JP2727274B2 - Soft magnetic thin film - Google Patents

Soft magnetic thin film

Info

Publication number
JP2727274B2
JP2727274B2 JP4083198A JP8319892A JP2727274B2 JP 2727274 B2 JP2727274 B2 JP 2727274B2 JP 4083198 A JP4083198 A JP 4083198A JP 8319892 A JP8319892 A JP 8319892A JP 2727274 B2 JP2727274 B2 JP 2727274B2
Authority
JP
Japan
Prior art keywords
thin film
soft magnetic
coercive force
composition
magnetic thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP4083198A
Other languages
Japanese (ja)
Other versions
JPH05101934A (en
Inventor
治 清水
寛次 中西
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP4083198A priority Critical patent/JP2727274B2/en
Publication of JPH05101934A publication Critical patent/JPH05101934A/en
Application granted granted Critical
Publication of JP2727274B2 publication Critical patent/JP2727274B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00Thin magnetic films, e.g. of one-domain structure
    • H01F10/08Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/12Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
    • H01F10/13Amorphous metallic alloys, e.g. glassy metals
    • H01F10/131Amorphous metallic alloys, e.g. glassy metals containing iron or nickel

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、高飽和磁束密度と高周
波透磁率を持ち、高密度記録再生用磁気ヘッドのコア材
料などに好適な軟磁性薄膜に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a soft magnetic thin film having a high saturation magnetic flux density and a high-frequency magnetic permeability and suitable for a core material of a magnetic head for high density recording and reproduction.

【0002】[0002]

【発明の背景】例えばオーディオテープレコーダやVT
R(ビデオテープレコーダ)等の磁気記録再生装置にお
いては、記録信号の高密度化や高品質化等が進められて
おり、この高記録密度化に対応して、磁気記録媒体とし
て磁性粉にFe、Co、Ni等の金属あるいは合金から
なる粉末を用いた、いわゆるメタルテープや、強磁性金
属材料を真空薄膜形成技術によりベースフィルム上に直
接被着した、いわゆる蒸着テープ等が開発され、各分野
で実用化されている。
BACKGROUND OF THE INVENTION For example, audio tape recorders and VTs
In magnetic recording / reproducing apparatuses such as R (video tape recorder), recording signals have been increased in density and quality, and in response to this increase in recording density, Fe has been added to magnetic powder as a magnetic recording medium. So-called metal tapes using powders of metals or alloys such as Co, Ni, etc., and so-called vapor-deposited tapes in which a ferromagnetic metal material is directly applied on a base film by a vacuum thin film forming technique have been developed. Has been put to practical use.

【0003】[0003]

【従来の技術】ところで、このような所定の保磁力を有
する磁気記録媒体の特性を発揮せしめるためには、磁気
ヘッドのコア材料の特性として、高い飽和磁束密度を有
するとともに、同一の磁気ヘッドで再生を行なおうとす
る場合においては、高透磁率を併せて有することが要求
される。
2. Description of the Related Art In order to exhibit the characteristics of a magnetic recording medium having such a predetermined coercive force, the core material of a magnetic head must have a high saturation magnetic flux density and the same magnetic head. In the case of performing reproduction, it is required to have a high magnetic permeability as well.

【0004】最近、リボン状試料で、FeBZr、及び
これにCuを添加した合金によって高い飽和磁束密度と
高い透磁率を示すことが報告されている(日本金属学会
秋期大会一般講演概要(1990年)(第107回大
会)第419ページ及び420ページ)。
Recently, it has been reported that FeBZr and an alloy to which Cu is added exhibit high saturation magnetic flux density and high magnetic permeability in a ribbon-shaped sample (Summary of the General Lecture Meeting of the Japan Institute of Metals, Autumn Meeting (1990)). (107th meeting) pp. 419 and 420).

【0005】FeBZr合金リボン状試料は、所定組成
の原料をアーク溶解したのち単ロール急冷法によりリボ
ン状にし、一定条件下で熱処理されたものである旨報告
されている。
[0005] It is reported that a FeBZr alloy ribbon-shaped sample is obtained by melting a raw material having a predetermined composition into an arc shape, forming it into a ribbon shape by a single roll quenching method, and heat-treating it under a certain condition.

【0006】FeBZrCu合金リボン状試料は、Fe
BZr合金リボン状試料と同様にして製造されたもので
あり、Cuの存在により、軟磁気特性が向上する旨、及
び高透磁率が得られる組成領域が拡張する旨、報告され
ている。
The FeBZrCu alloy ribbon-shaped sample is made of Fe
It is manufactured in the same manner as the BZr alloy ribbon-shaped sample, and it is reported that the presence of Cu improves the soft magnetic properties and expands the composition region where a high magnetic permeability can be obtained.

