JPS63266066A - Alloy target and production thereof - Google Patents
Alloy target and production thereofInfo
- Publication number
- JPS63266066A JPS63266066A JP10001287A JP10001287A JPS63266066A JP S63266066 A JPS63266066 A JP S63266066A JP 10001287 A JP10001287 A JP 10001287A JP 10001287 A JP10001287 A JP 10001287A JP S63266066 A JPS63266066 A JP S63266066A
- Authority
- JP
- Japan
- Prior art keywords
- compsn
- distribution
- alloy
- alloy target
- target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 33
- 239000000956 alloy Substances 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 238000009826 distribution Methods 0.000 claims abstract description 19
- 239000000843 powder Substances 0.000 claims abstract description 13
- 238000004544 sputter deposition Methods 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 11
- 150000002739 metals Chemical class 0.000 claims abstract description 9
- 239000000203 mixture Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 14
- 238000005245 sintering Methods 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000000465 moulding Methods 0.000 abstract description 5
- 238000009827 uniform distribution Methods 0.000 abstract 2
- 239000010408 film Substances 0.000 description 9
- 239000002245 particle Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000011197 physicochemical method Methods 0.000 description 1
- 238000004663 powder metallurgy Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明はスパタリングによる合金薄膜の形成に用いるス
パタリング用の合金ターゲラ１〜及びその製造法に関す
る。さらに詳しくは、スパタリング後に形成された膜の
組成分布が一様となるように調整されたスパタリング用
合金ターゲット及びその製造法に関する。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to an alloy targeter 1 for sputtering used for forming an alloy thin film by sputtering, and a method for manufacturing the same. More specifically, the present invention relates to an alloy target for sputtering that is adjusted so that the composition distribution of a film formed after sputtering is uniform, and a method for manufacturing the same.
〈従来の技術〉
合金の薄膜を１ｑるための手段として、合金のターゲッ
トをスパタリングする方法が用いられている。かかる２
種以上の金属および／必るいは合金からなるターゲット
の製法としては、通常これらの金属を溶融成型するか、
あるいはこれらの金属および／あるいは合金粉末を成型
、加熱焼結して作る方法がよく知られている。スパタリ
ング法によれば一般にはターゲットの合金組成と同じ組
成の膜が形成されるが、ある特定の金属元素からなる組
合せについては必ずしも正しくない。たとえば、高密度
の記録材料として最近、脚光を必ひているものに光磁気
記録媒体があるが、この記録層として用いられている丁
す、 Ｃｄ、 Ｎｄといった希土類とＦｅ、Ｇｏなどの
遷移金属の合金膜の場合、これらの金属からなる均一な
合金ターゲットを用いた場合でも、できた膜は基板の中
央と周辺部で組成が異ることが指摘されている。<Prior Art> A method of sputtering an alloy target is used as a means for depositing a 1q thick alloy thin film. It takes 2
The manufacturing method for targets made of one or more metals and/or alloys usually involves melting and molding these metals,
Alternatively, a well-known method is to mold these metal and/or alloy powders and heat and sinter them. According to the sputtering method, a film having the same composition as the alloy composition of the target is generally formed, but the combination of certain metal elements is not necessarily correct. For example, magneto-optical recording media have recently been in the spotlight as high-density recording materials, and the recording layer is made of rare earths such as carbon, Cd, and Nd, and transition metals such as Fe and Go. It has been pointed out that in the case of alloy films of , even when a uniform alloy target made of these metals is used, the composition of the resulting film differs between the center and the periphery of the substrate.
さらにこれらの合金ターゲットがたとえ同一組成であっ
ても製法によって膜の組成分布が異ることも指摘されて
いる（第３４回応用物理学関係連合講演会、 ２８ａ−
ＺＨ−ＩＬ ２８ｐ−７８−１，２８ｐ−ＺＨ−２）。Furthermore, it has been pointed out that even if these alloy targets have the same composition, the composition distribution of the film differs depending on the manufacturing method (34th Applied Physics Association Lecture, 28a-
ZH-IL 28p-78-1, 28p-ZH-2).
〈発明の目的〉
本発明はかかる現状に鑑みなされたもので、スパタリン
グ法によって形成された被膜の組成分布が一様になるよ
うな合金ターゲット及びそのｖＪ造方法を捉供するもの
である。<Objective of the Invention> The present invention has been made in view of the current situation, and provides an alloy target and a VJ manufacturing method thereof, in which the composition distribution of a film formed by a sputtering method is uniform.
〈発明の＋を成９作用〉 上述の目的は以下の本発明によって達成される。〈The +9 effect of invention〉 The above objects are achieved by the invention as follows.
すなわち、本発明は２種以上の金属からなるスパタリン
グ用の合金ターゲットにおいて、合金組成が所定の面分
布を有することを特徴とする合金ターゲットを第１発明
とし、この第１発明の合金ターゲットの製造法において
、２種以上の金属および／または合金粉末を型内で所定
の組成分布となるように加圧成型し、所定形状にしたの
ち加熱焼結することを特徴とする合金ターゲットの製造
法を第２発明とするものである。That is, the present invention provides, as a first invention, an alloy target for sputtering made of two or more metals, characterized in that the alloy composition has a predetermined planar distribution, and a method for producing the alloy target of the first invention. A method for manufacturing an alloy target is characterized in that two or more metals and/or alloy powders are pressure-molded in a mold to have a predetermined composition distribution, formed into a predetermined shape, and then heated and sintered. This is the second invention.
