Co elements. A method for producing an amorphous thin film, characterized in that the film is made of an amorphous alloy whose main component is at least one element selected from the group consisting of:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3136315A JPH072990B2 (en) | 1991-06-07 | 1991-06-07 | Method for producing amorphous thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3136315A JPH072990B2 (en) | 1991-06-07 | 1991-06-07 | Method for producing amorphous thin film |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56125800A Division JPH06104870B2 (en) | 1981-08-11 | 1981-08-11 | Method for producing amorphous thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04228568A true JPH04228568A (en) | 1992-08-18 |
| JPH072990B2 JPH072990B2 (en) | 1995-01-18 |
Family
ID=15172339
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3136315A Expired - Lifetime JPH072990B2 (en) | 1991-06-07 | 1991-06-07 | Method for producing amorphous thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH072990B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008045173A (en) * | 2006-08-16 | 2008-02-28 | Sanyo Special Steel Co Ltd | FeCoB-BASED TARGET MATERIAL TO WHICH Cr IS ADDED |
-
1991
- 1991-06-07 JP JP3136315A patent/JPH072990B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008045173A (en) * | 2006-08-16 | 2008-02-28 | Sanyo Special Steel Co Ltd | FeCoB-BASED TARGET MATERIAL TO WHICH Cr IS ADDED |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH072990B2 (en) | 1995-01-18 |
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