JPS5799757A - Flat type semiconductor element - Google Patents

Flat type semiconductor element

Info

Publication number
JPS5799757A
JPS5799757A JP55175290A JP17529080A JPS5799757A JP S5799757 A JPS5799757 A JP S5799757A JP 55175290 A JP55175290 A JP 55175290A JP 17529080 A JP17529080 A JP 17529080A JP S5799757 A JPS5799757 A JP S5799757A
Authority
JP
Japan
Prior art keywords
plate
flat type
semiconductor element
semiconductor
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55175290A
Other languages
Japanese (ja)
Inventor
Yukio Igarashi
Hiroshi Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55175290A priority Critical patent/JPS5799757A/en
Publication of JPS5799757A publication Critical patent/JPS5799757A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/04Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

PURPOSE:To cool the semiconductor element with high efficiency only at the one side by fast sticking a metallic foil having excellent heat conduction onto a surface having smaller thermal resistance of a semiconductor plate and projecting a lower surface of the semiconductor plate to a section lower than a lower end of a side surface of an airtight vessel. CONSTITUTION:A Mo plate 22 is attached on the back of the Si plate 21 and mechanical strength is improved, and a temperature is compensated. A copper block 24 is mounted onto an upper surface of the element 23, and arranged into the cylindrical ceramic 25. The copper foil 26 is fitted to the bottom of the cylinder 25 and used an an electrode, and the bottom 27 of the element 23 is projected more than the lower end 28 of the side surface of the vessel. Accordingly, the copper block is unnecessitated at the lower end. According to this constitution, the flat type element having small thermal resistance is obtained.
JP55175290A 1980-12-12 1980-12-12 Flat type semiconductor element Pending JPS5799757A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55175290A JPS5799757A (en) 1980-12-12 1980-12-12 Flat type semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55175290A JPS5799757A (en) 1980-12-12 1980-12-12 Flat type semiconductor element

Publications (1)

Publication Number Publication Date
JPS5799757A true JPS5799757A (en) 1982-06-21

Family

ID=15993523

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55175290A Pending JPS5799757A (en) 1980-12-12 1980-12-12 Flat type semiconductor element

Country Status (1)

Country Link
JP (1) JPS5799757A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4965658A (en) * 1988-12-29 1990-10-23 York International Corporation System for mounting and cooling power semiconductor devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4965658A (en) * 1988-12-29 1990-10-23 York International Corporation System for mounting and cooling power semiconductor devices

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