【0007】[0007]

【発明が解決しようとする課題】前記講演概要の透磁率
は、リボン形状の試料で測定したものであり、低周波又
は直流での値と考えられる。リボン形状では渦電流損失
が大きく原理的に、高周波透磁率は小さな値になると考
えられる。
The permeability in the summary of the lecture is measured on a ribbon-shaped sample, and is considered to be a value at low frequency or direct current. In the ribbon shape, the eddy current loss is large and the high-frequency magnetic permeability is considered to be a small value in principle.

【0008】ところで、スパッタリング蒸着等の薄膜形
成手段を用いて、前記講演概要に記載の組成を有する薄
膜を基板上に製膜し、この薄膜に所定の熱処理を施して
も、熱処理後の薄膜は優れた軟磁性は示さなかった。
By the way, even if a thin film having the composition described in the above-mentioned lecture summary is formed on a substrate by using a thin film forming means such as sputtering vapor deposition, and the thin film is subjected to a predetermined heat treatment, the thin film after the heat treatment remains No excellent soft magnetism was shown.

【0009】本発明の目的は、上記従来技術の問題点を
改良した軟磁性薄膜を提供することである。より詳しく
は、本発明は高飽和磁束密度と高周波透磁率を持ち、高
密度記録再生用磁気ヘッドのコア材料などに好適な軟磁
性薄膜を提供することを課題とする。
An object of the present invention is to provide a soft magnetic thin film which has solved the above-mentioned problems of the prior art. More specifically, it is an object of the present invention to provide a soft magnetic thin film having a high saturation magnetic flux density and a high-frequency magnetic permeability and suitable for a core material of a magnetic head for high-density recording and reproduction.

【0010】[0010]

【課題を解決するための手段】本発明の第1の視点によ
れば、次の軟磁性薄膜により、上記目的を達成すること
ができる。
According to a first aspect of the present invention, the above object can be achieved by the following soft magnetic thin film.

【0011】FeZr(但し、a、b、
c、dは各々原子%を示し、XはCo、Ni、Cr、V
の少なくとも一種を表す)なる組成式で示され、その組
成範囲は、 86≦a+b≦93 0<b≦10 4≦c≦9 1≦d≦8 の範囲であり、保磁力Hc≦6Oe、飽和磁束密度Bs
≧17kGであり、 500℃の温度履歴を経た後におい
ても前記保磁力Hc及び前記飽和磁束密度Bsをなお保
持する軟磁性薄膜(請求項1に対応)。
[0011] Fe a X b Zr c B d ( where, a, b,
c and d each represent atomic%, and X represents Co, Ni, Cr, V
Of indicated at least representative of one) a composition formula, the composition range, 86 ≦ a + b ≦ 93 0 <b ≦ 10 4 ≦ c ≦ 9 1 ≦ d ≦ 8 range der of is, the coercive force Hc ≦ 6 Oe, Saturation magnetic flux density Bs
≧ 17 kG, and after a temperature history of 500 ° C.
However, the coercive force Hc and the saturation magnetic flux density Bs are still maintained.
THIS that soft magnetic thin film (corresponding to claim 1).

【0012】bは、好ましくは0.5以上である。B is preferably 0.5 or more.

【0013】なお、Feは鉄、Zrはジルコニウム、B
はボロン、Coはコバルト、Niはニッケル、Crはク
ロム、Vはバナジウムをそれぞれ表わす。
Incidentally, Fe is iron, Zr is zirconium, and B is
Represents boron, Co represents cobalt, Ni represents nickel, Cr represents chromium, and V represents vanadium.

【0014】本発明の第2の視点によれば、Feaf
eZrcd(但し、a、f、e、c、dは各々原子%
を示し、ZはCo、Cr、Vの少なくとも一種を表す)
なる組成式で示され、その組成範囲は、 86≦a+e+f≦93、0≦f≦10、 0<e≦20、e+f≦20、 4≦c≦9、1≦d≦8 であることを特徴とする軟磁性薄膜により上記目的が達
成される。
According to a second aspect of the present invention, Fe a Z f N
i e Zr c B d (where, a, f, e, c , d each atomic%
And Z represents at least one of Co, Cr and V)
The composition range is as follows: 86 ≦ a + e + f ≦ 93, 0 ≦ f ≦ 10, 0 <e ≦ 20, e + f ≦ 20, 4 ≦ c ≦ 9, 1 ≦ d ≦ 8. The above object is achieved by the soft magnetic thin film described above.

