JPS5791517A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5791517A JPS5791517A JP16679580A JP16679580A JPS5791517A JP S5791517 A JPS5791517 A JP S5791517A JP 16679580 A JP16679580 A JP 16679580A JP 16679580 A JP16679580 A JP 16679580A JP S5791517 A JPS5791517 A JP S5791517A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- oxygen
- nuclide
- laser light
- film layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16679580A JPS5791517A (en) | 1980-11-28 | 1980-11-28 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16679580A JPS5791517A (en) | 1980-11-28 | 1980-11-28 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5791517A true JPS5791517A (en) | 1982-06-07 |
Family
ID=15837811
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16679580A Pending JPS5791517A (en) | 1980-11-28 | 1980-11-28 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5791517A (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62209862A (ja) * | 1986-03-10 | 1987-09-16 | Matsushita Electric Ind Co Ltd | 薄膜半導体デバイス |
JPS62290128A (ja) * | 1986-06-10 | 1987-12-17 | Toshiba Corp | 半導体装置の製造方法 |
JPH06333950A (ja) * | 1994-01-27 | 1994-12-02 | Semiconductor Energy Lab Co Ltd | 絶縁ゲート型電界効果半導体装置作製方法 |
JPH0799208A (ja) * | 1994-06-10 | 1995-04-11 | Semiconductor Energy Lab Co Ltd | 液晶表示パネル用絶縁ゲート型電界効果半導体装置の作製方法 |
JPH0799316A (ja) * | 1994-06-10 | 1995-04-11 | Semiconductor Energy Lab Co Ltd | 絶縁ゲート型電界効果半導体装置 |
JPH07183523A (ja) * | 1994-11-25 | 1995-07-21 | Semiconductor Energy Lab Co Ltd | 絶縁ゲート型電界効果半導体装置の作製方法 |
US7247812B2 (en) * | 2002-11-22 | 2007-07-24 | Au Optronics Corporation | Laser annealing apparatus |
-
1980
- 1980-11-28 JP JP16679580A patent/JPS5791517A/ja active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62209862A (ja) * | 1986-03-10 | 1987-09-16 | Matsushita Electric Ind Co Ltd | 薄膜半導体デバイス |
JPS62290128A (ja) * | 1986-06-10 | 1987-12-17 | Toshiba Corp | 半導体装置の製造方法 |
JPH06333950A (ja) * | 1994-01-27 | 1994-12-02 | Semiconductor Energy Lab Co Ltd | 絶縁ゲート型電界効果半導体装置作製方法 |
JPH0799208A (ja) * | 1994-06-10 | 1995-04-11 | Semiconductor Energy Lab Co Ltd | 液晶表示パネル用絶縁ゲート型電界効果半導体装置の作製方法 |
JPH0799316A (ja) * | 1994-06-10 | 1995-04-11 | Semiconductor Energy Lab Co Ltd | 絶縁ゲート型電界効果半導体装置 |
JPH07183523A (ja) * | 1994-11-25 | 1995-07-21 | Semiconductor Energy Lab Co Ltd | 絶縁ゲート型電界効果半導体装置の作製方法 |
US7247812B2 (en) * | 2002-11-22 | 2007-07-24 | Au Optronics Corporation | Laser annealing apparatus |
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