JPS5792862A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5792862A JPS5792862A JP17065780A JP17065780A JPS5792862A JP S5792862 A JPS5792862 A JP S5792862A JP 17065780 A JP17065780 A JP 17065780A JP 17065780 A JP17065780 A JP 17065780A JP S5792862 A JPS5792862 A JP S5792862A
- Authority
- JP
- Japan
- Prior art keywords
- emitter
- base
- field plate
- hole
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 238000005530 etching Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To improve dielectric strength without increasing the number of process, by thinning an oxide film under a field plate at the same time when the oxide film is opened by etching. CONSTITUTION:An SiO2 film 2 is provided on an N type Si-substrate. The SiO2 film increases gradually in its thickness, as a base 3 and an emitter 4 are subsequently diffused. First, each junction hole of the emitter and the base is etched. An emitter junction hole 5 is covered with resist, after stopping etching at the completion of the hole 5, and a base junction hole 6 is made. When the hole 5 is opened, a field 7 forming a field plate is etched at the same time, and the SiO2 film is reduced in its thickness. It is reduced to the same thickness for the emitter and the base, then, electrodes 8, 9, and a field plate 10 are attached thereupon. This constitution produces the high dielectric strength by the field plate of a planer transistor very effectively without increasing the number of processes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17065780A JPS5792862A (en) | 1980-12-01 | 1980-12-01 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17065780A JPS5792862A (en) | 1980-12-01 | 1980-12-01 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5792862A true JPS5792862A (en) | 1982-06-09 |
Family
ID=15908939
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17065780A Pending JPS5792862A (en) | 1980-12-01 | 1980-12-01 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5792862A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103022096A (en) * | 2012-12-27 | 2013-04-03 | 上海集成电路研发中心有限公司 | Terminal structure of high-voltage semiconductor device and method for manufacturing terminal structure |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4940062A (en) * | 1972-07-13 | 1974-04-15 | Intersil Inc | |
| JPS51144184A (en) * | 1975-06-05 | 1976-12-10 | Mitsubishi Electric Corp | Production method of semiconductor unit |
| JPS5578532A (en) * | 1978-12-07 | 1980-06-13 | Matsushita Electronics Corp | Formation of electrode for semiconductor device |
-
1980
- 1980-12-01 JP JP17065780A patent/JPS5792862A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4940062A (en) * | 1972-07-13 | 1974-04-15 | Intersil Inc | |
| JPS51144184A (en) * | 1975-06-05 | 1976-12-10 | Mitsubishi Electric Corp | Production method of semiconductor unit |
| JPS5578532A (en) * | 1978-12-07 | 1980-06-13 | Matsushita Electronics Corp | Formation of electrode for semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103022096A (en) * | 2012-12-27 | 2013-04-03 | 上海集成电路研发中心有限公司 | Terminal structure of high-voltage semiconductor device and method for manufacturing terminal structure |
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