【0015】[0015]

【好適な実施態様及び作用】(第1の視点)本発明の軟
磁性薄膜は、Fe、Zr及びBの他に、Co、Ni、C
r、Vのうちの少なくとも1種が前記特定の組成範囲で
存在するので、スパッタリング蒸着等の気相析着法によ
る薄膜形成手段により形成した場合でも良好な軟磁気特
性を示す。特に、保磁力が小さい。
Preferred Embodiments and Functions (First Aspect) In addition to Fe, Zr and B, the soft magnetic thin film of the present invention can be made of Co, Ni, C
Since at least one of r and V exists in the above specific composition range, good soft magnetic properties are exhibited even when formed by a thin film forming means by a vapor deposition method such as sputtering deposition. In particular, the coercive force is small.

【0016】前記特定の組成範囲外の場合は、保磁力が
大きいことが多く、良好な軟磁気特性を示さない。
If the composition is out of the above-mentioned specific composition range, the coercive force is often large, and good soft magnetic properties are not exhibited.

【0017】Co、Ni、Cr、Vのうちの少なくとも
1種が0.5原子%以上存在することが好ましいのは、そ
の存在の効果がより明瞭になるからである。本発明の軟
磁性薄膜の好ましい組成範囲は、磁化容易軸方向の保磁
力が5.5[Oe]以下の範囲であり、より好ましい組成
範囲は、前記保磁力が3[Oe]以下、さらには2[O
e]以下の範囲であり、1.5[Oe]以下の範囲は特に
好ましい(図2参照)。
It is preferable that at least one of Co, Ni, Cr, and V is present in an amount of 0.5 atomic% or more, because the effect of its existence becomes clearer. A preferred composition range of the soft magnetic thin film of the present invention is a coercive force in the easy axis direction of 5.5 [Oe] or less, and a more preferred composition range is a coercive force of 3 [Oe] or less, and more preferably 2 [Oe]. O
e] or less, and particularly preferably 1.5 [Oe] or less (see FIG. 2).

【0018】本発明の軟磁性薄膜には、Cuを少量含ま
せることができる。
The soft magnetic thin film of the present invention can contain a small amount of Cu.

【0019】本発明の軟磁性薄膜は、例えばRFスパッ
タ法等の気相析着法により前記特定組成の薄膜を形成
し、この薄膜を例えば500〜600℃で1時間程度熱
処理して(必要に応じて磁界中で熱処理して)得ること
ができる。
The soft magnetic thin film of the present invention is formed, for example, by forming a thin film of the above-mentioned specific composition by a vapor deposition method such as an RF sputtering method, and heat-treating the thin film at, for example, 500 to 600 ° C. for about one hour (necessary) Heat treatment in a magnetic field).

【0020】(第2の視点)第2の視点によれば、第1
の視点におけるX成分のうちNiの存在が必須であり、
Niは20at%まで存在しうる。(e+f)は第1の
視点の(b)に対応する。第1の視点における各作用−
効果は、Ni存在に起因する特別な変更を除き、その他
格段の言及のない限り、第2の視点にも一般的に妥当し
うる。
(Second viewpoint) According to the second viewpoint, the first viewpoint
The presence of Ni in the X component in the viewpoint of
Ni can be present up to 20 at%. (E + f) corresponds to (b) of the first viewpoint. Actions from the first viewpoint-
Except for special changes due to the presence of Ni, the effect may generally be valid for the second viewpoint unless otherwise specified.

【0021】第2の視点に基づく特別の組成範囲は、所
望の高周波域で十分な軟磁性特性を与える。即ち、Ni
の存在により、保磁力Hcは2Oe以下の低い値に、N
i量の広い範囲に亘って安定化する。かくて、Niは好
ましくは0.5at%以上、より好ましくは1.5at%以上
含まれる。またNiの存在によって、耐食性が大きく改
善される。
The special composition range based on the second viewpoint provides sufficient soft magnetic properties in a desired high-frequency range. That is, Ni
, The coercive force Hc becomes a low value of 2 Oe or less,
Stabilizes over a wide range of i amount. Thus, Ni is preferably contained at least 0.5 at%, more preferably at least 1.5 at%. Also, the presence of Ni greatly improves the corrosion resistance.

