JPS5792870A - Semiconductor strain gauge - Google Patents

Semiconductor strain gauge

Info

Publication number
JPS5792870A
JPS5792870A JP16807880A JP16807880A JPS5792870A JP S5792870 A JPS5792870 A JP S5792870A JP 16807880 A JP16807880 A JP 16807880A JP 16807880 A JP16807880 A JP 16807880A JP S5792870 A JPS5792870 A JP S5792870A
Authority
JP
Japan
Prior art keywords
voltage
substrate
yield
inversion
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16807880A
Other languages
Japanese (ja)
Inventor
Kazuji Yamada
Motohisa Nishihara
Ryosaku Kanzawa
Hitoshi Minorikawa
Tatsu Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP16807880A priority Critical patent/JPS5792870A/en
Publication of JPS5792870A publication Critical patent/JPS5792870A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
  • Pressure Sensors (AREA)

Abstract

PURPOSE:To improve the dielectric strength characteristic by a method wherein a specific resistivity of an n type substrate is regulated, so that an inversion voltage between two p type diffused resistance layers is made equal to a yield voltage of a p-n junction between the resistance layer and the substrate. CONSTITUTION:A voltage E1 is applied to p type resistance layers 7-5 of an n type substrate 2. If E1 is increased gradually, the voltage reaches the yield point finally. The lower the density of the substrate, the higher the yield voltage. On the other hand, a continuous electron layer is finally formed between electrode 12-13 by increasing of the voltage E1, so that an inversion layer in which positive holes 20 exist continuously is formed on the substrate 2 with an oxide film in between and a large leakage current is generated. In this case, contrary to the yield voltage, the lower the density of the substrate, the lower the inversion voltage. And the density of the substrate is inversely proportional to a specific resistivity of the substrate. Then if the specific resitivity of the substrate is specified in such a manner that the inversion voltage between the respective diffused resistance layers and the yield voltage of a p-n junction between the resistance layer and the substrate are made approximately equal, the inversion voltage and the yield voltage are balanced and the dielectric strength characteristic is in the optimum condition, so that it is improved significantly.
JP16807880A 1980-12-01 1980-12-01 Semiconductor strain gauge Pending JPS5792870A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16807880A JPS5792870A (en) 1980-12-01 1980-12-01 Semiconductor strain gauge

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16807880A JPS5792870A (en) 1980-12-01 1980-12-01 Semiconductor strain gauge

Publications (1)

Publication Number Publication Date
JPS5792870A true JPS5792870A (en) 1982-06-09

Family

ID=15861429

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16807880A Pending JPS5792870A (en) 1980-12-01 1980-12-01 Semiconductor strain gauge

Country Status (1)

Country Link
JP (1) JPS5792870A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022072428A1 (en) * 2020-09-29 2022-04-07 Sensata Technologies Inc. Junction-isolated semiconductor strain gauge

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022072428A1 (en) * 2020-09-29 2022-04-07 Sensata Technologies Inc. Junction-isolated semiconductor strain gauge

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