以下本発明の詳細をＴＩ）２５Ｆｅ７５の膜組成を１ｑ
る場合を例として説明する。The details of the present invention are described below. TI) The film composition of 25Fe75 is 1q.
This will be explained using an example.
ＴｂとＦｅを溶解して固めたインボッ１〜をｌｌ：５）
砕して得た金属間化合物粉末とＦｅの粉末を混合して型
内で成型する。Inbog 1~ which is solidified by dissolving Tb and Fe ll:5)
The intermetallic compound powder obtained by crushing and Fe powder are mixed and molded in a mold.
６インチφのターゲットを成型する場合、中央部ｔｉｔ
膜組成と同じ丁ｂ２５Ｆｅ７５粉末のみとし、周辺にい
くに従ってＦｅ粉末の足を増し、最外周部では約５ｗｔ
％の「ｅ粉末を混合する。このようにして得られた粉末
の集合体を加圧成型し、焼結してスパタリング用ターゲ
ットとする。When molding a 6 inch φ target, the central part tit
Using only the same B25Fe75 powder as the membrane composition, the amount of Fe powder increases towards the periphery, and at the outermost periphery it weighs approximately 5 wt.
% of e-powder is mixed. The powder aggregate thus obtained is pressure-molded and sintered to form a sputtering target.
金属または合金の粉末の製造法としては機械的粉砕法、
物理化学的方法など通常一般の方法が利用できる。粒度
および粒度分布、二種以上の粉末の混合法、成型法、焼
結法などは通常粉末冶金法として知られているものなら
何でも使用できる。Methods for producing metal or alloy powder include mechanical pulverization,
Common methods such as physicochemical methods can be used. As for particle size and particle size distribution, mixing method of two or more types of powder, molding method, sintering method, etc., any method commonly known as powder metallurgy can be used.
ターゲットの組成分布は上述の丁ｂ２５Ｆｅ７．の例で
は６インチφのターゲットに対して中央部に対し周辺部
で［ｅを５ｗｔ％増加にしたが、この組成分布は所望の
組成の模を得るための装置条件、スパタリング条件によ
って決定覆る必要がある。すなわち同一のターゲラ］・
を用いても、装置条件、スパタリング条件によって得ら
れた膜の組成分布は異るため、ターゲットの組成分布も
これらの条件を勘案して決める必要がある。The composition distribution of the target is as described above. In this example, e was increased by 5 wt% at the periphery compared to the center for a 6-inch diameter target, but this composition distribution is determined by the equipment conditions and sputtering conditions to obtain the desired composition pattern. There is. i.e. the same Targera]・
Even if a method is used, the composition distribution of the obtained film differs depending on the device conditions and sputtering conditions, so the composition distribution of the target must also be determined taking these conditions into consideration.
〈発明の効果〉
スパタリング粒子に角度分布依存性などがおり、ターゲ
ラ１〜組成と同一の組成分イ５が得られないような合金
組成の膜を得たいような場合において、特別の条件変更
あるいは装置上の変更を加えることなしに、組成分布の
一様な被膜を得ることができる。<Effects of the Invention> In cases where it is desired to obtain a film with an alloy composition in which sputtered particles have angular distribution dependence and the same composition as Targetera 1 to 5 cannot be obtained, special condition changes or equipment may be necessary. A coating with a uniform composition distribution can be obtained without making the above changes.
Claims (1)
ゲットにおいて、合金組成が所定の面分布を有すること
を特徴とする合金ターゲット。 ２、合金組成が所定の面分布を有するスパタリング用の
合金ターゲットの製造法において、２種以上の金属およ
び／または合金粉末を型内で所定の組成分布となるよう
に加圧成形し、所定形状にしたのち加熱焼結することを
特徴とする合金ターゲットの製造法。[Scope of Claims] An alloy target for sputtering made of one or more metals, characterized in that the alloy composition has a predetermined planar distribution. 2. In a method for manufacturing an alloy target for sputtering in which the alloy composition has a predetermined surface distribution, two or more metals and/or alloy powders are pressure-formed in a mold to have a predetermined composition distribution, and the target is formed into a predetermined shape. A method for manufacturing an alloy target, which is characterized by heating and sintering the alloy target.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10001287A JPS63266066A (en) | 1987-04-24 | 1987-04-24 | Alloy target and production thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10001287A JPS63266066A (en) | 1987-04-24 | 1987-04-24 | Alloy target and production thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63266066A true JPS63266066A (en) | 1988-11-02 |
Family
ID=14262645
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10001287A Pending JPS63266066A (en) | 1987-04-24 | 1987-04-24 | Alloy target and production thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63266066A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5118661A (en) * | 1989-11-21 | 1992-06-02 | Nec Corporation | Sputtering target for use in fabricating integrated circuit device |
| CN113308672A (en) * | 2021-04-15 | 2021-08-27 | 基迈克材料科技（苏州）有限公司 | ZnSn alloy target material and preparation method thereof |
-
1987
- 1987-04-24 JP JP10001287A patent/JPS63266066A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5118661A (en) * | 1989-11-21 | 1992-06-02 | Nec Corporation | Sputtering target for use in fabricating integrated circuit device |
| CN113308672A (en) * | 2021-04-15 | 2021-08-27 | 基迈克材料科技（苏州）有限公司 | ZnSn alloy target material and preparation method thereof |
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