JPS5777092A - Manufacture of oxide single crystal with high melting point - Google Patents
Manufacture of oxide single crystal with high melting pointInfo
- Publication number
- JPS5777092A JPS5777092A JP15348480A JP15348480A JPS5777092A JP S5777092 A JPS5777092 A JP S5777092A JP 15348480 A JP15348480 A JP 15348480A JP 15348480 A JP15348480 A JP 15348480A JP S5777092 A JPS5777092 A JP S5777092A
- Authority
- JP
- Japan
- Prior art keywords
- starting material
- single crystal
- oxide
- vacuum
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To obtain a colorless, transparet and uniform crystal efficiently and inexpensively by using a high density molded body sintered in a hydrogen atmosphere or in a vacuum as starting material when an oxide singla crystal with a high m.p. is manufactured by the Bagdasarov's method.
CONSTITUTION: Oxide as starting material is put in a heat resistant metallic container and melted by heating in a vacuum or an inert atmosphere. The melt is cooled from one end by moving in the horizontal direction to cause single crystalization. Thus, an oxide single crystal with a high m.p such as sapphire or ruby is manufactured. At this time, a high density moded body sintered in a hydrogen atmosphere or a vacuum is used as the starting material. Since gas reacting with the metallic container is not contained in the sintered body as the starting material, the resulting single crystal is free from bubbles and foreign matter in the interior and on the surface. The suitable starting material is alumina or a mixture of alumina with magnesia.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15348480A JPS5777092A (en) | 1980-10-31 | 1980-10-31 | Manufacture of oxide single crystal with high melting point |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15348480A JPS5777092A (en) | 1980-10-31 | 1980-10-31 | Manufacture of oxide single crystal with high melting point |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5777092A true JPS5777092A (en) | 1982-05-14 |
| JPS6129913B2 JPS6129913B2 (en) | 1986-07-10 |
Family
ID=15563575
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15348480A Granted JPS5777092A (en) | 1980-10-31 | 1980-10-31 | Manufacture of oxide single crystal with high melting point |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5777092A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5540182A (en) * | 1993-09-24 | 1996-07-30 | General Electric Company | Conversion of polycrystalline material to single crystal material using bodies having a selected surface topography |
| JP2007145611A (en) * | 2005-11-24 | 2007-06-14 | National Institute Of Advanced Industrial & Technology | Method for producing sapphire single crystal and producing device therefor |
-
1980
- 1980-10-31 JP JP15348480A patent/JPS5777092A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5540182A (en) * | 1993-09-24 | 1996-07-30 | General Electric Company | Conversion of polycrystalline material to single crystal material using bodies having a selected surface topography |
| JP2007145611A (en) * | 2005-11-24 | 2007-06-14 | National Institute Of Advanced Industrial & Technology | Method for producing sapphire single crystal and producing device therefor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6129913B2 (en) | 1986-07-10 |
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