JPS60230903A - Production of alloy target - Google Patents

Production of alloy target

Info

Publication number
JPS60230903A
JPS60230903A JP8894484A JP8894484A JPS60230903A JP S60230903 A JPS60230903 A JP S60230903A JP 8894484 A JP8894484 A JP 8894484A JP 8894484 A JP8894484 A JP 8894484A JP S60230903 A JPS60230903 A JP S60230903A
Authority
JP
Japan
Prior art keywords
transition metal
target
rare earth
powder
alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8894484A
Other languages
Japanese (ja)
Inventor
Hiroyuki Yamada
博之 山田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Daido Steel Co Ltd
Original Assignee
Daido Steel Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daido Steel Co Ltd filed Critical Daido Steel Co Ltd
Priority to JP8894484A priority Critical patent/JPS60230903A/en
Publication of JPS60230903A publication Critical patent/JPS60230903A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To produce a transition metal-rare earth alloy target having high density in the stage of producing the alloy target for forming a thin transition metal-rare earth film by making the powder of a raw material mixture contg. the transition metal in the smaller amt. than the amt. of the target component then mixing the powder with the remaining transition metal powder and molding and sintering the mixture. CONSTITUTION:The transition metal such as Co or Fe is first mixed with the rare earth element such as Gd at a ratio smaller by about 1-10% than the prescribed target value in the stage of producing the target for forming the transition metal-rare earth alloy such as Co-Gd or Fe-Gd as the a thin magnetic film for an optomagnetic recording disk by a PVD method. Such mixture is melted in a non-contaminating atmosphere and is then cooled and crushed in an inert atmosphere consisting of Ar, etc. The remaining 1-10% transition metal such as Co or Fe which is deficient is added to such powder and the mixture composed thereof is sintered at a high temp. in an atmosphere consisting of He, Ar, etc. by which the target consisting of the transition metal-rare earth alloy having high density and high strength is produced.

Description

【発明の詳細な説明】 (産業上の利用分野) この発明は、例えば光磁気記録ディスク用の磁性薄膜を
PVD法(物理的蒸着法)によって形成する際に使用さ
れる合金ターゲットを製造するのに適した薄膜形成用合
金ターゲットの製造方法に関するものである。
Detailed Description of the Invention (Industrial Application Field) The present invention is applicable to manufacturing an alloy target used when forming a magnetic thin film for a magneto-optical recording disk by a PVD method (physical vapor deposition method), for example. The present invention relates to a method of manufacturing an alloy target for thin film formation suitable for.

(従来技術) 近丼、高密度メモリーに対する関心が著しく高まってき
ており、各種のメモリー媒体が開発されている。これら
のうち、光磁気メモリーは、磁性材料に光(実際には多
くの場合に熱である)によって記録するものであり、デ
ィスク面に磁性薄膜を形成したものが使用される。そし
て、前記磁性薄膜材料としては、遷移金属−希土類系、
例えばCo−Gd 、Fe−Gd等のニガ系、あるいは
Co−Gd−Tb系、Fe−Gd−Tb系等の三元系の
合金などが有望視されている。
(Prior Art) Interest in high-density memory has increased significantly, and various memory media have been developed. Among these, a magneto-optical memory records information on a magnetic material using light (actually, in many cases, heat), and uses a disk surface with a magnetic thin film formed thereon. The magnetic thin film material includes transition metal-rare earth metal,
For example, alloys based on nigga such as Co-Gd and Fe-Gd, or ternary alloys such as Co-Gd-Tb and Fe-Gd-Tb are considered promising.

従来、上述した光磁気記録ディスクを製造するに際して
は、合成樹脂などにより成形した円形基盤の表面に、上
記した磁性薄膜材料をPVD法によって形成させる方法
があった。この方法においては、PVD法として例えば
スパッター装置を使用するものがある。このスパッター
装置は、真空容器中に磁性薄膜の組成にほぼ等しい組成
の合金ターゲットを設置すると共に、前記磁性薄膜を形
成しようとする円形基盤を前記合金ターゲットに対向さ
せて設置し、真空容器内にアルゴンガスを1O−2To
rr程度加えて十数MHzで1〜2KVの高周波を印加
して放電させ、放電によって生じたプラズマ中のアルゴ
ンイオンを前記合金ターゲ・ントに衝突させてその際の
衝突エネルギーによってたたき出された遷移金属と希土
類とを前記基盤に付着させるようにしたものである。
Conventionally, when manufacturing the above-mentioned magneto-optical recording disk, there has been a method of forming the above-mentioned magnetic thin film material on the surface of a circular base molded from synthetic resin or the like by the PVD method. In this method, for example, a sputtering device is used as the PVD method. In this sputtering apparatus, an alloy target having a composition approximately equal to that of the magnetic thin film is placed in a vacuum container, and a circular base on which the magnetic thin film is to be formed is placed facing the alloy target, and the sputtering device is placed in a vacuum container. 1O-2To of argon gas
rr and a high frequency of 1 to 2 KV at 10-odd MHz is applied to cause a discharge, and the argon ions in the plasma generated by the discharge collide with the alloy target, and the transition is driven out by the collision energy at that time. Metals and rare earth elements are attached to the base.

