JPS5798845A - Diffraction greating for x ray and manufacture thereof - Google Patents
Diffraction greating for x ray and manufacture thereofInfo
- Publication number
- JPS5798845A JPS5798845A JP55174673A JP17467380A JPS5798845A JP S5798845 A JPS5798845 A JP S5798845A JP 55174673 A JP55174673 A JP 55174673A JP 17467380 A JP17467380 A JP 17467380A JP S5798845 A JPS5798845 A JP S5798845A
- Authority
- JP
- Japan
- Prior art keywords
- regions
- crystal
- region
- group
- laminated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K2201/00—Arrangements for handling radiation or particles
- G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
- G21K2201/067—Construction details
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
PURPOSE:To obtain the X ray diffraction grating suitable for lenses and the like as a functional element of an X ray microscope and the like by combining two regions in alternate layers wherein specified two crystal regions are sequentially and repeatedly laminated so that the etching is more intensely performed in either of the crystal regions. CONSTITUTION:The laminated layers 1 comprises the alternate layers of two element crysal regions 2 and three or four element crystal regions 3. The regions 2 comprise a group III element and a group V element in the periodic table, e.g., GaAs. The region 3 comprises one or two of either group III elements or the group V elements, e.g., three element crystal of Ga1-xAlxAs (where X is about 0.7). Each region is formed by controlling both period and composition by changing the molecule beams flying from several evaporating sources to the laminated body in such a way that a shutter is periodically opened and closed by the molecule beam epitaxial method. Then most of GaAs crystal region 2 on said laminated body are etched, with linking regions 2' being left on one side, and the Ga1-xAlxAs crystal regions 3 are protruded in a comb shape.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55174673A JPS5798845A (en) | 1980-12-12 | 1980-12-12 | Diffraction greating for x ray and manufacture thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55174673A JPS5798845A (en) | 1980-12-12 | 1980-12-12 | Diffraction greating for x ray and manufacture thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5798845A true JPS5798845A (en) | 1982-06-19 |
Family
ID=15982687
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55174673A Pending JPS5798845A (en) | 1980-12-12 | 1980-12-12 | Diffraction greating for x ray and manufacture thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5798845A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0206288A2 (en) * | 1985-06-28 | 1986-12-30 | Hitachi, Ltd. | Diffraction grating and process for producing the same |
JPH01213599A (en) * | 1988-02-23 | 1989-08-28 | Nippon Telegr & Teleph Corp <Ntt> | Reflection type diffraction grating |
-
1980
- 1980-12-12 JP JP55174673A patent/JPS5798845A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0206288A2 (en) * | 1985-06-28 | 1986-12-30 | Hitachi, Ltd. | Diffraction grating and process for producing the same |
JPH01213599A (en) * | 1988-02-23 | 1989-08-28 | Nippon Telegr & Teleph Corp <Ntt> | Reflection type diffraction grating |
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