JPS5796547A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5796547A
JPS5796547A JP17290780A JP17290780A JPS5796547A JP S5796547 A JPS5796547 A JP S5796547A JP 17290780 A JP17290780 A JP 17290780A JP 17290780 A JP17290780 A JP 17290780A JP S5796547 A JPS5796547 A JP S5796547A
Authority
JP
Japan
Prior art keywords
aperture
oxide film
thermal processing
step angle
photoresist layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17290780A
Other languages
Japanese (ja)
Inventor
Kazuhiko Hashimoto
Shigeru Morita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP17290780A priority Critical patent/JPS5796547A/en
Publication of JPS5796547A publication Critical patent/JPS5796547A/en
Pending legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To form an aperture which has an arbitrary step angle by a method wherein an Si oxide film is irradiated selectively by plasma and after thermal processing the Si oxide is partially removed. CONSTITUTION:A photoresist layer which has a specified aperture is formed on an Si oxide film 2 formed on a P type Si substrate 1. The Si oxide film is irradiated by CF4 gas plasma for 5min using the photoresist layer as a mask and, after thermal processing in N2 at 200-500 deg.C for 30min, is etched by NH4F solution, so that an aperture with a step angle theta is formed. With the above method a very stable step angle can be obtained and, according to conditions such as of thermal processing, a required angle can be specified.
JP17290780A 1980-12-08 1980-12-08 Manufacture of semiconductor device Pending JPS5796547A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17290780A JPS5796547A (en) 1980-12-08 1980-12-08 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17290780A JPS5796547A (en) 1980-12-08 1980-12-08 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5796547A true JPS5796547A (en) 1982-06-15

Family

ID=15950547

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17290780A Pending JPS5796547A (en) 1980-12-08 1980-12-08 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5796547A (en)

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