このように、磁性薄膜をPVD法によって形成するに際
しては合金ターゲットが必要であるが、従来の場合には
、合金化した遷移金属−゛希土類系の板状合金ターゲッ
トを製造することは、当該合金ターゲットが非常に脆い
ものとなることから困難であり、上記遷移金属−希土類
系の板状合金ターゲットを用いることができないのが形
状である。そして、従来の場合には単体の遷移金属およ
び希土類の板状のものを所定の配合比にあわせて交互に
繰り返し配置した状態のターゲットとし、スパッタリン
グ時に各々遷移金属と希土類とが蒸発した時点で当該遷
移金属と希土類とを一緒にして基盤に付着させる方法を
とることもあった。しかしながら、このような方法では
基盤上に付着された遷移金属−希土類系の磁性薄膜が均
一なものとなりがたく、それゆえ特性が不均一になりや
すいという問題点があった。
As described above, an alloy target is required when forming a magnetic thin film by the PVD method, but in the conventional case, manufacturing an alloyed transition metal-rare earth plate alloy target is This is difficult because the target becomes extremely brittle, and the shape of the target makes it impossible to use the above-mentioned transition metal-rare earth plate alloy target. In the conventional case, single transition metals and rare earths in the form of plates are arranged alternately and repeatedly in a predetermined blending ratio as targets, and when the respective transition metals and rare earths have evaporated during sputtering, the target In some cases, transition metals and rare earths were deposited together on a substrate. However, this method has the problem that it is difficult for the transition metal-rare earth magnetic thin film deposited on the substrate to be uniform, and therefore the characteristics tend to be non-uniform.

したがって、遷移金属−希土類系の合金化した板状ター
ゲットが得られれば上記したような問題が解消されるた
め望ましいことである。そこで、例えば目標成分に対応
した配合比の遷移金属粉末と希土類粉末との混合粉末を
成形焼結して粉末冶金体により板状の合金ターゲットを
製造することも考えられるが、希土類元素は著しく活性
であるため表面積の大きな希土類粉末を扱う一場合には
汚染が著しく大きくなり、良質の合金ターゲットを得る
ことができないと同時に、十分な焼結密度のものを得る
ことができないという問題点があった。
Therefore, it would be desirable if a transition metal-rare earth alloyed plate-like target could be obtained because the above-mentioned problems would be solved. Therefore, it is conceivable to manufacture a plate-shaped alloy target using a powder metallurgy body by forming and sintering a mixed powder of transition metal powder and rare earth powder in a blending ratio corresponding to the target component, but rare earth elements are extremely active. Therefore, when rare earth powder with a large surface area is handled, contamination becomes extremely large, making it impossible to obtain a good quality alloy target and, at the same time, making it impossible to obtain one with sufficient sintered density. .

(発明の目的) この発明は、上述したような従来の問題点に着目してな
されたもので、粉末冶金の手法によって板状等の合金タ
ーゲットの製造が可能であり、高密度の合金ターゲット
を汚染なく製造することができるようにすることを目的
としている。
(Purpose of the Invention) This invention has been made by focusing on the conventional problems as described above, and it is possible to manufacture plate-shaped alloy targets using powder metallurgy techniques, and it is possible to manufacture high-density alloy targets. The aim is to enable production without contamination.

