JPS5799769A - Composite transistor - Google Patents

Composite transistor

Info

Publication number
JPS5799769A
JPS5799769A JP55176236A JP17623680A JPS5799769A JP S5799769 A JPS5799769 A JP S5799769A JP 55176236 A JP55176236 A JP 55176236A JP 17623680 A JP17623680 A JP 17623680A JP S5799769 A JPS5799769 A JP S5799769A
Authority
JP
Japan
Prior art keywords
composite transistor
transistor
composite
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55176236A
Other languages
English (en)
Japanese (ja)
Other versions
JPS637470B2 (enExample
Inventor
Shunji Miura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Fuji Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd, Fuji Electric Manufacturing Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP55176236A priority Critical patent/JPS5799769A/ja
Publication of JPS5799769A publication Critical patent/JPS5799769A/ja
Publication of JPS637470B2 publication Critical patent/JPS637470B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
JP55176236A 1980-12-13 1980-12-13 Composite transistor Granted JPS5799769A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55176236A JPS5799769A (en) 1980-12-13 1980-12-13 Composite transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55176236A JPS5799769A (en) 1980-12-13 1980-12-13 Composite transistor

Publications (2)

Publication Number Publication Date
JPS5799769A true JPS5799769A (en) 1982-06-21
JPS637470B2 JPS637470B2 (enExample) 1988-02-17

Family

ID=16010011

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55176236A Granted JPS5799769A (en) 1980-12-13 1980-12-13 Composite transistor

Country Status (1)

Country Link
JP (1) JPS5799769A (enExample)

Also Published As

Publication number Publication date
JPS637470B2 (enExample) 1988-02-17

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