JPS5776830A - Semiconductor substrate - Google Patents
Semiconductor substrateInfo
- Publication number
- JPS5776830A JPS5776830A JP55153128A JP15312880A JPS5776830A JP S5776830 A JPS5776830 A JP S5776830A JP 55153128 A JP55153128 A JP 55153128A JP 15312880 A JP15312880 A JP 15312880A JP S5776830 A JPS5776830 A JP S5776830A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- oxide film
- silicon oxide
- substrate
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H10P34/42—
Landscapes
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55153128A JPS5776830A (en) | 1980-10-31 | 1980-10-31 | Semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55153128A JPS5776830A (en) | 1980-10-31 | 1980-10-31 | Semiconductor substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5776830A true JPS5776830A (en) | 1982-05-14 |
Family
ID=15555589
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55153128A Pending JPS5776830A (en) | 1980-10-31 | 1980-10-31 | Semiconductor substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5776830A (ja) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6012722A (ja) * | 1983-07-01 | 1985-01-23 | Agency Of Ind Science & Technol | 薄膜結晶形成法 |
| US5079183A (en) * | 1983-07-15 | 1992-01-07 | Kabushiki Kaisha Toshiba | C-mos device and a process for manufacturing the same |
| US5549747A (en) * | 1980-04-10 | 1996-08-27 | Massachusetts Institute Of Technology | Method of producing sheets of crystalline material and devices made therefrom |
-
1980
- 1980-10-31 JP JP55153128A patent/JPS5776830A/ja active Pending
Non-Patent Citations (1)
| Title |
|---|
| JAPAN.J.APPL PHYS=1980 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5549747A (en) * | 1980-04-10 | 1996-08-27 | Massachusetts Institute Of Technology | Method of producing sheets of crystalline material and devices made therefrom |
| JPS6012722A (ja) * | 1983-07-01 | 1985-01-23 | Agency Of Ind Science & Technol | 薄膜結晶形成法 |
| US5079183A (en) * | 1983-07-15 | 1992-01-07 | Kabushiki Kaisha Toshiba | C-mos device and a process for manufacturing the same |
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