(発明の構成) この発明は、遷移金属−希土類系の薄膜形成用合金ター
ゲットを製造するに際し、目標成分よりも遷移金属量が
少ない遷移金属−希土類系合金粉末を溶解・粉砕法によ
り製造し、前記合金粉末と前記目標成分に対して残りの
遷移金属粉末とを混合して成形・焼結するようにしたこ
とを#徴としている。
(Structure of the Invention) When producing a transition metal-rare earth alloy target for forming a thin film, the present invention produces a transition metal-rare earth alloy powder having a smaller amount of transition metal than the target component by a melting and pulverizing method. The feature # is that the alloy powder and the transition metal powder remaining with respect to the target component are mixed and then molded and sintered.

この発明の合金ターゲットを構成する遷移金属としては
、Co 、Feなとの遷移金属が使用され、希土類とし
てはGd、、Tbなとの希土類が使用される。そして、
目標成分よりも遷移金属量が少ない遷移金属−希土類系
合金粉末を製造するに際しては、例えば、遷移金属の量
を目標値よりも1−10%程瓜少なくした配合割合にし
てこの遷移金属と希土類とを非汚染雰囲気中で例えばプ
ラズマスカル溶解(PSC)や真空誘導溶解(VIP)
などによって溶製し、その後、Ar等の不活性雰囲気の
ような非酸化性雰囲気中で破砕する。なお、合金粉末を
製造する方法としては、前記遷移金属−希土類凝固塊を
機械的に破砕する方法や、前記遷移金属−希土類の溶湯
をアトマイズ法や遠心噴霧法等によって粉化する方法な
どが採用される。
As the transition metal constituting the alloy target of this invention, transition metals such as Co and Fe are used, and as rare earths, rare earths such as Gd and Tb are used. and,
When producing a transition metal-rare earth alloy powder with a smaller amount of transition metal than the target component, for example, the amount of transition metal and rare earth can be reduced by 1-10% less than the target value. and in a non-contaminated atmosphere, such as plasma skull melting (PSC) or vacuum induction melting (VIP).
After that, it is crushed in a non-oxidizing atmosphere such as an inert atmosphere such as Ar. In addition, methods for producing the alloy powder include a method of mechanically crushing the transition metal-rare earth solidified agglomerate, a method of pulverizing the transition metal-rare earth molten metal by an atomization method, a centrifugal spraying method, etc. be done.

次に、前記遷移金属−希土類系の合金粉末と、前記目標
成分に対して残り、例えば1−10%程度の遷移金属粉
末とを混合して所望の合金ターゲットの形状に対応した
形状に成形する。この成形に際しては、ヘリウム、アル
ゴン等の雰囲気中あるいは真空中の高温で成形すること
もできる。
Next, the transition metal-rare earth alloy powder and the remaining transition metal powder, for example, about 1-10% of the target component, are mixed and formed into a shape corresponding to the shape of the desired alloy target. . This molding can also be performed at high temperature in an atmosphere of helium, argon, etc. or in vacuum.

その後前記成形装置内または別装置等において真空ある
いは不活性ガス等の非汚染雰囲気中で焼結することによ
り、目標成分の遷移金属−希土類系合金ターゲットを得
る。このようにして得られた合金ターゲットは、上記遷
移金属粉末が前記遷移金属−希土類系合金粉末のバイン
ダとして作用し、形状が確実に保持されうる強度の大き
な焼結体となる。
Thereafter, the target is sintered in a non-contaminated atmosphere such as vacuum or inert gas in the molding device or in a separate device to obtain a transition metal-rare earth alloy target having the target component. In the alloy target thus obtained, the transition metal powder acts as a binder for the transition metal-rare earth alloy powder, and the target becomes a strong sintered body whose shape can be reliably maintained.

