JPS5779618A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5779618A JPS5779618A JP15467480A JP15467480A JPS5779618A JP S5779618 A JPS5779618 A JP S5779618A JP 15467480 A JP15467480 A JP 15467480A JP 15467480 A JP15467480 A JP 15467480A JP S5779618 A JPS5779618 A JP S5779618A
- Authority
- JP
- Japan
- Prior art keywords
- glass
- wafer
- nickel
- electrode
- resist ink
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000011521 glass Substances 0.000 abstract 5
- 238000000034 method Methods 0.000 abstract 4
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 abstract 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- 239000003814 drug Substances 0.000 abstract 2
- 239000007788 liquid Substances 0.000 abstract 2
- 238000007747 plating Methods 0.000 abstract 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 abstract 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 abstract 1
- 235000019270 ammonium chloride Nutrition 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- LONQOCRNVIZRSA-UHFFFAOYSA-L nickel(2+);sulfite Chemical compound [Ni+2].[O-]S([O-])=O LONQOCRNVIZRSA-UHFFFAOYSA-L 0.000 abstract 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 abstract 1
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 abstract 1
- 239000001509 sodium citrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To prevent a glass from being corroded during a plating process, by a method wherein, in case an electrode is formed by a plating method on a semiconductor device with a recess having an exposed junction and being coated with glass, the glass is previously protected with a medicine resistant ink. CONSTITUTION:A wafer 1, wherein a recess is covered with a glass 2, is prepared, and a medicine-resistant resist ink 4 is screen-printed on a region, except a part where an electrode is formed, of the wafer 1. An oxidized film 3 is etched with a mixture liquid of hydrofluoric acid and ammonium fluoride through the mask of the resist ink 4. The wafer 1, continuously, is placed in a nickel plated liquid in pH8 and at 80 deg.C, consisting of nickel sulphite hydrophosphorous acid soda, sodium citrate, and ammonium chloride, to form a nickel-plated layer 5. Finally, the resist ink 4 is removed to complete an electrode forming process. This enables the mass production of plated electrodes without the damage of the glass.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15467480A JPS5779618A (en) | 1980-11-05 | 1980-11-05 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15467480A JPS5779618A (en) | 1980-11-05 | 1980-11-05 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5779618A true JPS5779618A (en) | 1982-05-18 |
Family
ID=15589418
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15467480A Pending JPS5779618A (en) | 1980-11-05 | 1980-11-05 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5779618A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009021713A1 (en) * | 2007-08-16 | 2009-02-19 | Deutsche Cell Gmbh | Method for producing a semiconductor component, a semiconductor component, and an intermediate product in the production thereof |
-
1980
- 1980-11-05 JP JP15467480A patent/JPS5779618A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009021713A1 (en) * | 2007-08-16 | 2009-02-19 | Deutsche Cell Gmbh | Method for producing a semiconductor component, a semiconductor component, and an intermediate product in the production thereof |
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