【0022】[0022]

【実施例】(第1の視点)[Example] (First viewpoint)

【実施例1〜3】Fe955(at%)のターゲット上
にZrのチップ及びCoのチップを適当に配し、圧力2.
0[Pa]のArガス雰囲気、陰極電力200[W]の
条件でRFスパッタ法によりサファイア基板上に厚さ約
1μmの3種のFeCoZrB薄膜を形成した。これら
の薄膜を約1[kOe]の磁界中において550℃で1
時間熱処理して、軟磁性薄膜を得た。
Embodiments 1 to 3 A Zr chip and a Co chip are appropriately arranged on a Fe 95 B 5 (at%) target, and the pressure is set to 2.
Three types of FeCoZrB thin films having a thickness of about 1 μm were formed on a sapphire substrate by an RF sputtering method under an Ar gas atmosphere of 0 [Pa] and a cathode power of 200 [W]. These thin films were heated at 550 ° C. in a magnetic field of about 1 [kOe] for 1 hour.
Heat treatment was performed for a time to obtain a soft magnetic thin film.

【0023】得られた軟磁性薄膜の組成、磁化容易軸方
向の保磁力及び磁歪の正負判定を表1に示す。保磁力
は、50[Hz]のB−Hトレーサーを用いて測定磁界
25[Oe]で測定した(以下の実施例及び参考例の保
磁力も同様にして測定した。)磁歪の正負判定は、軟磁
性薄膜に応力を加えた時のBH特性の変化により行なっ
た。磁歪は膜面内方向にての測定値であり、膜面内での
磁歪は均一であると考えられる。
Table 1 shows the composition of the obtained soft magnetic thin film, the coercive force in the easy axis direction, and the positive / negative judgment of magnetostriction. The coercive force was measured using a BH tracer of 50 [Hz] with a measurement magnetic field of 25 [Oe] (the coercive force of the following Examples and Reference Examples was also measured in the same manner). The test was performed by changing the BH characteristics when stress was applied to the soft magnetic thin film. The magnetostriction is a measured value in the in-plane direction of the film, and it is considered that the magnetostriction in the in-plane is uniform.

【0024】[0024]

【参考例1】Coのチップを配さない以外は実施例1〜
3と同様にして、FeZrB薄膜を形成した。この薄膜
を実施例1〜3と同様に熱処理した。熱処理後の薄膜の
組成、磁化容易軸方向の保磁力及び磁歪の正負判定を表
1に示す。磁歪の正負判定は、実施例1〜3の場合と同
様にして行なった。
[Reference Example 1] Except that the Co chip was not provided.
3, a FeZrB thin film was formed. This thin film was heat-treated in the same manner as in Examples 1 to 3. Table 1 shows the composition of the thin film after heat treatment, the coercive force in the easy axis direction, and the positive / negative judgment of magnetostriction. Positive / negative determination of magnetostriction was performed in the same manner as in Examples 1-3.

【0025】[0025]

【表1】 [Table 1]

【0026】[0026]

【実施例4〜12】FeZrB三元系なる各種組成のタ
ーゲット上に5mm×5mmのCoチップを4枚配する
以外は実施例1〜3と同様にして、種々の組成のFeC
oZrB薄膜を形成した。これらの薄膜を実施例1〜3
と同様に熱処理して、軟磁性薄膜を得た。
Embodiments 4 to 12 In the same manner as in Embodiments 1 to 3 except that four Co chips of 5 mm × 5 mm were arranged on targets of various compositions of FeZrB ternary system, FeC of various compositions was used.
An oZrB thin film was formed. These thin films were prepared in Examples 1 to 3.
In the same manner as in the above, a soft magnetic thin film was obtained.

【0027】得られた軟磁性薄膜の組成及び磁化容易軸
方向の保磁力を表2に示す。なお、実施例5は飽和磁束
密度Bs17.6kGを示した。
Table 2 shows the composition and coercive force in the easy axis direction of the obtained soft magnetic thin film. In Example 5, the saturation magnetic flux density Bs was 17.6 kG.

【0028】[0028]

【表2】 [Table 2]

【0029】[0029]

【参考例2〜13】Coチップを配さない以外は実施例
4〜12と同様にして種々の組成のFeZrB薄膜を形
成した。これらの薄膜を実施例1〜3と同様に熱処理し
た。熱処理後の薄膜の組成及び磁化容易軸方向の保磁力
を表3に示す。
Reference Examples 2 to 13 FeZrB thin films of various compositions were formed in the same manner as in Examples 4 to 12, except that no Co chip was provided. These thin films were heat-treated in the same manner as in Examples 1 to 3. Table 3 shows the composition of the thin film after the heat treatment and the coercive force in the easy axis direction.