(実施例) まず、遷移金属としてFeを57重量%、希士類として
Gdを43重量%となる割合でアルゴン露囲気中のプラ
ズマスカル炉内で溶製してFe−Gd合金塊を製造した
。次いで、前記合金塊をクラッシャーにより機械的に粉
砕してFe−Gd合金粉末を得た。次に、前記Fe−G
d合金粉末に対して約7.5%のFe粉末を混合してボ
ールミルにより均一な混合粉末としたのち、製造しよう
とする板状合金ターゲットの寸法にあわせた成形空間を
形成する金型内に前記混合粉末を入れて圧粉成形するこ
とにより直径250mm、厚さ5mmの板状成形体を得
た。次いで、前記板状成形体をAr雰囲気中で焼結した
のち表面粗爪が10〜15ILmとなるように機械研磨
して仕上げた。このようにして得た合金ターゲットは約
60重量%Fe−40重量%Gdであり、形状を良好に
維持することが可能であってスパッター装置等のPVD
装置のターゲットとして十分使用しうる強度の高いもの
であった。
(Example) First, an Fe-Gd alloy ingot was produced by melting in a plasma skull furnace in an argon atmosphere at a ratio of 57% by weight of Fe as a transition metal and 43% by weight of Gd as a rare element. . Next, the alloy ingot was mechanically crushed using a crusher to obtain Fe-Gd alloy powder. Next, the Fe-G
After mixing approximately 7.5% Fe powder with the d alloy powder and making it into a uniform mixed powder using a ball mill, it is placed in a mold that forms a molding space that matches the dimensions of the plate-shaped alloy target to be manufactured. The mixed powder was added and compacted to obtain a plate-shaped compact having a diameter of 250 mm and a thickness of 5 mm. Next, the plate-shaped molded body was sintered in an Ar atmosphere, and then finished by mechanical polishing so that the surface roughness was 10 to 15 ILm. The alloy target thus obtained is approximately 60 wt% Fe-40 wt% Gd, can maintain its shape well, and can be used in PV applications such as sputtering equipment.
It was strong enough to be used as a target for equipment.

次に、上記合金ターゲットをスパッター装置のターゲッ
トホルダに設置して高周波電源を接続すると共に、基盤
ホルダに樹脂製の円形基盤を設置して、Ar’9囲気中
でスパッタリングを行い、前記基盤上に付着したFe−
Gd合金薄膜を調べたところ、著しく均質な磁性薄膜と
なっていることが確認された。
Next, the alloy target is placed in a target holder of a sputtering device, a high frequency power source is connected, and a resin circular substrate is placed in the substrate holder, sputtering is performed in an Ar'9 atmosphere, and sputtering is performed on the substrate. Adhered Fe-
When the Gd alloy thin film was examined, it was confirmed that it was an extremely homogeneous magnetic thin film.

(発明の効果) 以上説明してきたように、この発明では、遷移金属−希
土類系の薄膜形成用合金ターゲットを製造するに際し、
目標成分よりも遷移金属量が少ない遷移金属−希土類系
合金粉末を溶解番粉砕法により製造し、前記合金粉末と
前記目標成分に対して残りの遷移金属粉末とを混合して
成形・焼結するようにしたから、粉末冶金の手法によっ
てスパッター装置などに使用される板状等の合金ターゲ
ットの製造が可能であり、所定のターゲット形状を十分
に維持することができると共に合金ターゲットの製造に
際して希土類粉末を使用しないため汚染が著しく少なく
、遷移金属粉末を粉末同士のバインダーとして作用させ
ているため、合金ターゲットの純度を著しく高めること
が可能であると同時に密度の高いものが得られ、これに
よって高密度Φ高強度の合金ターゲ・ントを汚染なく製
造することが可能であるという非常に優れた効果を有す
るものである。
(Effects of the Invention) As explained above, in the present invention, when producing a transition metal-rare earth alloy target for forming a thin film,
A transition metal-rare earth alloy powder having a smaller amount of transition metal than the target component is produced by melting and crushing, and the alloy powder is mixed with the transition metal powder remaining for the target component, and then molded and sintered. Because of this, it is possible to manufacture plate-shaped alloy targets used in sputtering equipment, etc. using powder metallurgy techniques, and it is possible to sufficiently maintain a predetermined target shape, and it is also possible to use rare earth powder when manufacturing alloy targets. Since the transition metal powder is used as a binder between the powders, it is possible to significantly increase the purity of the alloy target, and at the same time, it is possible to obtain a highly dense target. This method has a very excellent effect in that it is possible to manufacture a high-strength alloy target without contamination.

特許出願人 大同特殊鋼株式会社 代理人弁理士 ・小 塩 豊Patent applicant: Daido Steel Co., Ltd. Representative Patent Attorney Yutaka Shio

Claims (1)

【特許請求の範囲】[Claims] (1)瓜移金属−局土類系の曲成形成用合金ターゲット
を製造するに際し、目標成分よりも遷移金属量が少ない
遷移金属−希土類系合金粉末を溶解の粉砕法により製造
し、前記合金粉末と前記目標成分に対して残りの遷移金
属粉末とを混合して成形・焼結することを特徴とする薄
膜形成用合金ターゲットの製造方法。
(1) When producing a metal-local earth alloy target for bend forming, a transition metal-rare earth alloy powder having a smaller amount of transition metal than the target component is produced by melting and pulverizing, and A method for producing an alloy target for forming a thin film, comprising mixing the powder and the remaining transition metal powder with respect to the target components, and then molding and sintering the mixture.
JP8894484A 1984-05-01 1984-05-01 Production of alloy target Pending JPS60230903A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8894484A JPS60230903A (en) 1984-05-01 1984-05-01 Production of alloy target

