JPS5799773A - Composite thyristor - Google Patents
Composite thyristorInfo
- Publication number
- JPS5799773A JPS5799773A JP55176237A JP17623780A JPS5799773A JP S5799773 A JPS5799773 A JP S5799773A JP 55176237 A JP55176237 A JP 55176237A JP 17623780 A JP17623780 A JP 17623780A JP S5799773 A JPS5799773 A JP S5799773A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- layers
- scr
- shaped
- dielectric resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
- H10F30/263—Photothyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/60—Gate-turn-off devices
Landscapes
- Thyristors (AREA)
- Light Receiving Elements (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55176237A JPS5799773A (en) | 1980-12-13 | 1980-12-13 | Composite thyristor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55176237A JPS5799773A (en) | 1980-12-13 | 1980-12-13 | Composite thyristor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5799773A true JPS5799773A (en) | 1982-06-21 |
JPH0117266B2 JPH0117266B2 (enrdf_load_html_response) | 1989-03-29 |
Family
ID=16010028
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55176237A Granted JPS5799773A (en) | 1980-12-13 | 1980-12-13 | Composite thyristor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5799773A (enrdf_load_html_response) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS594074A (ja) * | 1982-06-30 | 1984-01-10 | Toshiba Corp | ゲ−トタ−ンオフサイリスタ装置 |
JPS59211271A (ja) * | 1983-05-17 | 1984-11-30 | Toshiba Corp | 半導体装置 |
JPS61141179A (ja) * | 1984-12-13 | 1986-06-28 | Mitsuteru Kimura | タ−ン・オフ・サイリスタ |
-
1980
- 1980-12-13 JP JP55176237A patent/JPS5799773A/ja active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS594074A (ja) * | 1982-06-30 | 1984-01-10 | Toshiba Corp | ゲ−トタ−ンオフサイリスタ装置 |
JPS59211271A (ja) * | 1983-05-17 | 1984-11-30 | Toshiba Corp | 半導体装置 |
JPS61141179A (ja) * | 1984-12-13 | 1986-06-28 | Mitsuteru Kimura | タ−ン・オフ・サイリスタ |
Also Published As
Publication number | Publication date |
---|---|
JPH0117266B2 (enrdf_load_html_response) | 1989-03-29 |
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