【0030】[0030]

【表3】 [Table 3]

【0031】[0031]

【実施例13〜15】Coチップの代わりにCrチッ
プ、Niチップ又はVチップをそれぞれ配する以外は実
施例4〜12と同様にして、3種のFeXZrB薄膜
(ここでXは、Cr、Ni又はVである。)を形成し
た。これらの薄膜を実施例1〜3と同様に熱処理して、
軟磁性薄膜を得た。
Embodiments 13 to 15 Three kinds of FeXZrB thin films (where X is Cr, Ni, etc.) in the same manner as in Embodiments 4 to 12 except that Cr chips, Ni chips or V chips are provided instead of Co chips, respectively. Or V.). Heat treatment of these thin films as in Examples 1 to 3,
A soft magnetic thin film was obtained.

【0032】得られた軟磁性薄膜の組成及び容易軸方向
の保磁力を表4に示す。
Table 4 shows the composition and the coercive force in the easy axis direction of the obtained soft magnetic thin film.

【0033】[0033]

【参考例14】Coチップの代わりにMnチップを配す
る以外は実施例4〜12と同様にして、FeMnZrB
薄膜を形成した。この薄膜を実施例1〜3と同様に熱処
理した。熱処理後の薄膜の組成及び磁化容易軸方向の保
磁力を表4に示す。
Reference Example 14 FeMnZrB was prepared in the same manner as in Examples 4 to 12 except that a Mn chip was used instead of a Co chip.
A thin film was formed. This thin film was heat-treated in the same manner as in Examples 1 to 3. Table 4 shows the composition of the thin film after the heat treatment and the coercive force in the easy axis direction.

【0034】[0034]

【表4】 [Table 4]

【0035】表1〜4によれば、Co、Cr、Ni及び
Vは、特に選択された元素であることが示されている。
Tables 1 to 4 show that Co, Cr, Ni and V are particularly selected elements.

【0036】[0036]

【実施例16】サファイア基板の代わりに直径2インチ
のグレーズド研磨アルミナ基板を用いRFスパッタ法に
よる製膜時間を長くする以外は実施例5と同様にして、
厚さ1.8μmのFeCoZrB薄膜を形成した。この薄
膜を実施例1〜3と同様に熱処理して、軟磁性薄膜を得
た。
Embodiment 16 A glazed polished alumina substrate having a diameter of 2 inches was used in place of the sapphire substrate, and the film formation time was increased by the RF sputtering method.
A 1.8 μm thick FeCoZrB thin film was formed. This thin film was heat-treated in the same manner as in Examples 1 to 3 to obtain a soft magnetic thin film.

【0037】得られた軟磁性薄膜の周波数に対する磁化
困難軸方向の透磁率を測定した。この結果を図1に示
す。μ′、μ″はそれぞれ実数部、虚数部を示す。
The magnetic permeability of the obtained soft magnetic thin film in the hard axis direction with respect to the frequency was measured. The result is shown in FIG. μ ′ and μ ″ indicate a real part and an imaginary part, respectively.

【0038】[0038]

【保磁力の分布】実施例2及び実施例4〜12のデータ
を元に、磁化容易軸方向の保磁力の分布を、Fe+C
o、Zr、Bの擬似3元系として図2に示す。
[Distribution of Coercive Force] Based on the data of Example 2 and Examples 4 to 12, the distribution of coercive force in the easy axis direction was calculated as Fe + C
FIG. 2 shows a pseudo ternary system of o, Zr, and B.

【0039】[0039]

【X線回折】実施例5と同様にして形成した熱処理前の
FeCoZrB薄膜のX線回折図を図3の(a)で示
す。この薄膜を実施例1〜3と同様に熱処理して得られ
た軟磁性薄膜のX線回折図を図3の(b)で示す。さら
に、参考例6と同様にして形成した熱処理後のFeZr
B薄膜のX線回折図を図3の(c)で示す。なお、X線
はCuのKα線を使用した。
[X-ray Diffraction] An X-ray diffraction diagram of the FeCoZrB thin film before heat treatment formed in the same manner as in Example 5 is shown in FIG. An X-ray diffraction diagram of a soft magnetic thin film obtained by heat-treating this thin film in the same manner as in Examples 1 to 3 is shown in FIG. Further, the heat-treated FeZr formed in the same manner as in Reference Example 6.
The X-ray diffraction diagram of the B thin film is shown in FIG. The X-ray used was a Kα ray of Cu.