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8894484A JPS60230903A (en) 1984-05-01 1984-05-01 Production of alloy target

Publications (1)

Publication Number Publication Date
JPS60230903A true JPS60230903A (en) 1985-11-16

Family

ID=13956984

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8894484A Pending JPS60230903A (en) 1984-05-01 1984-05-01 Production of alloy target

Country Status (1)

Country Link
JP (1) JPS60230903A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6191336A (en) * 1984-10-09 1986-05-09 Mitsubishi Metal Corp Production of alloy target material
JPS61264533A (en) * 1985-05-17 1986-11-22 Toyo Soda Mfg Co Ltd Sputtering target for photomagnetic recording and its production
JPS62274033A (en) * 1986-05-22 1987-11-28 Hitachi Metals Ltd Manufacture of rare earth-transition metal alloy target
JPS6350469A (en) * 1986-08-20 1988-03-03 Hitachi Metals Ltd Manufacture of alloy target for sputtering
JPS63118028A (en) * 1986-11-06 1988-05-23 Hitachi Metals Ltd Rare earth element-transition metal element target and its production
JPS648243A (en) * 1987-06-30 1989-01-12 Mitsui Shipbuilding Eng Rare earth metal-transition metal alloy and its production
US4824481A (en) * 1988-01-11 1989-04-25 Eaastman Kodak Company Sputtering targets for magneto-optic films and a method for making
JPH02145764A (en) * 1988-11-29 1990-06-05 Tokin Corp Sputtering target
US4957549A (en) * 1987-04-20 1990-09-18 Hitachi Metals, Ltd. Rare earth metal-iron group metal target, alloy powder therefor and method of producing same
US5439500A (en) * 1993-12-02 1995-08-08 Materials Research Corporation Magneto-optical alloy sputter targets

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5247514A (en) * 1975-10-14 1977-04-15 Seiko Instr & Electronics Ltd Process for producing magnet consisting of rare earth elements and cob alt

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5247514A (en) * 1975-10-14 1977-04-15 Seiko Instr & Electronics Ltd Process for producing magnet consisting of rare earth elements and cob alt

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6191336A (en) * 1984-10-09 1986-05-09 Mitsubishi Metal Corp Production of alloy target material
JPS61264533A (en) * 1985-05-17 1986-11-22 Toyo Soda Mfg Co Ltd Sputtering target for photomagnetic recording and its production
JPS62274033A (en) * 1986-05-22 1987-11-28 Hitachi Metals Ltd Manufacture of rare earth-transition metal alloy target
JPS6350469A (en) * 1986-08-20 1988-03-03 Hitachi Metals Ltd Manufacture of alloy target for sputtering
JPH05320896A (en) * 1986-08-20 1993-12-07 Hitachi Metals Ltd Alloy target for sputtering and its production
JPS63118028A (en) * 1986-11-06 1988-05-23 Hitachi Metals Ltd Rare earth element-transition metal element target and its production
US5062885A (en) * 1987-04-20 1991-11-05 Hitachi Metals, Ltd. Rare earth metal-iron group metal target, alloy powder therefor and method of producing same
US4957549A (en) * 1987-04-20 1990-09-18 Hitachi Metals, Ltd. Rare earth metal-iron group metal target, alloy powder therefor and method of producing same
US5098649A (en) * 1987-04-20 1992-03-24 Hitachi Metals, Ltd. Rare earth metal-iron group metal target, alloy powder therefor and method of producing same
JPS648243A (en) * 1987-06-30 1989-01-12 Mitsui Shipbuilding Eng Rare earth metal-transition metal alloy and its production
US4824481A (en) * 1988-01-11 1989-04-25 Eaastman Kodak Company Sputtering targets for magneto-optic films and a method for making
JPH02145764A (en) * 1988-11-29 1990-06-05 Tokin Corp Sputtering target
US5439500A (en) * 1993-12-02 1995-08-08 Materials Research Corporation Magneto-optical alloy sputter targets

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