JPS55132036A - Adding method for impurity to semiconductor - Google Patents

Adding method for impurity to semiconductor

Info

Publication number
JPS55132036A
JPS55132036A JP3830679A JP3830679A JPS55132036A JP S55132036 A JPS55132036 A JP S55132036A JP 3830679 A JP3830679 A JP 3830679A JP 3830679 A JP3830679 A JP 3830679A JP S55132036 A JPS55132036 A JP S55132036A
Authority
JP
Japan
Prior art keywords
impurity
thin film
depth
semiconductor
irradiated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3830679A
Other languages
Japanese (ja)
Inventor
Masashi Yamaguchi
Hideo Sugiura
Zeio Kamimura
Kazutoshi Nagai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP3830679A priority Critical patent/JPS55132036A/en
Publication of JPS55132036A publication Critical patent/JPS55132036A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2258—Diffusion into or out of AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To obtain easily such as impurity distribution as is sharply changing in the depth direction by a method wherein a thin film containing a dope element is provided on the surface of a semiconductor substrate, and a laser beam having a wave length and an energy density determined according to the impurity density and depth to obtain is irradiated thereto. CONSTITUTION:A thin film 2 containing elements to dops like Zn, Cd, Si, Ge, Se, Te, Al, In, As2Se3, etc. is fixed on the surface of a semiconductor substrate 1 like GaAs, InP, ZnSe. Next, a laser beam 3 having a wave length and an energy density determined according to the impurity density and depth to form is irradiated thereto, and the surfaces of the layer 2 and the substrate 1 are fused to a liquid phase 4. Then, the irradiation of the beam 3 is stopped, the liquid phase 4 is hardened, and thus a semiconductor surface layer 5 with a constituent atom of the thin film 2 added is obtained. According to this constitution, impurities can be added selectively at a short time, and an impurity distribution shaply changing in the depth direction is easily obtainable.
JP3830679A 1979-04-02 1979-04-02 Adding method for impurity to semiconductor Pending JPS55132036A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3830679A JPS55132036A (en) 1979-04-02 1979-04-02 Adding method for impurity to semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3830679A JPS55132036A (en) 1979-04-02 1979-04-02 Adding method for impurity to semiconductor

Publications (1)

Publication Number Publication Date
JPS55132036A true JPS55132036A (en) 1980-10-14

Family

ID=12521607

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3830679A Pending JPS55132036A (en) 1979-04-02 1979-04-02 Adding method for impurity to semiconductor

Country Status (1)

Country Link
JP (1) JPS55132036A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2555811A1 (en) * 1983-11-30 1985-05-31 Radiotechnique Compelec METHOD FOR PRODUCING LIGHT-EMITTING DIODES WITH LOW SPECTRAL WIDTH, AND DIODES OBTAINED THEREBY
JPS6377113A (en) * 1986-09-20 1988-04-07 Fujitsu Ltd Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2555811A1 (en) * 1983-11-30 1985-05-31 Radiotechnique Compelec METHOD FOR PRODUCING LIGHT-EMITTING DIODES WITH LOW SPECTRAL WIDTH, AND DIODES OBTAINED THEREBY
JPS6377113A (en) * 1986-09-20 1988-04-07 Fujitsu Ltd Manufacture of semiconductor device

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