【0040】図3の(a)及び(b)は、製膜直後にア
モルファス的であったものが熱処理によりかなり結晶化
(α−Fe(bcc)構造)していることを示してい
る。図3の(b)と(c)はほとんど同様なパターンで
あるが、注意深く見ると(110)面を示すピークが
(b)で(c)よりも左方へ僅かシフトしていることか
ら、(b)の(110)面の格子面間隔が若干(c)よ
りも大きくなっていることが分かる。なお、この傾向は
X=Co、Niについて認められるが、Cr、Vについ
ては逆に縮まる傾向を示す。
FIGS. 3A and 3B show that what was amorphous immediately after the film formation was considerably crystallized (α-Fe (bcc) structure) by the heat treatment. 3 (b) and 3 (c) are almost the same pattern, but when viewed carefully, the peak showing the (110) plane is slightly shifted to the left from (c) in (b). It can be seen that the lattice spacing of the (110) plane in (b) is slightly larger than in (c). Note that this tendency is observed for X = Co and Ni, but Cr and V show a tendency to shrink conversely.

【0041】バルク材料(従来のリボン状試料)では、
FeBZrの3元系(又はこれにCuを添加したもの)
で軟磁性を示すにもかかわらず薄膜材料(例えばスパッ
タリング法等の気相析着法により形成された薄膜)では
これにX(=Co、Ni、Cr、V)を添加した4元系
(又はCuを入れる場合は5元系)としなくては優れた
軟磁性は示さない。このメカニズムは明確ではないが以
下のように推定される。
For bulk materials (conventional ribbon samples)
FeBZr ternary system (or Cu added)
Although a thin film material (for example, a thin film formed by a vapor deposition method such as a sputtering method) despite exhibiting soft magnetism, a quaternary system in which X (= Co, Ni, Cr, V) is added thereto (or Excellent soft magnetism is not shown unless Cu is used (quinary system). Although this mechanism is not clear, it is presumed as follows.

【0042】まず、薄膜特有の配向性[図3より主に
(110)面の方向に配向していると考えられる]のた
め磁歪がバルク材料と異なっている可能性が有る。
First, there is a possibility that the magnetostriction is different from that of the bulk material due to the orientation characteristic of the thin film (it is considered to be mainly oriented in the (110) plane direction from FIG. 3).

【0043】次に、磁歪が仮にバルク材料と余り違わな
くとも、薄膜の場合一般に基板に形成されこれにより束
縛されることが多く、弾性エネルギーの影響を受け易い
ため同様な磁歪の値では軟磁性を示さずさらにゼロに近
づけなくてはならない可能性が有るが、本発明ではそれ
も可能である。以上のような推定が可能で有る。
Next, even if the magnetostriction is not so different from that of the bulk material, a thin film is generally formed on a substrate and is often bound by it, and is easily affected by elastic energy. There is a possibility that it is necessary to bring the value closer to zero without indicating the value, but this is also possible in the present invention. The above estimation is possible.

【0044】上述の実施例に従い、以下の好適な態様が
示される。即ち、磁歪は低い値であり、零近くとするこ
ともできる(表1)。保磁力は軟磁性を示す適度な値で
あり、(1)3Oe以下、(2)2.0Oe以下、又は
(3)1.5Oe以下に所望に応じて選択できる(図2参
照)。この(1)〜(3)の保磁力の値に、以下(i)
〜(iii)の組成範囲が図2等のデータから対応する。
According to the embodiment described above, the following preferred embodiments are shown. That is, the magnetostriction is a low value, and can be set to near zero (Table 1). The coercive force is a moderate value indicating soft magnetism and can be selected as desired from (1) 3 Oe or less, (2) 2.0 Oe or less, or (3) 1.5 Oe or less (see FIG. 2). The values of the coercive force of (1) to (3) include the following (i)
(Iii) correspond to the composition ranges shown in FIG.

