JPS5793584A - Semiconductor photoreceiving element - Google Patents

Semiconductor photoreceiving element

Info

Publication number
JPS5793584A
JPS5793584A JP55169888A JP16988880A JPS5793584A JP S5793584 A JPS5793584 A JP S5793584A JP 55169888 A JP55169888 A JP 55169888A JP 16988880 A JP16988880 A JP 16988880A JP S5793584 A JPS5793584 A JP S5793584A
Authority
JP
Japan
Prior art keywords
layer
photodetector
type impurity
guard ring
conductive type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55169888A
Other languages
English (en)
Other versions
JPS6222546B2 (ja
Inventor
Takao Kaneda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55169888A priority Critical patent/JPS5793584A/ja
Publication of JPS5793584A publication Critical patent/JPS5793584A/ja
Publication of JPS6222546B2 publication Critical patent/JPS6222546B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
JP55169888A 1980-12-02 1980-12-02 Semiconductor photoreceiving element Granted JPS5793584A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55169888A JPS5793584A (en) 1980-12-02 1980-12-02 Semiconductor photoreceiving element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55169888A JPS5793584A (en) 1980-12-02 1980-12-02 Semiconductor photoreceiving element

Publications (2)

Publication Number Publication Date
JPS5793584A true JPS5793584A (en) 1982-06-10
JPS6222546B2 JPS6222546B2 (ja) 1987-05-19

Family

ID=15894811

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55169888A Granted JPS5793584A (en) 1980-12-02 1980-12-02 Semiconductor photoreceiving element

Country Status (1)

Country Link
JP (1) JPS5793584A (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4974061A (en) * 1987-08-19 1990-11-27 Nec Corporation Planar type heterostructure avalanche photodiode
US4999696A (en) * 1985-05-03 1991-03-12 U.S. Philips Corporation PIN photodiode having a low leakage current
US5272364A (en) * 1991-07-01 1993-12-21 Mitsubishi Denki Kabushiki Kaisha Semiconductor photodetector device with short lifetime region
JP2006216976A (ja) * 2006-03-13 2006-08-17 Mitsubishi Electric Corp 半導体受光素子
JP2006339413A (ja) * 2005-06-02 2006-12-14 Fujitsu Ltd 半導体受光装置及びその製造方法
US8134179B2 (en) 2005-06-14 2012-03-13 Austriamicrosystems Ag Photodiode with a reduced dark current and method for the production thereof

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0230049U (ja) * 1988-08-16 1990-02-26
GB2597272A (en) * 2020-07-17 2022-01-26 Cyqiq Ltd Electrode harness for use in carrying out electrical impedance tomography, a system and a method

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4999696A (en) * 1985-05-03 1991-03-12 U.S. Philips Corporation PIN photodiode having a low leakage current
US4974061A (en) * 1987-08-19 1990-11-27 Nec Corporation Planar type heterostructure avalanche photodiode
US5272364A (en) * 1991-07-01 1993-12-21 Mitsubishi Denki Kabushiki Kaisha Semiconductor photodetector device with short lifetime region
JP2006339413A (ja) * 2005-06-02 2006-12-14 Fujitsu Ltd 半導体受光装置及びその製造方法
US7875946B2 (en) 2005-06-02 2011-01-25 Fujitsu Limited Semiconductor photodetector that causes avalanche multiplication to occur only at photodetector portion located at central portion of mesa structure
US8772896B2 (en) 2005-06-02 2014-07-08 Fujitsu Limited Semiconductor photodetector that causes avalanche multiplication to occur only at photodetector portion located at central portion of mesa structure
US9276162B2 (en) 2005-06-02 2016-03-01 Fujitsu Limited Semiconductor photodetector and method for manufacturing the same
US8134179B2 (en) 2005-06-14 2012-03-13 Austriamicrosystems Ag Photodiode with a reduced dark current and method for the production thereof
JP2006216976A (ja) * 2006-03-13 2006-08-17 Mitsubishi Electric Corp 半導体受光素子
JP4486603B2 (ja) * 2006-03-13 2010-06-23 三菱電機株式会社 半導体受光素子

Also Published As

Publication number Publication date
JPS6222546B2 (ja) 1987-05-19

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