JPS5793589A - Gap light emitting diode - Google Patents

Gap light emitting diode

Info

Publication number
JPS5793589A
JPS5793589A JP17014180A JP17014180A JPS5793589A JP S5793589 A JPS5793589 A JP S5793589A JP 17014180 A JP17014180 A JP 17014180A JP 17014180 A JP17014180 A JP 17014180A JP S5793589 A JPS5793589 A JP S5793589A
Authority
JP
Japan
Prior art keywords
type region
layer
density
light emitting
emitting diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17014180A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6244835B2 (cs
Inventor
Junichi Nishizawa
Ken Sudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP17014180A priority Critical patent/JPS5793589A/ja
Publication of JPS5793589A publication Critical patent/JPS5793589A/ja
Publication of JPS6244835B2 publication Critical patent/JPS6244835B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping

Landscapes

  • Led Devices (AREA)
JP17014180A 1980-12-02 1980-12-02 Gap light emitting diode Granted JPS5793589A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17014180A JPS5793589A (en) 1980-12-02 1980-12-02 Gap light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17014180A JPS5793589A (en) 1980-12-02 1980-12-02 Gap light emitting diode

Publications (2)

Publication Number Publication Date
JPS5793589A true JPS5793589A (en) 1982-06-10
JPS6244835B2 JPS6244835B2 (cs) 1987-09-22

Family

ID=15899420

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17014180A Granted JPS5793589A (en) 1980-12-02 1980-12-02 Gap light emitting diode

Country Status (1)

Country Link
JP (1) JPS5793589A (cs)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS599565U (ja) * 1982-07-08 1984-01-21 三洋電機株式会社 ガリウム燐発光ダイオ−ド
EP0631330A3 (en) * 1993-05-31 1995-03-22 Shinetsu Handotai Kk GaP substrate of a purely green light-emitting device.
US6479312B1 (en) 1999-10-29 2002-11-12 Shin-Etsu Handotai Co., Ltd. Gallium phosphide luminescent device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS599565U (ja) * 1982-07-08 1984-01-21 三洋電機株式会社 ガリウム燐発光ダイオ−ド
EP0631330A3 (en) * 1993-05-31 1995-03-22 Shinetsu Handotai Kk GaP substrate of a purely green light-emitting device.
US6479312B1 (en) 1999-10-29 2002-11-12 Shin-Etsu Handotai Co., Ltd. Gallium phosphide luminescent device

Also Published As

Publication number Publication date
JPS6244835B2 (cs) 1987-09-22

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