【0045】 (i) Hc≦3Oe 86.5≦a+b≦92.5 0.5≦b≦6.6 0.5≦c≦8.6 1≦d≦7.7(I) Hc ≦ 3Oe 86.5 ≦ a + b ≦ 92.5 0.5 ≦ b ≦ 6.6 0.5 ≦ c ≦ 8.6 1 ≦ d ≦ 7.7

【0046】 (ii) Hc≦2Oe 87.5≦a+b≦91.6 1.5≦b≦6.6 5≦c≦8 1.5≦d≦6.8(Ii) Hc ≦ 2Oe 87.5 ≦ a + b ≦ 91.6 1.5 ≦ b ≦ 6.6 5 ≦ c ≦ 8 1.5 ≦ d ≦ 6.8

【0047】 (iii) Hc≦1.5Oe 89≦a+b≦91.3 2.5≦b≦6.6 5.3≦c≦7 2≦d≦5.4(Iii) Hc ≦ 1.5 Oe 89 ≦ a + b ≦ 91.3 2.5 ≦ b ≦ 6.6 5.3 ≦ c ≦ 72 ≦ d ≦ 5.4

【0048】(第2の視点)(Second viewpoint)

【実施例17〜20及び参考例15】上述の第1の視点
での実施例、参考例と同様にして、但し、夫々の元素の
チップに代わり各組成の合金をターゲットとして用い、
下記の式の組成によってe(Ni)の値を0から20以
上に亘り変化させて、試料を作成した。 (91−e)%Fe−e%Ni−6%Zr−3%B(a
t%) その結果を表5に示す。
Embodiments 17 to 20 and Reference Example 15 In the same manner as in the embodiment and reference example from the first viewpoint described above, except that the alloy of each composition is used as a target instead of the chip of each element.
Samples were prepared by changing the value of e (Ni) from 0 to 20 or more according to the composition of the following formula. (91-e)% Fe-e% Ni-6% Zr-3% B (a
Table 5 shows the results.

【0049】なお、Niが20at%を超えると、飽和
磁束密度Bsが低下するので好ましくない。実施例20
は、より低いNiの場合に比べ10%未満のBs低下を
示す。
Incidentally, if Ni exceeds 20 at%, the saturation magnetic flux density Bs decreases, which is not preferable. Example 20
Shows less than 10% Bs reduction compared to lower Ni.

【0050】[0050]

【表5】 [Table 5]

【0051】(好適な実施の態様のまとめ)第1の視点
では以下の態様がある。 (1)b≧0.5(X含有の効果がより明確になる) (2)保磁力Hc≦6Oe、飽和磁束密度Bs≧17k
G (3)保磁力Hc≦3Oe(前述の組成範囲(i)に対
応) (4)保磁力Hc≦2Oe(前述の組成範囲(ii)に対
応) (5)保磁力Hc≦1.5Oe(前述の組成範囲(iii)に
対応) (6)1〜10kHzの高周波域で透磁率6000以上
のもの (7)(110)面の方向に配向された微細結晶子を有
し、Fe−Zr−B系に比し(110)面の格子面間隔
が拡大したもの(X=Cr、Ni)
(Summary of Preferred Embodiments) The first aspect includes the following embodiments. (1) b ≧ 0.5 (Effect of X content becomes clearer) (2) Coercive force Hc ≦ 6Oe, saturation magnetic flux density Bs ≧ 17k
G (3) Coercive force Hc ≦ 3 Oe (corresponding to the aforementioned composition range (i)) (4) Coercive force Hc ≦ 2 Oe (corresponding to the aforementioned composition range (ii)) (5) Coercive force Hc ≦ 1.5 Oe (described above) (6) Those having a magnetic permeability of 6000 or more in a high frequency range of 1 to 10 kHz. (7) Fe-Zr-B having fine crystallites oriented in the direction of the (110) plane. The lattice spacing of the (110) plane is larger than that of the system (X = Cr, Ni)

【0052】第2の視点では以下の態様がある。 (8)保磁力Hc≦2OeでBs≧17kGのもの、 (9)(e+f)≧0.5のもの (10)上述の(7)に同じ(X=Niを必須とするた
め)
From the second viewpoint, there are the following modes. (8) Coercive force Hc ≦ 2Oe and Bs ≧ 17 kG, (9) (e + f) ≧ 0.5 (10) Same as (7) above (because X = Ni is essential)

【0053】[0053]

【発明の効果】本発明の軟磁性薄膜は、第1の視点(請
求項1)によれば、Fe、Zr及びBの他に、Co、N
i、Cr、Vのうちの少なくとも1種が前記特定の組成
範囲で存在するので、スパッタリング蒸着等の気相析着
法による薄膜形成手段により形成された場合でも良好な
軟磁気特性を示す。即ち、本発明の軟磁性薄膜は、飽和
磁束密度が少なくとも17(kG)程度以上であり、保
磁力が6(Oe)以下であり、高透磁率を有する。
According to the first aspect (claim 1), the soft magnetic thin film of the present invention can be formed of Co, N, in addition to Fe, Zr and B.
Since at least one of i, Cr and V exists in the above-mentioned specific composition range, good soft magnetic properties are exhibited even when formed by a thin film forming means by a vapor deposition method such as sputtering deposition. That is, the soft magnetic thin film of the present invention has a saturation magnetic flux density of at least about 17 (kG), a coercive force of 6 (Oe) or less, and has a high magnetic permeability.

