JPS5788763A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5788763A JPS5788763A JP55163298A JP16329880A JPS5788763A JP S5788763 A JPS5788763 A JP S5788763A JP 55163298 A JP55163298 A JP 55163298A JP 16329880 A JP16329880 A JP 16329880A JP S5788763 A JPS5788763 A JP S5788763A
- Authority
- JP
- Japan
- Prior art keywords
- hole
- layer
- diffusion layer
- conductor layer
- breakdown
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000009792 diffusion process Methods 0.000 abstract 6
- 239000004020 conductor Substances 0.000 abstract 4
- 230000015556 catabolic process Effects 0.000 abstract 3
- 230000002159 abnormal effect Effects 0.000 abstract 2
- 239000012212 insulator Substances 0.000 abstract 2
- 230000005684 electric field Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55163298A JPS5788763A (en) | 1980-11-21 | 1980-11-21 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55163298A JPS5788763A (en) | 1980-11-21 | 1980-11-21 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5788763A true JPS5788763A (en) | 1982-06-02 |
Family
ID=15771162
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55163298A Pending JPS5788763A (en) | 1980-11-21 | 1980-11-21 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5788763A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6812568B2 (en) | 2001-07-30 | 2004-11-02 | Mitsubishi Denki Kabushiki Kaisha | Electrode structure, and method for manufacturing thin-film structure |
-
1980
- 1980-11-21 JP JP55163298A patent/JPS5788763A/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6812568B2 (en) | 2001-07-30 | 2004-11-02 | Mitsubishi Denki Kabushiki Kaisha | Electrode structure, and method for manufacturing thin-film structure |
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