【0054】本発明の第2の視点(請求項2)によれ
ば、Niの存在により保磁力が広範囲のNi含有量にわ
たり低く安定し(好ましくは2Oe以下)、さらにその
他第1の視点と同程度の効果をも示す。なおNiによ
り、耐食性も増大する。
According to the second aspect of the present invention (Claim 2), the presence of Ni makes the coercive force low and stable over a wide range of Ni content (preferably 2 Oe or less). It also shows a degree of effect. Note that Ni also increases corrosion resistance.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の軟磁性薄膜の一例の磁化困難軸方向の
透磁率の周波数特性を示す図である。
FIG. 1 is a diagram showing a frequency characteristic of magnetic permeability in a hard axis direction of an example of a soft magnetic thin film of the present invention.

【図2】本発明の実施例の軟磁性薄膜の磁化容易軸方向
の保磁力の分布を、Fe+Co、Zr、Bの擬似3元系
として示す図である。
FIG. 2 is a diagram showing a distribution of coercive force in an easy axis direction of a soft magnetic thin film according to an example of the present invention as a pseudo ternary system of Fe + Co, Zr, and B.

【図3】3種のX線回折図である。FIG. 3 is three types of X-ray diffraction diagrams.

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】FeZr(但し、a、b、
c、dは各々原子%を示し、XはCo、Ni、Cr、V
の少なくとも一種を表す)なる組成式で示され、その組
成範囲は、 86≦a+b≦93 0<b≦10 4≦c≦9 1≦d≦8 の範囲であり、保磁力Hc≦6Oe、飽和磁束密度Bs
≧17kGであり、 500℃の温度履歴を経た後におい
ても前記保磁力Hc及び前記飽和磁束密度Bsをなお保
持することを特徴とする軟磁性薄膜。
1. A Fe a X b Zr c B d ( where, a, b,
c and d each represent atomic%, and X represents Co, Ni, Cr, V
Of indicated at least representative of one) a composition formula, the composition range, 86 ≦ a + b ≦ 93 0 <b ≦ 10 4 ≦ c ≦ 9 1 ≦ d ≦ 8 range der of is, the coercive force Hc ≦ 6 Oe, Saturation magnetic flux density Bs
≧ 17 kG, and after a temperature history of 500 ° C.
However, the coercive force Hc and the saturation magnetic flux density Bs are still maintained.
THIS soft magnetic thin film characterized Rukoto.
【請求項2】FeafNieZrcd(但し、a、f、
e、c、dは各々原子%を示し、ZはCo、Cr、Vの
少なくとも一種を表す)なる組成式で示され、その組成
範囲は、 86≦a+e+f≦93、0≦f≦10、 0<e≦20、e+f≦20、 4≦c≦9、1≦d≦8 であることを特徴とする軟磁性薄膜。
Wherein Fe a Z f Ni e Zr c B d ( where, a, f,
e, c, and d each represent atomic%, and Z represents at least one of Co, Cr, and V), and the composition ranges are 86 ≦ a + e + f ≦ 93, 0 ≦ f ≦ 10, 0 <E ≦ 20, e + f ≦ 20, 4 ≦ c ≦ 9, 1 ≦ d ≦ 8.
JP4083198A 1991-03-05 1992-03-05 Soft magnetic thin film Expired - Fee Related JP2727274B2 (en)

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Application Number Priority Date Filing Date Title
JP6246891 1991-03-05
JP3-62468 1991-03-05
JP4083198A JP2727274B2 (en) 1991-03-05 1992-03-05 Soft magnetic thin film

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Publication Number Publication Date
JPH05101934A JPH05101934A (en) 1993-04-23
JP2727274B2 true JP2727274B2 (en) 1998-03-11

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07116563B2 (en) * 1987-07-23 1995-12-13 日立金属株式会社 Fe-based soft magnetic alloy
JPH03148806A (en) * 1989-11-06 1991-06-25 Hitachi Ltd Highly heat-resistant magnetic thin film and magnetic head using the same

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